PC929. Shortcircuit Protector Circuit Built-in Photocoupler Suitable for Inverter-Driving MOS-FET/IGBT PC929. Outline Dimensions.

Transcription

1 TÜ (DE 04 ) approved type is also available as an option. Shortcircuit Protector Circuit Built-in Photocoupler Suitable for Inverter-Driving MOS-FET/IGBT Features. Built-in IGBT shortcircuit protector circuit. Built-in direct drive circuit for IGBT drive (Peak output current... IOP, IOP : MAX. 0.4A). High speed response (tplh, tphl : MAX. 0.5µs) 4. High isolation voltage (iso : 4000rms) 5. Half lead pin pitch (p=.7 mm) package type 6. Recognized by UL, file NO. E640 Outline Dimensions Primary side mark (Unit : mm) Application. IGBT control for inverter drive Internal connection diagram Absolute Maximum Ratings (Ta=Topr unless otherwise specified) Parameter Symbol Rating Unit Input * Forward current IF 0 ma Reverse voltage R 6 (Ta=5 C) Supply voltage CC 5 O output current IO 0. A *4 O peak output current IOP 0.4 A O output current IO 0. A *4 O peak output current IOP 0.4 A Output O output voltage O 5 * Power dissipation PO 500 mw Overcurrent detecting voltage C CC Overcurrent detecting current IC 0 ma Error signal output voltage FS CC Error signal output current IFS 0 ma * Total power dissipation Ptot 550 mw *5 Isolation voltage iso rms Operating temperature Topr -5to + 0 C Storage temperature Tstg -55to + 5 C Soldering temperature Tsol 60 (for 0 sec) C 4 Constant voltage circuit Interface 0 Amp. IGBT protector circuit Cathode Cathode Anode 4 NC 5 NC 6 NC 7 NC FS C 0 O O 4 Terminals 4 to 7 : Shortcircuit in element * "OPIC" (Optical IC) is a trademark of the SHARP Corporation. An OPIC consists of a light-detecting element and signal processing circuit integrated onto a single chip. Operation truth table is shown on the next page. *,, Decrease in the ambient temperature range of the Absolute Max. Rating : Shown in Figs and. *4 Pulse width<=0.5µs, Duty ratio=0.0 *5 40 to 60% RH, AC for minute, Ta=5 C In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.

2 Electro-optical Characteristics () Input Output Transfer characteristics *6 When measuring output and transfer characteristics, connect a bypass capacitor (0.0 µ F or more) between and 4 near the device. *7 I FLH represents forward current when output goes from "Low" to "High". * FS=OPEN, C =0 (Ta=Topr unless otherwise specified) Parameter Symbol Conditions MIN. TYP. MAX. Unit Measuring circuit Forward voltage F Ta = 5 C, IF = 0mA F Ta = 5 C, IF = 0.mA Reverse current IR Ta = 5 C, R= µa - Terminal capacitance Ct Ta = 5 C, = 0, f = khz pf - Operating supply voltage CC Ta = - 0 to 60 C O low level output voltage OL CC =, CC = - IO = 0.A, IF = 5mA * () O high level output voltage OH CC =O = 4, IO = - 0.A IF = 5mA * 0 - () O low level output voltage OL CC =O = 4, IO = 0.A, IF = 0mA * -..0 () O leak current OL Ta = 5 C, CC =O = 5, IF = 0mA * µ A (4) High level supply current ICCH Ta = 5 C, CC =O = 4, IF = 5mA * ma CC =O = 4, IF = 5mA * - - ma Low level supply current ICCL Ta = 5 C, CC =O = 4, IF = 0mA * - ma CC =O = 4, IF = 0mA * ma (6) *7 "Low High" Ta = 5 C, CC =O = 4 * ma IFLH (5) threshold input current CC = O = 4 * ma Isolation resistance RISO Ta = 5 C, DC500, 40 to60% RH 5x0 0 x0 - Ω - "Low High" propagation delay time tplh µ s Ta = 5 C, CC =O = 4 "High Low" propagation delay time tphl µ s RG =47Ω, CG = 000pF, IF = 5mA Rise time tr µ s * Fall time tf µ s Instantaneous common mode rejection Ta = 5 C, CC =O = 4, IF = 5mA CMH /µs voltage "Output : High level" CM = 600(peak ), OH =.0 * Instantaneous common mode rejection Ta = 5 C, CC =O = 4, IF = 0mA CML voltage "Output : Low level" /µs CM = 600(peak ), OL =.0 * Response time () (7) Truth Table Input ON OFF C Input/Output O Output FS Output Low level High level High level High level Low level Low level For protective operation Low level Low level High level High level Low level High level

