Silicon Phototransistor and Photo Darlington in 1210 SMD Package
|
|
- William Payne
- 5 years ago
- Views:
Transcription
1 in SMD Package OP,, OPF Features: High Speed and High photo sensitivity Fast response time package size High Current Gain Water clear and black lens choices Narrow Viewing Receiving Angle Compatible with IR Reflow soldering process Moisture Sensitivity Level: MSL3 OP and OPF Description: These devices consist of an NPN silicon phototransistor and photo darlington mounted in a miniature SMD package with a size chip carrier that is compatible with most automated mounting and position sensing equipment. The OP devices have a.8mm domed lens and viewing acceptance angle of C with higher collector current gains due to the lenses on package. The OP and have a water clear lens that senses ambient light to higher wavelengths for applications from 4nm to nm. The OPF has a black domed lens to reduce ambient light noise. The OP series are tested using infrared light for close correlation with Optek GaAs and GaAlAs emitters. Photo darlington devices are normally used in application where light signals are low and more current gain is needed than is possible with phototransistors. Applications: Noncontact position sensing Datum detection Machine automation Optical encoders Reflective and transmissive sensors Ordering Information Part Number Sensor Viewing Angle OP Phototransistor º Photo Darlington º OPF Phototransistor º OP and OP Pin # Transistor Collector Emitter RoHS [MILLIMETERS] DIMENSIONS ARE IN: INCHES Phone: (97) 33 or (8) FAX: (97) sensors@optekinc.com Issue E / Page of
2 in SMD Package OP,, OPF OPF Package Dimensions Recommended Solder Pad Patterns Note: Dimensions mm (inches) Issue E / Page of Phone: (97) 33 or (8) FAX: (97) sensors@optekinc.com
3 in SMD Package OP,, OPF Absolute Maximum Ratings (T A = C unless otherwise noted) Storage Temperature Range Operating Temperature Range Lead Soldering Temperature () CollectorEmitter Voltage EmitterCollector Voltage Collector Current Power Dissipation () 4 o C to + o C 4 o C to +8 o C 6 C 3 V 3 V V ma 3 ma 7 mw mw Electrical Characteristics (T A = C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode I C(ON) OnState Collector Current OPF OP... ma V CE =. V, E E =. mw/cm V CE =. V, E E =. mw/cm (3) V CE =. V, E E =. mw/cm (3) V CE(SAT) CollectorEmitter Saturation Voltage.4.7 V I C = µa, E E =. mw/cm (3) I C = ma, E E =. mw/cm (3) I CEO V BR(CEO) CollectorEmitter Dark Current CollectorEmitter Breakdown Voltage 3 3 na V CC =. V (4) V I C = µa, E E = I C = ma, E E = V BR(ECO) EmitterCollector Breakdown Voltage V I E = µa, E E = I E = µa, E E = t r, t f Rise and Fall Times µs I C = ma, R L = KΩ I C = ma, R L = KΩ λ. Spectral Bandwidth OPF 7 nm Notes:. Solder time less than seconds at temperature extreme.. Derate linearly at.33 mw/ C above C. 3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 93 nm and a radiometric intensity level which varies less than % over the entire lens surface of the phototransistor being tested. 4. To calculate typical collector dark current in µa, use the formulate I CEO = (.4 t ¾), where T A is the ambient temperature in C. Phone: (97) 33 or (8) FAX: (97) sensors@optekinc.com Issue E / Page 3 of
4 in SMD Package OP,, OPF OP and % Relative Response vs. Wavelength 8% Relative Response 6% 4% % % Wavelength (nm) 9 OP Collector Current I C (ma) vs CollectorEmiiter Voltage V CE (V) Collector Current I C (ma) vs Optical PowerEe(mW/cm ) Ee =.mw/cm Ee =.mw/cm Ee =.mw/cm Ee =.mw/cm... Ee =.mw/cm CollectorEmitter Voltage V CE (V) Optical Power Ee(mW/cm ) Issue E / Page 4 of Phone: (97) 33 or (8) FAX: (97) sensors@optekinc.com
