IS474. Linear Output Type OPIC Light Detector IS474. Features. Outline Dimensions. Applications. Absolute Maximum Ratings

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1 Linear Output Type OPIC Light Detector Features. Linear output conforming to illuminance (5 lx to 5 lx). Conforming to required visual sensitivity characteristics by means of builtin filter Peak sensitivity wavelength : TYP. 55 nm. Not dependent on kind of light source such as incandescent lamp and fluorescent lamp 4. Easytomount holderintegral side view type pplications. TV sets. s of personal computers and others Outline Dimensions Type number 4..4 R JPN 4 PPP.5 Detector center.8 Production country ± θ (Unit : mm) θ * Unspecified tolerance : ±. * ( ) : Reference dimensions * Lead pitch (P) :.7 (at lead root) * Lead deflection angle θ : ± MX. Internal connection diagram Photodiode Photodiode B Current amp. Io 4 NC * OPIC (Optical IC) is a trademark of SHRP corporation. n OPIC consists of a lightdetecting element and signalprocessing circuit integrated onto a single chip. bsolute Maximum Ratings * (Ta=5 C) Parameter Symbol Rating Unit Supply voltage V CC.5 to 8 V Output current IO m Output voltage V O.5 to VCC V Power dissipation P 5 mw Operating temperature T opr 5to +85 C Storage temperature T stg to +85 C Soldering temperature T sol C Soldering area * For MX. seconds at the position shown in the right drawing In the absence of confirmation by device specification sheets, SHRP takes no responsibility for any defects that occur in equipment using any of SHRP's devices, shown in catalogs, data books, etc. Contact SHRP in order to obtain the latest version of the device specification sheets before using any SHRP's device.

2 Recommended Operating Conditions Parameter Symbol MIN. MX. Unit Supply voltage V CC V Illuminance EV * 5 lx Output voltage V O VCC.5 V Operating temperature T opr 7 C * CIE standard light source (tungsten lamp) Electrooptical Characteristics (=, Ta=5 C ) Parameter Symbol Conditions MIN. TYP. MX. Unit Test circuit Supply current Icc * Ev= lx..55. Output current IO * Ev= lx 6. 4 Output current IO * Ev= lx Output current ratio RIO Io/Io 9. Output current IO * Ev= lx Output current 4 IO4 * Ev= lx Output current ratio RIO Io/Io 4 (.9) (.) (.) Dark output current Iod * Ev= lx 5 Peak sensitivity wavelength λ p (55) Response time (rise) tr RL=.kΩ Response time (fall) tf RL=.kΩ Ev= lx PSRR *4 RL=.kΩ 48 at khz Power source Ev= lx fluctuation removability PSRR RL=.kΩ at khz 9 Ev= lx PSRR RL=.kΩ at khz * Illuminance by CIE standard light source (tungsten lamp) * Illuminance by incandescent lamp * Illuminance by fluorescent lamp *4 Power source fluctuation removability PSRR is defined according to the following formula. ripple voltage PSRR =og Vo ripple voltage Test circuit Test circuit Test circuit Ev Io Ev Io m µ µ µ µ n nm µ s µ s Ip=6nm Vin Io Ro tr,tf=.µ s Zo=5Ω Vin T.V.kΩ Vo 9% T=5µ s djust Vin so that Vo waveform may be of.v amplitude V tr tf %

3 Fig. Total Power Dissipation vs. mbient Temperature 5 Fig. Output Current vs. Illuminance Total dissipation P (mw) Output current Io (µ ) V CC =, T a = 5 C E V : Illuminance by CIE standard light source 4 5 mbient temperature Ta ( C ) Illuminance E V (lx) Fig. Spectral Sensitivity Fig. 4 Relative Output Current vs. mbient Temperature. V CC = V CC = V T a = 5 C. E = lx (CIE standard light source ) Relative output current Wavelength λ (nm) mbient temperature Ta ( C) Fig. 5 Dark Output Current vs. mbient Temperature Dark output current Iod () V CC = E V = Fig. 6 Output Current vs. Supply Voltage Output current Io ( µ ) E V = lx light source ) T a = 5 C mbient temperature Ta ( C) Supply voltage V CC (V)

4 Fig. 7 Output Current vs. Output Voltage Ev = lx Output Current vs. Output Voltage Test Circuit Output current Io (µ ) lx lx lx lx (Main detector) PD PD (Detector for correction) V CC V O I O V CC =, T a = 5 C light source ) 4 Output voltage V O (V) 5 Fig. 8 Supply Current vs. Supply Voltage Fig. 9 Supply Current vs. Illuminance Supply current I CC (m) T a = 5 C light source ) Ev = lx lx Supply current I CC (m) = Vo = light source ) lx lx Supply voltage V CC (V) Illuminance Ev (lx) Fig. Frequency Characteristics C output voltage V OP (mv) * Ev= lx * Ev= lx Frequency f (Hz) =5v Ta =5 C Frequency Characteristics Test Circuit (Main detector) L E D λ P = 6nm 47Ω Output voltage VO DP DP (Detector for correction) V OP V CC I O V O kω * Incident light quantity E V : Converted value of DC component of output voltage VO Time t

5 Fig. Radiation Diagram (Right/Left Direction) ngular displacement θ = Ta = 5 C Fig. Radiation Diagram (Top/Bottom Direction) ngular displacement θ = Ta = 5 C Precautions for Operation () It is recommended to connect a capacitor between V and near the device in order to stabilize power supply line CC L Device C L<= mm C >=. µf pieces of photodiodes are built in this device to amplify difference in collector current between them. Radiation of even light to pieces of photodiodes is recommended. Radiation of uneven light may cause change of spectral sensitivity or starting failure of the circuit after power is supplied. () Cleaning Conduct cleaning as follows. Solvent dip cleaning : Solvent temperature of 45 C max., dipping time : Within minutes Ultrasonic cleaning : Elements are affected differently depending on the size of cleaning bath, ultrasonic output, time, size of PWB and mounting method of elements. Conduct trial cleaning on actual operating conditions in advance to make sure that no problem results. Use following solvents only. Solvents : Ethyl alcohol, methyl alcohol and isopropyl alcohol () Soldering Be sure to perform soldering at values within the maximum ratings. Take care so that not external force is applied to the lead during and immediately after soldering. Do not perform reflow soldering. Please refer to the chapter "Precautions for Use". (Page 78 to 9)