Product Specifications

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1 PAT NO: Produc Specificaio L493T663-E7/E6//CC E: 3 General Informaion GB 6MX7 SAM ECC 00 PIN SO-IMM escripion: The L493T663 is a 6Mx7 ouble aa ae SAM high deiy SO-IMM. This memory module coiss of eigheen CMOS 18Mx8 bi wih 8 banks Synchronous AMs in BGA packages, wo -bi egisered buffers in BGA packages, a zero delay PLL clock in BGA package, and a K EEPOM in an 8-pin MLF package. This module is a 00-pin small-ouline regisered dual in-line memory module and is inended for mouning ino a connecor socke. ecoupling capaciors are mouned on he prined circui board for each SAM. Feaures: egisered SO-IMM 9.8mm (17 module heigh Suppors ECC error deecion and correcion aa rafer raes: PC-6400, PC-300, PC-400 or PC-300 Uilizes 1Gbi SAM compone Performance range: 667Mb/sec/pin, 33Mb/sec/pin, or 400Mb/sec/pin Power supply: dd = ddq = 8 ± 1 JEEC sandard 8 I/O (SSTL_18-Compaible On-die erminaion (OT ifferenial daa srobe (QS, QS# opion ifferenial clock inpus (, # 8us average periodic refresh inerval Programmable CAS# Laency: 3, 4,, 6 Posed CAS# addiive Laency: 0, 1,, 3, and 4 Eigh inernal banks for concurren operaion (componen On memory PLL Clock and egiser drivers Serial presence deec (SP wih +7 o +3.6 EEPOM JEEC pin ou Order Informaion : L493T663-E7 X X AM IE (opion AM MANUFACTUE S - SAMSUNG M - MICON MOULE SPEE E7: CL6 E6: CL : CL4 CC: CL3 A0~A13 BA0~BA Q0~Q63 CB0~CB7 QS0~QS8 QS0#~QS8# OT0, OT1, # E0, E1 CS0#, CS1# AS# CAS# WE# ESET# M0~M8 A/AP SP SA0~SA1 SA SCL EF NC Funcion Address Inpu s Bank Address Inpu s aa Inpu/Oupu Check Bis aa Srobes aa Srobes Complemen On-die Terminaion Conrol Clock Inpu Clock Enables Chip Selecs ow Address Srobes Column Address Srobes Wrie Enable egiser ese Inpu aa Masks olage Supply 8 +/- 1 Address Inpu/Auoprecharg e SP olage Supply 7 o 3.6 Ground SP Address SP aa Inpu/Oupu SP Clock Inpu SSTL_18 eference olage No Connec L : Lead-free/oHS irium Technology, Inc. 300 Tomas, ancho Sana Margaria, CA 9688 Tel: Fax: PAGE 1 OF

2 PAT NO: Produc Specificaio L493T663-E7/E6//CC E: 3 Configuraion 00-PIN SO-IMM FONT 00-PIN SO-IMM BA 1 EF 1 Q A6 1 3 Q0 3 Q19 3 A 13 QS# 4 Q4 4 Q8 4 A4 14 M A3 1 QS 6 Q 6 Q Q1 7 Q4 7 A A1 18 Q46 9 QS0# 9 Q 9 19 Q4 M0 60 M3 1 A0 160 Q47 11 QS A/AP 161 Q BA QS3# 113 BA Q6 64 Q Q 1 Q 6 QS3 11 AS# 16 Q48 16 Q7 66 Q WE# 166 Q3 17 Q Q CS0# Q6 119 CAS# Q1 70 CB4 10 OT0 170 M6 1 Q8 71 Q7 11 CS1# 171 QS6# Q13 7 CB 1 A Q QS Q4 7 CB0 1 OT M1 76 M Q 7 QS1# 77 CB1 17 NC/ CS3# 177 Q # QS Q3 179 Q1 30 Q14 80 CB Q QS8# Q1 8 CB7 13 Q36 18 Q61 33 Q 83 QS8 133 Q Q Q Q QS4# 18 Q7 36 Q0 86 CB M E0 137 QS Q1 88 CB3 138 M4 188 Q6 39 Q16 89 E QS7# Q17 91 NC/ CS# 141 Q QS7 4 ESET# 9 BA 14 Q38 19 Q Q3 193 Q8 44 M 94 NC 144 Q SA 4 QS# 9 A A SCL 47 QS 97 A9 147 Q Q9 48 Q Q SA A7 149 Q SP 0 Q3 0 A8 Q4 00 SA0 Noe: CS#, CS3# (pi 91, 17 are used for 4 rank IMMs. ESET (pin 4 ESET is conneced o boh OE of he PLL and ese of he regiser for 7-bi egisered SO-IMM ONLY irium Technology, Inc. 300 Tomas, ancho Sana Margaria, CA 9688 Tel: Fax: PAGE OF

