M54534P/FP MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE

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1 MITSUBISI SEMICONDUCTOR <TRANSISTOR ARRAY> MP/FP -UNIT 2 TRANSISTOR ARRAY WIT CAMP DIODE AND STROBE DESCRIPTION MP and MFP are six-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION (TOP IEW) STROBE 1 1 CC IN1 2 1 O1 IN2 1 O2 FEATURES Medium breakdown voltage (BCEO 2) igh-current driving (Ic(max) =2) With clamping diodes IN IN IN IN GND 1 O 12 O 11 O 1 O 9 COM COMMON Wide input voltage range (I = 2 to +2) Wide operating temperature range (Ta = 2 to + C) With strobe input 1P(P) Outline 1P2N-A(FP) CIRCUIT SCEMATIC (EAC CIRCUIT) APPICATION Drives of relays and printers, digit drives of indication elements (EDs and lamps). CC COM 1.k FUNCTION The MP and MFP each have six circuits consisting of NPN transistors. Each input has a diode and 1.kΩ esistor in series. Each input is connected, and each output is connected spike-killer clamping diode, emitters of each transistor is connected to GND (pin ), strobe input is connected to (pin 1), clamping diode is connected COM pin (pin 9) and CC is connected to the pin 1 in common. The collector current is 2 maximum. Collector-emitter supply voltage is 2 maximum. MFP is enclosed in a molded small flat package, enabling space-saving design. STROBE 2k 2k GND The six circuits share the, COM, CC, GND. The diodes shown by broken line are parasite diodes and must not be use. : Ω ABSOUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = 2 ~ + C) Conditions Ratings CC CEO IC I () IF R Pd Topr Tstg Supply voltage Collector-emitter voltage Collector current Input voltage Strobe input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Output, Current per circuit output, Ta = 2 C, when mounted on board 1. ~ ~ +2.~ /1. 2 ~ + ~ +12 W C C

2 MITSUBISI SEMICONDUCTOR <TRANSISTOR ARRAY> MP/FP -UNIT 2 TRANSISTOR ARRAY WIT CAMP DIODE AND STROBE FUNCTIONA TABE IN OUT RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = 2 ~ + C) CC O Supply voltage Output voltage imits min typ max 2 CC =., Duty Cycle IC Collector current P : no more than 2% FP : no more than 1% Per channel CC =., Duty Cycle P : no more than % FP : no more than % 1 I Input voltage.2 1 I Input voltage. I() Input voltage (strobe input) 2. 1 I() Input voltage (strobe input).2 EECTRICA CARACTERISTICS (Unless otherwise noted, Ta = 2 ~ + C) II (BR) CEO CE (sat) IIR II() IR() F IR ICC hfe Collector-emitter breakdown voltage Collector-emitter saturation voltage CC =, I =.2, I() =.2, ICEO = 1 I =.2 I() = 2. Test conditions CC =., IC = 2 CC =, IC = 12 Input current CC =, I =.2, I() = 2. Input reverse current CC =, I = 2 Strobe input current CC =, I =.2 (all input), I() =.2 Strobe input reverse current CC =, I =, I() = 2 Clamping diode forward voltage IF = 2 Clamping diode reverse current R = 2 Supply current CC =, I =.2 (all input), I() = 2. CE =, CC =., IC =, Ta = 2 C, DC amplification factor I() = 2. imits min typ + max : The typical values are those measured under ambient temperature (Ta) of 2 C. There is no guarantee that these values are obtained under any conditions. SWITCING CARACTERISTICS (Unless otherwise noted, Ta = 2 C) ton toff Turn-on time Turn-off time C = 1pF (note 1) Test conditions imits min typ max ns ns

3 MITSUBISI SEMICONDUCTOR <TRANSISTOR ARRAY> MP/FP -UNIT 2 TRANSISTOR ARRAY WIT CAMP DIODE AND STROBE NOTE 1 TEST CIRCUIT TIMING DIAGRAM CC O PG Ω Measured device OPEN R C % % % % ton toff (1) Pulse generator (PG) characteristics : PRR = 1kz, tw = 1µs, tr = ns, tf = ns, ZO = Ω P =.2P-P (2) Input-output conditions : R = Ω, O = 1, CC = =. () Electrostatic capacity C includes floating capacitance at connections and input capacitance at probes TYPICA CARACTERISTICS 2. Thermal Derating Factor Characteristics Output Saturation oltage Collector Current Characteristics Power dissipation Pd (W) 1. MFP 1.. MP 2 1 I =.2 CC = = 2. Ta = C Ta = 2 C Ta = 2 C Ambient temperature Ta ( C) Output saturation voltage CE (sat) () (MP) (MP) 2 1 Repeated frequency 1z Ta = 2 C, CC = ~ 2 1 Repeated frequency 1z Ta = C, CC = ,2

4 MITSUBISI SEMICONDUCTOR <TRANSISTOR ARRAY> MP/FP -UNIT 2 TRANSISTOR ARRAY WIT CAMP DIODE AND STROBE (MFP) (MFP) 2 1 1, Repeated frequency 1z Repeated frequency 1z Ta = 2 C, CC =. Ta = C, CC = DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics DC amplification factor hfe CC =., I() = 2. CE = Ta = C Ta = 2 C Ta = 2 C CC =., I() = 2. CE = Ta = C Ta = 2 C Ta = 2 C 1 2 Input voltage I () 1 Input Characteristics Supply Current Characteristics (common) 2 Input current II () 2 CC = = 2. Ta = C Ta = 2 C Ta = 2 C Supply current ICC () 1 1 = 2. I =.2 Ta = C Ta = 2 C Ta = 2 C Input voltage I () 2 1 Supply voltage CC ()

5 MITSUBISI SEMICONDUCTOR <TRANSISTOR ARRAY> MP/FP -UNIT 2 TRANSISTOR ARRAY WIT CAMP DIODE AND STROBE Clamping Diode Characteristics Forward bias current IF () 2 1 Ta = C Ta = 2 C Ta = 2 C Forward bias voltage F ()