INPUT CIRCUIT DIAGRAM. Output, H Output current

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1 MWP UNIT DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION MWP is an eightcircuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform highcurrent driving with extremely low inputcurrent supply. PIN CONFIGURATION IN1 1 1 O1 FEATURES High breakdown voltage (BCEO > ) Highcurrent driving (Ic() = ) With clamping diodes Driving available with PMOS IC output APPLICATIONS Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between microcomputer output and highcurrent or highvoltage systems IN IN IN IN IN6 IN IN GND O O O O O6 O O COM COMMON FUNCTION The MWP each have eight circuits consisting of NPN Darlington transistors. This ICs have resistance of kω between input transistor bases and input pins. A spikekiller clamping diode is provided between each output pin (collector) and COM pin. The output transistor emitters are all connected to the GND pin (pin 9). The collector current is imum. Collectoremitter supply voltage is imum. Package type 1PX CIRCUIT DIAGRAM K COM K K GND The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. :Ω ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = ~ + ) Conditions CEO Collectoremitter voltage Output, H IC Output current Current per circuit output, L I Input voltage IF Clamping diode forward current R Clamping diode reverse voltage Pd Power dissipation Ta =, when mounted on board Topr Operating temperature Tstg Storage temperature Ratings. ~ +. ~ ~ + ~ +1 W Jul11

2 MWP UNIT DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING (Unless otherwise noted, Ta = ~ + ) O IC IH IL Output voltage Collector current (Current per 1 circuit when circuits are cog on simultaneously) H input voltage L input voltage Duty Cycle no more than % Duty Cycle no more than % IC < IC < typ. ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = ~+ ) II F IR (BR)CEO CE(sat) hfe Collectoremitter breakdown voltage Collectoremitter saturation voltage Input current Clamping diode forward voltage Clamping diode reverse current DC amplification factor ICEO = 1μA I =, IC = I =, IC = I = 1 IF = R = Test conditions CE =, IC =, Ta =. 1 typ* *:The typical values are those measured under ambient temperature (Ta) of. There is no guarantee that these values are obtained under any conditions μa SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = ) ton toff Turnon time Turnoff time Test conditions CL = 1pF(note 1) typ 9 ns ns NOTE 1 TEST CIRCUIT TIMING DIAGRAM O PG Measured device OPEN RL % % Ω CL % % ton toff (1) Pulse generator (PG) characteristics: PRR = 1kHz, tw = 1μs, tr = 6ns, tf = 6ns, ZO = Ω,I N= to () Inputoutput conditions : RL = Ω, O = 1 () Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jul11

3 MWP UNIT DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics. MWP Output Saturation oltage Collector Current Characteristics I= Power dissipation Pd(W) Collector current IC() 1 Ta= Ta= Ta= Ambient temperature Ta( ) Collector saturation voltage CE(sat)() DutyCycle Collector current Characteristics DutyCycle Collector current Characteristics Collector current IO() 1 6 The collector current values represent the current per circuit. 1 Repeated frequency 1Hz The value in the circle represents the value of the simultaneouslyoperated circuit. Ta = 6 1 Collector current IO() The collector current values 1 represent the current per circuit. Repeated frequency 1Hz 6 The value in the circle represents the value of the simultaneouslyoperated circuit. Ta = Duty cycle (%) Duty cycle (%) DC amplification factor hfe DC Amplification Factor Collector Current Characteristics CE= Ta= Ta= Ta= Collector current IO() Grounded Emitter Transfer Characteristics CE= Ta= Ta= Ta= Collector current IC() Input voltage I() Jul11

4 MWP UNIT DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Input Characteristics Clamping Diode Characteristics. Input current II() Ta= Ta= Ta= Forward bias current IF () 1 Ta= Ta= Ta= 1 1 Input voltage I() Forward bias voltage F () Jul11

5 MWP UNIT DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE PACKAGE OUTLINE Jul11