5 in SMD Package OP,, OPF 3 3 Collector Current I C (ma) vs Ee =.mw/ Ee =.4mW/ Ee =.3mW/ Ee =.mw/.. Collector Current I C Ee =.mw/ 3 CollectorEmitter Voltage V CE 4.. Optical Power Ee(mW/cm ) OPF Sensitivity Chart Spectral Sensitivity Relative Response Vs. Wavelength Relative Collector Current vs.irradiance Phone: (97) 33 or (8) FAX: (97) sensors@optekinc.com Issue E / Page of
OP505, OP506, OP535 & OP705 Series
OP505, OP535, OP705 Features: T1 package style Variety of sensitivity ranges Choice of narrow or wide receiving angle Small package size ideal for spacelimited applications 0.050 [1.27mm] or 0.100 [2.54mm]
More informationOP800SL Series, OP800WSL Series OP830SL Series, OP830WSL Series
OP80SL Series, OP80WSL Series Features: TO8 hermetically sealed package Mechanically and spectrally matched to OP0 and OP20 LEDs TX and TXV process available (see HiRel section) Choice of narrow or wide
More information[MILLIMETERS] INCHES DIMENSIONS ARE IN:
Features: Wide acceptance angle, 00 Fast response time Linear response vs Irradiance Plastic leadless chip carrier (PLCC-) Low Capacitance Top Sensing Area Tape and reel packaging Moisture Sensitivity
More informationPLCC-2 Pkg Infrared Light Emitting Diode
PLCC2 Pkg Infrared Light Emitting Diode & Series Features: SMD Package High power GaAs, 940 nm typical peak wavelength Standard GaAlAs, 890nm typical peak wavelength High power GaAIAs K and KT, 875 nm
More informationInfrared Light Emitting Diode
Features: High power GaAs, 940 nm center wavelength High power GaAIAs and T, 875 nm center wavelength VCSEL GaAlAs, 850 nm center wavelength Point Source GaAlAs, 850 nm center wavelength PLCC2 package
More informationSlotted Optical Switch OPB355, OPB360, OPB370, OPB380, OPB390 OPB859, OPB860, OPB870, OPB880, OPB890 Series
Features: 0.125 (3.175 mm) slot width Choice of aperture (0.050 or 0.010 width) Choice of opaque or IR transmissive shell material Choice of mounting configurations Choice of lead spacing or wires L T
More informationDistributed by: www.jameco.com 18008314242 The content and copyrights of the attached material are the property of its owner. Features: Can identify if liquid is present in clear tubes that have an outside
More informationWide Gap Slotted Optical Switch OPB800 & OPB810 (L and W Series)
Features: 0.375 (9.525 mm) wide gap Choice of aperture size Choice of minimum photocurrent Choice of opaque or IR transmissive shells Available for PCBoard mounting or with 24 26 AWG wires Product Photo
More informationReflective Object Sensor OPB703 through OPB705, OPB703WZ through OPB705WZ, OPB70AWZ through OPB70FWZ
Features: Phototransistor output High sensitivity Lowcost plastic housing Available with lenses for dust protection and ambient light filtration Focused for maximum sensitivity WZ Version Description:
More informationPlastic Infrared Emitting Diode
Features: Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T1¾, TO18 or T46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series,
More informationPart. SMD Reflective Object Sensor. 1 Cathode 2 Emitter 3 Collector 4 Anode. RoHS. Moisture. Dimensions are in inches (mm)
Unfocused for sensing diffuse surfaces Uses lensed devices for collimation of light beam Low-cost plastic housing Compact surface mount package 0.300 x 0.160 x 0.114 [7.6mmx4.1mmx2.9mm] Typical peak emission
More information5mm Phototransistor EAPLP05RDQA0
Features Fast response time High photo sensitivity Pb free The product itself will remain within RoHS compliant version. Description is a high speed and high sensitive NPN silicon NPN epitaxial planar
More informationSlotted Optical Switch OPB827, OPB828, OPB829Z Series
Features: 0.125 (3.18 mm) wide, 0.215 (5.46 mm) deep slot 0.305 (7.75 mm) lead spacing (OPB827) 0.220 (5.59 mm) lead spacing (OPB828) 24-inch 26 AWG wire leads (OPB829) Inexpensive plastic housing OPB827
More informationThe slotted optical sensors in this series provide the flexibility of a custom device from a standard product line.
0.125 (3.175 mm) slot width Choice of aperture (0.050 or 0.010 width) Choice of opaque or IR transmissive shell material Choice of mounting configurations Choice of lead spacing or wires The slotted optical
More information(OPB704, OPB704WZ, OPB70BWZ, OPB70HWZ)
WZ Version The OPB703, OPB704 and OPB705 consist of an Infrared (890nm) Light Emitting Diode (LED) and a NPN silicon Phototransistor, mounted sidebyside on converging optical axes in a black plastic housing
More informationSlotted Optical Switch OPB827, OPB828, OPB829Z Series
Features: 0.125 (3.18 mm) wide, 0.315 (8.00 mm) deep slot 0.305 (7.75 mm) lead spacing (OPB827) 0.220 (5.59 mm) lead spacing (OPB828) 24-inch 26 AWG wire leads (OPB829) Inexpensive plastic housing OPB827
More informationIR Emitter and Detector Product Data Sheet LTR-S971-TB Spec No.: DS Effective Date: 12/31/2013 LITE-ON DCC RELEASE
Product Data Sheet Spec No.: DS50-2013-0040 Effective Date: 12/31/2013 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei
More informationSME/SMD Series. Infrared Components Ceramic Discrete Surface Mount Emitters and Detectors. Honeywell Sensing and Control
Emitters and Detectors FEATURES Small package size Glass lensed optics for efficient optical coupling Upright or inverted mounting capability Low profile, small size for flexible layout of multiple channels
More information1.6mm Side Looking Phototransistor PT968-8C
Features Fast response time High sensitivity Small junction capacitance Pb Free This product itself will remain within RoHS compliant version. Description is a phototransistor in miniature package which
More informationWide Gap Slotted Optical Switch OPB800 (L and W Series)
OPB800 (L and W Series) Features: 0.375 (9.525 mm) wide gap Choice of aperture size Choice of minimum photocurrent Choice of opaque or IR transmissive shells Available for PCBoard mounting or with 24 26
More informationAll of these devices are spectrally and mechanically matched to the OP593 and OP598 series phototransistors.
Features: Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T1¾, TO18 or T46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series,
More informationPT481/PT481F/ PT483F1
// Features. Epoxy resin package. Narrow acceptance ( θ : Typ. ± 3 ) 3. High sensitivity ( IC : MIN..mA at E e =.mw/cm ) : / ( IC : MIN..9mA at E e =.mw/cm ) : 4. Visible light cut-off type : /. Long lead
More informationEVERLIGHT ELECTRONICS CO., LTD.
ECN : PAGE : 1/7 Features : Fast response time High photo sensitivity Axial terminal Plastic case with IR filter Description : is a high speed and high sensitive silicon NPN phototransistor molder in a
More informationTechnical Data Sheet Opto Interrupter
Technical Data Sheet Opto Interrupter Features Fast response time High analytic Peak wavelength λp=94nm High sensitivity Pb free This product itself will remain within RoHS compliant version. DS-31MM Descriptions
More informationAgilent 4N35 Phototransistor Optocoupler General Purpose Type
Agilent N3 Phototransistor Optocoupler General Purpose Type Data Sheet Description The N3 is an optocoupler for general purpose applications. It contains a light emitting diode optically coupled to a phototransistor.
More informationSilicon NPN Phototransistor in, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released
Compliant, Released for Lead (Pb)-free 21568 VEMT22X1 DESCRIPTION VEMT2X1 VEMT2X1 series are silicon NPN epitaxial planar phototransistors with daylight blocking filter in a miniature, black dome lens
More informationSilicon NPN Phototransistor
Silicon NPN Phototransistor VEMT37 DESCRIPTION 9 8553 VEMT37 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package for surface mounting on printed boards. The device
More informationBPW17N. Silicon NPN Phototransistor. Vishay Semiconductors
Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 lens. With a lead center to center spacing of 2.54 mm and a package
More informationPHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS
PACKAGE DIMENSIONS 24.0 (609.60) MIN #26 AWG (A) (K) 0.226 (5.74) 0.020 (0.51) 4X (E) (C) 0.300 (7.62) E S FUNCTION (C) COLLECTOR (E) EMITTER (K) CATHODE (A) ANODE 0.150 (3.81) MIN 0.603 (15.32) 0.420
More informationReflective Optical Sensor with Transistor Output
TCNT2 Reflective Optical Sensor with Transistor Output DESCRIPTION 1791-2 The TCNT2 is a reflective sensor in a miniature SMD package. It has a compact construction where the emitting light source and
More informationEVERLIGHT ELECTRONICS CO., LTD.