3 PAT NO: Produc Specificaio L493T663-E7/E6//CC E: 3 Funcional Block iagram CS1# CS0# QS0 QS0# M0 QS4 QS4# M4 Q0 Q1 Q Q3 Q4 Q Q6 Q7 M/ CS# QS QS# 0 M/ CS# QS QS# M/ CS# QS QS# M/ CS# QS QS# 9 Q3 Q33 Q34 Q3 Q36 Q37 Q38 Q QS1 QS1# M1 QS QS# M Q8 Q9 Q Q11 Q1 Q13 Q14 Q1 M/ CS# QS QS# M/ CS# QS QS# M/ CS# QS QS# M/ CS# QS QS# Q40 1 Q41 Q4 14 Q43 Q44 Q4 Q46 Q47 QS QS# M QS6 QS6# M6 Q16 Q17 Q18 Q19 Q0 Q1 Q Q3 M/ CS# QS QS# M/ CS# QS QS# M/ CS# QS QS# M/ CS# QS QS# Q48 11 Q Q0 Q1 Q Q3 Q4 Q QS3 QS3# M3 QS7 QS7# M7 Q4 Q Q6 Q7 Q8 Q9 Q30 Q31 M/ CS# QS QS# M/ CS# QS QS# M/ CS# QS QS# M/ CS# QS QS# Q6 3 1 Q Q8 Q9 Q60 Q61 Q6 Q63 QS8 QS8# M8 CS0# CS1# BA0-BA A0-A13 AS# CAS# WE# E0 E1 OT0 OT1 CB0 CB1 CB CB3 CB4 CB CB6 CB7 M/ 1: E G I S T E CS# QS QS# M/ CS# QS QS# SCL WP 8 17 CS0# -> CS# : SAMs 0-8 CS1# -> CS# : SAMs 9-17 BA0-BA -> BA0-BA : SAMs 0-17 A0-A13 -> A0-A13 : SAMs 0-17 AS# -> AS:# SAMs 0-17 CAS# -> CAS:# SAMs 0-17 WE# -> WE# : SAMs 0-17 E0 -> E : SAMs 0-8 E1 -> E : SAMs 9-17 OT0 -> OT0 : SAMs 0-8 OT1 -> OT1 : SAMs 9-17 Serial P A0 A1 SA0 SA1 A SA SA 0 0# SP / Q EF SS 10 ** ESET# PLL See noe on page # Noes : Unless oherwise noed, resiser values are Ohms Serial P SAM X SAM X SAM X SAM X SAM X SAM X SAM X SAM X SAM X EGISTE X ESET#** ** #** ST# ** ESET#, and # connecs o boh egisers. Oher signals connec o one of wo egisers. irium Technology, Inc. 300 Tomas, ancho Sana Margaria, CA 9688 Tel: Fax: PAGE 3 OF

