TLP701 TLP701. Industrial inverters Inverter for air conditioners IGBT/Power MOS FET gate drive. Pin Configuration (Top View) Schematic.

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1 TLP7 Industrial inverters Inverter for air conditioners IGBT/Power MOS FET gate drive TOSHIB Photocoupler Gals IRED + Photo IC TLP7.8±. Unit: mm TLP7 consists of a Gals light-emitting diode and an integrated photodetector. This unit is -lead SDIP package. The TLP7 is % smaller than the 8-pin DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification. The TLP7 is suitable for gate driving circuits for IGBTs or power MOSFETs. In particular, the TLP7 is capable of direct gate driving of low-power IGBTs. 3.8± ± Peak output current : ±. (max) Guaranteed performance over temperature : to C Supply current : m (max) Power supply voltage : to 3 Threshold input current : LH = m (max) Switching time (t plh / t phl ) : 7 ns (max) Common mode transient immunity : ± k/μs (min) Isolation voltage : rms (min) Construction mechanical rating Creepage Distance Clearance Insulation Thickness 7.-mm pitch standard type 7. mm (min) 7. mm (min). mm (min).-mm pitch TLPXXXF type 8. mm (min) 8. mm (min). mm (min) UL Recognized : UL77, File No. E739 Option (D) TÜ approved : EN77-- Certificate No. R3333 Maximum operating insulation voltage: 89 pk Highest permissible over voltage : 8 pk (Note) When a EN77-- approved type is needed, please designate the Option(D) Truth Table Input LED Tr Tr Output H ON ON OFF H L OFF OFF ON L.±..±.7±..±. TOSHIB -J Weight:. g (typ.) SHIELD 9.7±.3 Pin Configuration (Top iew) Schematic + F 3 (Tr) (Tr) -J : NODE : NC 3: CTHODE : GND : ( OUTPUT ) : I CC I O GND SHIELD.-μF bypass capacitor must be connected between pins and. (See Note.) Start of commercial production / -9-

2 TLP7 bsolute Maximum Ratings (Ta = C) Characteristics Symbol Rating Unit Forward current m Forward current derating (Ta 8 C) Δ /ΔTa. m/ C Detector LED Peak transient forward current (Note ) P Reverse voltage R Junction temperature Tj C H peak output current (Note ) I OPH. L peak output current (Note ) I OPL. Output voltage 3 Supply voltage 3 Junction temperature Tj C Operating frequency (Note 3) f khz Operating temperature range Topr to C Storage temperature range Tstg to C Lead soldering temperature ( s) (Note ) Tsol C Isolation voltage (C, minute, R.H. %) (Note ) B S rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note : Pulse width P W μs, 3 pps Note : Exponential waveform pulse width P W μs, f khz Note 3: Exponential waveform I OPH.3 ( μs), I OPL +.3 ( μs), Ta = C Note : For the effective lead soldering area Note : Device considered a two-terminal device: pins, and 3 paired with pins, and respectively. Note : ceramic capacitor (. μf) should be connected from pin to pin to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed cm. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Input current, ON (Note 7) (ON) 7. m Input voltage, OFF F (OFF).8 Supply voltage 3 Peak output current I OPH / I OPL ±. Operating temperature Topr C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. dditionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 7: Input signal rise time (fall time) <. μs. -9-

3 TLP7 Electrical Characteristics (Ta = to C, unless otherwise specified) Characteristics Symbol Test Circuit Test Condition Min Typ.* Max Unit Forward voltage F = m, Ta = C..7 Temperature coefficient of forward voltage F / Ta = m. m/ C Input reverse current I R R =, Ta = C μ Input capacitance C T =, f = MHz, Ta = C pf Output current (Note 8) H Level L Level I OPH CC = - =..38 I = m OPH - =.. I OPL CC = - =..3 I = m OPL - =.. Output voltage H Level H 3 L Level L = I O = m, = m I O = m, F = Supply current H Level I CCH = to 3 = m.. L Level I CCL =Open = m.3. m Threshold input current L H LH =, >. m Threshold input voltage H L FHL =, <.8 Supply voltage 3 ( * ): ll typical values are at Ta = C Note 8: Duration of I O time μs, pulse Note 9: This product is more sensitive than conventional products to electrostatic discharge (ESD) owing to its low power consumption design. It is therefore all the more necessary to observe general precautions regarding ESD when handling this component. Isolation Characteristics (Ta = C) Characteristic Symbol Test Condition Min Typ. Max Unit Capacitance input to output C S S =, f = MHz (Note ). pf R.H. %, Isolation resistance R S = S (Note ) Ω Isolation voltage B S C, second, in oil C, minute rms DC, minute, in oil dc 3-9-

4 TLP7 Switching Characteristics (Ta = to C, unless otherwise specified) Characteristics Symbol Test Circuit Test Condition Min Typ.* Max Unit L H tplh = m 7 Propagation delay time H L tphl = 3 = m 7 Output rise time ( 9 %) Output fall time (9 %) tr tf 7 R g = 7 Ω C g = 3 nf = m = m ns Switching time dispersion between ON and OFF Common mode transient immunity at HIGH level output Common mode transient immunity at LOW level output tphl-tplh =, m CM H CM L 8 CM = p-p = 3 Ta = C = m (min) = /μs = m (max) = ( * ): ll typical values are at Ta = C. Test Circuit : I OPH Test Circuit : I OPL - I OPH.μF.μF I OPL - Test Circuit 3: H Test Circuit : L H.μF I O F.μF L I O Test Circuit : I CCH Test Circuit : I CCL I CCH I CCL.μF.μF -9-

5 TLP7 Test Circuit 7: t plh, t phl, t r, t f, PDD. μf Rg = 7 Ω Cg = 3 nf tr tf H 9% % % tplh tphl L Test Circuit 8: CM H, CM L 9% SW B.μF CM % tr tf CM + SW : = m SW B: = m CM H CM L CM L = 8 tr (μs) CM H = 8 tf (μs) CM L (CM H ) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the LOW (HIGH) state. -9-

6 TLP7 F F/ Ta- IF Forward Current (m) Ta = C Coefficient F/ Ta(m/ C) Forward oltage F() Forward Current (m) llowable forward current (m) 3 -Ta Threshold input current IFLH (m) 3 CC= O> I -. FLH Ta Low Level Output oltage OL[].8... F =.8 I O = m, = OL -Ta High Level Output oltage OH[] 3 IF = m I o = -m, = OH -Ta *: The above graphs show typical characteristics. -9-

7 TLP7 Low level supply current ICCL (m) 8 CC=3 I CCL-Ta High level supply current ICCH (m) 8 =m CC=3 I CCH-Ta Low level output current IOPL ().8... IF=m,CC= (Note:9) I OPL Ta -=. -= High level output current IOPH () IF=m,CC= (Note:9) I OPH Ta 8-=. 8-= Propagation delay time tplh, tphl (ns) 3 =m, =3 Rg=7Ω,Cg=3nF tplh tphl tphl,tplh-ta *: The above graphs show typical characteristics. 7-9-

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