IR Receiver for High Data Rate PCM at 455 khz Description

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1 IR Receiver for High Daa Rae PCM a 455 khz Descripion The is a miniaurized receiver for infrared remoe conrol and IR daa ransmission. PIN diode and preamplifier are assembled on lead frame, he epoxy package is designed as IR filer. The demodulaed oupu signal can direcly be decoded by a microprocessor. The main benefi is he operaion wih high daa raes and long disances Feaures Phoo deecor and preamplifier in one package Inernal Bandfiler for PCM frequency Inernal shielding agains elecrical field disurbance TTL and CMOS compaibiliy Oupu acive low Small size package Special Feaures Daa rae 20 kbi/s Supply volage V Shor seling ime afer power on High envelope duy cycle can be received Enhanced immuniy agains disurbance from energy saving lamps Block Diagram Applicaion Circui Transmier wih TSHFxxxx TSOPxxxx Circui OUT GND R 1 =47Ω C 1 = 4.7 µf R 2 >= 1kΩ µc +V S V O GND R 1 +C 1 recommended o suppress power supply disurbances. R 2 opional for improved pulse forming. V S Inpu PIN 10 kω AGC Band Pass Demodulaor Conrol Circui 3 V S 1 OUT 2 GND 1

2 VISHAY Absolue Maximum Raings T amb = 25 C, unless oherwise specified Parameer Tes condiion Symbol Value Uni Supply Volage Pin 3 V S -0.3 o V Volage a oupu o supply Pin 1 V S - V O -0.3 o V S + V 0.3 Supply Curren Pin 3 I S 5 ma Oupu Volage Pin 1 V O -0.3 o V Oupu Curren Pin 1 I O 15 ma Juncion Temperaure C 100 C Sorage Temperaure Range T sg - 25 o + 85 C Operaing Temperaure Range T amb - 25 o + 85 C Soldering Temperaure 10 s, 1 mm from case T sd 260 C Power Consumpion P o 30 mw Elecrical and Opical Characerisics T amb = 25 C, unless oherwise specified Parameer Tes condiion Symbol Min Typ. Max Uni Supply Curren (Pin 3) Dark ambien I SD ma E v = 40 klx, sunligh I SH 2.3 ma Supply Volage (Pin 3) V S V Transmission Disance λ p = 870 nm, IR Diode TSHF5400, d max 20 m I F = 300 ma λ p = 950 nm, IR Diode TSAL6400, d max 12 m I F = 300 ma Threshold Irradiance λ p = 870 nm, opical es signal of Fig.1 E e min 1.5 mw/m 2 Maximum Irradiance Opical es signal of Fig.1 E e max 30 W/m 2 Oupu Volage Low (Pin 1) 1 kω exernal pull up resisor V QL 100 mv Oupu Volage High (Pin 1) No exernal pull-up resisor V QH V S V Bandpassfiler qualiy Q 10 Ou-Pulse widh olerance Opical es signal of Fig.1, 1.5 mw/m 2 E e 30 W/m 2 po µs don µs Delay ime of oupu pulse Opical es signal of Fig.1, E e > 1.5 mw/m 2 Receiver sar up ime Valid daa afer power on V 50 µs Falling ime Leading edge of oupu pulse f 0.4 µs Rise ime No exernal pull up resisor r 12 µs 1 kω exernal pull up resisor r 1.2 µs Direciviy Angle of half ransmission disance ϕ 1/2 ± 45 deg 2

3 Typical Characerisics (T amb = 25 C unless oherwise specified) E e V Q V QH 50% V QL Opical Tes Signal (f=455khz, 10 cycles/burs) po = pi ı pi =22 s don 15 s po 2.2 s Oupu Signal of f > 48.6 s (min. duy cycle) 90% 10% r jdon, jpo Jier of Oupu Pulse ( s) N=10 cycles/burs Jier po Jier don E e Irradiance (mw/m 2 ) Figure 1. Oupu Funcion Figure 4. Jier of Oupu Pulse Opical Tes Signal (IR diode TSHF5400, p 870 nm, I F = 300 ma, f = 455 khz, 10 cycles/burs) V O E e Oupu Signal of V OH V OL pi =22 s j don jier of leading edge don po j po jier of oupu pulse widh f Frequency ( khz ) Eemin/ Ee rel. Responsiiviy Figure 2. Oupu Fucnion (mi Jier) Figure 5. Frequency Dependence of Responsiviy don, po Oupu Pulse Lengh ( s) Oupu pulse widh po Delay ime don 10 5 N = 10 cycles/burs E e Irradiance (mw/m 2 ) E e min Threshold Irradiance (mw/m 2 ) Correlaion wih ambien ligh sources (Disurbanceeffec):10W/m 2 = 1.4klx (Sand.illum.A,T=2855K) 10W/m 2 = 10klx (Dayligh,T=5900K) E DC Irradiance (W/m 2 ) Figure 3. Oupu Pulse Diagram ( don, po ) Figure 6. Sensiiviy in Brigh Ambien 3

4 VISHAY E e min Threshold Irradiance (mw/m 2 ) Sensiiviy in dark ambien S ( ) rel Relaive Specral Sensiiviy V S Supply Volage ( V ) Wavelengh ( nm ) Figure 7. Sensiiviy vs. Supply Volage Figure 10. Relaive Specral Sensiiviy vs. Wavelengh E e min Relaive Sensiiviy N Burslengh (carriercycles/burs) p2 d rel Relaive Transmission Disance Figure 8. Rel. Sensiiviy vs. Burslengh Figure 11. Direciviy I Supply Curren ( ma ) s V S = 5.5V V S = 2.7V Recommendaion for Suiable Daa Formas The circui of he is designed in ha way ha disurbance signals are idenified and unwaed oupu pulses due o noise or disurbances are avoided. A bandpassfiler, an auomaic gain conrol and an inegraor sage is used o suppress such disurbances. The disinguishing marks beween daa T amb Ambien Temperaure ( C ) Figure 9. Supply Curren vs. Ambien Temperaure 4

5 signal and disurbance are carrier frequency, burs lengh and he envelope duy cycle. The daa signal should fullfill he following condiions: The carrier frequency should be close o 455 khz. The burslengh should be a leas 22 µs (10 cycles of he carrier signal) and shorer han 500 µs. The separaion ime beween wo consecuive burss should be a leas 26 µs. If he daa burss are longer han 500 µs hen he envelope duy cycle is limied o 25 % The duy cycle of he carrier signal (455 khz) may be beween 50 % (1.1 µs pulses) and 10 % (0.2 µs pulses). The lower duy cycle may help o save baery power. 5

6 VISHAY Package Dimensions in mm

7 Ozone Depleing Subsances Policy Saemen I is he policy of Vishay Semiconducor GmbH o 1. Mee all presen and fuure naional and inernaional sauory requiremens. 2. Regularly and coninuously improve he performance of our producs, processes, disribuion and operaingsysems wih respec o heir impac on he healh and safey of our employees and he public, as well as heir impac on he environmen. I is paricular concern o conrol or eliminae releases of hose subsances ino he amosphere which are known as ozone depleing subsances (ODSs). The Monreal Proocol (1987) and is London Amendmens (1990) inend o severely resric he use of ODSs and forbid heir use wihin he nex en years. Various naional and inernaional iniiaives are pressing for an earlier ban on hese subsances. Vishay Semiconducor GmbH has been able o use is policy of coninuous improvemens o eliminae he use of ODSs lised in he following documens. 1. Annex A, B and lis of ransiional subsances of he Monreal Proocol and he London Amendmens respecively 2. Class I and II ozone depleing subsances in he Clean Air Ac Amendmens of 1990 by he Environmenal Proecion Agency (EPA) in he USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (ransiional subsances) respecively. Vishay Semiconducor GmbH can cerify ha our semiconducors are no manufacured wih ozone depleing subsances and do no conain such subsances. We reserve he righ o make changes o improve echnical design and may do so wihou furher noice. Parameers can vary in differen applicaions. All operaing parameers mus be validaed for each cusomer applicaion by he cusomer. Should he buyer use producs for any uninended or unauhorized applicaion, he buyer shall indemnify agains all claims, coss, damages, and expenses, arising ou of, direcly or indirecly, any claim of personal damage, injury or deah associaed wih such uninended or unauhorized use. Vishay Semiconducor GmbH, P.O.B. 3535, D Heilbronn, Germany Telephone: 49 (0) , Fax number: 49 (0)

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