Product Specifications

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1 Produc Specificaio L470T286A-E6S/S/CCS E: 1 General Informaion 1GB 128Mx 64 2 SAM NON-ECC UNBUFFEE SOIMM 200-PIN escripion The L470T286A is a 128Mx64 2 SAM high deiy SOIMM. This memory module coiss of eigh CMOS 128Mx8 bi wih 8 banks 2 Synchronous AMs in BGA packages and a 2 EEPOM in an 8-pin TSSOP package. This module is a 200-pin small-ouline dual in-line memory module and is inended for mouning ino a connecor socke. ecoupling capaciors are mouned on he prined circui board for each 2 SAM. Feaures. 200-pin, small-ouline dual in-line memory module (SOIMM. Fas daa rafer raes: PC2-00, PC2-4200, and PC = = 8. SP = 7 o.6. JEEC sandard 8 I/O (SSTL_18 compaible. ifferenial daa srobe (S, S# opion. Four-bi prefech archiecure. LL alig and S raiion wih. Programmable CAS# Laency (CL: (2-667, 4 (2-, ( Programmable burs; lengh (4, 8. On-die erminaion (OT. Auo & Self refresh, (8/64ms refresh. Serial presence deec (SP wih EEPOM. Gold edge PCB conacs. Lead-free, ohs complian. PCB: Heigh 0.00mm (181, double sided compone A0~A1 BA0~BA2 0~6 S0~S7 S0#~S7# OT0 0,0#,1,1# E0 CS0# AS# Funcion Address Inpu s Bank Address Inpu s aa Inpu/Oupu aa Srobes aa Srobes Complemen On-die Terminaion Conrol Clock Inpu Clock Enables Chip Selecs ow Address Srobes CAS# Column Address Srobes WE# Wrie Enable Order Informaion olage Supply 8 +/- 0.1 Ground L470T286A-E6 S X SA0~SA1 SP Address SA SP aa Inpu/Oupu AM IE (opion SCL SP Clock Inpu AM MANUFACTUE S - SAMSUNG MOULE SPEE E6: CL : CL4 CC: CL M0~M7 A10/AP EF SP aa Masks Address Inpu/Auoprecharg e SSTL_18 eference olage SP olage Supply 7 o.6 L : Lead-free/oHS No Connec irium Technology, Inc. 002 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 1 OF 10

2 Produc Specificaio L470T286A-E6S/S/CCS E: 1 Configuraion 200-PIN 2 SOIMM FONT 200-PIN 2 SOIMM BA 1 EF 1 S2 101 A M2 102 A A10/AP BA BA AS# WE# M CS0# S0# S CAS# OT CS1# * A # M S6# S# OT1* 169 S S M M S1# 79 E0 129 S4# E1* 10 M S S # BA M S7# S A A A A A A SA S# A 147 M 197 SCL A4 148 S 198 SA0 49 S2# 99 A SP A SA1 * These pi are no used in his module. irium Technology, Inc. 002 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 2 OF 10

3 Produc Specificaio L470T286A-E6S/S/CCS E: 1 Funcional Block iagram CS0# S0# S0 M0 S1# S1 M1 S2# S2 M2 S# S M BA0-BA2 A0-A1 AS# CAS# WE# E0 OT M M M M CS#S S# U0 CS# S S# U1 CS# S S# U2 CS# S S# U BA0-BA2: 2 SAMs A0-A1: 2 SAMs AS#: 2 SAMs CAS#: 2 SAMs WE#: 2 SAMs E0: 2 SAMs OT0: 2 SAMs SCL S4# S4 M4 S# S M S6# S6 M6 S7# S7 M7 Serial P WP A0 A1 A2 SA0 SA1 SP, U SA Serial P 2 SAMs M CS# S S# U4 M CS# S S# U M CS# S S# U6 M CS# S S# 0 0# 1 1# U U0, U1, U2, U U4, U, U6, U7 EF 2 SAMs 2 SAMs NOTE: Unless o herwi se noed, resisor values are 22 irium Technology, Inc. 002 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE OF 10

4 Produc Specificaio L470T286A-E6S/S/CCS E: 1 Absolue imum aings Parameer MIN MAX Uni L IN, OUT T STG olage on olage on olage on L pin relaive o p p in relaive o in relaive o olage on any pin relaive o SS 0 SS 0. SS 0. SS Sorage emperaur e C IL IOZ Inpu leakage curren; Any inpu 0<IN<; EF inpu 0<IN<0.9; Oher pi no under es = 0 Oupu leakage curren; 0<OUT<; s and OT are disabled Command/Address, AS#, CAS#, WE#, CS#, E ua, # ua M - ua, S, S# - ua I EF EF leakage curren; EF = alid EF level ua C Operaing Condiio volages referenced o Parameer Typica l Uni Noes Supply volage I/O Supply volage L Supply volage L I/O eference volage EF 0.49 x 0.0 x 0.1 x 2 I/O Terminaion volage TT EF-0.04 EF EF Noes:, mus rack each oher. mus be less han or equal o. 2. EF is expeced o equal /2 of he ramiing device and o rack variaio in he C level of he same. Peak-o- peak noise on EF may no exceed +/-1percen of he C value. Peak-o-peak AC noise on EF may no exceed +/-2 percen of EF. This measuremen is o be aken a he neares EF bypass capacior.. TT is no applied direcly o he device. TT is a sysem supply for signal erminaion resisors, is expeced o be se equal o EF and mus rack variaio in he C level of EF. 4. racks wih ; L racks wih. irium Technology, Inc. 002 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 4 OF 10

5 Produc Specificaio L470T286A-E6S/S/CCS E: 1 Operaing Temperaure Condiion Parameer aing Unis Noes Operaing emperaure T PE O o C 1, 2 Noes: Operaing emperaure is he case surface emperaure on he cener/op side of he AM. For he measuremen condiio, please refer o JEEC JES A 0 o +8 C, operaion emperaure range, all AM specificaio will be suppored. The refresh rae is required o double when 8 C < TOPE <= 9 C I Inpu C Logic Level volages referenced o Parameer Uni I npu High (Logic 1 olage IH(C EF I npu Low (Logic 0 olage IL(C EF Inpu AC Logic Level volages referenced o Parameer Uni A C Inpu High (Logic 1 olage & 2- IH(AC EF A C Inpu High (Logic 1 olage IH(AC EF A C Inpu Low (Logic 0 olage & 2- IL(AC - EF A C Inpu Low (Logic 0 olage IL(AC - EF Inpu/Oupu Capaciance 0 TA=2 C, f=100mhz Parameer Uni Inpu capaciance (A0~A1, BA0~BA2, AS#, CAS#, WE# CIN pf Inpu capaciance (E0, (OT0 CIN pf Inpu capaciance (CS0# CIN pf Inpu capaciance (0, 0#, 1, 1# CIN pf Inpu/Oupu capaciance (, S, S#, M CIO 6. 8 pf irium Technology, Inc. 002 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE OF 10

6 Produc Specificaio L470T286A-E6S/S/CCS E: 1 I Specificaion Condiion O peraing one bank acive-precharge; = ; = ; = E is HIGH, CS# is HIGH beween valid C C(I AS AS MIN(I ; commands; Address bus inpus are SWITCHING; aa bus inpus are SWITCHING O peraing one bank acive-read-precharge ; IOUT = 0; BL = 4; CL = CL(I; = ; = ; = E is HIGH, C C(I AS AS MIN(I ; CS# is HIGH beween valid commands; Address bus inpus are SWITCHING; aa bus inpus are SWITCHING; aa paern is same as I4W. P recharge power-down curren; banks idle; = ; E is LOW; Oher conrol and address bus inpus are STABLE (I aa bus inpus are FLOATING C ; P recharge quie sandby curren; banks idle; = ; E is HIGH; CS# is HIGH; Oher conrol and address bus inpus are STABLE; aa bus inpus are FLOATING P recharge sandby curren; banks idle; = ; E is HIGH; CS# is HIGH; Oher conrol and address bus inpus are STABLE; aa bus inpus are SWITCHING. -E6 - -CC Uni I I I2P I2Q I2N A cive power-down curren; banks open; = ; E is LOW; Oher conrol and address bus inpus are STABLE; aa bus inpus are FLOATING. Fas PN Exi MS(12 = 0 IP Slow PN Exi MS(12 = A cive sandby curren; banks open; = ; = ; = ;E is HIGH, CS# is HIGH beween C C(I AS AS MIN(I valid commands; Oher conrol and address bus inpus are SWITCHING; aa bus inpus are SWITCHING. O peraing burs wrie curren; banks open; Coninuous burs wries; BL = 4; CL = CL(I; AL = 0; = ; C (I = ; = ; E is HIGH, CS# is HIGH beween valid commands; Address AS AS MAX(I P P(I bus inpus are SWITCHING; aa bus inpus are SWITCHING. O peraing burs read curren; banks open; Coninuous burs reads; IOUT = 0; BL = 4; CL = CL(I; AL = 0; = ; = ; = ; E is HIGH, CS# is HIGH beween valid AS AS MAX(I P P(I commands; Address bus inpus are SWITCHING; aa paern is same as I4W. IN I4W I Burs auo refresh curren; = ; efresh command a every inerval; E is HIGH; CS# is HIGH beween FC(I valid commands; Oher conrol and address bus inpus are SWITCHING; aa bus inpus are SWITCHING. I Self refresh curren; C and # a 0; E < 0.2; Oher conrol and address bus inpus are FLOATING; aa bus inpus are FLOATING. Normal I Operaing bank inerleave read curren; A ll bank inerleaving reads; IOUT = 0; BL = 4; CL = CL(I; AL = - 1* ; C(I C (I = ; = ; = ; = 1* ; E is HIGH; CS# is HIGH beween C C(I (I C valid commands; Address bus inpus are STABLE during ESELECTs; aa bus inpus are SWITCHING. I Noe: I specificaion is based on Samsung compone. Oher AM Manufacurers specificaion may be differen. irium Technology, Inc. 002 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 6 OF 10

7 aa Srobe aa Clock PAT NO: Produc Specificaio L470T286A-E6S/S/CCS E: 1 AC Timing Parameers & Specificaio Parameer -E6 - -CC Uni Clock cycle ime CL= CL=4 CL= C ( C 4 ( - -,70 8, C ( ,000 8,000 high-level widh H(AG low-level widh L(AG.48 C.48 C Half clock period P H MIN ( CH, C L MIN ( CH, C L MIN ( CH, C L Clock jier oupu access ime from /# JIT 12 AC aa-ou high impedance window from /# aa-ou low-impedance window from /# HZ AC (MAX AC (MAX AC (MAX LZ AC (MIN AC (MAX AC (MIN AC (MAX AC (MIN AC (MAX and M inpu seup ime relaive o S and M inpu hold ime relaive o S S 00 H and M inpu pulse widh (for each inpu IPW aa hold skew facor HS Q S hold, per access S o firs o go nonvalid, QH HP - QHS HP - QHS HP - QHS aa valid oupu window (W W QH - SQ QH - SQ QH - SQ S inpu high pulse widh QSH S inpu low pulse widh QSL S oupu access ime from/# QS S falling edge o rising seup ime SS S falling edge from rising hold ime SH S skew, per access S o las valid, per group, 40 SQ S read preamble PE S read posamble PST S wrie preamble seup ime WPES S wrie preamble PE S wrie posamble PST. W. 4 W Wrie command o firs S laching raiion QSS L-0.2 W WL+0.2 WL-0.2 WL+0.2 WL-0.2 WL+0.2 irium Technology, Inc. 002 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 7 OF 10 C

8 Power-own OT Self efresh Command and Address PAT NO: Produc Specificaio L470T286A-E6S/S/CCS E: 1 AC Timing Parameers & Specificaio ( con' Parameer -E6 - -CC Uni Address and conrol inpu pulse widh for each inpu Address and conrol inpu seup ime Address and conrol inpu hold ime IPW. 6 IS 00 IH CAS# o CAS# command delay CC ACTIE o ACTIE (same bank command C ACTIE bank a o ACTIE bank b command ACTIE o EA or WITE delay C Four Bank Acivae period 7. FAW ACTIE o PECHAGE command AS 4 70, , ,000 Inernal EA o precharge command delay Wrie recovery ime. TP W Auo precharge wrie recovery + precharge ime AL W+ P W+ P W+ P Inernal WITE o EA command delay T. W PECHAGE command period P LOA MOE command cycle ime M E low o,# uncerainy ELA Y IS + + IH IS + + IH IS + + IH EFESH o Acive or efresh o efresh command inerval 27. FC 1 70, , ,000 Average periodic refresh inerval EFI Exi self refresh o non-ea command SN Exi self refresh o EA S. 8 1 FC(MIN 0 X 00 X us FC(MIN FC(MIN Exi self refresh iming reference I SX IS IS IS OT urn-on delay AON OT urn-on ON A AC(MIN + A C(MAX 700 AC(MIN + A C(MAX AC(MIN + A C(MAX OT urn-off delay OF. A OT urn-off OF A AC(MIN + A C(MAX 600 AC(MIN + A C(MAX 600 AC(MIN + A C(MAX 600 OT urn-on (power-down mode AONP + A C(MIN 2 x + A C(MAX + A C(MIN 2 x + A C(MAX + A C(MIN 2 x + A C(MAX OT urn-off (power-down mode AOFP + A C(MIN 2. x + A C(MAX + A C(MIN 2. x + A C(MAX + A C(MIN 2. x + A C(MAX OT o power-down enry laency ANP OT power-down exi laency AXP Exi acive power-down o EA command, M[bi12=0] X A Exi acive power-down o EA command, M[bi12=1] XAS 7-AL 6-AL 6-AL Exi precharge power-down o any non-ea command. XP E minimum high/low ime E irium Technology, Inc. 002 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 8 OF 10

9 Produc Specificaio L470T286A-E6S/S/CCS E: 1 Package imeio FONT IEW MAX / (2X 80 (2X TYP 6.00 TYP 2. TYP TYP TYP 00 TYP PIN TYP 0.4 TYP 0.60 TYP PIN / BA IEW / PIN TYP PIN TYP 140 TYP ( TYP NOTE: dimesio are in millimeers wih olerance +/- 0.1mm unless oherwise specified. irium Technology, Inc. 002 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 9 OF 10

10 Produc Specificaio L470T286A-E6S/S/CCS E: 1 evision Hisory: ae ev. Page Changes 11/02/09 0 Spec release 08/2/10 1 1,9, Updaed daa irium Technology, Inc. 002 Tomas, ancho Sana Margaria, CA Tel: Fax: PAGE 10 OF 10

Product Specifications

Product Specifications Produc Specificaio L493T2863-E7S/E6S/S E: 2 General Informaion 1GB 128Mx72 2 SAM ECC EGISTEE SO-IMM 2-PIN escripion: Feaures: The L493T2863 is a 128Mx72 ouble aa ae 2 SAM high deiy SO-IMM. This memory