QM100HY-H HIGH POWER SWITCHING USE
|
|
- Kristopher Clarke
- 5 years ago
- Views:
Transcription
1 QMHY-H QMHY-H IC Collector current... CEX Collector-emitter voltage... hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, motor controllers, NC equipment, Welders OUTLINE DRWING & CIRCUIT DIGRM Dimensions in mm 9 () 8 () φ6. C E C C E C E1 B1 E1 B1 M Tab#11, t=. 1 (8) 6. LBEL.
2 QMHY-H BSOLUTE MXIMUM RTINGS (Tj= C, unless otherwise noted) Symbol Parameter Conditions Ratings Unit CEX (SUS) Collector-emitter voltage IC=1, EB= CEX Collector-emitter voltage EB= CBO Collector-base voltage Emitter open EBO Emitter-base voltage Collector open IC Collector current IC Collector reverse current (forward diode current) PC Collector dissipation TC= C 6 W IB Base current 6 ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 6Hz (half wave) Tj Junction temperature ~+1 C Tstg Storage temperature ~+1 C iso Isolation voltage Charged part to case, C for 1 minute Mounting torque Main terminal screw M Mounting screw M6 1.~1.96 1~ 1.96~.9 ~ N m kg cm N m kg cm Weight Typical value g ELECTRICL CHRCTERISTICS (Tj= C, unless otherwise noted) Symbol Parameter Test conditions Min. Limi Typ. Max. Unit ICEX ICBO IEBO CE (sat) BE (sat) CEO hfe ton Rth (j-c) Q Rth (j-c) R Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage current gain Switching time Thermal resistance (junction to case) CE=, EB= CB=, Emitter open EB= IC=, IB=1. IC= (diode forward voltage) IC=, CE=/ CC=, IC=, IB1= IB= Transistor part Diode part / m m m Rth (c-f) Contact thermal resistance (case to fin) Conductive grease applied.
3 QMHY-H PERFORMNCE CURES COLLECTOR CURRENT IC () COMMON EMITTER OUTPUT CHRCTERISTICS (TYPICL) Tj= C IB=. IB=1. IB=.6 IB=. IB=. 1 COLLECTOR-EMITTER OLTGE CE () COLLECTOR CURRENT IC () CURRENT GIN hfe CURRENT GIN S. COLLECTOR CURRENT (TYPICL) 1 CE=. 1 CE=. Tj= C Tj=1 C 1 1 BSE CURRENT IB () 1 1 COMMON EMITTER INPUT CHRCTERISTIC (TYPICL) CE=. Tj= C STURTION OLTGE CE (sat), BE (sat) () STURTION OLTGE CHRCTERISTICS (TYPICL) BE(sat) IB=1. Tj= C Tj=1 C CE(sat) BSE-EMITTER OLTGE BE () COLLECTOR CURRENT IC () COLLECTOR-EMITTER STURTION OLTGE CE (sat) () 1 1 COLLECTOR-EMITTER STURTION OLTGE (TYPICL) IC= IC= IC=1 SWITCHING TIME ton,, () 1 SWITCHING TIME S. COLLECTOR CURRENT (TYPICL) CC= IB1= IB= Tj= C Tj=1 C Tj= C Tj=1 C IC= BSE CURRENT IB () COLLECTOR CURRENT IC () ton
4 QMHY-H SWITCHING TIME S. BSE CURRENT (TYPICL) REERSE BIS SFE OPERTING RE SWITCHING TIME, () 1 1 CC= IC= IB1=. Tj= C Tj=1 C COLLECTOR CURRENT IC () 1 Tj=1 C IB= 1 IB= 1 8 BSE REERSE CURRENT IB () COLLECTOR-EMITTER OLTGE CE () FORWRD BIS SFE OPERTING RE DERTING FCTOR OF F. B. S. O.. COLLECTOR CURRENT IC () 1 tw= TC= C NON REPETITIE 1 1 1ms 1ms COLLECTOR-EMITTER OLTGE CE () CSE TEMPERTURE TC ( C) DERTING FCTOR (%) 6 1 COLLECTOR DISSIPTION SECOND BREKDOWN RE Zth (j c) ( C/ W) TRNSIENT THERML IMPEDNCE CHRCTERISTIC (TRNSISTOR) COLLECTOR REERSE CURRENT IC () REERSE COLLECTOR CURRENT S. COLLECTOR-EMITTER REERSE OLTGE (DIODE FORWRD CHRCTERISTICS) (TYPICL) Tj= C Tj=1 C TIME (s) COLLECTOR-EMITTER REERSE OLTGE CEO ()
5 QMHY-H SURGE COLLECTOR REERSE CURRENT ICSM () RTED SURGE COLLECTOR REERSE CURRENT (DIODE FORWRD SURGE CURRENT) Irr (), Qrr (µc) REERSE RECOERY CHRCTERISTICS OF FREE-WHEEL DIODE (TYPICL) CONDUCTION TIME (CYCLES T 6Hz) FORWRD CURRENT IF () CC= IB1= IB= Tj= C Tj=1 C Qrr Irr trr trr () TRNSIENT THERML IMPEDNCE CHRCTERISTIC (DIODE) 1..8 Zth (j c) ( C/ W) TIME (s) 1
QM150HY-H HIGH POWER SWITCHING USE
QM1HY-H QM1HY-H IC Collector current... 1 CEX Collector-emitter voltage... 6 hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, motor
More informationQM75DY-H HIGH POWER SWITCHING USE
