TLP700 TLP700. Industrial inverters Inverter for air conditioners IGBT/Power MOS FET gate drive. Pin Configuration (Top View) Schematic.

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1 Industrial inverters Inverter for air conditioners IGBT/Power MOS FET gate drive TOSHIB Photocoupler Gals IRED + Photo IC TLP700.58± Unit in mm TLP700 consists of a Gals light-emitting diode and an integrated photodetector. This unit is -lead SDIP package. The TLP700 is 50% smaller than the 8-pin DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification. The TLP700 is suitable for gate driving circuits for IGBTs or power MOSFETs. In particular, the TLP700 is capable of direct gate driving of low-power IGBTs ± ± Peak output current : ±2.0 (max) Guaranteed performance over temperature : 0~00 C Supply current : 2 m (max) Power supply voltage : 5~30 V Threshold input current : LH = 5 m (max) Switching time (t plh / t phl ) : 500 ns (max) Common mode transient immunity : ±0 kv/μs (min) Isolation voltage : 5000 Vrms (min) Construction mechanical rating 0.25±.27±0.2.25± ±0. 9.7±0.3-5J TOSHIB -5J Weight: 0.2 g (typ.) 7.2-mm pitch standard type 0.-mm pitch TLPXXXF type Creepage Distance Clearance Insulation Thickness 7.0 mm (min) 7.0 mm (min) 0. mm (min) 8.0 mm (min) 8.0 mm (min) 0. mm (min) Pin Configuration (Top View) UL recognized : UL577, File No. E739 Option (D) type TÜV approval : EN under plan SHIELD : NODE 2: N.C 3: CTHODE : GND 5: (OUTPUT) : Truth Table Schematic I CC Input LED M M2 Output H ON ON OFF H L OFF OFF ON L + V F 3- (M) (M2) I O 5 SHIELD GND 0.-μF bypass capacitor must be connected between pins and. (See Note.)

2 bsolute Maximum Ratings (Ta = 25 C) LED Detector Characteristics Symbol Rating Unit Forward current 20 m Forward current derating (Ta 85 C) Δ /ΔTa 0.5 m/ C Peak transient forward current (Note ) P Reverse voltage V R V Junction temperature Tj 25 C H peak output current Ta=-0~00 C I OPH 2.0 L peak output current (Note 2) I OPL 2.0 Output voltage 35 V Supply voltage 35 V Junction temperature Tj 25 C Operating frequency (Note 3) f 50 khz Operating temperature range Topr 0~00 C Storage temperature range Tstg 55~25 C Lead soldering temperature (0 s) (Note ) Tsol 20 C Isolation voltage (C, minute, R.H. 0%) (Note 5) BV S 5000 Vr m s Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note : Pulse width P W μs, 300 pps Note 2: Exponential waveform pulse width P W 0.3 μs, f 5 khz Note 3: Exponential waveform I OPH.5 ( 0.3 μs), I OPL +.5 ( 0.3 μs), Ta=00 C Note : For the effective lead soldering area Note 5: Device considered a two-terminal device: pins, 2 and 3 paired with pins, 5 and respectively. Note : ceramic capacitor (0. μf) should be connected from pin to pin to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed cm. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Input current, ON (Note 7) (ON) m Input voltage, OFF V F (OFF) V Supply voltage * (Note 8) 5 30 V Peak output current I OPH / I OPL ±.5 Operating temperature Topr 0 00 C * This item denotes operating ranges, not meaning of recommended operating conditions. Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. dditionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 7: Input signal rise time (fall time) 0.5 μs. Note 8: If the Vcc rise slope is sharp, an internal circuit might not operate with stability. Please design the Vcc rise slope under 3.0 V/μs

3 Electrical Characteristics (Ta = 0~00 C, unless otherwise specified) Characteristics Symbol Test Circuit Test Condition Min Typ.* Max Unit Forward voltage V F = 0 m, Ta = 25 C V Temperature coefficient of forward voltage V F / Ta = 0 m 2.0 mv/ C Input reverse current I R V R = V, Ta = 25 C 0 μ Input capacitance C T V =0 V, f = MHz, Ta = 25 C 00 pf Output current (Note 9) H Level L Level I OPH V V-5 = -3.5 V.0. CC = 5 V I = 5 m OPH2 V-5 = -7 V.5 I OPL V V5- = 2.5 V.0. 2 CC = 5 V I = 0 m OPL2 V5- = 7 V.5 Output voltage H Level H 3 L Level L VCC=+5V, VEE=-5V R L = 200Ω, = 5 m VCC=+5V, VEE=-5V R L = 200Ω,V F = 0.8 V V Supply current H Level I CCH 5 = 30 V = 0 m L Level I CCL =Open = 0 m m Threshold input current L H LH = 5 V, > V.8 5 m Threshold input voltage H L V FHL = 5 V, < V 0.8 V Supply voltage 5 30 V UVLO thresh hold V UVLO+ > 2.5V, IF = 5 m V V UVLO- < 2.5V, IF = 5 m V UVLO hysteresis UVLO HYS.5 V (*): ll typical values are at Ta = 25 C Note 9: Duration of Io time 50 μs, pulse Note 0: This product is more sensitive than conventional products to electrostatic discharge (ESD) owing to its low power consumption design. It is therefore all the more necessary to observe general precautions regarding ESD when handling this component. Isolation Characteristics (Ta = 25 C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance input to output C S Vs = 0 V, f = MHz (Note 5).0 pf R.H. 0 %, V Isolation resistance R S = 500 V S (Note 5) Ω C, minute 5000 Vrms Isolation voltage BV S C, second, in oil 0000 DC, minute, in oil 0000 Vdc

4 Switching Characteristics (Ta = 0~00 C, unless otherwise specified) Characteristics Symbol Test Circuit Test Condition Min Typ.* Max Unit L H tplh = 0 5 m Propagation delay time H L tphl = 30 V = 5 0 m Output rise time (0 90 %) tr 7 R g = 20 Ω = 0 5 m 50 Output fall time (90 0 %) tf C g = 0 nf = 5 0 m 50 ns Switching time dispersion between ON and OFF Common mode transient immunity at HIGH level output Common mode transient immunity at LOW level output tphl-tplh CM H CM L 8 V CM =000 Vp-p Ta = 25 C = 30 V = 0 5 m 250 = 5 m (min) = 2 V 0000 = 0 m (max) = V 0000 V/μs (*): ll typical values are at Ta = 25 C. Test Circuit : I OPH Test Circuit 2: I OPL V-5 I OPH 0.μF 0.μF I OPL V5- Test Circuit 3: H Test Circuit : L 0.μF R L V H V EE V F 0.μF R L V L V EE 3 Test Circuit 5: I CCH Test Circuit : I CCL I CCH I CCL 0.μF 0.μF

5 Test Circuit 7: t plh, t phl, t r, t f, t phl -t plh 0. μf Cg = 0nF Rg = 20 Ω tplh tr tphl tf H 90% 50% 0% L Test Circuit 8: CM H, CM L 90% 000 V SW B V CM 0.μF V CM 0% tr SW : = 5 m V tf 2V CM H + SW B: = 0 m CM L CM H = 800 V tf (μs) CM L = 800 V tr (μs) CM L (CM H ) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the LOW (HIGH) state

6 RESTRICTIONS ON PRODUCT USE EN The information contained herein is subject to change without notice. TOSHIB is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIB products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIB products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIB products are used within specified operating ranges as set forth in the most recent TOSHIB products specifications. lso, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIB Semiconductor Reliability Handbook etc. The TOSHIB products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).these TOSHIB products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIB products listed in his document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. Gas(Gallium rsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations