[MILLIMETERS] INCHES DIMENSIONS ARE IN:

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Sandra Lynch
5 years ago
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Features: Wide acceptance angle, 00 Fast response time Linear response vs Irradiance Plastic leadless chip carrier (PLCC-) Low Capacitance

sensitivity PIN silicon photodiode mounted in a miniature SMD package.

Due to its clear lens, the responds to visible and near infrared light.

The is mechanically and spectrally matched to the OP80 and OP80 infrared LED.

1 Features: Wide acceptance angle, 00 Fast response time Linear response vs Irradiance Plastic leadless chip carrier (PLCC-) Low Capacitance Top Sensing Area Tape and reel packaging Moisture Sensitivity Level: MSL or > Description: The is a high speed, low-noise and high sensitivity PIN silicon photodiode mounted in a miniature SMD package. The device has a flat window lens, which enables a wide acceptance angle at 00. Due to its clear lens, the responds to visible and near infrared light. It is packaged in a plastic leadless chip carrier that is compatible with most automated pick and place mounting equipment. The is mechanically and spectrally matched to the OP80 and OP80 infrared LED. Applications: Non-contact position sensing Datum detection Computer peripherals Smoke detectors Touch Sensors Machine automation Optical encoders Reflective sensors Counters and sorters Miniature optical switches Part Number Ordering Information Sensor Viewing Angle Photodiode 00 Package Outline Dimensions Recommended Solder Patterns Pin # Transistor Anode DIMENSIONS ARE IN: [MILLIMETERS] INCHES Cathode RoHS Issue A. 5/0 Page of 5

2 Absolute Maximum Ratings (T A =5 C unless otherwise noted) Storage Temperature Range Operating Temperature Range -40 o C to +00 o C -5 o C to +85 o C Lead Soldering Temperature 60 C () Electrical Characteristics (T A = 5 C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS I L Light Current µa V R = 5.0 V, E E =.0 mw/cm (3) I D Dark Current na V R = 30.0 V, E E = 0.0 mw/cm (3) VR (BR) Reverse Breakdown Voltage V I R = 0 µa V F Forward Voltage - -. V I F = ma, Ee = 0.0 mw/cm λ pk Peak Sensitivity Wavelength nm V R = 5.0 tr Rise Time ns V R = 5.0, R L = k tf Fall Time ns V R = 5.0, R L = k Notes:. Solder time less than 5 seconds at temperature extreme.. Derate linearly at.33 mw/ C above 5 C. 3. E e(apt) is an unfiltered GaAlAs LED with peak emission wavelength of 890nm. The measurement of the apertured radiant incidence upon a sensing area 0.08 (.06mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and (4.99mm) from the measurement surface. Measurement surface will be considered the tip of the top-view lens. E e(apt) is not necessarily uniform within the measured area. Electrical Characteristic Performance Curves Relative Radiant Sensitivity (A/W)-% Spectral Responsivity vs. Wavelength λ Light Current IL -(µa) Typical Light Current I L vs. Irradiance Ee λ Wavelength (nm) Irradiance Ee (mw/cm ) Issue A. 5/0 Page of 5

3 More Typical Performance Curves 5.0E- 4 Total Capacitance C T (pf) vs. Reverse Bias Voltage V R (V) Total Capacitance CT (pf) 4.0E-3 3.0E-.0E-. 0 E Reverse Voltage V R (V) Dark Current ID (na) I V R = 5.0V I V R = 0.0V I V R = 0.0V Dark Current I D vs. Irradiance Ambient Temperature T A ( C) Issue A. 5/0 Page 3 of 5

4 Reel Packaging Dimensions Dimensions are in: mm Tolerance: ±0.0 Issue A. 5/0 Page 4 of 5

5 Taping and Orientation Reels come in quantity of 000 units. Reel diameter is 80mm. Tape Feed Direction Issue A. 5/0 Page 5 of 5

Infrared Light Emitting Diode

Infrared Light Emitting Diode Features: High power GaAs, 940 nm center wavelength High power GaAIAs and T, 875 nm center wavelength VCSEL GaAlAs, 850 nm center wavelength Point Source GaAlAs, 850 nm center wavelength PLCC2 package