Features Fast response time High analytic Cut-off visible wavelength λp=940nm High sensitivity This product itself will remain within RoHS compliant version. Descriptions The consists of an infrared emitting
More information6.8 MAX ( Ta = 25 C) PT Collector current IC
( PT/PTF PT/PTF TO-8 Type Phototransistor with Base Terminal Features. High sensitivity PT IC : MIN.3mA at E e =.mw/cm ( PTF IC : MIN.3mA at E e = mw/cm. Narrow acceptance : PT ( θ : TYP. ± 6 ) Wide acceptance
More informationPhotologic Dual Channel Encoder OPB950Z, OPB951
OPB95Z, OPB95 Features: Dual channel outputs for Quadrature Output Open collector inverter outputs. (.254 mm) sensor apertures for high resolution Snap mount OPB95 5±..5 Volt Vcc, OPB95 4.75 to 6 Volt
More informationHIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION The HDX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
More informationReflective Optical Sensor with Transistor Output
TCRT5000, TCRT5000L Reflective Optical Sensor with Transistor Output FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 0.2 x 5.8 x 7 Peak operating distance: 2.5
More informationSilicon Phototransistor in 0805 Package
Silicon Phototransistor in 85 Package TEMT7X1 Vishay Semiconductors 243-1 DESCRIPTION TEMT7X1 is a silicon NPN epitaxial planar phototransistor with daylight blocking filter in a miniature, black 85 package
More informationBPW17N. Silicon NPN Phototransistor. Vishay Semiconductors. Description. Features. Applications Detector in electronic control and drive circuits
Silicon NPN Phototransistor BPW17N Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 lens. With a lead center to center spacing of 2.54mm and
More informationSilicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION 9 1 BPW77 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-1 package with base terminal
More informationSilicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION is a silicon NPN epitaxial planar phototransistor in a miniature side looking, surface mount package (SMD) with dome lens and daylight blocking filter. Filter bandwidth
More informationDescription. Features. Kingbright. Applications. *Video cameras
AMBIENT LIGHT PHOTO SENSOR Package Dimensions Part Number: KPS-3227SP1C Description The KPS-3227SP1C is a NPN silicon phototransistor, It is a good effective solution to the power saving of display backlighting
More informationEVERLIGHT ELECTRONICS CO., LTD.
MODEL NO: PT323-3B ECN: Page: 1/7 Package Dimensions: Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936(22Lines) FAX: 886-2-2267-6189 http:
More informationOptocoupler DIP Package OPIA400, OPIA410 through OPIA413
Features: 5,000 Vrms electrical isolation Choice of a Single and Dual LED Phototransistor or Photo Darlington Sensor Lowcost plastic DualInLine (DIP) package Approval Agency: UL Certification No: E58730
More informationOPIA401 through OPIA409, OPIA414 SMD, SOP and SSOP Packages
Features: 2,500 or 3,750 Vrms electrical isolation Choice of a Single and Dual LED Phototransistor or Photo Darlington Sensor Lowcost plastic DualInLine (DIP) package Agency Approvals: UL Certification
More informationISOCOM IS127 COMPONENTS FPH1 IYWW DESCRIPTION FEATURES ABSOLUTE MAXIMUM RATINGS APPLICATIONS ORDER INFORMATION
DESCRIPTION The is an optically coupled isolator consisting of an infrared light emitting diodeand a high voltage NPN silicon photo darlington which has an integral baseemitter resistor to optimise switching
More informationSilicon NPN Phototransistor
TEFT43 Silicon NPN Phototransistor DESCRIPTION 94 8636-2 TEFT43 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1 plastic package with daylight blocking filter. Filter bandwidth
More informationSDP Low Light Rejection Phototransistor
FEATURES Side-looking plastic package Low light level immunity 50 (nominal) acceptance angle Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF DESCRIPTION
More informationBPV11F. Silicon NPN Phototransistor VISHAY. Vishay Semiconductors
VISHAY BPV11F Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR
More informationSilicon Phototransistor in 0805 Package
Silicon Phototransistor in 85 Package 243-1 DESCRIPTION is a silicon NPN epitaxial planar phototransistor with daylight blocking filter in a miniature, black 85 package for surface mounting. Filter bandwidth
More informationInfrared Remote-Control Receiver Module. Technical Data Sheet. Part No.: LL-M6038
Infrared Remote-Control Receiver Module Technical Data Sheet Part No.: LL-M638 Spec No.: M638 Rev No.: V.2 Date: Mar./2/26 Page: 1 OF 11 Features: Photo detector and preamplifier in one package. Photodiode
More informationOpto Interrupter ITR9909
Features Fast response time High analytic Cut-off visible wavelength λp=94nm High sensitivity Pb free This product itself will remain within RoHS compliant version Copliance with EU REACH Compliance Halogen
More informationTechnical Data Sheet OPTO INTERRUPTER
Features Wide gap between light emitter and detector(2.6 mm) High sensing accuracy Pb free The product itself will remain within RoHS compliant version. Descriptions The is a gallium arsenic infrared emitting
More informationLM3046 Transistor Array
Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected
More informationPlastic Infrared Emitting Diode OP290 Series
Features: Choice of narrow or wide irradiance pa ern Choice of power ranges Choice of T1¾, TO18 or T46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series,
More informationSilicon NPN Phototransistor, RoHS Compliant
Silicon NPN Phototransistor, RoHS Compliant TEST26 DESCRIPTION 9 673 TEST26 is a silicon NPN phototransistor with high radiant sensitivity in black, miniature, side view plastic package with daylight blocking
More informationData Sheet. HCPL-181 Phototransistor Optocoupler SMD Mini-Flat Type. Description
HCPL-8 Phototransistor Optocoupler SMD Mini-Flat Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The HCPL-8
More informationITR20510/TR8. Features. Description. Applications. Expired Period: Forever. LifecyclePhase:
Features Fast response time High sensitivity Cut-Off visible wavelength Thin Compact Pb free This product itself will remain within RoHS compliant version. Description TR20510/TR8 is a light reflection
More informationEVERLIGHT ELECTRONICS CO., LTD.
MODEL NO: PT334-6C ECN: Page: 1/7 Package Dimensions: Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936(22Lines) FAX: 886-2-2267-6189 http:
More informationTEFT4300. Silicon NPN Phototransistor. Vishay Semiconductors
TEFT43 Silicon NPN Phototransistor Description TEFT43 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 ( 3 mm) plastic package. The epoxy package itself
More informationSilicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION 94 8391 BPW96 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package. It is sensitive to visible and near infrared radiation.
More informationTechnical Data Sheet Opto Interrupter
Technical Data Sheet Opto Interrupter Features Fast response time High analytic High sensitivity Cut-off visible wavelength λ P =940nm Pb Free This product itself will remain within RoHS compliant version.
More informationITR1201SR10AR/TR. Features. Description. Applications. Device Selection Guide. Revision 1. LifecyclePhase: Expired Period: Forever
Features Fast response time High sensitivity Cut-Off visible wavelength Thin Compact Pb free This product itself will remain within RoHS compliant version. Description is a light reflection switch which
More informationITR Features. Description. Applications. Revision 1. LifecyclePhase: Expired Period: Forever
Features Fast response time High sensitivity Thin and small package Pb free This product itself will remain within RoHS compliant version Description The consists of an infrared emitting diode and a silicon
More informationReflective Optical Sensor with Transistor Output
VCNT22 Reflective Optical Sensor with Transistor Output DESCRIPTION The VCNT22 is a reflective sensor in a miniature SMD package. It has a compact construction where the emitting light source and the detector
More informationAgilent HCPL-354 AC Input Phototransistor Optocoupler SMD Mini-Flat Type
Agilent HCPL-34 AC Input Phototransistor Optocoupler SMD Mini-Flat Type Data Sheet Description The HCPL-34 contains a phototransistor, optically coupled to two light emitting diodes connected inverse parallel.
More informationSilicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION 9 1 BPW76 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-1 package with base terminal
More informationPT380/PT380F PT381/PT381F
PT38/PT38F/PT38/PT38F PT38/PT38F PT38/PT38F Features. High sensitivity ( IC : MIN.6µ A at E V = lx, PT38 ) ( IC : MIN.µ A at E V =lx, PT38 ). Compact φ 3mm resin mold package 3. Intermediate acceptance
More informationMaintenance/ Discontinued
Optoisolators (Photocouplers) This product complies with the RoHS Directive (EU 22/95/EC). CNZ373 (ON373) Optoisolators Overview The CNZ373 of optoisolators consist of a GaAs infrared LED which is optically
More information4N25 Phototransistor Optocoupler General Purpose Type. Features
4N Phototransistor Optocoupler General Purpose Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The 4N is an
More information1.6mm Side Looking Infrared Emitting Diode IR968-8C
Features Low forward voltage Peak wavelength λp=940nm High reliability This product itself will remain within RoHS compliant version. Description The is a GaAlAs infrared emitting diode. The miniature
More informationData Sheet. HCPL-181 Phototransistor Optocoupler SMD Mini-Flat Type. Features
HCPL-8 Phototransistor Optocoupler SMD Mini-Flat Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The HCPL-8
More informationCPC1302GSTR. Dual Optocoupler High-Voltage Darlington Output INTEGRATED CIRCUITS DIVISION. Description. Features 350V P. Applications.
CPC32 Dual Optocoupler High-Voltage Darlington Output Parameter Rating Units Breakdown Voltage - BO 35 V P Current Transfer Ratio - CTR -8 % Features 35V P Breakdown Voltage 375V rms Input/Output Isolation
More informationMOC215-M MOC216-M MOC217-M
DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.
More informationSilicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION 285 BPW85 is a silicon NPN phototransistor with high radiant sensitivity in clear, T- plastic package. It is sensitive to visible and near infrared radiation. FEATURES
More informationOPIA500B, OPIA4N35, OPIA4N33 OPIA2110, OPIA2210, OPIA5010, OPIA6010 SMD and SOP Packages
5 Pin Features: 3,750 or 5,000 Vrms electrical isolation Choice of a Single and Dual LED Phototransistor or Photo Darlington Sensor Lowcost plastic DualInLine (DIP) package Agency Approvals: UL Certification
More informationS150PTC-1A. Technical Data Sheet. 3.2x1.6mm, Phototransistor LED Surface Mount Chip LED. Features: Descriptions: Applications:
Features: Fast response time. High photo sensitivity. Small junction capacitance. Package in 8mm tape on 7 diameter reel. The product itself will remain within RoHS compliant Version. Descriptions: The
More informationBP104. Silicon PIN Photodiode. Vishay Semiconductors
Silicon PIN Photodiode Description BP4 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5
More informationSDD600-STR. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information
Description The consists of a high voltage photo-darlington transistor optically coupled to a light emitting diode. Optical coupling between the input IR LED and output photo- Darlington allows for high
More informationReflective Optical Sensor with Transistor Output
CNY7 OPTO A TRAN REFLECTIVO Reflective Optical Sensor with Transistor Output 2835 DESCRIPTION The CNY7 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which
More informationSilicon Phototransistor in 0805 Package
Silicon Phototransistor in 85 Package 243 DESCRIPTION is a high speed silicon NPN epitaxial planar phototransistor in a miniature 85 package for surface mounting on printed boards. The device is sensitive
More informationSilicon PIN Photodiode
Silicon PIN Photodiode 21568-1 VEMD2020X01 DESCRIPTION VEMD2000X01 VEMD2000X01 and VEMD2020X01 are high speed and high sensitive PIN photodiodes in a miniature surface mount package (SMD) with dome lens
More informationBPW41N. Silicon PIN Photodiode. Vishay Semiconductors
Silicon PIN Photodiode Description BPW4N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs
More informationSilicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION 94 8638-1 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with lens. It is sensitive to visible and near infrared
More informationCPC1303GRTR. Optocoupler with Single-Transistor Output INTEGRATED CIRCUITS DIVISION. Description. Features. Approvals.
Optocoupler with Single-Transistor Output Parameter Rating Units Breakdown Voltage - BO 3 V P Current Transfer Ratio 2 % Saturation Voltage.5 V Input Control Current.2 ma Features 5V rms Input/Output Isolation
More informationCNY70. Reflective Optosensor with Transistor Output. Description. Applications. Features. Pin Connection
Reflective Optosensor with Transistor Output Description The CNY7 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of
More informationCPC1301GRTR. Optocoupler with High-Voltage Darlington Output INTEGRATED CIRCUITS DIVISION. Description. Features. Applications.
Optocoupler with High-Voltage Darlington Output Parameter Rating Units Breakdown Voltage - BO 35 V P Current Transfer Ratio - CTR -8 % Features 5V rms Input/Output Isolation 35V P Breakdown Voltage Small
More informationITR8307/L24/TR8. Description. Applications. Device Selection Guide.
Features Fast response time High sensitivity Cut-Off visible wavelength Thin Compact Pb free This product itself will remain within RoHS compliant version. Compliance with EU REACH. Compliance Halogen
More information0805 Package Infrared Chip LED IR17-21C/TR8
Features Small double-end package Low forward voltage Good spectral matching to Si photo detector Pb free The product itself will remain within RoHS compliant version. Descriptions is an infrared emitting
More informationPhototransistor, top view type
Phototransistor, top view type RPT38PB3F The RPT38PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is
More informationHIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION The HGX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor
More informationSilicon NPN Phototransistor
TEKT54S Silicon NPN Phototransistor 16733 DESCRIPTION TEKT54S is a silicon NPN phototransistor with high radiant sensitivity, molded in a plastic package with side view lens and daylight blocking filter.
More informationAmbient Light Sensor
TEMT6X1 Ambient Light Sensor DESCRIPTION TEMT6X1 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a miniature transparent 126 package for surface mounting. It is sensitive to visible
More informationReflective Optical Sensor with Transistor Output
TCRT, TCRT Reflective Optical Sensor with 2836 TCRT A C E C TCRT 955_ FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 7 x 4 x 2.5 Peak operating distance: mm
More informationNPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Preferred Devices NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias
More informationSilicon PIN Photodiode
Silicon PIN Photodiode 20043- DESCRIPTION is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device (SMD) including the chip with a 0.23 mm 2 sensitive area and a daylight
More informationWhite Surface Mount LED Lamp
Side-view white LED Surface mount lead frame package with two pins Wide viewing angles Product Photo Here The is ideal for backlighting LCD screens and for coupling with light guides. This design combines
More informationTechnical Data Sheet Opto Interrupter
Technical Data Sheet Opto Interrupter Features Fast response time High sensitivity Cut-Off visible wavelength Thin Compact Pb free This product itself will remain within RoHS compliant version. Descriptions
More informationKST-0315A. Photo Transistor. SMD Package for Touch Screen (Compact Surface Mount Type)
KST0315A SMD Package for Touch Screen (Compact Surface Mount Type) KODENSHI KOREA CORP. 5135,Eoyangdong,Iksan,Korea TEL : +82638392405, FAX : 82638392031 www.kodenshi.com KKCQM0431(A) KST0315A
More informationDescription. Features. Kingbright. Applications. *Video cameras
AMBIENT LIGHT PHOTO SENSOR Package Dimensions Part Number: KPS-3227SP1C Description The KPS-3227SP1C is a NPN silicon phototransistor, It is a good effective solution to the power saving of display backlighting
More information1.8mm Round Subminiature Infrared LED IR42-21C/TR8
Features Compatible with infrared and vapor phase reflow solder process. Low forward voltage Good spectral matching to Si photodetector Pb free The product itself will remain within RoHS compliant version.
More informationOpto Interrupter ITR20403
Features Fast response time High sensitivity Thin and small package Pb free This product itself will remain within RoHS compliant version Compliance with EU REACH Description The consists of an infrared
More information