POWEREX M63812P/FP/GP/KP MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

Transcription

1 M8P/FP/GP/KP -UNIT TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M8P, M8FP, M8GP and M8KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION IN IN O IN O O IN O IN O IN IN O O FEATURES Four package configurations (P, FP, GP and KP) Medium breakdown voltage (BCEO ) Synchronizing current (IC(max) = ) With clamping diodes With zener diodes Low output saturation voltage Wide operating temperature range (Ta= to +8 C) GND Package type CIRCUIT DIAGRAM 8 9 P(P) PN-A(FP) PS-A(GP) PZ-A(KP) COM COMMOM COM APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals z=.k k GND The seven circuits share the COM and GND. FUNCTION The M8P, M8FP, M8GP and M8KP each have seven circuits consisting of NPN transistor.a spikekiller clamping diode is provided between each output pin (collector) and COM pin (pin9). The transistor emitters are all connected to the GND pin (pin 8). The transistors allow synchronous flow of collector current. A maximum of voltage can be applied between the collector and emitter. The diode, indicated with the dotted line, is parasitic, and cannot be used. : Ω ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = ~ +8 C) Conditions Ratings CEO IC I IF R Pd Topr Tstg Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Output, H Current per circuit output, L Ta = C, when mounted on board M8P M8FP M8GP M8KP. ~ +. ~ ~ +8 ~ + W C C Jan.

2 M8P/FP/GP/KP -UNIT TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = ~ +8 C) O IC IN Output voltage Collector current (Current per circuit when circuits are coming on simultaneously) Input voltage M8P M8FP M8GP M8KP Duty Cycle no more than % Duty Cycle no more than % Duty Cycle no more than % Duty Cycle no more than % Duty Cycle no more than % Duty Cycle no more than % Duty Cycle no more than % Duty Cycle no more than % ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = C) (BR) CEO CE(sat) IN(on) R IR hfe Collector-emitter breakdown voltage Collector-emitter saturation voltage On input voltage Clamping diode forward volltage Clamping diode reverse current DC amplification factor ICEO = µa IIN =, IC = IIN =, IC = IIN =, IC = IF = R = CE =, IC = µa SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = C) ton toff Turn-on time Turn-off time CL = pf (note ) ns ns NOTE TEST CIRCUIT TIMING DIAGRAM o PG Measured device OPEN RL % % Ω CL % % ton toff ()Pulse generator (PG) characteristics : PRR = khz, tw = µs, tr = ns, tf = ns, Zo = Ω, IH = 8 ()Input-output conditions : RL=Ω,o= ()Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan.

3 M8P/FP/GP/KP -UNIT TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics. Input Characteristics Power dissipation Pd (W) M8P. M8FP. M8GP M8KP Input current II () Ta = C Ta= = C Ta=8 C 8 Ambient temperature Ta ( C) Input voltage I () (M8P) (M8P) Repeated frequency Hz Ta = C 8 ~ Repeated frequency Hz Ta = 8 C 8 ~ (M8FP) (M8FP) Repeated frequency Hz Ta = C ~ Repeated frequency Hz Ta = 8 C 8 8 Jan.

4 M8P/FP/GP/KP -UNIT TRANSISTOR ARRAY WITH CLAMP DIODE Duty Cycle-Collector Characteristics (M8GP/KP) Duty Cycle-Collector Characteristics (M8GP/KP) Repeated frequency Hz Ta = C 8 ~ Repeated frequency Hz Ta = 8 C 8 Output Saturation oltage Ta = C IB = IB = IB =. IB = IB =. 8 Output Saturation oltage Ta = C I = I = 8 I = I = I = I = Output saturation voltage CE(sat) () Output saturation voltage CE(sat) () 8 Output Saturation oltage II = Ta = C Ta = C Ta = 8 C DC amplification factor hfe DC Amplification Factor CE Ta = C.... Output saturation voltage CE(sat) () Jan.

5 M8P/FP/GP/KP -UNIT TRANSISTOR ARRAY WITH CLAMP DIODE Grounded Emitter Transfer Characteristics CE = Grounded Emitter Transfer Characteristics CE = Ta = C Ta = 8 C Ta = C Ta = 8 C Ta = C Ta = C 8 8 Input voltage I () Input voltage I () Clamping Diode Characteristics Forward bisa current IF () Ta = 8 C Ta = C Ta = C Forward bias voltage F () Jan.