POWEREX M63805P/FP/KP MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 8-UNIT 300mA TRANSISTOR ARRAY. 20P2N-A(FP) Package type 20P2E-A(KP)

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1 M685P/FP/KP 8-UNIT ma TRANSISTOR ARRAY DESCRIPTION M685P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION IN IN 17 IN 16 O1 O O IN IN O4 O5 IN6 6 1 O6 FEATURES Three package configurations (P, FP, and KP) Medium breakdown voltage (BCEO 5) Synchronizing current (IC(max) = ma) With zener diodes Low output saturation voltage Wide operating temperature range (Ta = 4 to +85 C) IN7 7 1 O7 IN O8 GND 9 1 NC Package type 18P4G(P) NC IN1 IN 1 NC 19 O1 18 O APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals IN 4 17 IN IN O O4 O5 IN O6 IN7 8 1 O7 IN8 9 1 O8 FUNCTION The M685P/FP/KP each have eight circuits consisting of NPN transistor. The transistor emitters are all connected to the GND pin. The transistors allow synchronous flow of ma collector current. A maximum of 5 voltage can be applied between the collector and emitter. GND 1 11 NC PN-A(FP) Package type PE-A(KP) NC : No connection CIRCUIT DIAGRAM z=7 1.5K 1K GND The eight circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. : Ω Jan.

2 M685P/FP/KP 8-UNIT ma TRANSISTOR ARRAY ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = 4 ~ +85 C) Conditions Ratings CEO IC I Pd Topr Tstg Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature Output, H Current per circuit output, L, when mounted on board M685P M685FP M685KP.5 ~ +5.5 ~ ~ ~ +15 ma W C C RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = 4 ~ +85 C) O IC Output voltage Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously) M685P M685FP M685KP Duty Cycle no more than 5% Duty Cycle no more than 1% Duty Cycle no more than % Duty Cycle no more than 1% Duty Cycle no more than 1% Duty Cycle no more than 1% ma IN Input voltage ELECTRICAL CHARACTERISTICS (Unless otherwise noted, ) (BR) CEO Collector-emitter breakdown voltage ICEO = 1µA 5 CE(sat) IN(on) hfe Collector-emitter saturation voltage On input voltage DC amplification factor IIN = 1mA, IC = 1mA IIN = ma, IC = 15mA IIN = 1mA, IC = 1mA CE = 1, IC = 1mA SWITCHING CHARACTERISTICS (Unless otherwise noted, ) ton toff Turn-on time Turn-off time CL = 15pF (note 1) 14 4 ns ns Jan.

3 M685P/FP/KP 8-UNIT ma TRANSISTOR ARRAY NOTE 1 TEST CIRCUIT TIMING DIAGRAM o Measured device RL 5% 5% PG 5Ω CL 5% 5% ton toff (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 1µs, tr = 6ns, tf = 6ns, Zo = 5Ω, IH = 18 ()Input-output conditions : RL = Ω, o = 5 ()Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics. M685P 4 Input Characteristics Power dissipation Pd (W) M685FP M685KP Input current II (ma) 1 Ta = 4 C Ambient temperature Ta ( C) Input voltage I () 4 (M685P) 4 (M685P) 1 Repeated frequency 1Hz ➀~ 1 Repeated frequency 1Hz ➀~ Jan.

4 M685P/FP/KP 8-UNIT ma TRANSISTOR ARRAY 4 (M685FP) 4 (M685FP) 1 Repeated frequency 1Hz ➀~ 1 Repeated frequency 1Hz ➀ ➁ (M685KP) 4 (M685KP) 1 Repeated frequency 1Hz ➀~➁ 1 Repeated frequency 1Hz ➀ ➁ Output Saturation oltage IB = ma IB = ma IB = 1.5mA IB = 1mA IB =.5mA Output Saturation oltage 1 I = I = 8 I = 4 I = I = 16 I = Output saturation voltage CE(sat) () Output saturation voltage CE(sat) () Jan.

5 M685P/FP/KP 8-UNIT ma TRANSISTOR ARRAY Output Saturation oltage II = ma Ta = 4 C DC amplification factor hfe DC Amplification Factor CE Output saturation voltage CE(sat) () 5 Grounded Emitter Transfer Characteristics CE = 4 5 Grounded Emitter Transfer Characteristics CE = Ta = 4 C Ta = 4 C Input voltage I () Input voltage I () Jan.