PT481/PT481F/ PT483F1

Transcription

1 // Features. Epoxy resin package. Narrow acceptance ( θ : Typ. ± 3 ) 3. High sensitivity ( IC : MIN..mA at E e =.mw/cm ) : / ( IC : MIN..9mA at E e =.mw/cm ) : 4. Visible light cut-off type : /. Long lead pin type : Applications. VCRs, cassette tape recorders. Floppy disk drives 3. Optoelectronic switches 4. Automatic stroboscopes Narrow Acceptance High Sensitivity Phototransistor Outline Dimensions / Rest of gate - C. 3. R.8 ±..3 MAX. Mark (black).9 ±.. ± Detector center MIN. -.4 Epoxy resin. Emitter Collector R. Light blue transparent resin Visible light cut-off resin (black) ( Unit : mm) Epoxy resin.4 Rest of gate - C. 3. R.8 ±..3 MAX. Mark (black) Detector center R. Epoxy resin.4 Absolute Maximum Ratings * For 3 seconds at the position of.4mm from the bottom face of resin package ( Ta = C) Parameter Symbol Rating Unit Collector-emitter voltage V CEO 3 V Emitter-collector voltage V ECO 6 V Collector current IC ma Collector power dissipation P C 7 mw Operating temperature T opr - to +8 C Storage temperature T stg - to +8 C * Soldering temperature T sol C.9 ±.. ± MIN Emitter Collector Visible light cut-off resin ( black ) In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.

2 Electro-optical Characteristics ( Ta = C) Parameter Symbol Conditions MIN. TYP. MAX. Unit. ma * Collector V CE =V IC current Ee=.mW/cm.9-7 ma ma Collector dark current ICEO V CE = V, E e = A * Collector-emitter saturation voltage V CE(sat) Ic=.mA Ee = mw/cm -.7. V Peak emission - - nm λ p - wavelength / nm Response time Rise time Fall time * E e : Irradiance by CIE standard light source A (tungsten lamp ) tr VCE = V, I C = ma - - µ s tf R L = Ω µs Fig. Collector Power Dissipation vs. Collector power dissipation P C ( mw ) 7 3 Fig. Collector Dark Current vs. Collector dark current I CEO (A) -4 V CE - = V Ambient temperature T a ( C) Ambient temperature T a ( C) Fig. 3 Relative Collector Current vs. Relative collector current ( % ) 7 7 V CE =V E e =.mw/cm Fig.4-a Collector Current vs. Irradiance () V CE =V T a = C - 7 Ambient temperature Ta ( C) - Irradiance E e ( mw/cm )

3 Fig.4-b Collector Current vs. Irradiance ( / ) V CE =V T a = C Fig.-a Collector Current vs. Collector-emitter Voltage ( ) T a = C P C (MAX.) E e =.mw/cm.mw/cm.mw/cm.8mw/cm.6mw/cm.4mw/cm.mw/cm - Irradiance E e ( mw/cm ) Fig.-b Collector Current vs. Collector-emitter Voltage ( / ) E e =.mw/cm.mw/cm.mw/cm.8mw/cm.6mw/cm.4mw/cm.mw/cm P C (MAX.) T a = C Collector-emitter voltage V CE (V) Fig. 7 Response Time vs. Load Resistance Relative sensitivity ( % ) Collector- emitter voltage V CE (V) Fig. 6 Spectral Sensitivity T a = C 7 9 Wavelength λ ( nm ) Test Circuit for Response Time V CE =V I C = ma T a = C Response time (µ s) t r t d t f V CC Output Input R L Output t d t s 9% % t s t r t f Load resistance R L ( Ω )

4 Fig. 8 Sensitivity Diagram Relative sensitivity ( % ) + Angular displacement θ (Ta = C) + Fig.9-b Collector-emitter Saturation Voltage vs. Irradiance (/ ) ( Ta = C) Fig.9-a Collector-emitter Saturation Voltage vs. Irradiance ( ) (Ta = C) Collector-emitter saturation voltage V CE(sat) (V) IC =.ma ma ma ma 7mA ma ma Irradiance E e ( mw/cm ) Fig. Relative Output vs. Distance (Emitter : GL4 ) ( / ) Collector-emitter saturation voltage VCE(sat) (V) IC =.ma ma ma ma ma ma Relative output ( % ) Irradiance E e ( mw/ cm ) Please refer to the chapter Precautions for Use... Distance between emitter and detector d (mm)

5 This datasheet has been download from: Datasheets for electronics components.