4 PAT NO: Produc Specificaio L493T663-E7/E6//CC E: 3 Absolue imum aings Parameer MIN MAX Uni Q L IN, OUT T STG olage on olage on olage on Q L pin relaive o p p in relaive o in relaive o olage on any pin relaive o SS 0 SS SS SS Sorage emperaur e C IL IOZ Inpu leakage curren; Any inpu 0<IN< ; EF inpu 0<IN<9; Oher pi no under es = 0 Oupu leakage curren; 0<OUT< Q; Qs and OT are disabled Command/Address, AS#, CAS#, WE#, CS#, E, OT, BA - ua, # - ua M - ua Q, QS, QS# - ua I EF EF leakage curren; EF = alid EF level ua C Operaing Condiio volages referenced o Parameer Typica l Uni Noes Supply volage I/O Supply volage Q L Supply volage L I/O eference volage EF 49 x Q 0 x Q 1 x Q I/O Terminaion volage TT EF 04 - EF EF Noes:, Q mus rack each oher. Q mus be less han or equal o.. EF is expeced o equal Q/ of he ramiing device and o rack variaio in he C level of he same. Peak-o- peak noise on EF may no exceed +/-1percen of he C value. Peak-o-peak AC noise on EF may no exceed +/- percen of EF. This measuremen is o be aken a he neares EF bypass capacior. 3. TT is no applied direcly o he device. TT is a sysem supply for signal erminaion resisors, is expeced o be se equal o EF and mus rack variaio in he C level of EF. 4. Q racks wih ; L racks wih. irium Technology, Inc. 300 Tomas, ancho Sana Margaria, CA 9688 Tel: Fax: PAGE 4 OF

5 PAT NO: Produc Specificaio L493T663-E7/E6//CC E: 3 Operaing Temperaure Condiion Parameer aing Unis Noes Operaing emperaure T PE O o C 1, Noes: Operaing emperaure is he case surface emperaure on he cener/op side of he AM. For he measuremen condiio, please refer o JEEC JES. 0 A 0-8 C, operaion emperaure range, all AM specificaio will be suppored. The refresh rae is required o double when 8 C < TOPE <= 9 C Inpu C Logic Level volages referenced o Parameer Uni I npu High (Logic 1 olage IH(C EF + 1 Q I npu Low (Logic 0 olage IL(C -300 EF - 1 Inpu AC Logic Level volages referenced o Parameer Uni A C Inpu High (Logic 1 olage -400 & -33 IH(AC EF A C Inpu High (Logic 1 olage -667 & -800 IH(AC EF A C Inpu Low (Logic 0 olage -400 & -33 IL(AC - EF - 0 A C Inpu Low (Logic 0 olage -667 & -800 IL(AC - EF - 00 Inpu/Oupu Capaciance 0 TA= C, f=0mhz Parameer Uni Inpu capaciance (A0~A13, BA0~BA, AS#, CAS#, WE# CIN Inpu capaciance (E0, E1, (OT0, OT1 CIN 11 1 Inpu capaciance (CS0# ~ CS1# CIN Inpu capaciance (, # CIN4 11 Inpu/Oupu capaciance (Q, QS, QS#, M, CB CIO (E6,E CIO (,CC 9 1 irium Technology, Inc. 300 Tomas, ancho Sana Margaria, CA 9688 Tel: Fax: PAGE OF

