Reflective Optical Sensor with Transistor Output

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1 TCNT2 Reflective Optical Sensor with Transistor Output DESCRIPTION The TCNT2 is a reflective sensor in a miniature SMD package. It has a compact construction where the emitting light source and the detector are arranged in the same plane. The operating infrared wavelength is 94 nm. The detector consists of a silicon phototransistor. The sensor analog output signal (photo current) is triggered by detection of reflected infrared light from a close by object. The sensor has a built in daylight blocking filter, which greatly suppresses disturbing ambient light and therefore increases signal to noise ratio. A Cath Top view E Coll FEATURES Package type: SMD Detector type: phototransistor Dimensions (L x W x H in mm): 3.4 x 2.7 x 1.5 Operating range within > 2 % relative collector current:.2 mm to 5 mm Emitter wavelength: 94 nm Moisture sensitivity level (MSL): 3 Material categorization: For definitions of compliance please see APPLICATIONS Position sensor Optical switch Optical encoder (e.g. disc and tape drives for DVD and/or camera applications) Object detection (e.g. paper presence in printer and copy machines) PRODUCT SUMMARY DISTANCE FOR PART NUMBER MAXIMUM CTR (1) rel (mm) DISTANCE RANGE FOR RELATIVE I out > 2 % (mm) TYPICAL OUTPUT CURRENT UNDER TEST (2) (ma) DAYLIGHT BLOCKING FILTER INTEGRATED TCNT2 1.2 to 5.8 Yes Notes (1) CTR: current transfere ratio, I out /I in (2) Conditions like in table basic charactristics/sensors ORDERING INFORMATION ORDERING CODE PACKAGING VOLUME (1) REMARKS TCNT2 Tape and reel MOQ: pcs Drypack, MSL 3 Note (1) MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT (EMITTER) Reverse voltage V R 5 V Forward current I F ma Forward surge current t p μs I FSM 5 ma OUTPUT (DETECTOR) Collector emitter voltage V CEO 2 V Emitter collector voltage V ECO 7 V Collector current I C 2 ma SENSOR Total power dissipation T amb 25 C P tot 17 mw Ambient temperature range T amb - 4 to + 85 C Storage temperature range T stg - 4 to + C Soldering temperature In accordance with fig. 11 T sd 26 C Rev. 1., 2-May-12 1 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 TCNT2 ABSOLUTE MAXIMUM RATINGS P V - Power Dissipation (mw) R thja = 285 K/W I F - Forward Current (ma) R thja = 285 K/W Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Forward Current vs. Ambient Temperature BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT (EMITTER) Forward voltage I F = 2 ma V F I F = ma V Temperature coefficient of V F I F = 2 ma TKV F 1. mv/k Peak wavelength I F = ma λ P 94 nm Reverse current V R = 5 V I R 1 μa OUTPUT (DETECTOR) Collector emitter voltage I C =.1 ma V CEO 2 V Emitter collector voltage I e = μa V ECO 7 V Collector dark current V CE = 2 V, E = lx I CEO 1 3 na SENSOR Collector current, I F = 2 ma, D = 1 mm I C ma Current transfer ratio I C /I F, D = 1 mm, CTR 4 % Rise time I C =.8 ma,, R L = Ω t r 1 7 μs Fall time I C =.8 ma,, R L = Ω t f 15 7 μs Object: Flat Mirror d = working distance 1 mm 1519 Fig. 3 - Test Circuit Rev. 1., 2-May-12 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 TCNT2 BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified) I F - Forward Current (ma) 1 T amb = 25 C 2 ms pulse I C - Collector Current (μa) T amb = 25 C D = 1 mm V F - Forward Voltage (V) I F - Forward Current (ma) Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Collector Current vs. Forward Current V F - Forward Voltage (V) I F = 1 ma 1.2 I F = 2 ma I F = 5 ma I C rel - Relative Collector Current (%) I F = 1 ma I F = 2 ma I F = 5 ma Fig. 5 - Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Collector Current vs. Ambient Temperature I CEO - Collector Dark Current (na) 1 V CE = 2 V I C rel - Relative Collector Current (%) 9 I F = 5 ma 8 T amb = 25 C d - Distance (mm) Fig. 6 - Collector Dark Current vs. Ambient Temperature Fig. 9 - Relative Collector Current vs. Distance Rev. 1., 2-May-12 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 I C rel - Relative Collector Current (%) 11 I F = 2 ma 9 T amb = 25 C 8 x - direction 7 y - direction y - direction x - direction s - Displacement (mm) Fig. 1 - Relative Collector Current vs. Displacement PRECAUTIONS FOR USE 1. Over-current-proof Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change (Burn out will happen). 2. Storage 2.1. Storage temperature and rel. humidity conditions are: 5 C to 3 C, RH Floor life must not exceed 168 h, acc. to JEDEC level 3, J-STD-2. Once the package is opened, the products should be used within 168 h. Otherwise, they should be kept in a damp proof box with desiccant. Considering tape life, we suggest to use products within one year from production date. 2.3 If opened more than 168 h in an atmosphere 5 C to 3 C, RH 6 %, devices should be treated at 6 C ± 5 C for 15 h. 2.4 If humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3. REFLOW SOLDER PROFILE Temperature ( C) TCNT2 255 C 24 C 217 C max. 12 s max. ramp up 3 C/s max. 26 C 245 C max. 3 s max. s max. ramp down 6 C/s Time (s) Fig Lead (Pb)-free Reflow Solder Profile acc. J-STD-2 Rev. 1., 2-May-12 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 TCNT2 PACKAGE DIMENSIONS in millimeters Rev. 1., 2-May-12 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 TCNT2 DIMENSIONS IN SHAPE in millimeters Rev. 1., 2-May-12 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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