BPV11F. Silicon NPN Phototransistor VISHAY. Vishay Semiconductors
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1 VISHAY BPV11F Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters (λ p 9 nm). The viewing angle of ± 15 makes it insensible to ambient straylight. A base terminal is available to enable biasing and sensitivity control Features Very high radiant sensitivity Standard T-1¾ ( 5 mm) package IR filter for GaAs emitters (95 nm) Angle of half sensitivity ϕ = ± 15 Base terminal available Lead-free device Applications Detector for industrial electronic circuitry, measurement and control Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit Collector Base Voltage V CBO 8 V Collector Emitter Voltage V CEO 7 V Emitter Base Voltage V EBO 5 V Collector current I C 5 ma Collector peak current t p /T =.5, t p 1 ms I CM ma Total Power Dissipation T amb 7 C P tot 15 mw Junction Temperature T j C Storage Temperature Range T stg - 55 to + C Soldering Temperature t 5 s, 2 mm from body T sd 26 C Thermal Resistance Junction/Ambient R thja 35 K/W Document Number 8155 Rev. 1., 26-Mar- 1
2 BPV11F VISHAY Electrical Characteristics T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Collector Emitter Breakdown I C = 1 ma V (BR)CEO 7 V Voltage Collector-emitter dark current V CE = 1 V, E = I CEO 1 5 na DC Current Gain V CE = 5 V, I C = 5 ma, E = h FE 5 Collector-emitter capacitance V CE = V, f = 1 MHz, E = C CEO 15 pf Collector - base capacitance V CB = V, f = 1 MHz, E = C CBO 19 pf Optical Characteristics T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Collector Light Current E e = 1 mw/cm 2, λ = 95 nm, I ca 3 9 ma V CE = 5 V Angle of Half Sensitivity ϕ ± 15 deg Wavelength of Peak Sensitivity λ p 93 nm Range of Spectral Bandwidth λ.5 9 to 98 nm Collector Emitter Saturation Voltage E e = 1 mw/cm 2, λ = 95 nm, I C = 1 ma V CEsat 13 3 mv Turn-On Time V S = 5 V, I C = 5 ma, R L = Ω t on 6 µs Turn-Off Time V S = 5 V, I C = 5 ma, R L = Ω t off 5 µs Cut-Off Frequency V S = 5 V, I C = 5 ma, R L = Ω f c 11 khz Typical Characteristics (T amb = 25 C unless otherwise specified) P tot Total Power Dissipation ( mw ) R thja I CEO Collector Dark Current ( na ) V CE =1V T amb Ambient Temperature( C ) T amb Ambient Temperature ( C ) Fig. 1 Total Power Dissipation vs. Ambient Temperature Fig. 2 Collector Dark Current vs. Ambient Temperature 2 Document Number 8155 Rev. 1., 26-Mar-
3 VISHAY BPV11F 2. 8 I ca rel - Relative Collector Current E e = 1 mw/cm 2 λı= 95 nm B Amplification T amb - Ambient Temperature ( C ) I C Collector Current ( ma ) Fig. 3 Relative Collector Current vs. Ambient Temperature Fig. 6 Amplification vs. Collector Current I ca Collector Light Current ( ma) λ =95nm E e Irradiance ( mw/ cm 2 ) 1 C CEO Collector Emitter Capacitance ( pf ) f=1mhz V CE Collector Emitter Voltage ( V ) Fig. Collector Light Current vs. Irradiance Fig. 7 Collector Base Capacitance vs. Collector Base Voltage I ca Collector Light Current ( ma) λ=95nm E e =1 mw/cm 2.5 mw/cm 2.2 mw/cm 2.1 mw/cm 2.5 mw/cm 2.2 mw/cm V CE Collector Emitter Voltage ( V ) Fig. 5 Collector Light Current vs. Collector Emitter Voltage C CEO Collector Emitter Capacitance ( pf ) f=1mhz V CE Collector Emitter Voltage ( V ) Fig. 8 Collector Emitter Capacitance vs. Collector Emitter Voltage Document Number 8155 Rev. 1., 26-Mar- 3
4 BPV11F VISHAY t on / t off Turn on / Turn off Time ( µ s ) 12 1 R L =Ω λ=95nm 8 6 t on 2 t off I C Collector Current ( ma ) Fig. 9 Turn On/Turn Off Time vs. Collector Current S( λ ) rel Relative Spectral Sensitivity λ Wavelength ( nm ) Fig. 1 Relative Spectral Sensitivity vs. Wavelength S rel - Relative Sensitivity Fig. 11 Relative Radiant Sensitivity vs. Angular Displacement Document Number 8155 Rev. 1., 26-Mar-
5 VISHAY BPV11F Package Dimensions in mm Document Number 8155 Rev. 1., 26-Mar- 5
6 BPV11F VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/5/EEC and 91/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-725 Heilbronn, Germany Telephone: 9 () , Fax number: 9 () Document Number 8155 Rev. 1., 26-Mar-
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