PLCC-2 Pkg Infrared Light Emitting Diode

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Damian Lamb
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PLCC2 Pkg Infrared Light Emitting Diode & Series Features: SMD Package High power GaAs, 940 nm typical peak wavelength Standard GaAlAs, 890nm typical peak wavelength High power GaAIAs K and KT, 875

to 00 Variety of power ranges Description: The is a GaAs and the series are GaAlAs infrared LED mounted in plastic leadless PLCC2 SMD package with a flat lens window that allows for wide beam angles.

This device requires substantially lower current to achieve same amount of output power as LEDS. Its high speed, high output makes it versatile with low input current.

The K and the KT are high performance, high speed, high power IRLEDS. The KT utilizes double hetero junction technology with reverse polarity terminals.

1 PLCC2 Pkg Infrared Light Emitting Diode & Series Features: SMD Package High power GaAs, 940 nm typical peak wavelength Standard GaAlAs, 890nm typical peak wavelength High power GaAIAs K and KT, 875 nm typical peakwavelength VCSEL GaAlAs, 850 nm typical peak wavelength Point Source GaAlAsPS, 850 nm typical peakwavelength LCC2 package style with silicon encapsulation Half Power Beam angle from 8 to 00 Variety of power ranges Description: The is a GaAs and the series are GaAlAs infrared LED mounted in plastic leadless PLCC2 SMD package with a flat lens window that allows for wide beam angles. All parts endure the attribute of silicone encapsulation to increase the longevity of the product. The is a high performance 850nm vertical cavity surface emitting laser (VCSEL). This device requires substantially lower current to achieve same amount of output power as LEDS. Its high speed, high output makes it versatile with low input current. The PS features a point source irradiance pattern, stable forward voltage over temperature and low rise and fall times, making it ideal for high speed operations. The K and the KT are high performance, high speed, high power IRLEDS. The KT utilizes double hetero junction technology with reverse polarity terminals. The low power consumption PLCC2 packaging is suitable for single device or array applications. The 80 and 280 Series LEDs are mechanically and spectrally matched to OP580 series phototransistors. Please refer to Application Bulletins 208 and 20 for additional design information and reliability (degradation) data. Applications: Noncontact position sensing Datum detection Light curtains Photoelectronic sensors Machine automation Optical encoding IR illumination Night vision systems Part Number Apertured Power (mw/cm 2 ) Ordering Information I F (ma) LED Peak Wavelength Half Power Angle nm nm 00 KT nm 90 K nm 90 PS nm nm 8 Pin # ( or 2 K PS 2 KT Pin # KT K PS 2 RoHS Phone: (972) or (800) FAX: (972) sensors@optekinc.com Page of 8

2 Infrared Light Emitting Diode & Series Absolute Maximum Ratings (T A =25 C unless otherwise noted) Storage Temperature Range Operating Temperature Range,, K, KT, PS Reverse Voltage,, PS, K, KT Peak Forward Current [ µs pulse width, 300 pps] (Except ) 40 o C to +00 o C 25 o C to +85 o C 0 o C to +70 o C 5.0 V 4.0 V.0 A Lead Soldering Temperature [/6 inch (.6 mm) from case for 5 seconds with soldering iron] 260 C () Power Dissipation 30 mw (2) Electrical Characteristics (T A = 25 C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode E E (APT) Radiant Incidence K KT PS mw/cm 2 (3) (3) (3) (3) (3) I F = 7 ma (3) V F Forward Voltage K KT PS V I F = 50 ma I F = 7 ma I R Reverse Current 00 µa V R= 5.0 V λ P Wavelength at Peak Emission KT PS, K OP nm I F = 7 ma θ HP Emission Angle at Half Power Points,, K, KT PS Degree I F = 7 ma t r t f Output Rise Time, K, KT, PS Output Fall Time, K, KT, PS ns ns ps ns ns ps I F(PK)=50 ma, PW=0 µs, and D.C.=0.0% I F(PK)=5 ma, PW=0 µs, and D.C.=0.0% (For ) Notes:. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 2.7 mw/ C above 25 C. 3. E E(APT) is a measurement of the apertured radiant incidence upon a sensing area 0.08 (2.06 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens and (4.99 mm) from the measurement surface. E E(APT) is not necessarily uniform within the measured area. Page 2 of 8 Phone: (972) or (800) FAX: (972) sensors@optekinc.com

3 PLCC2 Pkg Infrared Light Emitting Diode & Series Typical Forward Voltage Forward Voltage vs Forward Current vs Temperature Forward Current (ma) Normalized Optical Power Normalized at 50 ma and 20 C 60 C 40 C 20 C 0 C 20 C 40 C 60 C 80 C 00 C 20 C Forward Current I F (ma) Phone: (972) or (800) FAX: (972) sensors@optekinc.com Page 3 of 8

4 Infrared Light Emitting Diode & Series Normalized E E Optical Power Ee vs Forward Current I F vs Temperature T I F vs E E vs A Temp , 20 ma I F (ma).4 Forward Voltage V F vs Forward Current I F Ivs F vs Temperature T V F vs Temp. A V F (Volts) I F (ma) Page 4 of 8 Phone: (972) or (800) FAX: (972) sensors@optekinc.com

5 PLCC2 Pkg Infrared Light Emitting Diode & Series K Phone: (972) or (800) FAX: (972) sensors@optekinc.com Page 5 of 8

6 Infrared Light Emitting Diode & Series KT Page 6 of 8 Phone: (972) or (800) FAX: (972) sensors@optekinc.com

7 PLCC2 Pkg Infrared Light Emitting Diode & Series PS Phone: (972) or (800) FAX: (972) Page 7 of 8

8 Infrared Light Emitting Diode & Series Optical Power Ee(mw/cm 2 ) vs Forward Current I F vs Temperature T A Ee Relative Power Output I F Forward Current (ma) Forward Voltage V F vs Forward Current I F vs Temperature T A 2.2 Typical Forward Voltage I F Forward Current (ma) Page 8 of 8 Phone: (972) or (800) FAX: (972) sensors@optekinc.com

Infrared Light Emitting Diode

Infrared Light Emitting Diode Features: High power GaAs, 940 nm center wavelength High power GaAIAs and T, 875 nm center wavelength VCSEL GaAlAs, 850 nm center wavelength Point Source GaAlAs, 850 nm center wavelength PLCC2 package