Product Specifications
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1 Produc Specificaio L493T2863-E7S/E6S/S E: 2 General Informaion 1GB 128Mx72 2 SAM ECC EGISTEE SO-IMM 2-PIN escripion: Feaures: The L493T2863 is a 128Mx72 ouble aa ae 2 SAM high deiy SO-IMM. This memory module coiss of nine CMOS 128Mx8 bi wih 8 banks 2 Synchronous AMs in BGA packages, wo 2-bi egisered buffers in BGA package, a zero delay PLL clock in BGA package, and a 2 EEPOM in an 8-pin MLF package. This module is a 2-pin small-ouline regisered dual in-line memory module and is inended for mouning ino a connecor socke. ecoupling capaciors are mouned on he prined circui board for each 2 SAM.. 2-pin, regisered small-ouline dual in-line memory module (SO-IMM. Fas daa rafer raes: PC2-64, PC2-3. Suppors ECC error deecion and correcion. = Q = 8. SP = 7 o 3.6. JEEC sandard 8 I/O (SSTL_18 compaible. ifferenial daa srobe (QS, QS# opion. ifferenial clock inpus (, #. Four-bi pre-fech archiecure. LL alig Q and QS raiion wih. Programmable CAS# laency (CL: 6 (2-8, ( Wrie laency = ead laency - 1. Eigh inernal componen banks for concurren operaion. Programmable burs; lengh (4, 8. Adjusable daa-oupu drive srengh. On-die erminaion (OT. Auo & self refresh, (8/64ms refresh. Serial presence deec (SP wih EEPOM. Gold edge conacs. Lead-free ohs. PCB: Heigh 29.8mm (17", double sided compone. JEEC pin ou A ~ A13 BA ~ BA2 Q ~ Q63 CB ~ CB7 QS ~ QS8 QS# ~ QS8# OT,# E CS# AS# CAS# WE# ESET# M ~ M8 A1/AP Funcion Address Inpu s Bank Address Inpu s aa Inpu/Oupu Check Bis aa Srobes aa Srobes Complemen On-die Terminaion Conrol Clock Inpu Clock Enables Chip Selecs ow Address Srobes Column Address Srobes Wrie Enable egiser ese Inpu aa Masks olage Supply 8 +/-.1 Address Inpu/Auo Precharge Order Informaion: L493T2863-E7 S X AM IE (opion AM MANUFACTUE S - SAMSUNG MOULE SPEE E7: CL6 E6: CL : CL4 L : Lead-free/oHS SP SA ~ SA1 SA SCL EF SP olage Supply 7 o 3.6 Ground SP Address SP aa Inpu/Oupu SP Clock Inpu SSTL_18 eference olage No Connec irium Technology, Inc. 32 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 1 OF 1
2 Produc Specificaio L493T2863-E7S/E6S/S E: 2 Configuraion 2-PIN 2 SO-IMM FONT 2-PIN 2 SO-IMM BA 1 EF 1 Q A Q 3 Q19 13 A 13 QS# 4 Q4 4 Q28 14 A4 14 M 1 A3 1 QS 6 Q 6 Q Q1 7 Q24 17 A A1 18 Q46 9 QS# 9 Q Q42 1 M 6 M3 11 A 16 Q47 11 QS A1/AP 161 Q BA QS3# 113 BA Q6 64 Q Q2 1 Q2 6 QS3 11 AS# 16 Q48 16 Q7 66 Q WE# 166 Q3 17 Q Q CS# Q CAS# Q12 7 CB4 12 OT 17 M6 21 Q8 71 Q QS6# 22 Q13 72 CB 122 A Q QS Q4 2 7 CB M1 76 M Q 27 QS1# 77 CB Q # QS Q Q1 3 Q14 8 CB Q QS8# Q1 82 CB7 132 Q Q61 33 Q1 83 QS8 133 Q Q Q Q QS4# 18 Q7 36 Q2 86 CB M E 137 QS Q21 88 CB3 138 M4 188 Q62 39 Q QS7# Q Q QS7 42 ESET# 92 BA2 142 Q Q Q3 193 Q8 44 M Q SA 4 QS2# 9 A A SCL 47 QS2 97 A9 147 Q4 197 Q9 48 Q Q SA A7 149 Q SP Q23 1 A8 1 Q4 2 SA Noe: ESET (pin 42 ESET is conneced o boh OE of he PLL and ese of he regiser for 72-bi egisered SO-IMM ONLY irium Technology, Inc. 32 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 2 OF 1