6 PAT NO: Produc Specificaio L493T663-E7/E6//CC E: 3 I Specificaion Condiion O peraing one bank acive-precharge; = ; = ; = E is HIGH, CS# is HIGH beween valid C C(I AS AS MIN(I ; commands; Address bus inpus are SWITCHING; aa bus inpus are SWITCHING O peraing one bank acive-read-precharge ; IOUT = 0; BL = 4; CL = CL(I; = ; = ; = E is HIGH, C C(I AS AS MIN(I ; CS# is HIGH beween valid commands; Address bus inpus are SWITCHING; aa bus inpus are SWITCHING; aa paern is same as I4W. P recharge power-down curren; banks idle; = ; E is LOW; Oher conrol and address bus inpus are STABLE K(I aa bus inpus are FLOATING C ; P recharge quie sandby curren; banks idle; = ; E is HIGH; CS# is HIGH; Oher conrol and address bus inpus are STABLE; aa bus inpus are FLOATING P recharge sandby curren; banks idle; = ; E is HIGH; CS# is HIGH; Oher conrol and address bus inpus are STABLE; aa bus inpus are SWITCHING. -E7 -E6 - -CC Uni I0* I1* IP** IQ** IN** A cive power-down curren; banks open; = ; E is LOW; Oher conrol and address bus inpus are STABLE; aa bus inpus are FLOATING. Fas PN Exi MS(1 = 0 I3P** Slow PN Exi MS(1 = A cive sandby curren; banks open; = ; = ; = ;E is HIGH, CS# is HIGH beween C C(I AS AS MIN(I valid commands; Oher conrol and address bus inpus are SWITCHING; aa bus inpus are SWITCHING. O peraing burs wrie curren; banks open; Coninuous burs wries; BL = 4; CL = CL(I; AL = 0; = ; C K(I = ; = ; E is HIGH, CS# is HIGH beween valid commands; Address AS AS MAX(I P P(I bus inpus are SWITCHING; aa bus inpus are SWITCHING. O peraing burs read curren; banks open; Coninuous burs reads; IOUT = 0; BL = 4; CL = CL(I; AL = 0; = ; = ; = ; E is HIGH, CS# is HIGH beween valid AS AS MAX(I P P(I commands; Address bus inpus are SWITCHING; aa paern is same as I4W. I3N** I4W* I4* Burs auo refresh curren; = ; efresh command a every inerval; E is HIGH; CS# is HIGH beween FC(I valid commands; Oher conrol and address bus inpus are SWITCHING; aa bus inpus are SWITCHING. I** Self refresh curren; C K and # a 0; E < ; Oher conrol and address bus inpus are FLOATING; aa bus inpus are FLOATING. N ormal I6* * Operaing bank inerleave read curren; A ll bank inerleaving reads; IOUT = 0; BL = 4; CL = CL(I; AL = - 1* ; C(I C K(I = ; = ; = ; = 1* ; E is HIGH; CS# is HIGH beween C C(I (I C valid commands; Address bus inpus are STABLE during ESELECTs; aa bus inpus are SWITCHING. I7* Noes: I specificaion is based on Samsung compone. Oher AM Manufacurers specificaion may be differen. *: alue calculaed as one module rank in his operaing condiion, and all oher module ranks in IP ( E LOW mode. **: alue calculaed reflecs all module ranks in his operaing condiion. irium Technology, Inc. 300 Tomas, ancho Sana Margaria, CA 9688 Tel: Fax: PAGE 6 OF

7 aa Srobe aa Clock PAT NO: Produc Specificaio L493T663-E7/E6//CC E: 3 AC Timing Parameers & Specificaio Parameer -E7 -E6 - -CC Uni Clock cycle ime CL= CL=4 CL=3 C K ( C K 4 ( ,70 8,000,000 8,000 C K 3 ( ,000 8,000,000 8,000 high-level widh low-level widh CH.4 CL Half clock period HP MIN ( CH, C L MIN ( CH, C L MIN ( CH, C L MIN ( CH, C L Clock jier Q oupu access ime from /# JIT 0 AC aa-ou high impedance window from /# aa-ou low-impedance window from /# Q and M inpu seup ime relaive o QS HZ AC (MAX AC (MAX AC (MAX AC (MAX LZ AC (MIN AC (MAX AC (MIN AC (MAX AC (MIN AC (MAX AC (MIN AC (MAX S Q and M inpu hold ime relaive o QS H Q and M inpu pulse widh (for each inpu IPW aa hold skew facor HS Q Q QS hold, QS o firs Q o go nonvalid, per access QH HP - QHS HP - QHS HP - QHS HP - QHS aa valid oupu window (W W QH - QSQ QH - QSQ QH - QSQ QH - QSQ QS inpu high pulse widh QSH QS inpu low pulse widh QSL QS oupu access ime from/# QS QS falling edge o rising seup ime SS QS falling edge from rising hold ime SH QS Q skew, QS o las Q valid, per group, per access 00 QSQ QS read preamble PE QS read posamble PST QS wrie preamble seup ime WPES QS wrie preamble PE QS wrie posamble PST.3 W. 4 W Wrie command o firs QS laching raiion QSS L- W WL+ WL- WL+ WL- WL+ WL- WL+ irium Technology, Inc. 300 Tomas, ancho Sana Margaria, CA 9688 Tel: Fax: PAGE 7 OF K C