QMDY-H QMDY-H IC Collector current... CEX Collector-emitter voltage... hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, UPS, motor
More informationQM150DY-2HK HIGH POWER SWITCHING USE
QM1DY-HK QM1DY-HK IC Collector current... 1 CEX Collector-emitter voltage... hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, motor
More informationQM30HA-H MEDIUM POWER SWITCHING USE
QMH-H QMH-H IC Collector current... CEX Collector-emitter voltage... 6 hfe current gain... Insulated Type UL Recognized Yellow Card No. E6 (N) File No. E1 PPLICTION Inverters, C servo drives, UPS, motor
More informationQM100DY-2HBK HIGH POWER SWITCHING USE
BX B1X MITSUBISHI TRNSISTOR MODULES QM1DY-HBK QM1DY-HBK IC Collector current... 1 CEX Collector-emitter voltage... 1 hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81
More informationQM300HA-2H HIGH POWER SWITCHING USE
QMH-H QMH-H IC Collector current... CEX Collector-emitter voltage... 1 hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, motor controllers,
More informationQM200HA-2H HIGH POWER SWITCHING USE
QMH-H QMH-H IC Collector current... CEX Collector-emitter voltage... 1 hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION C motor controllers, UPS, CCF, motor
More informationQM300DY-2H HIGH POWER SWITCHING USE
QMDY-H QMDY-H IC Collector current... CEX Collector-emitter voltage... hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E8 PPLICTION C motor controllers, UPS, CCF, motor
More informationQM50HA-H MEDIUM POWER SWITCHING USE
QMH-H QMH-H IC Collector current... CEX Collector-emitter voltage... 6 hfe DC current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, UPS, DC
More informationQM15HA-H MEDIUM POWER SWITCHING USE
MITSUISHI TRNSISTOR MODULES QM1H-H INSULTED TYPE QM1H-H IC Collector current... 1 CEX Collector-emitter voltage... 6 hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81
More informationQM400HA-H HIGH POWER SWITCHING USE
QMH-H QMH-H IC Collector current... CX Collector-emitter voltage... hf current gain... Insulated Type UL Recognized Yellow Card No. 86 (N) File No. 8 PPLICTION C motor controllers, UPS, motor controllers,
More informationAPPLICATION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers. 2 φ5.
TMR-M,-H TMR-M,-H PPLICTION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRWING & CIRCUIT DIGRM 1 4.6 K1 K
More informationCM150TL-12NF. APPLICATION AC drive inverters & Servo controls, etc CM150TL-12NF. IC...150A VCES...600V Insulated Type 6-elements in a pack
CMTL-NF CMTL-NF IC... CES...6 Iulated Type 6-elements in a pack PPLICTION C drive inverters & Servo controls, etc OUTLINE DRWING & CIRCUIT DIGRM Dimeio in mm.6. 6 ±. -φ. MOUNTING HOLES N P WP P UP CN L
More informationnot Recommend for New Design TM130DZ/CZ/PZ-M,-H HIGH POWER GENERAL USE
TMDZ/CZ/PZ-M,-H TMDZ/CZ/PZ-M,-H (DZ Type) PPLICTION DC motor control, NC equipment, C motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRWING & CIRCUIT DIGRM
More informationCM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HIGBT MODULES CM4HG-66H rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules CM4HG-66H IC...4 CES... High Insulated Type -element in a Pack ISiC Baseplate PPLICTION Traction
More informationPM200CVA060 PM200CVA060. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM200CVA060
MITSUBISHI PMC6 PMC6 TYPE PMC6 FETURE φ, 6 Current-sense IGBT for khz switching Monolithic gate drive & protection logic Detection, protection & status indication circuits
More informationPM100RL1B060 FLAT-BASE TYPE INSULATED PACKAGE
FETURE verter + Brake + Drive & Protection IC a) dopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM is adopted.