3 Produc Specificaio L493T2863-E7S/E6S/S E: 2 Funcional Block iagram CS# QS QS# M QS4 QS4# M4 Q Q1 Q2 Q3 Q4 Q Q6 Q7 I/O CS# QS QS# Q32 Q33 Q34 Q3 Q36 Q37 Q38 Q39 I/O CS# QS QS# 4 QS1 QS1# M1 QS QS# M Q8 Q9 Q1 Q11 Q12 Q13 Q14 Q1 I/O CS# QS QS# 1 Q4 Q41 Q42 Q43 Q44 Q4 Q46 Q47 I/O CS# QS QS# QS2 QS2# M2 QS3 QS3# M3 QS8 QS8# M8 CS# BA-BA2 A-A13 AS# CAS# WE# E OT Q16 Q17 Q18 Q19 Q2 Q21 Q22 Q23 Q24 Q2 Q26 Q27 Q28 Q29 Q3 Q31 CB CB1 CB2 CB3 CB4 CB CB6 CB7 1:1 E G I S T E I/O I/O I/O CS# QS QS# 2 CS# QS QS# 3 CS# QSQS# 8 SCL QS6 QS6# M6 QS7 QS7# M7 WP A CS# -> CS# : 2 SAMs -8 BA-BA2 -> BA-BA2 : 2 SAMs -8 A-A13 -> A-A13 : 2 SAMs -8 AS# -> AS:# 2 SAMs -8 CAS# -> CAS:# 2 SAMs -8 WE# -> WE# : 2 SAMs -8 E -> E : 2 SAMs -8 OT -> OT : 2 SAMs -8 Serial P A1 SA SA1 A2 Q48 Q49 Q Q1 Q2 Q3 Q4 Q Q6 Q7 Q8 Q9 Q6 Q61 Q62 Q63 SA2 SA # I/O I/O SP 6 7 / Q EF SS 12 ** ESET# CS# QS QS# CS# QS QS# PLL Serial P Noes: Unless oherwise noed, resisor values are 22 Ohms % # 2 SAM 2 SAM 2 SAM 2 SAM 2 SAM 2 SAM 2 SAM 2 SAM 2 SAM EGISTE ESET#** ** #** ST# ** ESET#, and # connecs o egiser. irium Technology, Inc. 32 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 3 OF 1
4 Produc Specificaio L493T2863-E7S/E6S/S E: 2 Absolue imum aings Parameer MIN MAX Uni Q L IN, OUT T STG olage on olage on olage on Q L pin relaive o p p in relaive o in relaive o olage on any pin relaive o SS SS. SS. SS Sorage emperaur e - 1 C IL IOZ Inpu leakage curren; Any inpu <IN<; EF inpu <IN<.9; Oher pi no under es = Oupu leakage curren; <OUT<Q; Qs and OT are disabled Command/Address, AS#, CAS#, WE#, E, OT, BA - ua CS#, # -1 1 ua M - ua Q, QS, QS# - ua I EF EF leakage curren; EF = alid EF level ua C Operaing Condiio volages referenced o Parameer Typica l Uni Noes Supply volage I/O Supply volage L Supply volage Q L I/O eference volage EF.49 x Q. x Q.1 x Q 2 I/O Terminaion volage TT EF-.4 EF EF+.4 3 Noes:, Q mus rack each oher. Q mus be less han or equal o. 2. EF is expeced o equal Q/2 of he ramiing device and o rack variaio in he C level of he same. Peak-o- peak noise on EF may no exceed +/-1percen of he C value. Peak-o-peak AC noise on EF may no exceed +/-2 percen of EF. This measuremen is o be aken a he neares EF bypass capacior. 3. TT is no applied direcly o he device. TT is a sysem supply for signal erminaion resisors, is expeced o be se equal o EF and mus rack variaio in he C level of EF. 4. Q racks wih ; L racks wih. irium Technology, Inc. 32 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 4 OF 1
5 Produc Specificaio L493T2863-E7S/E6S/S E: 2 Operaing Temperaure Condiion Parameer aing Unis Noes Operaing emperaure T PE O o 9 C 1, 2 Noes: Operaing emperaure is he case surface emperaure on he cener/op side of he AM. For he measuremen condiio, please refer o JEEC JES2 2. A - 8 C, operaion emperaure range, all AM specificaio will be suppored. The refresh rae is required o double when 8 C < TOPE <= 9 C Inpu C Logic Level volages referenced o Parameer Uni I npu High (Logic 1 olage IH(C EF +.12 Q +.3 I npu Low (Logic olage IL(C -.3 EF -.12 Inpu AC Logic Level volages referenced o Parameer Uni A C Inpu High (Logic 1 olage 2-33 IH(AC EF A C Inpu High (Logic 1 olage & 2-8 IH(AC EF A C Inpu Low (Logic olage 2-33 IL(AC - EF -.2 A C Inpu Low (Logic olage & 2-8 IL(AC - EF -.2 Inpu/Oupu Capaciance TA=2 C, f=1mhz Parameer Uni Inpu capaciance (A~A13, BA~BA2, AS#, CAS#, WE# CIN1-12 pf Inpu capaciance (E, (OT CIN2-12 pf Inpu capaciance (CS# CIN3-12 pf Inpu capaciance (, # CIN4-11 pf Inpu/Oupu capaciance (Q, QS, QS#, M, CB CIO (E7, E pf CIO ( 6. 8 pf irium Technology, Inc. 32 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE OF 1