8 Power-own OT Self efresh Command and Address PAT NO: Produc Specificaio L493T663-E7/E6//CC E: 3 AC Timing Parameers & Specificaio ( con' Parameer -E7 -E6 - -CC Uni Address and conrol inpu pulse widh for each inpu Address and conrol inpu seup ime Address and conrol inpu hold ime IPW. 6 IS 7 IH CAS# o CAS# command delay CC ACTIE o ACTIE (same bank command C ACTIE bank a o ACTIE bank b command ACTIE o EA or WITE delay C Four Bank Acivae period FAW ACTIE o PECHAGE command AS 4 70, , , ,000 Inernal EA o precharge command delay Wrie recovery ime. TP 7 W Auo precharge wrie recovery + precharge ime AL W+ P W+ P W+ P W+ P Inernal WITE o EA command delay T. W 7 PECHAGE command period P PECHAGE ALL command period PA P P P P LOA MOE command cycle ime M E low o,# uncerainy ELA Y IS + + IH IS + + IH IS + + IH IS + + IH EFESH o Acive command inerval or efresh o efresh FC 1 70, , , ,000 Average periodic refresh inerval EFI us Exi self refresh o non-ea command XSN + - FC(MIN + - FC(MIN + - FC(MIN + - FC(MIN Exi self refresh o EA S 00 X Exi self refresh iming reference I SX IS IS IS IS OT urn-on delay AON OT urn-on ON A AC(MIN + A C(MAX 700 AC(MIN + A C(MAX 700 AC(MIN + A C(MAX 00 AC(MIN + A C(MAX 00 OT urn-off delay OF. A OT urn-off OF A AC(MIN + A C(MAX 600 AC(MIN + A C(MAX 600 AC(MIN + A C(MAX 600 AC(MIN + A C(MAX 600 OT urn-on (power-down mode AONP + A C(MIN x K + C + A C(MAX 00 + A C(MIN x K + C + A C(MAX 00 + A C(MIN x K + C + A C(MAX 00 + A C(MIN x K + C + A C(MAX 00 OT urn-off (power-down mode AOFP + A C(MIN. x C(MAX A + A C(MIN. x C(MAX A + A C(MIN. x C(MAX A + A C(MIN. x C(MAX A OT o power-down enry laency ANP OT power-down exi laency XP A Exi acive power-down o EA command, M[bi1=0] X A Exi acive power-down o EA command, M[bi1=1] XAS 8-AL 7-AL 6-AL 6-AL Exi precharge command. power-down o any non-ea XP E minimum high/low ime E irium Technology, Inc. 300 Tomas, ancho Sana Margaria, CA 9688 Tel: Fax: PAGE 8 OF

9 PAT NO: Produc Specificaio L493T663-E7/E6//CC E: 3 Package imeio FONT IEW MAX /- (X 80 (X TYP 6.00 TYP. TYP 00 TYP TYP 00 TYP PIN TYP 4 TYP 60 TYP PIN /- BA IEW 4.0 TYP PIN 00 PIN 440 TYP 140 TYP 3 TYP NOTE: dimesio are in millimeers wih olerance +/- 1mm unless oherwise specified. irium Technology, Inc. 300 Tomas, ancho Sana Margaria, CA 9688 Tel: Fax: PAGE 9 OF

10 PAT NO: Produc Specificaio L493T663-E7/E6//CC E: 3 evision Hisory: ae ev. Page Changes /0/ /6/008 1 eleased spec pages: Added speed -800 (E7 & Page : updaed I able 0/1/009 1, 4,, 6, 7, 8, aa shee updae 06/1/ imeion Package updae irium Technology, Inc. 300 Tomas, ancho Sana Margaria, CA 9688 Tel: Fax: PAGE OF

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