5SND 0500N HiPak IGBT Module

Transcription

1 Data Sheet, Doc. No. 5SYA SND 5N333 HiPak IGBT Module V CE = 33 V I C = 5 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance 2 switches in one package Maximum rated values ) Parameter Symbol Conditions min max Unit Collector-emitter voltage V CES V GE = V, T vj 25 C 33 V DC collector current I C T C = C, T vj = 5 C 5 A Peak collector current I CM t p = ms A Gate-emitter voltage V GES -2 2 V Total power dissipation P tot T C = 25 C, T vj = 5 C, per switch 48 W DC forward current I F 5 A Peak forward current I FRM t p = ms A Surge current IGBT short circuit SOA I FSM t psc V R = V, T vj = 5 C, t p = ms, half-sinewave V CC = 25 V, V CEM CHIP 33 V V GE 5 V, T vj 5 C 45 A µs Isolation voltage V isol min, f = 5 Hz 6 V Junction temperature T vj 75 C Junction operating temperature T vj(op) -5 5 C Case temperature T C -5 5 C Storage temperature T stg C Mounting torques 2) M t Main terminals, M8 screws 8 M s Base-heatsink, M6 screws 4 6 ) Maximum rated values indicate limits beyond which damage to the device may occur per IEC ) for detailed mounting instructions refer to ABB Document No. 5SYA 239 M t2 Auxiliary terminals, M4 screws 2 3 Nm

2 IGBT characteristic values 3) Parameter Symbol Conditions min typ max Unit Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage V (BR)CES V GE = V, I C = ma, T vj = 25 C 33 V V CE sat I C = 5 A, Collector cut-off current I CES V CE = 33 V, V GE = V T vj = 25 C V T vj = 25 C 3. V T vj = 5 C V T vj = 25 C.3 ma T vj = 25 C ma T vj = 5 C 3 ma Gate leakage current I GES V CE = V, V GE = 2 V, T vj = 25 C -5 5 na Gate-emitter threshold voltage V GE(th) I C = 8 ma, V CE = V GE, T vj = 25 C 5 7 V Gate charge Q G I C = 5 A, V CE = 8 V, V GE = -5 V..5 V 3.7 µc Input capacitance C ies 5 nf Output capacitance C oes V CE = 25 V, V GE = V, f = MHz, T vj = 25 C 4.2 nf Reverse transfer capacitance C res.28 nf Internal gate resistance R Gint per switch.8 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current t d(on) t r t d(off) t f E on E off 3) Characteristic values according to IEC ) Collector-emitter saturation voltage is given at chip level I SC V CC = 8 V, I C = 5 A, V GE = 5 V, V CC = 8 V, I C = 5 A, V GE = 5 V, V CC = 8 V, I C = 5 A, V GE = ±5 V, V CC = 8 V, I C = 5 A, V GE = ±5 V, t psc µs,, V CC = 25 V, V CEM CHIP 33 V T vj = 25 C 38 ns T vj = 25 C 4 ns T vj = 5 C 4 ns T vj = 25 C 35 ns T vj = 25 C 4 ns T vj = 5 C 45 ns T vj = 25 C 25 ns T vj = 25 C 45 ns T vj = 5 C 46 ns T vj = 25 C 255 ns T vj = 25 C 34 ns T vj = 5 C 36 ns T vj = 25 C 66 mj T vj = 25 C 86 mj T vj = 5 C 96 mj T vj = 25 C 62 mj T vj = 25 C 85 mj T vj = 5 C 92 mj T vj = 5 C 27 A 2 5SND 5N333 Doc. No. 5SYA

3 Diode characteristic values 5) Parameter Symbol Conditions min typ max Unit T vj = 25 C 2.5 V Forward voltage 6) V F I F = 5 A T vj = 25 C 2.25 V T vj = 5 C 2.2 V T vj = 25 C 69 A Peak reverse recovery current I RM T vj = 25 C 8 A T vj = 5 C 83 A T vj = 25 C 36 µc Recovered charge Reverse recovery time Q r t rr V CC = 8 V, I F = 5 A, V GE = 5 V, di/dt = 3.8 ka/µs T vj = 25 C 585 µc T vj = 5 C 68 µc T vj = 25 C 93 ns T vj = 25 C 25 ns T vj = 5 C 4 ns T vj = 25 C 4 mj Reverse recovery energy E rec T vj = 25 C 68 mj T vj = 5 C 8 mj 5) Characteristic values according to IEC ) Forward voltage is given at chip level Package properties 7) Parameter Symbol Conditions min typ max Unit IGBT thermal resistance junction to case Diode thermal resistance junction to case IGBT thermal resistance 2) case to heatsink Diode thermal resistance 2) case to heatsink R th(j-c)igbt.26 K/W per switch R th(j-c)diode.5 K/W R th(c-s)igbt IGBT per switch, grease = W/m x K.24 K/W R th(c-s)diode Diode per switch, grease = W/m x K.48 K/W Partial discharge extinction voltage V e f = 5 Hz, Q PD pc (acc. To IEC 6287) 35 V Comparative tracking index CTI 6 Module stray inductance L σ CE per switch 24 nh T C = 25 C.8 Resistance, terminal-chip R CC +EE per switch T C = 25 C.245 T C = 5 C.26 mω 2) For detailed mounting instructions refer to ABB Document No. 5SYA 239 Mechanical properties 7) Parameter Symbol Conditions min typ max Unit Dimensions L x W x H Typical 3 x 6 x 38 mm Clearance distance in air d a according to IEC and EN 524- Term. to base: 9 Term. to term: 9 mm Surface creepage distance d s according to IEC and EN 524- Term. to base: 28.2 Term. to term: 28.2 mm Mass m 85 g 7) Package and mechanical properties according to IEC SND 5N333 Doc. No. 5SYA

