M54566DP MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

Transcription

1 M66DP UNIT DARLINGTON TRANSISTOR ARRAY DESCRIPTION M66DP is sevencircuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform highcurrent driving with extremely low inputcurrent supply. PIN CONFIGURATION IN IN 6 O O IN O IN O FEATURES High breakdown voltage (BCEO> ) Highcurrent driving (Ic() = ) Active Llevel input IN IN6 IN GND O O6 O CC APPLICATIONS Interfaces between microcomputers and highvoltage, highcurrent drive systems, drives of relays and printers, and MOSbipolar logic IC interfaces. CIRCUIT DIAGRAM Package type 6PXB FUNCTION The M66 is produced by adding PNP transistors to M inputs. Seven circuits having active Llevel inputs are provided. Resistance of 8kΩ is provided between each input and PNP transistor base. The input emitters are connected to CC pin (pin 9). Output transistor emitters are all connected to the GND pin (pin 8). Collector current is imum. Collectoremitter supply voltage is imum. These ICs are optimal for drivers that are driven with N MOSIC output and absorb collector current. 8K K.K.K CC The seven circuits share the CC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. :Ω K GND ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = ~ + ) Conditions CC Supply voltage CEO Collectoremitter voltage Output, H IC Collector current Current per circuit output, L I Input voltage Pd Power dissipation Ta =, when mounted on board Topr Operating temperature Tstg Storage temperature Ratings. ~ +.~CC. ~ + ~ + W Jul

2 M66DP UNIT DARLINGTON TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS CC O IC IH IL Supply voltage Output voltage Collector current (Current per circuit when circuits are cog on simultaneously) CC= H input voltage L input voltage Duty Cycle no more than 6% Duty Cycle no more than % CC. typ 8 CC CC ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = ~+ ) II (BR)CEO CE(sat) ICC hfe Collectoremitter breakdown voltage Collectoremitter saturation voltage Input current Supply current (one circuit cog on) DC amplification factor ICEO = μa I = CC I = CC. Test conditions CC =, I = CC. IC = IC = CE =, CC =, IC =, Ta = typ* *:The typical values are those measured under ambient temperature (Ta) of. There is no guarantee that these values are obtained under any conditions.. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = ) ton toff Turnon time Turnoff time Test conditions CL = pf(note ) typ 9 ns ns NOTE TEST CIRCUIT TIMING DIAGRAM CC O Measured device RL % % PG Ω CL % % ton toff () Pulse generator (PG) characteristics: PRR = khz, tw = μs, tr = 6ns, tf = 6ns, ZO = Ω,I = to () Inputoutput conditions : RL = Ω, O =, CC = () Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jul

3 M66DP UNIT DARLINGTON TRANSISTOR ARRAY TYPICAL CHARACTERISTICS. Thermal Derating Factor Characteristics Output Saturation oltage Collector current Characteristics CC= I= Power dissipation Pd(W)... M66DP Ta= Ta= Ta=.... Ambient temperature Ta( ) Output saturation voltage CE(sat)() DutyCycleCollector current Characteristics DutyCycleCollector current Characteristics The collector current values represent the current per circuit. Repeated frequency > Hz 6 The value in the circle represents the value of the simultaneouslyoperated circuit. cc= Ta = 6 8 The collector current values represent the current per circuit. Repeated frequency > Hz 6 The value in the circle represents the value of the simultaneouslyoperated circuit. cc= Ta = 6 8 Duty cycle (%) Duty cycle (%) DC amplification factor hfe DC Amplification Factor Collector Current Characteristics CC= CE= Ta= Ta= Ta= Grounded Emitter Transfer Characteristics CC= CE= Ta= Ta= Ta= Supply voltageinput voltage CCI() Jul

4 M66DP UNIT DARLINGTON TRANSISTOR ARRAY Input Characteristics Supply Current Characteristics. CC=8 I= Input current II() Ta= Ta= Ta= Supply current ICC() Ta= Ta= Ta= Supply voltageinput voltage CCI() 6 8 Supply oltage CC() Jul

5 PRELIMINARY MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M66DP UNIT DARLINGTON TRANSISTOR ARRAY PACKAGE OUTLINE Jul