Product Specifications

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Darcy Potter
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1 PAT NO: Produc Specificaio General Informaion 1GB 128Mx72 2 SAM ECC EGISTEE IMM 240-PIN escripion The VL393T2863M is a 128M X 72 2 SAM high deiy IMM. This memory module coiss of nine CMOS 128MX8 bi wih 8 banks 2 Synchronous AMs in BGA packages, a 25-bi egisered buffers in BGA package, a zero delay PLL clock in BGA package, and a 2K EEPOM in an 8-pin TSSOP package. This module is a 240-pin regisered dual in-line memory module and is inended for mouning ino a connecor socke. ecoupling capaciors are mouned on he prined circui board for each 2 SAM. Feaures. 240-pin, regisered dual in-line memory module (IMM). Fas daa rafer rae: PC Suppors ECC error deecion and correcion. = V = 1.8V. SP = 1.7V o 3.6V. JEEC sandard 1.8V I/O (SSTL_18 compaible). ifferenial daa srobe (S, S# ) opion. ifferenial clock inpus (CK, CK#). Four-bi pre-fech archiecure. LL alig and S raiion wih CK. Suppor duplicae oupu srobe (S/S#). Programmable CAS# laency (CL): 5 (2-667). Wrie laency = ead laency - 1CK. Eigh inernal componen banks for concurren operaion. Programmable burs; lengh (4, 8). Adjusable daa-oupu drive srengh. On-die erminaion (OT). Auo & self refresh, (8K/64ms refresh). Serial presence deec (SP) wih EEPOM. Gold edge conacs. Lead-free ohs. PCB: Heigh 30.00mm (1.181 ), double sided compone. PCB chamfer Order Informaion A0 ~ A13 BA0 ~ BA2 0 ~ 63 CB0 ~ CB7 S0 ~ S8 S0# ~ S8# OT0 CK0, CK0# CKE0 CS0# AS# CAS# WE# ESET# V SA0~SA2 Funcion Address Inpu s Bank Address Inpu s aa Inpu/Oupu Check Bis aa Srobes aa Srobes Complemen On-die Terminaion Conrol ifferenial Clock Inpu Clock Enables Chip Selecs ow Address Srobes Column Address Srobes Wrie Enable egiser ese Inpu Volage Supply 1.8V +/- 0.1V I/O Power 1.8V +/- 0.1V Ground SP Address VL393T2863M-E6 S X AM IE (Opion) AM MANUFACTUE S - SAMSUNG SA SCL M0~M8/ S9~S17 SP aa Inpu/Oupu SP Clock Inpu aa Masks/ aa Srobes (ead) QS9#~S17# aa Srobes Complemen (ead) A10/AP Address inpu/auoprecharg e MOULE SPEE E6: CL5 VL : Lead-free/oHS VEF SP SSTL_18 eference Volage SP Volage Supply 1.7V o 3.6V No Connec Virium Technology, Inc Tomas, ancho Sana Margaria, CA PAGE 1 OF 10

2 PAT NO: Produc Specificaio Configuraion 240-PIN 2 IMM FONT 240-PIN 2 IMM BACK 1 VEF A V V 92 S5# A3 212 M5/ S14 / S14# A2 93 S A M0/ S9 155 M3/ S CK S0# 36 S3# / S9# 156 / S12# 186 CK0# S0 37 S A A10/AP BA BA0 101 SA CB4 191 V CB0 72 V CB5 192 AS# CB1 73 WE# CS0# 223 M6/ S CAS# 104 S6# 134 M1/ S M8/ S V 224 / S15# 15 S1# 45 S8# 75 V 105 S6 135 / S10# 165 / S17# 195 OT S1 46 S8 76 / CS1# A / OT CB ESET# 48 CB2 78 V CB CB V V / CKE CKE M4/ S M7/ S S4# 113 S7# / S13# 233 / S16# BA2 84 S4 114 S V V S2# 57 A M2/ S11 / S11# 176 A A S2 58 A SP SA A SA A SCL A SA1 Virium Technology, Inc Tomas, ancho Sana Margaria, CA PAGE 2 OF 10

3 PAT NO: Produc Specificaio Funcional Block iagram CS0# S0# S0 M0 S4# S4 M M/ S CS# S S# M/ S CS# S S# 4 S1# S1 M1 S5# S5 M M/ S CS# S S# M/ S CS# S S# 5 S2# S2 M2 S6# S6 M M/ S CS# S S# M/ S CS# S S# 6 S3# S3 M3 S7# S7 M M/ S CS# S S# M S CS# S S# 7 S8# S8 M8 CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 M/ S CS# S S# 8 SCL Serial P WP A0 A1 A2 SA0SA1 SP /V SA VEF Serial P CS0# A0-A13 BA0-BA2 AS# CAS# WE# CKE0 OT 0 1:1 E G I S T E CS0# -> CS#: 2 SAMs 0-8 A0-A13 -> A0-A13: 2 SAMs 0-8 BA0-BA2 -> BA0-BA2: 2 SAMs 0-8 AS# -> AS#: 2 SAMs 0-8 CAS# -> CAS#: 2 SAMs 0-8 WE# -> WE#: 2 SAMs 0-8 CKE0 -> CKE0: 2 SAMs 0-8 OT0 -> OT0: 2 SAMs 0-8 CK0 CK0# ESET# P L L OE PCK0 ~ PCK8 -> CK : 2 SAMs 0-8 PCK0# ~ PCK8# -> CK# : 2 SAMs 0-8 PCK9 -> CK : egiser PCK9# -> CK# : egiser ESET# ST# PCK9 PCK9# Noes: 1. Unless oherwise noed, resisor value are 22 ohm +/-5% Virium Technology, Inc Tomas, ancho Sana Margaria, CA PAGE 3 OF 10

4 PAT NO: Produc Specificaio Absolue Maximum aings Symbol Parameer MIN MAX Uni Volage on pin relaive o V V Volage on V pin relaive o V L Volage on L pin relaive o V VIN, VOUT Volage on any pin relaive o V TSTG Sorage emperaure IL IOZ Inpu leakage curren; Any inpu 0V<VIN<; VEF inpu 0V<VIN<0.95V; Oher pi no under es = 0V Oupu leakage curren; 0V<VOUT<V; s and OT are disabled Address, BA, AS#, CAS#, WE# 0 C -5 5 ua CS#, CKE, OT -5 5 ua CK, CK# ua M -5 5 ua, S, S# -5 5 ua IVEF VEF supply leakage curren; VEF = Valid VEF level ua C Operaing Condiio Symbol Parameer Min Typical Max Uni Noes Supply volage V 1 V I/O supply volage V 4 L L supply volage V 4 VEF I/O reference volage 0.49 x V 0.50 x V 0.51 x V V 2 VTT I/O erminaion volage VEF-0.04 VEF VEF+0.04 V 3 Noe: 1., V mus rack each oher. V mus be less han or equal o. 2. VEF is expeced o equal V/2 of he ramiing device and o rack variaio in he C level of he same. Peak-o-peak noise on VEF may no exceed +/-1percen of he C value. Peak-o-peak AC noise on VEF may no exceed +/-2 percen of VEF. This measuremen is o be aken a he neares VEF bypass capacior. 3. VTT is no applied direcly o he device. VTT is a sysem supply for signal erminaion resisors, is expeced o be se equal o VEF and mus rack variaio in he C level of VEF. 4. V racks wih ; L racks wih. Virium Technology, Inc Tomas, ancho Sana Margaria, CA PAGE 4 OF 10

5 PAT NO: Produc Specificaio Operaing Temperaure Condiion Symbol Parameer aing Unis Noes TOPE Operaing emperaure 0-95 Noes: 1. Operaing emperaure is he case surface emperaure on he cener/op side of he AM. For he measuremen condiio, please refer o JEEC JES A 0 o 85 C, operaion emperaure range, all AM specificaio will be suppored. The refresh rae is required o double when 85 C < TOPE <= 95 C 0 C 1,2 Inpu C Logic Level All volages referenced o Symbol Parameer Min Max Uni VIH(C) Inpu High (Logic 1) Volage VEF V V VIL(C) Inpu Low (Logic 0) Volage VEF V Inpu AC Logic Level All volages referenced o Symbol Parameer Min Max Uni VIH(AC) Inpu High (Logic 1) Volage VEF V VIL(AC) Inpu Low (Logic 0) Volage - VEF V Inpu/Oupu Capaciance TA=25 0 C, f=100mhz Parameer Symbol Min Max Uni Inpu capaciance (A0~A13, BA0~BA2, AS#, CAS#, WE#) CIN pf Inpu capaciance (CKE0, OT0, CS0#) CIN pf Inpu capaciance (CK0, CK0#) CIN3 6 7 pf Inpu/Oupu capaciance (, S, S#, M, CB) CIO pf Virium Technology, Inc Tomas, ancho Sana Margaria, CA PAGE 5 OF 10

