S2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6

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1 Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge. This device is suitable for use in DC-DC conversion,load switch and level shift. Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package SOT-363 DC-DC converter circuit Small Signal Switch Load Switch Level Shift D G S SOT-363 Absolute Maximum ratings S G 3 D Pin configuration (Top view) 3 Parameter Symbol 0 S Unit Drain-Source Voltage V DS +0 Gate-Source Voltage 6 V Continuous Drain Current a T A =5 C I D A Maximum Power Dissipation a T A =5 C P D W Continuous Drain Current b T A =5 C I D A Maximum Power Dissipation b T A =5 C P D W Pulsed Drain Current c I DM.4 A Operating Junction Temperature T J 50 C Lead Temperature T L 60 C Storage Temperature Range T stg -55 to 50 C Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 53W 7 8mm 3000 units

2 Thermal resistance ratings Single Operation Parameter Symbol Typical Maximum Unit Junction-to-Ambient Thermal Resistance a t 0 s R JA Junction-to-Ambient Thermal Resistance b t 0 s C/W R JA Junction-to-Case Thermal Resistance R JC Dual Operation Junction-to-Ambient Thermal Resistance a t 0 s R JA Junction-to-Ambient Thermal Resistance b t 0 s C/W R JA Junction-to-Case Thermal Resistance R JC a b c d Surface mounted on FR4 Board using square inch pad size, oz copper Surface mounted on FR4 board using minimum pad size, oz copper Repetitive rating, pulse width limited by junction temperature, t p =0μs, Duty Cycle=% Repetitive rating, pulse width limited by junction temperature T J =50 C.

3 Electronics Characteristics (Ta=5 o C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS = 0 V, I D = 50uA 0 V Zero Gate Voltage Drain Current I DSS V DS =6 V, = 0V ua Gate-to-source Leakage Current I GSS V DS = 0 V, =±5V ±5 ua ON CHARACTERISTICS Gate Threshold Voltage (TH) = V DS, I D = 50uA V VGS = 4.5V, ID = 0.55A Drain-to-source On-resistance R DS(on) VGS =.5V, ID = 0.45A VGS =.8V, ID = 0.35A Forward Transconductance g FS VDS = 5 V, ID = 0.55A.0 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C ISS 50 = 0 V, f = 00kHz, V DS = Output Capacitance C OSS 3 0 V Reverse Transfer Capacitance 8 C RSS Total Gate Charge Q G(TOT).5 Threshold Gate Charge Q G(TH) = 4.5 V, V DS = 0 V, 0.06 Gate-to-Source Charge Q GS I D = 0.55A 0.5 Gate-to-Drain Charge 0.3 SWITCHING CHARACTERISTICS Q GD Turn-On Delay Time td(on) Rise Time tr V DD =0V, =4.5V, 80 Turn-Off Delay Time td(off) I D =0.55A, R G =6Ω 700 Fall Time tf 380 BODY DIODE CHARACTERISTICS Forward Voltage V SD = 0 V, I S =0.35A V m pf nc ns 3

4 I DS -Drain-to-Source Current (A) Typical Characteristics (Ta=5 oc, unless otherwise noted) 4 3 =.5V ~5.0V =.0V =.5V V DS -Drain-to-Source Voltage(V) I DS -Drain to Source Current(A) V DS =5V T=-50 o C T=5 o C T=5 o C Gate-to-Source Voltage(V) 400 Output characteristics 600 Transfer characteristics R DS(on) - On-Resistance(m) =.8V =.5V =4.5V R DS(on) - On-Resistance (m) R DS(on) - On-Resistance (m) I DS -Drain-to-Source Current(A) On-Resistance vs. Drain current VGS=4.5V, ID=0.55A Temperature( o C) On-Resistance vs. Junction temperature (TH) Gate Threshold Voltage (V) Gate-to-Source Voltage(V) On-Resistance vs. Gate-to-Source voltage Temperature ( o C) Threshold voltage vs. Temperature I D =50uA 4

5 C - Capacitance(pF) =0V F=00kHz Ciss Coss Crss I SD -Source to Drain Current(A) T=50 o C T=5 o C V DS Drain-to-Source Voltage (V) Capacitance V SD -Source-to-Drain Voltage(V) Body diode forward voltage 0 I D - Drain Current (A) Limited by R DS(on) 0 ms 00 ms s 0 s DC T A = 5 C Single Pulse V DS - Drain-to-Source Voltage (V) Safe operating power Normalized Effective Transient Thermal Impedance Duty Cycle = Notes: 0. P DM 0.05 t 0.0 t t. Duty Cycle, D = t. Per Unit Base = R thja = 30 C/W 3. T JM - T A = P DM Z (t) thja Single Pulse 4. Surface Mounted Square Wave Pulse Duration (s) Transient thermal response (Junction-to-Ambient) 5

6 Package outline dimensions SOT-363 Symbol Dimension in Millimeters Min. Max. A A A b c D E E e TYP e L 0.55 REF L o 8 o 6