HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS ILN2004 TECHNICAL DATA LOGIC SYMBOL LOGIC DIAGRAM

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1 TECHNICAL DATA HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS ILN2004 The ILN2004 are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven n-p-n Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The collector-current rating of a single Darlington pair is 500 ma. The Darlington pairs may be paralleled for higher current capability. Applications include relay drivers, hammer drivers, lamp drivers, display drivers (LED and gas discharge), line drivers, and logic buffers. The ILN2004 has a 10.5kΩ Darlington pair for operation directly with 6-15V CMOS devices. 500-mA Rated Collector Current (Single Output) High-Voltage Outputs V Output Clamp Diodes Inputs Compatible With Various Types of Logic Relay Driver Applications ORDERING INFORMATION ILN2004N Plastic ILN2004D SOIC T A = -40C to 85 C for all packages LOGIC SYMBOL LOGIC DIAGRAM SCHEMATICS (each Darlington Pair) ILN2004: R B = 10.5 kω All resistor values shown are nominal. Absolute maximum ratings at 25 C free-air temperature (unless otherwise noted)

2 Symbol Parameter Value Unit Collector-emitter voltage 50 V V I Input voltage(see Note 1) 30 V Peak collector current (see Figures 14 and 15) 500 ma I OK Output clamp current 500 ma Total emitter-terminal current 2.5 A Continuous total power dissipation See Dissipation Rating Table T A Operating free-air temperature range 40 to 85 C Tstg Storage temperature range 55 to 150 C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 C NOTE 1: All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted. Dissipation Rating Table PACKAGE T A =25 C DERATING FACTOR POWER RATING above T A =25 C D 950mW 7.6mW/ C 494mW T A =85 C POWER RATING N 1150mW 9.2mW/ C 598 mw Electrical Characteristics, T A = 25 C (unless otherwise noted) Symbol Parameter Test Test Conditions Min. Typ. Max. Unit Figure Vi(on) Input Voltage 6 V CE =2V V I C = 125mA I C = 200mA I C = 275mA I C = 350mA V CE(sat) Collector-emitter 5 I C = 100mA, I B = 250mA V Saturation Voltage I C = 200 ma, I B = 350mA I C = 350mA, I B = 500mA I CEX Output Leakage Current 2 V CE = 50V, Vi = 1V 500 ua V F Clamp Diode Forward 8 I F = 350mA V Voltage Ii(off) Off-state Input Current 3 V CE =50V, T amb = 70 C, ua I C = 500mA Ii Input Current 4 Vi = 5V ma Vi = 12V I R Clamp Reverse Current 7 V R = 50V 50 ua Tamb = 70 C, V R = 50V 100 C i Input Capacitance pf Switching Characteristics, T A =25ºC tplh Turn-on Delay Time See Fig us tphl Turn-off Delay Time See Fig us V S -20 mv V OH High level output voltage after switching V S =50V, I O =300mA See Fig.10

3 PARAMETER MEASUREMENT INFORMATION

4 Figure 9. Propagation Delay-Time Waveforms NOTES: A. The pulse generator has the following characteristics: PRR = 12.5 khz, Z O B. C L includes probe and jig capacitance. C. V IH = 12 V; Figure 10. Latch-Up Test Circuit and Voltage Waveforms TYPICAL CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT (ONE DARLINGTON) COLLECTOR-EMITTER SATURATION VOLTAGE vs TOTAL COLLECTOR CURRENT TWO DARLINGTONS PARALLELED)

5 COLLECTOR CURRENT vs INPUT CURRENT THERMAL INFORMATION D PACKAGE MAXIMUM COLLECTOR CURRENT vs DUTY CYCLE N PACKAGE MAXIMUM COLLECTOR CURRENT vs DUTY CYCLE

6 Figure 14 Figure 15 APPLICATION INFORMATION

8 N SUFFIX PLASTIC DIP (MS - 001BB) NOTES: 16 1 A G F 0.25 (0.010) M T 1. Dimensions A, B do not include mold flash or protrusions. Maximum mold flash or protrusions 0.25 mm (0.010) per side. 9 8 D N B -T- C -T- K SEATING PLANE M L H J Dimension, mm Symbol MIN MAX A B C 5.33 D F G H J 0 10 K L M N 0.38 D SUFFIX SOIC (MS - 012AC) H 16 1 D G A 0.25 (0.010) M T C M 9 8 B K P C SEATING PLANE Symbol MIN MAX A B C D F G H Dimension, mm J 0 8 NOTES: K Dimensions A and B do not include mold flash or protrusion. M Maximum mold flash or protrusion 0.15 mm (0.006) per side P for A; for B 0.25 mm (0.010) per side. R J R x 45 F M

9 Type Document Revision History Rev Date Initiator Description of Change 00 Jan SM Jung Establishment 01 Oct HG Ryu Changed the Temperature Range Operation Temperature: -20C to 85 C -> -40C to 85 C Storage temperature range: -60C to 150 C -> -55C to 150 C

ILN2003A HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS TECHNICAL DATA. SCHEMATICS (each Darlington Pair)

ILN2003A HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS TECHNICAL DATA. SCHEMATICS (each Darlington Pair) TECHNICAL DATA HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS The ILN2003A are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven n-p-n Darlington pairs