SN75446, SN75447 DUAL PERIPHERAL DRIVERS
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- Phyllis Patterson
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1 , DUA PERIPERA DRIVER R00A DECEMBER 98 REVIED NOVEMBER 99 Very ow Power Requirements Very ow Input Current Characterized for Use to 0 ma No atch-up at (After Conducting 00 ma) igh-voltage s ( Min) Clamp Diodes for Transient uppression (0 ma, ) TT- or MO-Compatible Diode-Clamped Inputs tandard upply Voltage uitable for ammer-driver Applications description The and dual peripheral drivers are designed for use in systems that require high current, high voltage, and fast switching times. The and provide AND and NAND drivers, respectively. These devices have diode-clamped inputs as well as high-current, high-voltage inductive-clamp diodes on the outputs. The and drivers are characterized for operation from 0 C to 0 C. A Y D OR P PACKAGE (TOP VIEW) 4 8 Function Tables (each AND driver) INPUT A V CC A Y OUTPUT Y (each NAND driver) INPUT A OUTPUT Y = high level, = low level = irrelevant schematics of inputs and outputs VCC EQUIVAENT OF EAC INPUT TYPICA OF A OUTPUT Input PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright 99, Texas Instruments Incorporated POT OFFICE BO 0 DAA, TEA
2 , DUA PERIPERA DRIVER R00A DECEMBER 98 REVIED NOVEMBER 99 logic symbols logic diagrams (positive logic) A & Y A Y A Y A Y 4 Positive ogic: Y = A or A+ A & Y A Y A Y A Y 4 This symbol is in accordance with ANI/IEEE td and IEC publication -. Positive ogic: Y = A or A+ absolute maximum ratings over operating free-air temperature range (unless otherwise noted) upply voltage, V CC (see Note ) V Input voltage, V I V current, I O (see Note ) ma clamp-diode current ma Continuous total power dissipation ee Dissipation Rating Table Operating free-air temperature range, T A C to 0 C torage temperature range, T stg C to 0 C ead temperature, mm (/ inch) from case for 0 seconds C tresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE:. Voltage values are with respect to network.. Both halves of this dual circuit may conduct rated current simultaneously; however, power dissipation averaged over a short time interval must fall within the continuous dissipation ratings. PACKAGE DIIPATION RATING TABE TA C DERATING FACTOR TA = 0 C POWER RATING ABOVE TA = C POWER RATING D mw.8 mw/ C 44 mw P 000 mw 8.0 mw/ C 40 mw POT OFFICE BO 0 DAA, TEA
3 , DUA PERIPERA DRIVER R00A DECEMBER 98 REVIED NOVEMBER 99 recommended operating conditions MIN NOM MA UNIT upply voltage, VCC 4.. V igh-level input voltage, VI V ow-level input voltage, VI 0.8 V Operating free-air temperature range, TA 0 0 C electrical characteristics over recommended operating free-air temperature range PARAMETER TET CONDITION MIN TYP MA UNIT VIK Input clamp voltage II = ma 0.9. V IO = 00 ma VCC = 4. V, IO = 00 ma VO ow-level output voltage VI =V V, V IO = 00 ma VI = 0.8 V IO = 0 ma VO(BR) breakdown voltage VCC = 4. V, IO = 00 µa 0 0 VR(K) clamp-diode reverse voltage VCC = 4. V, IR = 00 µa 0 0 VF(K) clamp-diode forward voltage VCC = 4. V, IF = 0 ma 0... V IO igh-level output current VCC = 4. V, VI = V, VI = 0.8 V, VO = 00 µa II igh-level input current VCC =. V, VI =. V µa II ow-level input current A input 0. 0 VCC =. V, VI =08V 0.8 input 0 µa ICC upply current, outputs high VI = V 8 VCC =. V VI = 0 8 ma ICC upply current, outputs low VI = 0 8 VCC =. V VI = V 8 ma All typical values are at VCC = V, TA = C. switching characteristics, V CC = V, T A = C PARAMETER TET CONDITION MIN TYP MA UNIT tp Propagation delay time, low-to-high-level output 00 0 ns tp Propagation delay time, high-to-low-level output C = pf, R = 00 Ω, ns tt Transition time, low-to-high-level output ee Figure 0 00 ns tt Transition time, high-to-low-level output 0 00 ns VO igh-level output voltage after switching V = V, IO O 00 ma, ee Figure V V POT OFFICE BO 0 DAA, TEA
4 , DUA PERIPERA DRIVER R00A DECEMBER 98 REVIED NOVEMBER 99 PARAMETER MEAUREMENT INFORMATION Input.4 V VCC R = 00 Ω Pulse Generator (see Note A) A/ /A Circuit Under Test C = pf (see Note B) 0.4 V TET CIRCUIT Open ns 0 ns V. V. V Input. V. V 0. V 0. V µs ns 0 ns V. V. V Input. V. V 0. V 0. V tp tp VO 90% 90% 0% 0% 0% 0% tt VOTAGE WAVEFORM NOTE: A. The pulse generator has the following characteristics: PRR = 00 kz, ZO = 0 Ω. B. C includes probe and jig capacitance. tt Figure. Test Circuit and Voltage Waveforms, witching Characteristics VO 4 POT OFFICE BO 0 DAA, TEA
5 , DUA PERIPERA DRIVER PARAMETER MEAUREMENT INFORMATION R00A DECEMBER 98 REVIED NOVEMBER 99 V = V Input.4 V V m 80 Ω Pulse Generator (see Note A) A Circuit Under Test C = pf (see Note B) 0.4 V TET CIRCUIT Input Input 90%. V ns 0% ns 40 µs 0 % 0 ns 90%. V 90% 90%. V. V 0% 0% 0 ns V V VO VOTAGE WAVEFORM VO NOTE: A. The pulse generator has the following characteristics: PRR =. kz, ZO = 0 Ω. B. C includes probe and jig capacitance. Figure. atch-up Test Circuit and Voltage Waveforms POT OFFICE BO 0 DAA, TEA
6 POT OFFICE BO 0 DAA, TEA
7 IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in accordance with TI s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. pecific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage ( Critical Applications ). TI EMICONDUCTOR PRODUCT ARE NOT DEIGNED, INTENDED, AUTORIZED, OR WARRANTED TO BE UITABE FOR UE IN IFE-UPPORT APPICATION, DEVICE OR YTEM OR OTER CRITICA APPICATION. Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI products in such applications requires the written approval of an appropriate TI officer. Questions concerning potential risk applications should be directed to TI through a local C sales office. In order to minimize risks associated with the customer s applications, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor does TI warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. Copyright 99, Texas Instruments Incorporated
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More informationEN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.
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