6 PAT NO: Produc Specificaio I Specificaion Condiion Symbol -E6 Uni Operaing one bank acive-precharge; = ; = ; = CKE is HIGH, CS# is HIGH beween valid CK CK(I) C C(I) AS AS MIN(I); commands; Address bus inpus are SWITCHING; aa bus inpus are SWITCHING Operaing one bank acive-read-precharge; IOUT = 0mA; BL = 4; CL = CL(I); = ; = ; = CKE is HIGH, CK CK(I) C C(I) AS AS MIN(I); CS# is HIGH beween valid commands; Address bus inpus are SWITCHING; aa bus inpus are SWITCHING; aa paern is same as I4W. Precharge power-down curren; All banks idle; = ; CKE is LOW; Oher conrol and address bus inpus are STABLE; CK CK(I) aa bus inpus are FLOATING Precharge quie sandby curren; All banks idle; = ; CKE is HIGH; CS# is HIGH; Oher conrol and address bus inpus CK CK(I) are STABLE; aa bus inpus are FLOATING Precharge sandby curren; All banks idle; = ; CKE is HIGH; CS# is HIGH; Oher conrol and address bus inpus CK CK(I) are STABLE; aa bus inpus are SWITCHING. I0* 930 ma I1* 1020 ma I2P** 435 ma I2Q** 570 ma I2N** 615 ma Acive power-down curren; All banks open; = ; CKE is LOW; Oher conrol CK CK(I) and address bus inpus are STABLE; aa bus inpus are FLOATING. Fas PN Exi MS(12) = 0mA 615 ma I3P** Slow PN Exi MS(12) = 1mA 462 ma Acive sandby curren; All banks open; = ; = ; = ;CKE is HIGH, CS# is HIGH beween CK CK(I) C C(I) AS AS MIN(I)) valid commands; Oher conrol and address bus inpus are SWITCHING; aa bus inpus are SWITCHING. Operaing burs wrie curren; All banks open; Coninuous burs wries; BL = 4; CL = CL(I); AL = 0; = ; CK CK(I) = ; = ; CKE is HIGH, CS# is HIGH beween valid commands; Address AS AS MAX(I) P P(I) bus inpus are SWITCHING; aa bus inpus are SWITCHING. Operaing burs read curren; All banks open; Coninuous burs reads; IOUT = 0mA; BL = 4; CL = CL(I); AL = 0; = ; = ; = ; CKE is HIGH, CS# is HIGH beween valid CK CK(I) AS AS MAX(I) P P(I) commands; Address bus inpus are SWITCHING; aa paern is same as I4W. Burs auo refresh curren; = ; efresh command a every inerval; CKE is HIGH; CS# is HIGH beween CK CK(I) FC(I) valid commands; Oher conrol and address bus inpus are SWITCHING; aa bus inpus are SWITCHING. I3N** 750 ma I4W* 1245 ma I4* 1380 ma I5** 1560 ma Self refresh curren; CK and CK# a 0V; CKE < 0.2V; Oher conrol and address bus inpus are FLOATING; aa bus inpus are FLOATING. Normal I6** 135 ma Operaing bank inerleave read curren; All bank inerleaving reads; IOUT = 0mA; BL = 4; CL = CL(I); AL = - 1* ; C(I) CK(I) = ; = ; = ; = 1* ; CKE is HIGH; CS# is HIGH beween CK CK(I) C C(I) (I) C CK(I) valid commands; Address bus inpus are STABLE during ESELECTs; aa bus inpus are SWITCHING. I7* 2370 ma Noes: Is were calculaed using Samsung Q-die componen. *: Value calculaed as one module rank in his operaing condiion, and all oher module ranks in I2P ( CKE LOW) mode. **: Value calculaed reflecs all module ranks in his operaing condiion. Virium Technology, Inc Tomas, ancho Sana Margaria, CA PAGE 6 OF 10

7 aa Srobe aa Clock PAT NO: Produc Specificaio AC Timing Parameers & Specificaio Parameer Symbol Min -E6 Max Uni Clock cycle ime CL=5 CL=4 CL=3 C K 5) ( C K 4) ( - - C K 3) ( - - CK high-level widh H(AVG) CK low-level widh L(AVG).48 C.48 C CK CK Half clock period P H MIN ( ) CH, C L Clock jier oupu access ime from CK/CK# JIT 125 AC aa-ou high impedance window from CK/CK# aa-ou low-impedance window from CK/CK# HZ AC (MAX) LZ AC (MIN ) AC (MAX) and M inpu seup ime relaive o S and M inpu hold ime relaive o S S 00 H and M inpu pulse widh (for each inpu) IPW aa hold skew facor HS.35 0 CK 40 Q 3 S hold, per access S o firs o go nonvalid, QH HP - QHS aa valid oupu window (VW) VW QH - SQ S inpu high pulse widh QSH S inpu low pulse widh QSL S oupu access ime fromck/ck# QSCK S falling edge o CK rising seup ime SS CK 0 CK CK S falling edge from CK rising hold ime SH. 2 0 CK S skew, per access S o las valid, per group, 40 SQ 2 S read preamble PE S read posamble PST CK CK S wrie preamble seup ime 0 WPES S wrie preamble PE S wrie posamble PST.35 W. 4 W 0 CK CK Wrie command o firs S laching raiion QSS L-0.25 W WL+0.25 Virium Technology, Inc Tomas, ancho Sana Margaria, CA PAGE 7 OF 10 K C

8 Power-own OT Self efresh Command and Address PAT NO: Produc Specificaio AC Timing Parameers & Specificaio ( con') Parameer Symbol Min -E6 Max Uni Address and conrol inpu pulse widh for each inpu Address and conrol inpu seup ime Address and conrol inpu hold ime IPW. 6 IS 00 IH 75 0 CK 2 2 CAS# o CAS# command delay CC 2 CK ACTIVE o ACTIVE (same bank) command C 60 ACTIVE bank a o ACTIVE bank b command ACTIVE o EA or WITE delay C Four Bank Acivae period 7. 5 FAW 3 ACTIVE o PECHAGE command AS ,000 Inernal EA o precharge Wrie recovery ime command delay. 5 TP 7 W 15 Auo precharge wrie recovery + precharge ime AL W+ P CK Inernal WITE o EA command delay T. 5 W 7 PECHAGE command period P 15 LOA MOE command cycle ime M 2 CK CKE low o CK,CK# uncerainy ELA Y IS + CK + IH EFESH o Acive or efresh o efresh command inerval FC 1 70,000 Average periodic refresh inerval EFI Exi self refresh o non-ea command SN Exi self refresh o EA S. 8 1 FC(MIN 0 X ) 00 X 7 us + 2 CK Exi self refresh iming reference I SX IS OT urn-on delay AON 2 2 CK OT urn-on ON A AC(MIN ) + A C(MAX) 700 OT urn-off delay OF. 5 A CK OT urn-off OF A AC(MIN ) + A C(MAX) 600 OT urn-on (power-down mode) AONP + A C(MIN ) x CK A C(MAX) OT urn-off (power-down mode) AOFP + A C(MIN ) x CK A C(MAX) OT o power-down enry laency ANP 3 CK OT power-down exi laency AXP 8 CK Exi acive power-down o EA command, M[bi12=0] X 2 CK A Exi acive power-down o EA command, M[bi12=1] XAS 7-AL CK Exi precharge command. power-down o any non-ea XP 2 CK CKE minimum high/low ime CKE 3 CK Virium Technology, Inc Tomas, ancho Sana Margaria, CA PAGE 8 OF 10

9 PAT NO: Produc Specificaio Package imeio 3.00 (4X) FONT VIEW MAX / (4X) A (2X) PIN PIN / BACK VIEW 0.20 ( Max ) (2X) 0.05 ( Min ) (2X) 0.20 ( Max ) 0.05 ( Min ) ETAIL A 3.80 PIN 240 PIN NOTE: All dimeio are in millimeers wih olerance +/- 0.15mm unless oherwise specified. Virium Technology, Inc Tomas, ancho Sana Margaria, CA PAGE 9 OF 10

10 PAT NO: Produc Specificaio evision Hisory: ae ev. Page Changes 07/31/ All Spec release Updae informaion for using Samsung AM F-die page 1 08 /28/ ,4,5 Updae Inpu leak curren of CK, CK# = +/-250 page 4 Updae Inpu/Oupu capaciance page 5 Virium Technology, Inc Tomas, ancho Sana Margaria, CA PAGE 10 OF 10

Product Specifications

Product Specifications Produc Specificaio L470T286A-E6S/S/CCS E: 1 General Informaion 1GB 128Mx 64 2 SAM NON-ECC UNBUFFEE SOIMM 200-PIN escripion The L470T286A is a 128Mx64 2 SAM high deiy SOIMM. This memory module coiss of