WPM3028 WPM3028. Descriptions. Features. Applications. Order information. Typical R DS(on) (mω) V GS =-10V V GS =-5V -30

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1 WPM32 WPM32 Single P-Channel, -3V, -11.5A, Power MOSFET V DS (V) Typical R DS(on) (mω) -3 11@ =-1V =-5V S S S G Descriptions The WPM32 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM32 is Pb-free. Top View D Bottom View DFN3x3-L D D D Features S S S G Pin configuration (Top view) Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package DFN3x3-L Applications DC/DC converters Power supply converters circuit Load/Power Switching for portable device 32 = Device Code PS = Special Code Y = Year W = Week(A~z) Marking Order information Device Package Shipping WPM32-/TR DFN3x3-L 3/Tape&Reel Will Semiconductor Ltd /6/2- Rev.1.

2 Absolute Maximum ratings WPM32 Parameter Symbol 1 s Steady State Unit Drain-Source Voltage V DS -3 V Gate-Source Voltage ±25 Continuous Drain Current a d Maximum Power Dissipation a d Continuous Drain Current b d Maximum Power Dissipation b d T A =25 C T A =7 C T A =25 C P D T A =7 C T A =25 C T A =7 C T A =25 C P D T A =7 C Pulsed Drain Current c M -47 A Operating Junction Temperature T J -55 to 15 C Lead Temperature T L 26 C Storage Temperature Range T stg -55 to 15 C A W A W Thermal resistance ratings Single Operation Parameter Symbol Typical Maximum Unit Junction-to-Ambient Thermal Resistance a t 1 s 3 4 R θja Steady State 6 75 Junction-to-Ambient Thermal Resistance b t 1 s 65 2 C/W R θja Steady State Junction-to-Case Thermal Resistance Steady State R θjc a b c d Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper Surface mounted on FR4 board using minimum pad size, 1oz copper Repetitive rating, pulse width limited by junction temperature, t p =1µs, Duty Cycle=1% Repetitive rating, pulse width limited by junction temperature T J =15 C. Will Semiconductor Ltd /6/2- Rev.1.

3 Electronics Characteristics (Ta=25 o C, unless otherwise noted) WPM32 Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS = V, = -25uA -3 V Zero Gate Voltage Drain Current SS V DS =-24V, = V -1 ua Gate-to-source Leakage Current I GSS V DS = V, = ±25V ±1 na ON CHARACTERISTICS Gate Threshold Voltage (TH) = V DS, = -25uA V Drain-to-source On-resistance R DS(on) = -1V, = -1A mω =-5V, = -7A 15 2 Forward Transconductance g FS V DS = -5 V, = -A 7 16 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C ISS 2 = V, f = 1.MHz, V DS = Output Capacitance C OSS 435 pf -15 V Reverse Transfer Capacitance C RSS 33 Total Gate Charge Q G(TOT) Threshold Gate Charge Q G(TH) = -1 V, V DS = -15 V, 6 Gate-to-Source Charge Q GS =-1 A nc Gate-to-Drain Charge Q GD 7 Gate Resistance R g = V, V DS = V, f=1mhz 1 Ω SWITCHING CHARACTERISTICS Turn-On Delay Time td(on) 19 Rise Time tr = -1 V, V DS =-15 V, 12 Turn-Off Delay Time td(off) =-5A, R G =6Ω 11 ns Fall Time tf 32 BODY DIODE CHARACTERISTICS Forward Voltage V SD = V, I S = -1A V 39 Will Semiconductor Ltd /6/2- Rev.1.

4 C apacitance( pf) Cis 3 6Cos F =1MHZ Crs -VDS-Dra intosourc evoltage( V) s Typical Characteristics (Ta=25 o C, unless otherwise noted) WPM32 -S -Drain to Source Current(A) =-1V =-4.5V =-3.5V V DS -Drain to Source Voltage(V) Output characteristics -S -Drain Source Current(A) V DS =-5V 15 o C 25 o C Gate to Source Voltage(V) Transfer characteristics -5 o C.5.1 =-1A R DS(ON) -On Resistance( ) =-4.5V =-3.5V =-1V R DS(ON) -On-Resistance( ) S -Drain to Source Current(A) On-Resistance vs. Drain current Gate to Source Voltage (V) On-Resistance vs. Gate-to-source voltage RDS (ON) -On-Resistance Normalized =-1V =-1A Temperature ( o C) On-Resistance vs. Junction temperature Gate Threshold Voltage Normalized 1.2 =-25uA Temperature ( o C) Threshold voltage vs. Temperature Will Semiconductor Ltd /6/2- Rev.1.

5 WPM Capacitance (pf) Crss Ciss Coss F = 1MHZ -I SD -Source to Drain Current (A) T=15 o C T=25 o C V DS -Drain to Source Voltage (V) Capacitance V SD -Source to Drain Voltage (V) Body diode forward voltage Power (W) T J(MAX) =15 o C T A =25 o C 1E-4 1E Pulse width (S) Single pulse power - -Drain Current (A) Limit by Rdson T A =25 o C Single Pulse DC 1s V DS -Drain to Source Voltage(V) * >minimum at which R DS(ON) is specified Safe operating power 1us 1ms 1ms 1ms 1s 1 - -Gate to Source Voltage (V) V DS =-15V =-5A Q g (nc) Gate Charge Characteristics Will Semiconductor Ltd /6/2- Rev.1.

6 WPM32 1 Duty Cycle =.5 Normalized Effective Transient Thermal Impedance T JM -T A =P DM Z (t) thja.1 Single Pulse 4. Surface Mounted Square Wave Pulse Duration (s) Notes: P DM t 1 t 2 t 1 1. Duty Cycle, D = t 2 2. Per Unit Base = R thja =75 C / W Transient thermal response (Junction-to-Ambient) Will Semiconductor Ltd /6/2- Rev.1.

7 Package outline dimensions DFN3x3-L WPM32 Symbol Dimensions in Millimeters Min. Typ. Max. A A A3.2 Ref. D E D E b e.65 Typ. L Will Semiconductor Ltd /6/2- Rev.1.

8 TAPE AND REEL INFORMATION WPM32 Reel Dimensions RD Tape Dimensions P1 W Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension W Overall width of the carrier tape 1 7inch 13inch mm 12mm 16mm P1 Pin1 Pitch between successive cavity centers Pin1 Quadrant 2mm 4mm mm Q1 Q2 Q3 Q4 Will Semiconductor Ltd. 217/6/2- Rev.1.