4 Electrical configuration E E C2 C2 G G2 C C E2 E2 Outline drawing 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA 239 This is an electrostatic sensitive device, please observe the international standard IEC 6747-, chap. IX. This product has been designed and qualified for Industrial Level. 4 5SND 5N333 Doc. No. 5SYA

5 V CE = V GE C C 5 C C 25 C 25 C V GE in V Fig. Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level 75 9 V 7 V 5 V 3 V 75 9 V 7 V 5 V 3 V 5 5 V V V 9 V T vj = 25 C T vj = 5 C Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level 5 5SND 5N333 Doc. No. 5SYA

6 t d(on), t r, t d(off), t f in µs t d(on), t r, t d(off), t f in µs E on, E off in J E on, E off in J V CC = 8 V R G = 3.9 Ω L σ = 25 nh V CC = 8 V I C = 5 A L σ = 25 nh E on 2 E on E off E off.5 T vj = 25 C T vj = 5 C R G in Ω T vj = 25 C T vj = 5 C Fig. 5 Typical switching energies per pulse vs. collector current Fig. 6 Typical switching energies per pulse vs. gate resistor t f t d(off) t d(off) t d(on) t r t d(on) t f. t r.. V CC = 8 V R G = 3.9 Ω Tvj = 25 C L σ = 25 nh V CC = 8 V I C = 5 A T vj = 25 C L σ = 25 nh R G in Ω Fig. 7 Typical switching times vs. collector current Fig. 8 Typical switching times vs. gate resistor 6 5SND 5N333 Doc. No. 5SYA

7 C in nf V GE in V 2 C ies 5 V GE = V f OSC = MHz V OSC = 5 mv 5 C oes -5 C res V CC = 8 V V CC = 25 V Q g in µc Fig. 9 Typical capacitances vs. collector-emitter voltage Fig. Typical gate charge characteristics 2.5 V CC 25 V, T vj = 5 C, R G = 3.9 Ω 2. I Cpulse / I C chip module Fig. Turn-off safe operating area (RBSOA) 7 5SND 5N333 Doc. No. 5SYA

8 I F in A I R in A E rec in mj, I RM in A, Q r in µc E rec in mj, I RM in A, Q r in µc R G = 6.8 Ω R G = 4.7 Ω R G = 3.9 Ω R G = 3.3 Ω R G = 2.2 Ω R G =.5 Ω R G = 33 Ω R G = 22 Ω R G = 5 Ω R G = Ω T vj = 25 C T vj = 5 C E rec 2 T vj = 25 C T vj = 5 C I RM 8 I RM 6 Q r 8 E rec 6 Q r V CC = 8 V R Gon = 3.9 Ω L = 25 nh V CC = 8 V I F = 5 A L = 25 nh I F in A di/dt in ka/µs Fig. 2 Typical reverse recovery characteristics vs. forward current Fig. 3 Typical reverse recovery characteristics vs. di/dt V CC 25 V di/dt 5 ka/µs T vj = 5 C 5 25 C 25 C 5 5 C V F in V V R in V Fig. 4 Typicial diode forward characteristics chip level Fig. 5 Safe operating area diode (SOA) 8 5SND 5N333 Doc. No. 5SYA

9 5SND 5N333 Doc. No. 5SYA DIODE Z th(j-c) in K/W IGBT, DIODE IGBT. Analytical function for transient thermal impedance: Z th(j-c) Diode Z th(j-c) IGBT Z th (j-c) (t) = n i R i (- e -t/ i ). i R i (K/kW) i (ms) R i (K/kW) i (ms) t in s Fig. 6 Thermal impedance vs. time Related documents: 5SYA 242 Failure rates of HiPak modules due to cosmic rays 5SYA 243 Load cycle capability of HiPaks 5SYA 245 Thermal runaway during blocking 5SYA 253 Applying IGBT 5SYA 258 Surge currents for IGBT diodes 5SYA 293 Thermal design and temperature ratings of IGBT modules 5SYA 298 Paralleling of IGBT modules 5SZK 9 Specification of environmental class for HiPak Storage 5SZK 92 Specification of environmental class for HiPak Transportation 5SZK 93 Specification of environmental class for HiPak Operation (Industry) 5SZK 92 Specification of environmental class for HiPak ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-56 Lenzburg Switzerland We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded. Phone: Fax: abbsem@ch.abb.com Internet: