M63815P/FP/KP PRELIMINARY MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
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1 MP/FP/KP -UNIT TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION MP/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION IN IN IN O O O IN IN O O FEATURES Three package configurations (P, FP, and KP) Medium breakdown voltage (BCEO ) Synchronizing current (IC(max) = ) With clamping diodes With zener diodes Low output saturation voltage Wide operating temperature range (Ta = to + C) IN O IN O IN O GND 9 COM COMMOM Package type PG(P) NC NC IN 9 O IN O APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals IN IN IN IN O O O O IN O IN 9 O FUNCTION The MP/FP/KP each have eight circuits consisting of NPN transistor. A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The transistor emitters are all connected to the GND pin. The transistors allow synchronous flow of collector current. A maximum of voltage can be applied between the collector and emitter. GND CIRCUIT DIAGRAM COM COMMOM PN-A(FP) Package type PE-A(KP) NC : No connection COM z=.k K GND The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. : Ω Jan.
2 MP/FP/KP -UNIT TRANSISTOR ARRAY WITH CLAMP DIODE ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = ~ + C) Conditions Ratings CEO IC I IF R Pd Topr Tstg Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Output, H Current per circuit output, L Ta = C, when mounted on board MP MFP MKP. ~ +. ~ ~ + ~ + W C C RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = ~ + C) O IC IN Output voltage Collector current (Current per circuit when circuits are coming on simultaneously) Input voltage MP MFP MKP Duty Cycle no more than % Duty Cycle no more than % Duty Cycle no more than % Duty Cycle no more than % Duty Cycle no more than % Duty Cycle no more than % ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = C) (BR) CEO Collector-emitter breakdown voltage ICEO = µa CE(sat) IN(on) F IR hfe Collector-emitter saturation voltage On input voltage Clamping diode forward volltage Clamping diode reverse current DC amplification factor IIN =, IC = IIN =, IC = IIN =, IC = IF = R = CE =, IC = µa SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = C) ton toff Turn-on time Turn-off time CL = pf (note ) ns ns Jan.
3 MP/FP/KP -UNIT TRANSISTOR ARRAY WITH CLAMP DIODE NOTE TEST CIRCUIT TIMING DIAGRAM o PG Measured device OPEN RL % % Ω CL % % ton toff ()Pulse generator (PG) characteristics : PRR = khz, tw = µs, tr = ns, tf = ns, Zo = Ω, IH = ()Input-output conditions : RL = Ω, o = ()Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics. MP Input Characteristics Power dissipation Pd (W)... MFP MKP.9.. Input current II () Ta = C Ta = C Ta = C Ambient temperature Ta ( C) Input voltage I () (MP) (MP) Repeated frequency Hz Ta = C ~ Repeated frequency Hz Ta = C ~ Jan.
4 MP/FP/KP -UNIT TRANSISTOR ARRAY WITH CLAMP DIODE (MFP) (MFP) Repeated frequency Hz Ta = C ~ Repeated frequency Hz Ta = C (MKP) (MKP) Repeated frequency Hz Ta = C ~ Repeated frequency Hz Ta = C Output Saturation oltage Ta = C IB = IB = IB =. IB = IB =. Output Saturation oltage Ta = C I = I = I = I = I = I = Output saturation voltage CE(sat) () Output saturation voltage CE(sat) () Jan.
5 MP/FP/KP -UNIT TRANSISTOR ARRAY WITH CLAMP DIODE Output Saturation oltage II = Ta = C Ta = C Ta = C DC amplification factor hfe DC Amplification Factor CE Ta = C.... Output saturation voltage CE(sat) () Grounded Emitter Transfer Characteristics CE = Grounded Emitter Transfer Characteristics CE = Ta = C Ta = C Ta = C Ta = C Ta = C Ta = C Input voltage I () Input voltage I () Clamping Diode Characteristics Forward bisa current IF () Ta = C Ta = C Ta = C..... Forward bias voltage F () Jan.
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