M63850P/FP. PRELIMINARY Notice: This is not a final specification. MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE

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1 M685P/FP -UNIT DMOS RRY WITH CLMP DIODE DESCRIPTION The M685P/FP is a inverter input power DMOS transistor array that consists of independent output N-channel DMOS transistors. PIN CONFIGURTION COM O 6 5 O IN FETURES circuits of N-channels DMOS High breakdown voltage (DS 8) High-current driving (IDS(max) = ) With clamping diodes Drain-source on-state low resistance (RON =.5) Wide operating temperature range (Ta = to +85 C) IN GND 5 IN 6 NC O 8 Package type DD GND IN O 9 COM 6P(P) 6PN(FP) NC : No connection CIRCUIT DIGRM DD COM PPLICTION Drives of relays and printers, digit drives of indication elements (LEDs and lamps) k.k GND FUNCTION The M685P/FP is consists of independent N-channel DMOS transistors. Each DMOS transistor is connected in a common-source with GND PIN. The clamp diodes for spike killers are connected between the output pin and the COM pin of each DMOS transistor. The maximum of Drain current is. The maximum Drain-Source voltage is 8. The four circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. : Ω BSOLUTE MXIMUM RTINGS (Unless otherwise noted, Ta = ~ +85 C) Conditions DD DS IDS I R IF Pd Topr Tstg Supply voltage Drain-source voltage Drain current Input voltage Clamping diode reverse voltage Clamping diode forward current Power dissipation Operating temperature Storage temperature Output, H Current per circuit output, L, when mounted on board Ratings.5 ~ +8.5 ~ DD 8.(P)/.(FP) ~ ~ +5 W C C pr. 5

2 M685P/FP -UNIT DMOS RRY WITH CLMP DIODE RECOMMENDED OPERTING CONDITIONS (Unless otherwise noted, Ta = ~ +85 C) DD DS Supply voltage Drain-source voltage Conditions IDS Drain current (Current per circuit when circuits are coming on simultaneously) DD = 5, Duty Cycle P : no more than % FP : no more than % DD = 5, Duty Cycle P : no more than 6% FP : no more than 5%.5. IH IL H input voltage L input voltage CC-. CC CC-. ELECTRICL CHRCTERISTICS (Unless otherwise noted, ) Test conditions IDD(ON) On supply current DD = 5.5, I =, circuit only IDD(OFF) Off supply current DD = 5.5, I = 5.5 IO(LEK) Output leak current DD = 5.5, I = 5.5, DS = 8 ON Output on voltage I =.5, IDS =. I =.5, IDS = RON Output on resistance I =.5, IDS =.5..5 Ω IIH H input current DD = 5.5, I = 5.5 IIL L input current DD = 5.5, I = IR Clamping diode reverse current R = 8 F Clamping diode forward voltage IF =.5.. SWITCHING CHRCTERISTICS (Unless otherwise noted, ) Test conditions Turn-on time Turn-off time CL = 5pF (Note ) 5 5 ns ns Note : TEST CIRCUIT TIMING DIGRM DD O PG Measured device OPEN RL 5% 5% 5Ω CL 5% 5% ()Pulse generator (PG) characteristics : PRR = khz, tw = µs, tr = 6ns, tf = 6ns, Zo = 5Ω, IH = 5 ()Input-output conditions : RL = 8.Ω, o =, DD =.5 ()Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes. pr. 5

3 M685P/FP -UNIT DMOS RRY WITH CLMP DIODE TYPICL CHRCTERISTICS. Thermal Derating Factor 6 DD = 5 Input Power dissipation Pd (W) M685P M685FP mbient temperature Ta ( C) Input current II () 8 Ta = C 5 Input voltage DD - I () Duty Cycle - Drain Current (M685P)...5 Duty Cycle - Drain Current (M685P). Repeated frequency Hz, DD = 5 represent the current per.5 Repeated frequency Hz the value of the simultaneously-operated, DD = Duty cycle (%) Duty cycle (%) Duty Cycle - Drain Current (M685FP). Repeated frequency Hz, DD = 5..5 Duty Cycle - Drain Current (M685FP). Repeated frequency Hz, DD = Duty cycle (%) Duty cycle (%) pr. 5

4 M685P/FP -UNIT DMOS RRY WITH CLMP DIODE..8. DD = 5 DS = Input oltage - Drain Current Ta = C 5 5 On-state supply current IDD(ON) () 6 8 Supply oltage - On Supply Current I =.5 One circuit only Ta = C Input voltage I () Supply voltage DD ()..8. Output On oltage - Drain Current DD =.5 I =.5 Ta = C 6 8 Output On oltage - Drain Current DD =.5 I =.5 Ta = C Output on voltage ON () Output on voltage ON () Clamping diode forward current IF ()..8. Clamping Diode Ta = C..8. Switching time (nsec) Switching Clamping diode forward voltage F () Drain current IDS (m) pr. 5

5 M685P/FP -UNIT DMOS RRY WITH CLMP DIODE Drain-source on-state resistance RON (Ω) Drain Current - Output On Resistance Output On Resistance - mbient Temperature. DD = cc =.5 cc = 5.5 cc = Drain-source on-state resistance RON (Ω) Drain current IDS (m) mbient temperature Ta ( C) pr. 5