More informationPM50RLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM50RLB060 MITSUBISHI <INTELLIGENT POWER MODULES>
PMRLB6 PMRLB6 FETURE a) dopting new th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)=. @Tj= C b) I adopt the over-temperature conservation by
More informationPM50RSE060 PM50RSE060. APPLICATION General purpose inverter, servo drives and other motor controls PM50RSE060 LABEL
MITSUBISHI PMRSE6 PMRSE6 FLT-BSE TYPE TYPE INSULTED PCKGE PMRSE6 FETURE a) dopting new th generation planar IGBT chip, which performance is improved by µm fine rule process.
More informationCM200DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM200DY-24A. IC...200A VCES V Insulated Type 2-elements in a pack
CMDY-A CMDY-A IC...A CES... Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9 8 CE E C E G GE 8 () -φ6. MOUNTING
More informationPM25RL1B120 FLAT-BASE TYPE INSULATED PACKAGE
PMRLB PMRLB FETURE verter + Brake + Drive & Protection IC a) dopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM
More informationPM75CSD120 PM75CSD120. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM75CSD120
MITSUBISHI PMCSD PMCSD TYPE PMCSD FETURE a) dopting new th generation planar IGBT chip, which performance is improved by µm fine rule process. b) Using new Diode which
More informationBCR5KM. APPLICATION Control of heater such as electric rice cooker, electric pot. BCR5KM OUTLINE DRAWING Dimensions in mm
Refer to the page 6 as to the product guaranteed maximum junction temperature C OUTLINE DRWING Dimensions in mm ±..8 ±. 1 ±. ±. 6. ±. φ. ±. 1 ±..6 ±. 1.1 ±. 1.1 ±. E. ±.. ±.1. ±.. ±.1 IT (RMS)... DRM...
More informationPM75RSD060 PM75RSD060. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM75RSD060
MITSUBISHI MRSD6 MRSD6 FLT-BSE TYE TYE MRSD6 FETURE a) dopting new th generation planar IGBT chip, which performance is improved by µm fine rule process. r example, typical
More informationC N V (4TYP) U (5TYP) QIF (Common Collector)
QI_ Powerex, Inc., Pavilion Lane, Youngwood, Pennsylvania 9 () 9- www.pwrx.com Dual H Module mperes/ olts S NUTS (TYP) F D F J (TYP) C N H B E M H (TYP) G (TYP) R (DEEP) T (SCREWING DEPTH) (NC) K (TYP)
More informationBCR16A, BCR16B, BCR16C, BCR16E
MITSUBISHI SEMICONDUCTOR TRIC, B, C : NON-INSULTED TYPE, E : INSULTED TYPE, GLSS PSSITION TYPE OUTLINE DRWING Dimensions in mm φ. MIN φ. MIN 4 MX φ8. MX 6. MX 9 MX φ. MX MX IT (RMS)... 6 DRM...4/ IFGT!,
More informationFM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE
FM6TU- INSULTED PCKGE FM6TU- ID(rms)... DSS... Insulated Type 6-elements in a pack Thermistor inside UL Recognized File No.E8 PPLICTION C motor control of forklift (battery power source), UPS OUTLINE DRING
More informationIT (AV) A VDRM V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=30 C A ITSM
CRM-8 GLSS PSSITION TYPE CRM-8 OUTLINE DRWING φ. MX. Dimensions in mm T TERMINL T TERMINL GTE TERMINL OLTGE CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ.....9 MX IT ().... DRM... IGT...µ JEDEC : TO-9 PPLICTION
More informationPM25CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM25CLA120 MITSUBISHI <INTELLIGENT POWER MODULES>
FETURE a) dopting new 5th generation (CSTBT) chip, which performance is improved by 1µm fine rule process. r example, typical ce(sat)=1.9 @Tj=125 b) I adopt the over-temperature conservation by Tj detection
More informationIT (AV) A VDRM...400V/600V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=47 C A ITSM
