SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS
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1 SLRSB DECEMBER REVISED SEPTEMBER HIGH-VOLTAGE HIGH-CURRENT -ma Rated Collector Current (Single ) High-Voltage s... V Clamp Diodes Inputs Compatible With Various Types of Logic Relay Driver Applications Higher-Voltage Versions of ULNA and ULNA, for Commercial Temperature Range description D OR N PACKAGE (TOP VIEW) B B B B B B B E 8 C C C C C C C COM The SN8 and SN are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven npn Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The collector-current rating of each Darlington pair is ma. The Darlington pairs may be paralleled for higher current capability. Applications include relay drivers, hammer drivers, lamp drivers, display drivers (LED and gas discharge), line drivers, and logic buffers. The SN8 has a -Ω series base resistor for each Darlington pair for operation directly with TTL or -V CMOS. The SN has a.-kω series base resistor to allow its operation directly with CMOS or PMOS that use supply voltages of to V. The required input current is below that of the SN8. logic symbol logic diagram B B B B B B B CLAMP COM C C C C C C C B B B B COM C C C C This symbol is in accordance with ANSI/IEEE Std-8 and IEC publication -. B C B C B C PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright, Texas Instruments Incorporated POST OFFE BOX DALLAS, TEXAS
2 SLRSB DECEMBER REVISED SEPTEMBER schematic (each Darlington pair) B SN8: RB =. kω SN: RB =. kω RB COM C. kω kω E All resistor values shown are nominal. absolute maximum ratings at C free-air temperature (unless otherwise noted) NOTE : Collector-emitter voltage, V CE V Input voltage, V I (see Note ) V Peak collector current (see Figures and ) ma clamp current, I OK ma Total emitter-terminal current A Continuous total power dissipation See Dissipation Rating Table Operating free-air temperature range, T A C to C Storage temperature range, T stg C to C Lead temperature, mm (/ inch) from case for seconds C All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted. PACKAGE DISSIPATION RATING TABLE TA C POWER RATING DERATING FACTOR ABOVE TA = C TA = C POWER RATING D mw. mw/ C 8 mw N mw. mw/ C mw POST OFFE BOX DALLAS, TEXAS
3 electrical characteristics, T A = C (unless otherwise noted) PARAMETER TEST FIGURE VI(on) On-state input voltage =V Collector-emitter (sat) saturation voltage VF EX Clamp-diode forward voltage Collector cutoff current = V, II(off) Off-state input current TA = C SLRSB DECEMBER REVISED SEPTEMBER TEST CONDITIONS SN8 SN MIN TYP MAX MIN TYP MAX = ma = ma. = ma. = ma = ma = ma 8 II = µa, = ma.... II = µa, = ma.. V II = µa, = ma IF = ma.. V = V, II = UNIT = V, II = µa TA = C VI = V = µa,, VI =.8 V.. µa II Input current VI = V.. ma IR Clamp-diode reverse current VI = V. VR = V VR = V, TA = C Ci Input capacitance VI =, f = MHz pf V µa switching characteristics, T A = C free-air temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tplh Propagation delay time, low-to-high-level output VS S = V, RL = Ω, CL L = pf,. µs tphl Propagation delay time, high-to-low-level output See Figure. µs VOH High-level output voltage after switching VS = V, IO ma, See Figure VS mv POST OFFE BOX DALLAS, TEXAS
4 SLRSB DECEMBER REVISED SEPTEMBER PARAMETER MEASUREMENT INFORMATION EX EX VI Figure. I CEX Figure. I CEX II(off) II(on) VI Figure. I I(off) Figure. I I hfe = I C II VI(on) II NOTE: II is fixed for measuring (sat), variable for measuring hfe. Figure. V I(on) Figure. h FE, V CE(sat) VR IR VF IF Figure. I R Figure 8. V F POST OFFE BOX DALLAS, TEXAS
5 PARAMETER MEASUREMENT INFORMATION Input VS = V SLRSB DECEMBER REVISED SEPTEMBER Pulse Generator (see Note A) RL = Ω CL = pf (see Note B) Input ns % % % % % %. µs tphl tplh % TEST CIRCUIT ns VOLTAGE WAVEFORMS % Figure. Test Circuit and Voltage Waveforms VIH (see Note C) V VOH VOL VS Input N mh Pulse Generator (see Note A) Ω CL = pf (see Note B) TEST CIRCUIT Input ns % %. V. V % % µs VOLTAGE WAVEFORMS ns Figure. Latch-Up Test Circuit and Voltage Waveforms VIH (see Note C) V VOH VOL NOTES: A. The pulse generator has the following characteristics: PRR =. khz, ZO = Ω. B. CL includes probe and jig capacitance. C. For testing the 8, VIH = V; for the, VIH = 8 V. POST OFFE BOX DALLAS, TEXAS
6 SLRSB DECEMBER REVISED SEPTEMBER TYPAL CHARACTERISTS COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR CURRENT (ONE DARLINGTON) COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR CURRENT (TWO DARLINGTONS PARALLELED) (sat) Collector-Emitter Saturation Voltage V TA = C II = ma II = ma II = ma 8 (sat) V Collector-Emitter Saturation Voltage V TA = C II = ma II = ma II = ma 8 Collector Current ma (tot) Total Collector Current ma Figure Figure COLLECTOR CURRENT INPUT CURRENT RL = Ω TA = C Collector Current ma VS = V VS = 8 V II Input Current ma Figure POST OFFE BOX DALLAS, TEXAS
7 SLRSB DECEMBER REVISED SEPTEMBER Maximum Collector Current ma N = N = N = D PACKAGE MAXIMUM COLLECTOR CURRENT DUTY CYCLE N = N = TA = C N = Number of s Conducting Simultaneously N = 8 Duty Cycle % THERMAL INFORMATION N = Maximum Collector Current ma N = N = N = N PACKAGE MAXIMUM COLLECTOR CURRENT DUTY CYCLE TA = C N = Number of s Conducting Simultaneously Duty Cycle % Figure Figure N = N = 8 N = N = POST OFFE BOX DALLAS, TEXAS
8 SLRSB DECEMBER REVISED SEPTEMBER APPLATION INFORMATION VCC SN8 +V VDD SN +V TTL 8 Lamp Test CMOS 8 Figure. TTL to Load Figure. Buffer for Higher Current Loads VCC SN8 +V RP 8 TTL Figure 8. Use of Pullup Resistors to Increase Drive Current 8 POST OFFE BOX DALLAS, TEXAS
9 IMPORTANT NOTE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLATIONS USING SEMONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE ( CRITAL APPLATIONS ). TI SEMONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVES OR SYSTEMS OR OTHER CRITAL APPLATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER S RISK. In order to minimize risks associated with the customer s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI s publication of information regarding any third party s products or services does not constitute TI s approval, warranty or endorsement thereof. Copyright 8, Texas Instruments Incorporated
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