Silicon Phototransistor and Photo Darlington in 1210 SMD Package

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1 in SMD Package OP,, OPF Features: High Speed and High photo sensitivity Fast response time package size High Current Gain Water clear and black lens choices Narrow Viewing Receiving Angle Compatible with IR Reflow soldering process Moisture Sensitivity Level: MSL3 OP and OPF Description: These devices consist of an NPN silicon phototransistor and photo darlington mounted in a miniature SMD package with a size chip carrier that is compatible with most automated mounting and position sensing equipment. The OP devices have a.8mm domed lens and viewing acceptance angle of C with higher collector current gains due to the lenses on package. The OP and have a water clear lens that senses ambient light to higher wavelengths for applications from 4nm to nm. The OPF has a black domed lens to reduce ambient light noise. The OP series are tested using infrared light for close correlation with Optek GaAs and GaAlAs emitters. Photo darlington devices are normally used in application where light signals are low and more current gain is needed than is possible with phototransistors. Applications: Noncontact position sensing Datum detection Machine automation Optical encoders Reflective and transmissive sensors Ordering Information Part Number Sensor Viewing Angle OP Phototransistor º Photo Darlington º OPF Phototransistor º OP and OP Pin # Transistor Collector Emitter RoHS [MILLIMETERS] DIMENSIONS ARE IN: INCHES Phone: (97) 33 or (8) FAX: (97) sensors@optekinc.com Issue E / Page of

2 in SMD Package OP,, OPF OPF Package Dimensions Recommended Solder Pad Patterns Note: Dimensions mm (inches) Issue E / Page of Phone: (97) 33 or (8) FAX: (97) sensors@optekinc.com

3 in SMD Package OP,, OPF Absolute Maximum Ratings (T A = C unless otherwise noted) Storage Temperature Range Operating Temperature Range Lead Soldering Temperature () CollectorEmitter Voltage EmitterCollector Voltage Collector Current Power Dissipation () 4 o C to + o C 4 o C to +8 o C 6 C 3 V 3 V V ma 3 ma 7 mw mw Electrical Characteristics (T A = C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode I C(ON) OnState Collector Current OPF OP... ma V CE =. V, E E =. mw/cm V CE =. V, E E =. mw/cm (3) V CE =. V, E E =. mw/cm (3) V CE(SAT) CollectorEmitter Saturation Voltage.4.7 V I C = µa, E E =. mw/cm (3) I C = ma, E E =. mw/cm (3) I CEO V BR(CEO) CollectorEmitter Dark Current CollectorEmitter Breakdown Voltage 3 3 na V CC =. V (4) V I C = µa, E E = I C = ma, E E = V BR(ECO) EmitterCollector Breakdown Voltage V I E = µa, E E = I E = µa, E E = t r, t f Rise and Fall Times µs I C = ma, R L = KΩ I C = ma, R L = KΩ λ. Spectral Bandwidth OPF 7 nm Notes:. Solder time less than seconds at temperature extreme.. Derate linearly at.33 mw/ C above C. 3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 93 nm and a radiometric intensity level which varies less than % over the entire lens surface of the phototransistor being tested. 4. To calculate typical collector dark current in µa, use the formulate I CEO = (.4 t ¾), where T A is the ambient temperature in C. Phone: (97) 33 or (8) FAX: (97) sensors@optekinc.com Issue E / Page 3 of

4 in SMD Package OP,, OPF OP and % Relative Response vs. Wavelength 8% Relative Response 6% 4% % % Wavelength (nm) 9 OP Collector Current I C (ma) vs CollectorEmiiter Voltage V CE (V) Collector Current I C (ma) vs Optical PowerEe(mW/cm ) Ee =.mw/cm Ee =.mw/cm Ee =.mw/cm Ee =.mw/cm... Ee =.mw/cm CollectorEmitter Voltage V CE (V) Optical Power Ee(mW/cm ) Issue E / Page 4 of Phone: (97) 33 or (8) FAX: (97) sensors@optekinc.com

5 in SMD Package OP,, OPF 3 3 Collector Current I C (ma) vs Ee =.mw/ Ee =.4mW/ Ee =.3mW/ Ee =.mw/.. Collector Current I C Ee =.mw/ 3 CollectorEmitter Voltage V CE 4.. Optical Power Ee(mW/cm ) OPF Sensitivity Chart Spectral Sensitivity Relative Response Vs. Wavelength Relative Collector Current vs.irradiance Phone: (97) 33 or (8) FAX: (97) sensors@optekinc.com Issue E / Page of

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