OUTLINE DRWING φ. MX. Dimensions in mm CTHODE NODE GTE OLTGE CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ.....9 MX IT ().... DRM.../ IGT...µ JEDEC : TO-9 PPLICTION Leakage protector, timer, gas ignitor
More informationUnit IT (RMS) ITSM. Conditions. Commercial frequency, sine full wave 360 conduction, Tc=98 C 60Hz sinewave 1 full cycle, peak value, non-repetitive
OUTLINE DRWING Dimensions in mm MX TYPE NME CLSS.±.. MIN. MX. MX.. φ.6±. 1.. 1.....6. IT (RMS)... DRM.../ IFGT!, IT!, IT #... m (m) 1 1 1T1 TERMINL T TERMINL GTE TERMINL T TERMINL TO- Measurement point
More informationConditions Commercial frequency, sine full wave 360 conduction, Tc=56 C 4 60Hz sinewave 1 full cycle, peak value, non-repetitive
OUTLINE DRWING φ. MX. Dimensions in mm T TERMINL T TERMINL GTE TERMINL CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ... IT (RMS)... DRM... 6 IFGT!, IT!, IT #... m IFGT #...m JEDEC : TO-9..9 MX PPLICTION
More informationPS12034 PS MITSUBISHI SEMICONDUCTOR <Application Specific Specific Intelligent Power Power Module> FLAT-BASE TYPE TYPE INSULATED TYPE TYPE
MITSUBISHI SEMICONDUCTOR PS4 PS4 FLT-BSE TYPE TYPE INSULTED TYPE TYPE PS4 INTEGRTED FUNCTIONS ND FETURES Converter bridge for phase C-to-DC
More informationPM150RLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM150RLB060.
FLT-BSE TYPE INSULTED PCKGE FETURE a) dopting new 5th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)= @Tj=25 b) I adopt the over-temperature
More informationNPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO
More informationConditions Commercial frequency, sine full wave 360 conduction, Tc=103 C 3. Unit A ITSM. 60Hz sinewave 1 full cycle, peak value, non-repetitive
Refer to the page 6 as to the product guaranteed maximum junction temperature C OUTLINE DRWING Dimensions in mm TYPE NME CLSS 1. MX 6..±..9 MX 1.... MIN.±. 1.±. MX.±..8.±.1. Measurement point of case temperature
More informationPM50CSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE
MITSUBISHI FLT-BSE TYE TYE FETURE a) dopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed
More informationCP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts
Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2 44.±.5 C.58±.4 14.7±.1 D 3.1±.2 79.±.5 E 2.83 72. F.16±.1 4.±.3 G 2.83±.1 72.±.3 H.7 2. J.2±.8 5.±.2 K.87 22.
More informationNew Designs. Not Recommended for. General purpose transistor (isolated transistor and diode) QSL11 QSL11. Transistors. Rev.A 1/4
General purpose transistor (isolated transistor and diode) A 2SB7 and a RB46F are housed independently in a TSMT5 package. Applications DC / DC converter Motor driver Features ) Tr : Low CE(sat) Di : Low
More informationPM50CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM50CLA120 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>
FEATURE a) Adopting new th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. r example, typical ce(sat)=1.9 @Tj=1 C b) I adopt the over-temperature conservation by Tj
More informationMG200Q2YS60A(1200V/200A 2in1)
TOSHIBA IGBT Module Silicon N Channel IGBT (V/A in) High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
More informationBC856-HF Thru. BC858-HF Series (PNP) RoHS Device Halogen Free
-HF Thru. -HF Series (PNP) RoHS Device Halogen Free Features - Ideally suited for automatic insertion - Power dissipation PCM:.25W (@T=25 C) - Low current.(max. 1m) - Collector-base voltage CBO: = -8 =
More informationSTR-S6707 THRU STR-S6709
STR-S6707 THRU STR-S6709 WITH BIPOLR SWITCHING TRNSISTOR Data Sheet 28113* COLLECTOR COMMON BSE SINK DRIVE OVER-CURRENT PROTECTION FDBK INHIBIT V IN 1 2 3 4 5 6 7 8 9 DRIVE OSC. FULT S FULT LTCH R REF.
More informationTOSHIBA IGBT Module Silicon N Channel IGBT MG400Q2YS60A
MGQYSA TOSHIBA IGBT Module Silicon N Channel IGBT MGQYSA High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in
More informationCP10TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 10 Amperes/1200 Volts
CP1TD1-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697-18 (724) 92-7272 1 Amperes/12 Volts Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2
More informationItem Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current
7MBRS6 IGBT Modules IGBT MODULE (S series) 6 / / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC servo
More informationMJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS
MJD (NPN) MJD (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features
More informationSPECIFICATION. Preliminary MT5F Fuji Electric Systems Co.,Ltd. : Mar This specification's contents may change without previous notice.
SPECIFICATION Device Nme Type Nme DWG. No. Dte : IGBT : FGW5N6HD : : Mr.321 This specifiction's contents my chnge without previous notice. REISIONS DRAWN CHECKED CHECKED D A T E Mr./3/ 1 Mr./3/ 1 N A M
More informationAPPLICATION AC100V~200V three-phase inverter drive for small power motor control. (2.2) 21.4 ±0.5 (10) (11) (10) (4.65) (2.9) 34.9 ± ±0.5 (1.
MITSUBISHI SEMICONDUCTOR TYPE TYPE PS2869 INTEGRTED POWER FUNCTIONS 600/50 low-loss CSTBT inverter bridge for 3 phase DC-to-C power conversion INTEGRTED
More informationPM75CL1A120 FLAT-BASE TYPE INSULATED PACKAGE
PMCL1A1 PMCL1A1 FEATURE verter + Drive & Protection IC a) Adopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM is
More informationRating 600 ± to to Unit V V A A A W W C C N m. Symbol Characteristics Conditions Unit Min. Typ. Max.
600 / 50 Molded Package Features Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSO, SCSO etc.) Comprehensive line-up pplications
More informationPM150RSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE
MITSUBISHI FLT-BSE TYE TYE FETURE a) dopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed
More informationConditions. Unit IT (RMS) ITSM. Commercial frequency, sine full wave 360 conduction, Tc=86 C 60Hz sinewave 1 full cycle, peak value, non-repetitive
OUTLINE DRWING MX Dimensions in mm φ.±.1 TYPE NME CLSS 8 MX 1.±.1.8.8.±..7± MX 1 MIN.. MIN. MX 1 Measurement point of case temperature IT (RMS)... DRM.../6 IFGT!, IT!, IT #... m (1m) 6 ±.1 MX 1T1 TERMINL
More informationItem Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=80 C 30.
7MBR2S12 IGBT Modules IGBT MODULE (S series) 12 / 2 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and
More informationSTR-S5707 AND STR-S5708
QUSI-RESONNT FLYBCK FLYBCK OFF-LINE OFF-LINE SWITCHING SWITCHING REGULTOR REGULTORS STR-S5707 ND STR-S5708 OFF-LINE SWITCHING REGULTORS WITH BIPOLR SWITCHING TRNSISTOR Data Sheet 28114 COLLECTOR COMMON
More informationMJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications
MJD34, NJMJD34T4G (NPN), MJD3, NJMJD3T4G (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching
More informationPM50RSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE
MITSUBISHI FLT-BSE TYE TYE ISULTED CKGE FETURE a) dopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which
More informationContinental Device India Limited
Continental Device India Limited n ISO/TS6949 and ISO 9 Certified Company NPN SILICON PLNR POWER TRNSISTOR 2N3773 Complementary 2N669 General Purpose mplifier specially suited for Power Conditioning pplications
More informationTIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS
TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general purpose switching and amplifier applications. Features DC Current ain h FE = 20 70 @ I C =.0 dc Collector Emitter
More informationItem Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current
7MBR3S6 IGBT Modules IGBT MODULE (S series) 6 / 3 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC
More informationCOLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558
SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base
More informationUNISONIC TECHNOLOGIES CO., LTD 2SC5305
UNISONIC TECHNOLOGIES CO., LTD 2SC535 HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High Hfe For Low Base Drive Requirement * Suitable For Half Bridge Light Ballast Applications * Built-In
More informationItem Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous Tc=25 C 75. A Collector current.
7MBR5SB12 IGBT Modules IGBT MODULE (S series) 12 / 5 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and
More informationMMBT2222A SMALL SIGNAL NPN TRANSISTOR
SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY
More informationXI'AN IR-PERI Company
FineSiliconPowerNetworks HALF-BRIDGE IGBT Features Applications IGBT NPT Technology AC & DC Motor controls VCES = 1200V Ic = 75A VCE(ON) typ. = 2.8V @ Ic = 75A 10μs Short circuit capability Low turn-off
More informationObsolete Product(s) - Obsolete Product(s)
MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22
More informationUNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive
More informationContinental Device India Limited
n ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRNSISTOR With Built - in Integrated Diode between Emitter & Collector BSOLUTE MXIMUM RTINGS DESCRIPTION Collector Base oltage
More informationTYP K "T" (4 TYP) TYP TYP UP UFO V VPI GND GND GND GND IN V CC OUT S I
MITSUBISHI TELLIGENT POWER MODULES PM7RSK6 SULATED PACKAGE B D. UPC. UFO. UP. UPI. PC 6. FO 7. P 8. PI 9. WPC. WFO. WP. WPI. NC. NI. BM 6. UN 7. N 8. WN 9. FO. P. BR... N U. W A E W F G H P J K L 6 7 8
More informationItem Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C 35. 1ms IC -IC pulse.
7MBR5U12 IGBT Modules IGBT MODULE (U series) 12 / 5 / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive
More informationItem Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=75 C 30.
7MBRS14 IGBT Modules IGBT MODULE (S series) 14 / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive C and
More informationNJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS
NJD287TG, NJVNJD287TG Power Transistors NPN Silicon For Surface Mount pplications Designed for highgain audio amplifier applications. Features High DC Current Gain Low CollectorEmitter Saturation Voltage
More informationM81711FP MITSUBISHI SEMICONDUCTORS <LVIC> GENERAL PURPOSE DRIVER
MITSUBISHI SEMICONDUCTORS GENERL PURPOSE DRIER DESCRIPTION is a dual inverter type general purpose driver by 24 rating voltage. PIN CONFIGURTION (TOP IEW) FETURES RTING OLTGE... 24 OUTPUT CURRENT...
More informationGeneral Purpose Transistors
General Purpose Transistors PNP Silicon FEATURE Collector current capability I C = -5 ma. LBC87-6LTG LBC87-25LTG LBC87-4LTG Collector-emitter voltage V CEO (max) = -45 V. General purpose switching and
More informationL M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN
MG3QYSA Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 1597-1 (7) 95-77 Compact IGBT Series Module 3 Amperes/1 Volts J A D K L M N W V E C1 C DETAIL "A" H B F E CE1 U W Outline Drawing and Circuit
More informationL M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN
MGQYSA Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 1597-1 (7) 95-77 Compact IGBT Series Module Amperes/1 Volts J A D K L M N W V E C1 C DETAIL "A" H B F E CE1 U W Outline Drawing and Circuit
More informationObsolete Product(s) - Obsolete Product(s)
STT126D/DI/G TURBOSWITCH ULTR-FST HIGH OLTGE DIODE MIN PRODUCT CHRCTERISTICS I F() RRM 12 6 t rr (typ) 28ns F (max) 1.5 FETURES ND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERTIONS: FREEWHEEL OR BOOSTER DIODE.
More informationESM3030DV NPN DARLINGTON POWER MODULE
ESM3030D NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE ERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE (UL COMPLIANT) EASY
More informationItem Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C IC. Tc=80 C.
7MBRU12 IGBT Modules IGBT MODULE (U series) 12 / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive C and
More informationQID Dual IGBT HVIGBT Module 85 Amperes/6500 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT HVIGBT Module Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection
More information2SC3657 2SC3657. Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications. Maximum Ratings (Tc = 25 C)
SC67 TOSHIBA Transistor Silicon NPN Triple Diffused Type SC67 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm Excellent switching times: tr
More informationT C =25 75 T C = Symbol Parameter/Test Conditions Values Unit
MMGTUSB6C IGBT Module February ersion RoHS Compliant PRODUCT FETURES IGBT chip in trench FS-technology Low switching losses CE(sat) with positive temperature coefficient Fast switching and short tail current
More informationItem Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. Not recommend for new design. Continuous Tc=25 C
7MBRSC IGBT Modules PIM/Built-in converter with thyristor and brake (S series) / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications
More informationHigh Power Rugged Type IGBT Module
ug. 29 High Power Rugged Type IGBT Module Description DWIN S IGBT 7DM3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These
More informationItem Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. 1ms. 1 device. Continuous 1ms. 1 device
7MBR3SC6 IGBT Modules PIM/Built-in converter with thyristor and brake (S series) 6 / 3 / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications
More informationDUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) Rating Symbol Value Units Collector-Base Voltage. 50 V Collector-Emitter Voltage
DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) This device contains two electrically-isolated complimentary pair (NPN and PNP) general-purpose transistors. This device is ideal for portable applications
More informationV (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.
QIC68 Preliminary Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 9-7272 www.pwrx.com Dual Common Emitter HVIGBT Module 8 Amperes/6 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E
More informationDescription of Terminal Symbols and Terminology
Quality is our message Chapter 2 Description of Terminal Symbols and Terminology Contents Page 1. Description of Terminal Symbols...2-2 2. Description of Terminology...2-3 2 1 1 Description of Terminal
More information0.3W, PNP Plastic-Encapsulate Transistor
0.3W, PNP Plastic-Encapsulate Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to
More informationI CM Repetitive Peak Collector Current tp=1ms. 150 P tot T J = I 2 t. A 2 J =125, t=10ms, V R =0V
MMGTU7QCH6C 7 IGBT Module July ersion RoHS Compliant PRODUCT FETURES IGBT chip in trench FS-technology Low switching losses CE(sat) with positive temperature coefficient Fast switching and short tail current
More informationPS21265-P/AP TRANSFER-MOLD TYPE TYPE INSULATED TYPE TYPE
MITSUBISHI SEMICONDUCTOR TYPE TYPE PS21265 INTEGRTED POWER FUNCTIONS 600/20 low-loss 5 th generation IGBT inverter bridge for three phase DC-to-C power
More informationNPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 546 BC 547 BC 548 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base
More informationReplaces March 2002, version DS DS July 2002
DIM24ESM17 DIM24ESM17 Single Switch IGBT Module Replaces March 22, version DS54473. DS54474.1 July 22 FETURES 1µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated
More informationExcellent Integrated System Limited
Datasheet of -7 - TRNS PNP 3V 1 SOT-323 Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Diodes Incorporated -7 For any
More information2SD1508 2SD1508. Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm High
More informationSymbol Parameter/Test Conditions Values. 200 P tot Power Dissipation Per IGBT T C =25, T Jmax = Symbol Parameter/Test Conditions Values
MMG1W6X6EN 6 1 Six-Pack Module February 17 ersion 1 RoHS Compliant PRODUCT FETURES IGBT 3 Chip(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current Low saturation
More informationMUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k
MUN, MMUNL, MUN5, DTCEE, DTCEM, NSBCEF Digital Transistors (BRT) R =. k, R =. k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single
More informationCM600YE2N-12F / CM600YE2P-12F TLI-Series (Three Level Inverter) IGBT 600 Amperes/600 Volts
CM6YN-12F / CM6YP-12F TLI-Series (Three Level Inverter) IGBT P V Q W Q V R P S J Y, Z U (2 PLACES) L ( PLACES) M N K (3 PLACES) Y, Z G F E B CM6YN-12F D A X T C Outline Drawing and Circuit Diagram RTC
More informationNPN General Purpose Transistor
NPN General Purpose Transistor!Features 1) BCEO > 4 (IC = 1mA) 2) Complements the UMT39 / SST39 / MMST39 / 2N39.!External dimensions (Units : mm) UMT394 ROHM : UMT3 EIAJ : SC7 2.±.2 1.3±.1...3 1.2±.1 2.1±.1.9±.1.2.7±.1.1±.
More informationMMG50S120B6UC. 1200V 50A IGBT Module. Preliminary PRODUCT FEATURES APPLICATIONS
December 28 Preliminary MMG5S2B6UC 2 5 IGBT Module RoHS Compliant PRODUCT FETURES IGBT chip in trench FS-technology Low switching losses CE(sat) with positive temperature coefficient Fast switching and
More information