3 Electro-optical Characteristics () (Ta=Topr unless otherwise specified) Parameter Symbol Conditions MIN. TYP. MAX. Unit Test circuit * *0 Overcurrent detecting voltage CTH * * Overcurrent detection Protective output Error signal output Overcurrent detecting voltage hysteresis width O "High Low" delay time at protection from overcurrent O fall time at protection from overcurrent O output voltage at protection from overcurrent Low level error signal voltage CHIS tpcohl Ta= 5 C, IF = 5mA CC =0 = 4, RG =47Ω CG= 000pF, FS = OPEN * When measuring overcurrent, protective output and error signal output characteristics, connect a bypass capacitor (0.0 µ F or more) between and 4 near the device. *0 CTH represents C-terminal voltage when O output goes from "High" to "Low". CC - CC - CC - Ta = 5 C CC =0 = 4, IF = 5mA µs () tpcotf CG = 000pF, RG =47Ω 5 - µs RC CP= 000pF, =kω OE FS = OPEN - - (0) FSL Ta = 5 C, IF = 5mA, IFS = 0mA CC =O = 4, RG =47Ω, CG = 000pF, C = OPEN () () Ta= 5 C, IF = 5mA, FS = 4 High level error IFSH CC =O = 4, RG =47Ω, CG = 000pF, µ A () signal current C =0 Error signal "High Low" Ta = 5 C, RFS =.kω tpcfhl - 5 µs delay time CC =O = 4, IF = 5mA (4) CG = 000pF, RG =47Ω Error signal output pulse width tfs CP= 000pF, µ s RC =kω Fig. Forward Current vs. Ambient Temperature 60 Forward current IF (ma) Fig. Power Dissipation vs. Ambient Temperature Power dissipation Ptot, Po (mw) Ambient temperature Ta ( C) Ambient temperature Ta ( C)

4 Test Circuit Diagram () () I O CC OL I O OH () (4) OL I O A I OL (5) (6) variable 4 0 O 4 0 A I CC (7) () A SW B O IN t r = t f = 0.0 µ s Pulse width : 5 µ s Duty ratio=50% 4 0 OUT CM CM (Peak) 50% CM waveform IN waveform t plh t phl 0% CM H, O waveform SW at A, I F = 5mA CM L, O waveform SW at B, I F = 0mA OL OH OH OL OUT waveform t r t f 50% 0% () (0) 4 0 OUT CTH 4 0 OE R L C F C

5 Test Circuit Diagram () () FSL I FS I FSH A FS () OUT (4) IN t r = t f = 0.0µs Pulse width : 5 µ s Duty ratio=5% 4 0 C P R C IN t r = t f = 0.0µ s Pulse width : 5 µ s Duty ratio=5% 4 0 R C R FS I F (Input current) t pcotf O (O output voltage) 0% 50% 0% t pcohl OE 0% Error detecting threshold voltage ( CTH ) C (Detecting terminal) 0% FS (Error signal output) t pcfhl t FS 50% 50%

6 Operations of Shortcircuit Protector Circuit 4 Anode Cathode TTL, microcomputer, etc. Light emitting diode Constant voltage circuit Amp. Photodiode Interface IGBT protector circuit O O C FS R C C P IGBT 0 EE Feedback to primary side. Detection of increase in CE (sat) of IGBT due to overcurrent by means of C-terminal terminal). Reduction of the IGBT gate voltage, and suppression of the collector current.. Simultaneous output of signals to indicate the shortcircuit condition (FS signal) from FS terminal to the microcomputer 4. Judgement and processing by the microcomputer In the case of instantaneous shortcircuit, run continues. At fault, input to the photocoupler is cut off, and IGBT is turned OFF. Precautions for Operation. It is recommended that a capacitor of about 000pF is added between C-terminal and in order to prevent malfunction of C-terminal due to noise. In the case of capacitor added, rise of the detecting voltage is delayed. Thus, use together a resistance of about kω set between cc and C-terminal. The C-terminal rise time varies with the time constant of CR added. Check sufficiently before use.. The light-detecting element used for this product is provided with a parasitic diode between each terminal and. When a terminal happens to reach electric potential lower than potential even in a moment, malfunction or rupture may result. Design the circuit so that each terminal will be kept at electric potential lower than the potential at all times.