6 Produc Specificaio L493T2863-E7S/E6S/S E: 2 I Specificaion Condiion O peraing one bank acive-precharge; = ; = ; = E is HIGH, CS# is HIGH beween valid (I C C(I AS AS MIN(I ; commands; Address bus inpus are SWITCHING; aa bus inpus are SWITCHING O peraing one bank acive-read-precharge ; IOUT = ; BL = 4; CL = CL(I; = ; = ; = E is HIGH, (I C C(I AS AS MIN(I ; CS# is HIGH beween valid commands; Address bus inpus are SWITCHING; aa bus inpus are SWITCHING; aa paern is same as I4W. P recharge power-down curren; banks idle; = ; E is LOW; Oher conrol and address bus inpus are STABLE (I aa bus inpus are FLOATING C ; P recharge quie sandby curren; banks idle; = ; E is HIGH; CS# is HIGH; Oher conrol and address bus inpus (I are STABLE; aa bus inpus are FLOATING P recharge sandby curren; banks idle; = ; E is HIGH; CS# is HIGH; Oher conrol and address bus inpus (I are STABLE; aa bus inpus are SWITCHING. -E7 -E6 - Uni I I I2P I2Q I2N A cive power-down curren; banks open; = ; E is LOW; Oher conrol (I and address bus inpus are STABLE; aa bus inpus are FLOATING. Fas PN Exi MS(12 = I3P Slow PN Exi MS(12 = A cive sandby curren; banks open; = ; = ; = ;E is HIGH, CS# is HIGH beween (I C C(I AS AS MIN(I valid commands; Oher conrol and address bus inpus are SWITCHING; aa bus inpus are SWITCHING. O peraing burs wrie curren; banks open; Coninuous burs wries; BL = 4; CL = CL(I; AL = ; = ; C (I = ; = ; E is HIGH, CS# is HIGH beween valid commands; Address AS AS MAX(I P P(I bus inpus are SWITCHING; aa bus inpus are SWITCHING. O peraing burs read curren; banks open; Coninuous burs reads; IOUT = ; BL = 4; CL = CL(I; AL = ; = ; = ; = ; E is HIGH, CS# is HIGH beween valid (I AS AS MAX(I P P(I commands; Address bus inpus are SWITCHING; aa paern is same as I4W. I3N I4W I Burs auo refresh curren; = ; efresh command a every inerval; E is HIGH; CS# is HIGH beween (I FC(I valid commands; Oher conrol and address bus inpus are SWITCHING; aa bus inpus are SWITCHING. I Self refresh curren; C and # a ; E <.2; Oher conrol and address bus inpus are FLOATING; aa bus inpus are FLOATING. Normal I Operaing bank inerleave read curren; A ll bank inerleaving reads; IOUT = ; BL = 4; CL = CL(I; AL = - 1* ; C(I C (I = ; = ; = ; = 1* ; E is HIGH; CS# is HIGH beween (I C C(I (I C (I valid commands; Address bus inpus are STABLE during ESELECTs; aa bus inpus are SWITCHING. I Noe: I specificaion is based on Samsung -die componen. irium Technology, Inc. 32 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 6 OF 1
7 aa Srobe aa Clock PAT NO: Produc Specificaio L493T2863-E7S/E6S/S E: 2 AC Timing Parameers & Specificaio Parameer -E7 -E6 - Uni Clock cycle ime CL=6 CL= CL=4 C 6 ( C ( C 4 ( ,7 8, high-level widh low-level widh CH.4 CL Half clock period P H MIN ( CH, C L MIN ( CH, C L MIN ( CH, C L Clock jier Q oupu access ime from /# JIT 1 AC aa-ou high impedance window from /# aa-ou low-impedance window from /# Q and M inpu seup ime relaive o QS HZ AC (MAX AC (MAX AC (MAX LZ AC (MIN AC (MAX AC (MIN AC (MAX AC (MIN AC (MAX S 1 1 Q and M inpu hold ime relaive o QS H Q and M inpu pulse widh (for each inpu IPW aa hold skew facor HS Q Q QS hold, per access QS o firs Q o go nonvalid, QH HP - QHS HP - QHS HP - QHS aa valid oupu window (W W QH - QSQ QH - QSQ QH - QSQ QS inpu high pulse widh QSH QS inpu low pulse widh QSL QS oupu access ime from/# QS QS falling edge o rising seup ime SS QS falling edge from rising hold ime SH QS Q skew, per access QS o las Q valid, per group, QSQ QS read preamble PE QS read posamble PST QS wrie preamble seup ime WPES QS wrie preamble PE QS wrie posamble PST.3 W. 4 W Wrie command o firs QS laching raiion QSS L-.2 W WL+.2 WL-.2 WL+.2 WL-.2 WL+.2 irium Technology, Inc. 32 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 7 OF 1 C
8 Power-own OT Self efresh Command and Address PAT NO: Produc Specificaio L493T2863-E7S/E6S/S E: 2 AC Timing Parameers & Specificaio ( con' Parameer -E7 -E6 - Uni Address and conrol inpu pulse widh for each inpu Address and conrol inpu seup ime Address and conrol inpu hold ime IPW. 6 IS 7 IH CAS# o CAS# command delay CC ACTIE o ACTIE (same bank command C ACTIE bank a o ACTIE bank b command ACTIE o EA or WITE delay C Four Bank Acivae period 7. FAW ACTIE o PECHAGE command AS 4 7, 4 7, 4 7, Inernal EA o precharge command delay Wrie recovery ime. TP W Auo precharge wrie recovery + precharge ime AL W+ P W+ P W+ P Inernal WITE o EA command delay T W PECHAGE command period P PECHAGE ALL command period PA P+ P+ P+ LOA MOE command cycle ime M E low o,# uncerainy ELA Y IS + + IH IS + + IH IS + + IH EFESH o Acive or efresh o efresh command inerval 27. FC 1 7, , , Average periodic refresh inerval EFI Exi self refresh o non-ea command SN Exi self refresh o EA S. 8 1 FC(MIN X X us FC(MIN FC(MIN Exi self refresh iming reference I SX IS IS IS OT urn-on delay AON OT urn-on ON A AC(MIN + A C(MAX 7 AC(MIN + A C(MAX 7 AC(MIN + A C(MAX OT urn-off delay OF. A OT urn-off OF A AC(MIN + A C(MAX 6 AC(MIN + A C(MAX 6 AC(MIN + A C(MAX 6 OT urn-on (power-down mode AONP + A C(MIN 2 2 x + A C(MAX + A C(MIN 2 2 x + A C(MAX + A C(MIN 2 2 x + A C(MAX OT urn-off (power-down mode AOFP + A C(MIN 2 2. x + A C(MAX + A C(MIN 2 2. x + A C(MAX + A C(MIN 2 2. x + A C(MAX OT o power-down enry laency ANP OT power-down exi laency XP A Exi acive power-down o EA command, M[bi12=] X A Exi acive power-down o EA command, M[bi12=1] XAS 8-AL 7-AL 6-AL Exi precharge power-down o any non-ea command. XP E minimum high/low ime E irium Technology, Inc. 32 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 8 OF 1
9 Produc Specificaio L493T2863-E7S/E6S/S E: 2 Package imeio FONT IEW MAX 4. +/-.1 (2X 8 (2X TYP 6. TYP 2. TYP 2. TYP TYP TYP PIN TYP.4 TYP.6 TYP PIN 199 +/-.1 BA IEW 4. +/-.1 PIN TYP PIN TYP 14 TYP 3 TYP NOTE: dimesio are in millimeers wih olerance +/-.1mm unless oherwise specified. irium Technology, Inc. 32 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 9 OF 1
10 Produc Specificaio L493T2863-E7S/E6S/S E: 2 evision Hisory: ae ev. Page Changes 1/16/7. 1 3/2/9 6/9/9 1 1, 9 Engineering Sample aa shee updae, moved o producion Feaure updae page 1 imeion Package updae page 9 8 /31/1 2 Updae daashee irium Technology, Inc. 32 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 1 OF 1
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Product Specificatio RE:. General Information 5MB 6Mx7 SDRAM PC/PC ECC UNBUFFERED PIN SODIMM Description: The L7S6555E is a 6M x 7 Synchronous Dynamic RAM high deity memory module. This memory module coists
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and
80/110A N-hannel Advanced Power MOSFET Feaures Low On-esisance Fas Swiching 100% Avalanche Tesed epeiive Avalanche Allowed up o Tjmax Lead-Free, ohs omplian Descripion S80110AT designed by he rench processing
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IR Receiver Modules for New TSOP48.. 2 3 MECHANICAL DATA Pinning = OUT, 2 =, 3 = 6672 FEATURES Low supply curren Phoo deecor and preamplifier in one package Inernal filer for PCM frequency Improved shielding
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PI90LV022, PI90LVB022
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DUAL SWITCH-MODE SOLENOID DRIER HIGH CURRENT CAPABILITY (up o.5a per channel) HIGH OLTAGE OPERATI (up o 46 for power sage) HIGH EFFICIENCY SWITCHMODE OPERATI REGULATED OUTPUT CURRENT (adjusable) FEW EXTERNAL
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Reference scanner Dimensioned drawing en 02-2014/06 50117040-01 200 500mm Disance on background/reference 10-30 V DC We reserve he righ o make changes DS_HRTR46Bref_en_50117040_01.fm Robus objec deecion
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Installing remote sites using TCP/IP
v dc Keypad from nework Whie/ 3 Whie/ 4 v dc Keypad from nework Whie/ 3 Whie/ 4 v dc Keypad from nework Whie/ 3 Whie/ 4 +v pu +v pu +v pu v dc Keypad from nework Whie/ 3 Whie/ 4 v dc Keypad from nework
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Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and
Feaures Low On-esisance Fas Swiching 100% Avalanche Tesed epeiive Avalanche Allowed up o Tjmax Lead-Free, ohs omplian Descripion H037N06L0650P designed by he rench processing echniques o achieve exremely
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2 3 MECHANICAL DATA Pinning: = OUT, 2 =, 3 = V S 6672 FEATURES Very low supply curren Phoo deecor and preamplifier in one package Inernal filer for PCM frequency Improved shielding agains EMI Supply volage:
COMBITRON Program Schedule
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functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
H037N06L Feaures Low On-Resisance Fas Swiching 100% Avalanche Tesed Repeiive Avalanche Allowed up o Tjmax Lead-Free, RoHS omplian Descripion H037N06L designed by he rench processing echniques o achieve
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IR Receiver Modules for Remote Control Systems
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Trigger high-speed, retro-reflective sensors for bottles. Dimensioned drawing
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