TLP421 TLP421. Pin Configurations (top view) TOSHIBA Photocoupler GaAs Ired & Photo Transistor. Unit in mm

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1 TOSHIBA Photocoupler GaAs Ired & Photo Transistor TLP42 Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits Unit in mm The TOSHIBA TLP42 consists of a silicone photo transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kV RMS (min)). Collector-emitter voltage: 8V (min.) Current transfer ratio: 5% (min.) Rank GB: % (min.) Isolation voltage: 5V rms (min.) UL recognized: UL577 BSI approved: BS EN665: 22 Approved no.84 BS EN695-: 22 Approved no.842 SEMKO approved: EN665, EN695, EN6335 Approved no.99249/ TOSHIBA Weight:.26 g Pin Configurations (top view) 5B : Anode 2 : Cathode 3 : Emitter 4 : Collector 27--

2 Option(D4)type TÜV approved: DIN EN Approved no. R99522 Maximum operating insulation voltage: 89V PK Maximum permissible overvoltage: 8V PK (Note): When a EN approved type is needed, please designate the Option(D4) Making the VDE application: DIN EN Construction mechanical rating 7.62mm Pitch Typical Type.6mm Pitch TLPxxxF Type Creepage distance 7.mm(min) 8.mm(min) Clearance 7.mm(min) 8.mm(min) Insulation thickness.4mm(min).4mm(min) Current Transfer Ratio Type TLP42 Classi fication (*) Current Transfer Ratio (%) (I C / I F ) I F = 5mA, V CE = 5V, Ta = 25 C Min Max Marking Of Classification (None) 5 6 Blank, Y, Y+, G, G+, B, B+, GB Rank Y 5 5 Y, Y+ Rank GR 3 G, G+ Rank BL 2 6 B, B+ Rank GB 6 G, G+, B, B+, GB (*): Ex. rank GB: TLP42 (GB) (Note): Application type name for certification test, please use standard product type name, i. e. TLP42 (GB): TLP

3 Absolute Maximum Ratings (Ta = 25 C) LED Detector Characteristic Symbol Rating Unit Forward current I F 6 ma Forward current derating(ta 39 C) ΔI F / C.7 ma / C Pulse forward current (Note 2) I FP A Power dissipation P D mw Power dissipation derating ΔP D / C. mw / C Reverse voltage V R 5 V Junction temperature T j 25 C Collector emitter voltage V CEO 8 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Power dissipation(single circuit) P C 5 mw Power dissipation derating (Ta 25 C)(single circuit) ΔP C / C.5 mw / C Junction temperature T j 25 C Operating temperature range T opr 55~ C Storage temperature range T stg 55~25 C Lead soldering temperature (s) T sol 26 C Total package power dissipation P T 25 mw Total package power dissipation derating (Ta 25 C) ΔP T / C 2.5 mw / C Isolation voltage (Note 3) BV S 5 V rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 2): μs pulse, Hz frequency (Note 3): AC, min., R.H. 6%. Apply voltage to LED pin and detector pin together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage V CC 5 24 V Forward current I F 6 25 ma Collector current I C ma Operating temperature T opr C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document

4 Individual Electrical Characteristics (Ta = 25 C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage V F I F = ma..2.3 V LED Reverse current I R V R = 5 V μa Capacitance C T V =, f = MHz 3 pf Collector emitter breakdown voltage V (BR) CEO I C =.5 ma 8 V Detector Emitter collector breakdown voltage Collector dark current I D (I CEO ) Capacitance (collector to emitter) V (BR) ECO I E =. ma 7 V V CE = 24 V (ambient light below lx) V CE = 24 V (ambient light Ta = 85 C below lx). (.).6 (). () 5 (5) C CE V =, f = MHz pf μa μa Coupled Electrical Characteristics (Ta = 25 C) Characteristic Symbol Test Condition MIn Typ. Max Unit Current transfer ratio I C / I F I F = 5 ma, V CE = 5 V Rank GB % Saturated CTR I C / I F (sat) IF = ma, V CE =.4 V Rank GB 6 3 % Collector emitter saturation voltage V CE (sat) I C = 2.4 ma, I F = 8 ma.4 IC =.2 ma, I F = ma.2 Rank GB.4 V Isolation Characteristics (Ta = 25 C) Characteristic Symbol Test Condition Min Typ. Max Unit Capacitance (input to output) C S V S =, f = MHz.8 pf Isolation resistance R S V S = 5 V 2 4 Ω Isolation voltage BV S AC, minute 5 V rms AC, second, in oil DC, minute, in oil Vdc

5 Switching Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Rise time t r 2 Fall time t f V CC = V, I C = 2 ma 3 Turn on time t on R L = Ω 3 Turn off time t off 3 Turn on time t ON 2 Storage time t s R L =.9 kω (Fig.) V CC = 5 V, I F = 6 ma 25 Turn off time t OFF 5 μs μs I F I F R L V CC V CE V CE t s V CC 4.5V.5V t ON t OFF Fig. Switching time test circuit

6 I F Ta 2 P C Ta Allowable forward current IF (ma) Allowable collector power dissipation PC (mw) I FP D R I F V F Pulse forward current IFP (ma) Forward current IF (ma) Duty cycle ratio DR Forward voltage VF (V) Forword voltage temperature coefficent ΔVF / ΔTa (mv / ) ΔV F / ΔTa I F Pulse forward current IFP (ma) Pulse width μs Repetitive frequency=hz Ta = 25 I FP V FP.6. Forward current I F (ma) Pulse forward voltage VFP (V)

7 I D Ta 8 I C V CE Collector dark current IC (μa).. VCE=24 V 5 Collector current IC (ma) IF=5mA Collector-emitter voltage V CE (V) 3 I C V CE I C I F 4 Collector current IC (ma) 2 5 IF= 2 ma Collector current IC (ma) Sample A Sample B Collector-emitter voltage V CE (V). Current transfer ratio IC / IF (%) Sample A I C /I F I F Sample B Ta = 25 C VCE = 5V VCE =.4V Ta = 25 C VCE = 5V VCE =.4V.. Forward current IF (ma) 3. Forward current IF (ma)

8 I C Ta 25.2 V CE(sat) Ta IF = 5 ma IC = ma Collector current IC (ma) 5 IF =.5 ma V CE = 5V Collector-emitter saturation voltage VCE(sat) (V) Ta = 25 C I F = 6mA V CC = 5V Switching Time R L toff Switching time (μs) ts ton Load resistance RL (kω)

9 RESTRICTIONS ON PRODUCT USE 277-EN The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).these TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations