Modeling the Influence of Dielectric Interface Traps on I-V Characteristics of TFETs
|
|
|
- Ethel Bishop
- 5 years ago
- Views:
Transcription
1 Modeling the Influence of Dielectric Interface Traps on I-V Characteristics of TFETs Jie Min 1, Peter Asbeck UCSD 1 Present address: Global Foundries, Santa Clara, CA
2 Schematic TFET Structures Based on GaSb & InAs Planar (double gate) TFET i-inas Nanowire TFET p-gasb Wernersson et al n-inas
3 Schematic TFET Structures Based on GaSb & InAs Planar (double gate) TFET i-inas Nanowire TFET Defects cause significant nonidealities p-gasb Wernersson et al n-inas
4 Schematic TFET Structures Based on GaSb & InAs Planar (double gate) TFET i-inas Defects cause significant nonidealities Dielectric interface defects Nanowire TFET p-gasb Dielectric interface defects highlighted here Wernersson et al n-inas
5 Study Objective Provide simplified model to understand impact of individual interface traps on I-V characteristics of FETs Defect Effects SS degradation Vt Variability Low Frequency Noise Related Questions How to measure? How to minimize? Time, temperature dependence How bad relative to MOSFET?
6 Planar (Double Gate) TFET Simulation Electrostatics (fully depleted case) no defect Electrostatic potential along centerline Vds=.3V 15mV COMSOL V(x)~ ~Vo exp(-πx/λ)-vo
7 Planar (Double Gate) TFET Simulation Electrostatics (fully depleted case) no defect Electrostatic potential along centerline Vds=.3V 15mV Current Flow Follows Taur, Wu & Min, 215 COMSOL V(x)~ ~Vo exp(-πx/λ)-vo
8 Potential Perturbation Caused by Charged Defect Single Defect (charge=q) at dielectric/channel interface at distance x from junction Channel thickness: 5nm EOT: 1.2nm Charge q Electrostatic potential along centerline x=1.5nm x=4.5nm x=15nm 24mV 31mV COMSOL simulations
9 Potential Perturbation Caused by Charged Defect Single Defect (charge=q) at dielectric/channel interface at distance x from junction Channel thickness: 5nm EOT: 1.2nm Charge q Electrostatic potential along centerline x=1.5nm x=4.5nm x=15nm 24mV 31mV COMSOL simulations Green s Function (approximate) G xx (, ) t ε = q x x t / λ trap e = 2π x x (, ) ch V G xx t t Induced Potential (V) Analytical results 31mV Position (nm)
10 Potential for TFET with Interface Charges Conduction Band Energy (ev) q - q ideal Id (A) Id (A) q - q ideal Position (m) x 1-8 Channel Conduction Band With Defect Vgs Vgs (V) (V) Current for narrow strip (single mode)
11 Potential for TFET with Interface Charges Conduction Band Energy (ev) q - q ideal Id (A) Id (A) q + q ideal ideal - q Position (m) x 1-8 Channel Conduction Band With Defect Vgs Vgs (V) (V) Current for narrow strip (single mode) Double gate TFET Traps randomly distributed Positive and negative charged traps Energy (ev) Ideal Barrier Defect Potentials Total Potential
12 (c) Calculated Id-Vgs Characteristics Planar TFET with Dielectric Interface Traps 1 different random distributions considered for each number of traps Traps equally likely to be positive or negative (b) (a) Id (A) V gs (V) 1 trap 1 trap Nit=1.25e1 charges/cm V gs (V) 8 traps 8 traps Nit=1e11 charges/cm traps V gs (V) 4 traps Nit=5e11 charges/cm2 Double gate TFET dimensions: Lg=4nm Wg=1nm Variability in Vth Worsening of subthreshold slope
13 Histograms of Current at Different Bias Conditions 2 15 Double gate structure: ON Current (Vgs=.3V, Vds=.3V) 4 15 (a) V gs = V ds =.3V (b) (c) 4 traps 8 traps 35 V gs = V ds =.3V 4 traps 8 traps 1 trap 3 V gs = V ds =.3V 1 trap 25 1 Counts Counts V gs =.1V 4 V ds = traps.3v 4 traps Trap-free TFET current 5 I ds (A) Effect on ON current relatively small Double gate structure: OFF Current (Vgs=.1V, Vds=.3V) traps 1 trap V gs =.1V V ds =.3V 8 traps I ds (A) V gs =.1V V ds =.3V 1 trap I ds (A) I ds (A) Effect on OFF current dramatic Variation in current density I ds (A) I ds (A) Degradation in leakage current
14 At Id=1uA/um Interface Effects Considerations 1 defect 8 defects 4 defects Std dev Vgs 1.2 mv 8.7 mv 14.6 mv Subthreshold slope of Idave 28 mv/dec 32.2 mv/dec 66.5 mv/dec Std dev Vgs roughly follows N defects 1/2 Model: independent FET strips with varying Vt Average subthreshold slope degrades If ideal subthreshold slope increases with bias σ Vt =2mV σ Vt =1mV ideal Numerical simulation for gaussian variation of Vth
15 At Id=1uA/um Interface Effects Considerations 1 defect 8 defects 4 defects Std dev Vgs 1.2 mv 8.7 mv 14.6 mv Subthreshold slope of Idave 28 mv/dec 32.2 mv/dec 66.5 mv/dec Std dev Vgs roughly follows N defects 1/2 Model: independent FET strips with varying Vt Average subthreshold slope degrades If ideal subthreshold slope increases with bias Id (ua/um) MOSFET σ Vt =2mV 1-3 σ Vt =1mV Vgs(V) ideal Numerical simulation for gaussian variation of Vth
16 Nanowire Modeling Ideal Structure (fully depleted channel) V(x)~ Very good agreement with analytical model COMSOL electrostatics I-V analysis: 1D tunneling model Channel radius: 1nm Channel length: 1nm Results compare well with Lund University data IEDM 216 (ss down to 43 mv/dec) Only adjustable parameter: Vt shift
17 Electrostatics for Nanowire TFET with Defect x=4nm 3.2mV x=15nm 5.8mV Fully depleted channel assumed Potential evaluated along axis of nanowire Channel radius: 1nm Channel length: 1nm EOT: 1.5nm Peak potential change: 6mV (x5 lower than planar example) COMSOL simulation Analytical results 6 x 1-3 Approximate Green s Function Exact Green s Function 1 G r= r = kz kz (, ) sin ( ) sin ( ) s n n t π L n= 1 ( ) ( ) ( ) ( ) I kr K kr I kr K kr n tot n s n s n tot I ( ) ( kr ) I n tot Induced potential(v) mV r d = G( z, z r q 2 q ) = + ( z z q ) q exp( βrd 2πεα r 2 d / r ) q Position(m) x
18 Effect of Defect Potential on Nanowire Current 1-6 Simulated Id-Vgs Curves With Single Defect Charge q at 8nm 1-7 Id(A) q -q Memisevic &Wernersson Vgs (V) Experimental Imax/Imin=
19 MOSFETs vs TFETs Comparison of Effects of Interface Charges on Current Effect on Defect Charge on Conduction Band Energy in Channel Highest potential dominates Potential near tunnel junction dominates.2 Induced potential(v) Induced potential(v) Position(m) x Position(m) x 1-7 For MOSFETs, defects near center of channel are most important (For TFETs, defects close to tunnel junction are most important) Effect of Positive and Negative defects roughly symmetric with short channels <4nm Effect of Negative defects predominates in long channel devices Defect charges cause Vth variability but do not change subthreshold slope -.3
20 Relation to 1/f Noise 1/f theory: fluctuation of trapping/de-trapping in oxide traps S 2 q ktnbt Q = S id = S f κ di f / dq Q ( trap N bt : Oxide trap density, 1 19 /cm 3 /ev κ: Tunneling decay factor,~7 1 7 /cm 2 ) κ = Φ 2m B 2 This work provides estimate of di/dq trap (For fully depleted channel) 2
21 Relation to 1/f Noise 1/f theory: fluctuation of trapping/de-trapping in oxide traps S 2 q ktnbt Q = S id = S f κ di f / dq Q ( trap N bt : Oxide trap density, 1 19 /cm 3 /ev κ: Tunneling decay factor,~7 1 7 /cm 2 ) κ = Φ 2m B 2 This work provides estimate of di/dq trap (For fully depleted channel) Compare TFET and MOSFET assuming same value of S Q Data from Lund University One adjustable parameter to fit both simultaneously Hellenbrand, Wernersson et al 21
22 Summary & Conclusions Simple formalism allows computing effects of defects with fixed charge q along channel Variability in Vth Increase in subthreshold slope Subthreshold slope increase is unavoidable if Vth varies randomly (for TFET I-V curves) Cylindrical geometry appears to be more forgiving than planar geometry for same current Smallest possible EOT is beneficial Interface state densities should be reduced to below 1 1 to 1 11 cm -2 to avoid these effects Authors are grateful to Prof. Wernersson for making available some research results prior to publication
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mv/decade and Ion = 10 A/m for Ioff = 1 na/m at VDS = 0.
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mv/decade and Ion = 10 A/m for Ioff = 1 na/m at VDS = 0.3 V Memisevic, E.; Svensson, Johannes; Hellenbrand, Markus; Lind, Erik;
Experimentally reported sub-60mv/dec
Experimentally reported sub-60mv/dec swing in Tunnel FETs? 1 We considered InAs conventional, lateral transistor architectures: GAA nanowire, Fin FETs FETs (Tri gate) UTB,DG SOI Analysis is not directly
Tunnel FET architectures and device concepts for steep slope switches Joachim Knoch
Tunnel FET architectures and device concepts for steep slope switches Joachim Knoch Institute of Semiconductor Electronics RWTH Aachen University Sommerfeldstraße 24 52074 Aachen Outline MOSFETs Operational
III-V Vertical Nanowire FETs with Steep Subthreshold Towards Sub-10 nm Diameter Devices
III-V Vertical Nanowire FETs with Steep Subthreshold Towards Sub-10 nm Diameter Devices Jesús A. del Alamo, Xin Zhao, Wenjie Lu, Alon Vardi Microsystems Technology Laboratories, MIT E 3 S Retreat September
Integration of III-V heterostructure tunnel FETs on Si using Template Assisted Selective Epitaxy (TASE)
Integration of III-V heterostructure tunnel FETs on Si using Template Assisted Selective Epitaxy (TASE) K. Moselund 1, D. Cutaia 1. M. Borg 1, H. Schmid 1, S. Sant 2, A. Schenk 2 and H. Riel 1 1 IBM Research
Sub-Threshold Region Behavior of Long Channel MOSFET
Sub-threshold Region - So far, we have discussed the MOSFET behavior in linear region and saturation region - Sub-threshold region is refer to region where Vt is less than Vt - Sub-threshold region reflects
Record I on (0.50 ma/μm at V DD = 0.5 V and I off = 100 na/μm) 25 nm-gate-length ZrO 2 /InAs/InAlAs MOSFETs
Record I on (0.50 ma/μm at V DD = 0.5 V and I off = 100 na/μm) 25 nm-gate-length ZrO 2 /InAs/InAlAs MOSFETs Sanghoon Lee 1*, V. Chobpattana 2,C.-Y. Huang 1, B. J. Thibeault 1, W. Mitchell 1, S. Stemmer
SUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION Dopant profiling and surface analysis of silicon nanowires using capacitance-voltage measurements Erik C. Garnett 1, Yu-Chih Tseng 4, Devesh Khanal 2,3, Junqiao Wu 2,3, Jeffrey
Zota, Cezar B.; Lindelow, Fredrik; Wernersson, Lars Erik; Lind, Erik
InGaAs tri-gate MOSFETs with record on-current Zota, Cezar B.; Lindelow, Fredrik; Wernersson, Lars Erik; Lind, Erik Published in: 6 IEEE International Electron Devices Meeting, IEDM 6 DOI:.9/IEDM.6.7886
Parameter Optimization Of GAA Nano Wire FET Using Taguchi Method
Parameter Optimization Of GAA Nano Wire FET Using Taguchi Method S.P. Venu Madhava Rao E.V.L.N Rangacharyulu K.Lal Kishore Professor, SNIST Professor, PSMCET Registrar, JNTUH Abstract As the process technology
Fin-Shaped Field Effect Transistor (FinFET) Min Ku Kim 03/07/2018
Fin-Shaped Field Effect Transistor (FinFET) Min Ku Kim 03/07/2018 ECE 658 Sp 2018 Semiconductor Materials and Device Characterizations OUTLINE Background FinFET Future Roadmap Keeping up w/ Moore s Law
III-V CMOS: Quo Vadis?
III-V CMOS: Quo Vadis? J. A. del Alamo, X. Cai, W. Lu, A. Vardi, and X. Zhao Microsystems Technology Laboratories Massachusetts Institute of Technology Compound Semiconductor Week 2018 Cambridge, MA, May
3-D Modelling of the Novel Nanoscale Screen-Grid Field Effect Transistor (SGFET)
3-D Modelling of the Novel Nanoscale Screen-Grid Field Effect Transistor (SGFET) Pei W. Ding, Kristel Fobelets Department of Electrical Engineering, Imperial College London, U.K. J. E. Velazquez-Perez
Week 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model
Week 9a OUTLINE MOSFET I vs. V GS characteristic Circuit models for the MOSFET resistive switch model small-signal model Reading Rabaey et al.: Chapter 3.3.2 Hambley: Chapter 12 (through 12.5); Section
A New Self-aligned Quantum-Well MOSFET Architecture Fabricated by a Scalable Tight-Pitch Process
A New Self-aligned Quantum-Well MOSFET Architecture Fabricated by a Scalable Tight-Pitch Process Jianqiang Lin, Xin Zhao, Tao Yu, Dimitri A. Antoniadis, and Jesús A. del Alamo Microsystems Technology Laboratories,
Fundamental Failure Mechanisms Limiting Maximum Voltage Operation in AlGaN/GaN HEMTs. Michael D. Hodge, Ramakrishna Vetury, and Jeffrey B.
Fundamental Failure Mechanisms Limiting Maximum Voltage Operation in AlGaN/GaN HEMTs Michael D. Hodge, Ramakrishna Vetury, and Jeffrey B. Shealy Purpose Propose a method of determining Safe Operating Area
Performance Evaluation of MISISFET- TCAD Simulation
Performance Evaluation of MISISFET- TCAD Simulation Tarun Chaudhary Gargi Khanna Rajeevan Chandel ABSTRACT A novel device n-misisfet with a dielectric stack instead of the single insulator of n-mosfet
Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;
Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known
NW-NEMFET: Steep Subthreshold Nanowire Nanoelectromechanical Field-Effect Transistor
NW-NEMFET: Steep Subthreshold Nanowire Nanoelectromechanical Field-Effect Transistor Jie Xiang Electrical and Computer Engineering and Materials Science Engineering University of California, San Diego
Lecture-45. MOS Field-Effect-Transistors Threshold voltage
Lecture-45 MOS Field-Effect-Transistors 7.4. Threshold voltage In this section we summarize the calculation of the threshold voltage and discuss the dependence of the threshold voltage on the bias applied
Lecture 31 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 25, 2007
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-1 Lecture 31 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 25, 2007 Contents: 1. Short-channel effects
Why Scaling? CPU speed Chip size R, C CPU can increase speed by reducing occupying area.
Why Scaling? Higher density : Integration of more transistors onto a smaller chip : reducing the occupying area and production cost Higher Performance : Higher current drive : smaller metal to metal capacitance
Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET
Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage
Comparative Study of Silicon and Germanium Doping-less Tunnel Field Effect Transistors
IJSTE - International Journal of Science Technology & Engineering Volume 2 Issue 5 November 2015 ISSN (online): 2349-784X Comparative Study of Silicon and Germanium Doping-less Tunnel Field Effect Transistors
EECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 11/01/2007 MOSFETs Lecture 5 Announcements HW7 set is due now HW8 is assigned, but will not be collected/graded. MOSFET Technology Scaling Technology
ANALYTICAL MODELING AND CHARACTERIZATION OF CYLINDRICAL GATE ALL AROUND MOSFET
ANALYTICAL MODELING AND CHARACTERIZATION OF CYLINDRICAL GATE ALL AROUND MOSFET Shailly Garg 1, Prashant Mani Yadav 2 1 Student, SRM University 2 Assistant Professor, Department of Electronics and Communication,
Three Terminal Devices
Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering
MODELLING OF NANOSCALE TUNNELLING FIELD EFFECT TRANSISTORS RAJAT VISHNOI
MODELLING OF NANOSCALE TUNNELLING FIELD EFFECT TRANSISTORS RAJAT VISHNOI DEPERTMENT OF ELECTRICAL ENGINEERING INDIAN INSTITUTE OF TECHNOLOGY DELHI MAY, 2016 Indian Institute of Technology Delhi (IITD),
Acknowledgments: This work was supported by Air Force HiREV program and the DTRA Basic Research Program.
Gate Bias and Geometry Dependence of Total-Ionizing-Dose Effects in InGaAs Quantum-Well MOSFETs K. Ni 1, E. X. Zhang 1, R. D. Schrimpf 1, D. M. Fleetwood 1, R. A. Reed 1, M. L. Alles 1, J. Lin 2, and J.
Towards Sub-10 nm Diameter InGaAs Vertical nanowire MOSFETs and TFETs
Towards Sub-10 nm Diameter InGaAs Vertical nanowire MOSFETs and TFETs J. A. del Alamo, X. Zhao, W. Lu, and A. Vardi Microsystems Technology Laboratories Massachusetts Institute of Technology 5 th Berkeley
INTERNATIONAL JOURNAL OF APPLIED ENGINEERING RESEARCH, DINDIGUL Volume 1, No 3, 2010
Low Power CMOS Inverter design at different Technologies Vijay Kumar Sharma 1, Surender Soni 2 1 Department of Electronics & Communication, College of Engineering, Teerthanker Mahaveer University, Moradabad
Tunneling Field Effect Transistors for Low Power ULSI
Tunneling Field Effect Transistors for Low Power ULSI Byung-Gook Park Inter-university Semiconductor Research Center and School of Electrical and Computer Engineering Seoul National University Outline
4: Transistors Non idealities
4: Transistors Non idealities Inversion Major cause of non-idealities/complexities: Who controls channel (and how)? Large Body(Substrate) Source Voltage V G V SB - - - - - - - - n+ n+ - - - - - - - - -
Session 10: Solid State Physics MOSFET
Session 10: Solid State Physics MOSFET 1 Outline A B C D E F G H I J 2 MOSCap MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor: Al (metal) SiO2 (oxide) High k ~0.1 ~5 A SiO2 A n+ n+ p-type Si (bulk)
UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences.
UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences Discussion #9 EE 05 Spring 2008 Prof. u MOSFETs The standard MOSFET structure is shown
Solid State Device Fundamentals
Solid State Device Fundamentals 4.4. Field Effect Transistor (MOSFET) ENS 463 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 4N101b 1 Field-effect transistor (FET)
CMOS Scaling Beyond FinFETs: Nanowires and TFETs
SEMATECH Symposium June 23, 2011 Tokyo Accelerating the next technology revolution CMOS Scaling Beyond FinFETs: Nanowires and TFETs Chris Hobbs, Wei-Yip Loh, Kerem Akarvardar, Paul Kirsch, and Raj Jammy
Empirical Model for Drain Induced Barrier Lowering in Nano Scale MOSFET
153 Empirical Model for Drain Induced Barrier Lowering in Nano Scale MOSFET Subhradip Das and Sudakshina Kundu Abstract - The effect of variation of oxide design parameters on the Drain Induced Barrier
Scaling of Vertical InAs GaSb Nanowire Tunneling Field-Effect Transistors on Si
Scaling of Vertical InAs GaSb Nanowire Tunneling Field-Effect Transistors on Si Memisevic, Elvedin; Svensson, Johannes; Hellenbrand, Markus; Lind, Erik; Wernersson, Lars-Erik Published in: IEEE Electron
III-V CMOS: the key to sub-10 nm electronics?
III-V CMOS: the key to sub-10 nm electronics? J. A. del Alamo Microsystems Technology Laboratories, MIT 2011 MRS Spring Meeting and Exhibition Symposium P: Interface Engineering for Post-CMOS Emerging
DESIGN OF 20 nm FinFET STRUCTURE WITH ROUND FIN CORNERS USING SIDE SURFACE SLOPE VARIATION
Journal of Electron Devices, Vol. 18, 2013, pp. 1537-1542 JED [ISSN: 1682-3427 ] DESIGN OF 20 nm FinFET STRUCTURE WITH ROUND FIN CORNERS USING SIDE SURFACE SLOPE VARIATION Suman Lata Tripathi and R. A.
Experiment 3. 3 MOSFET Drain Current Modeling. 3.1 Summary. 3.2 Theory. ELEC 3908 Experiment 3 Student#:
Experiment 3 3 MOSFET Drain Current Modeling 3.1 Summary In this experiment I D vs. V DS and I D vs. V GS characteristics are measured for a silicon MOSFET, and are used to determine the parameters necessary
CHAPTER 3 TWO DIMENSIONAL ANALYTICAL MODELING FOR THRESHOLD VOLTAGE
49 CHAPTER 3 TWO DIMENSIONAL ANALYTICAL MODELING FOR THRESHOLD VOLTAGE 3.1 INTRODUCTION A qualitative notion of threshold voltage V th is the gate-source voltage at which an inversion channel forms, which
EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)
EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 7-1 Simplest Model of MOSFET (from EE16B) 7-2 CMOS Inverter 7-3 CMOS NAND
NAME: Last First Signature
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 130: IC Devices Spring 2003 FINAL EXAMINATION NAME: Last First Signature STUDENT
Nanowire Tunnel Field Effect Transistors at High Temperature
Nanowire Tunnel Field Effect Transistors at High Temperature Márcio D. V. Martino 1, Felipe S. Neves 1, Paula G. D. Agopian 1, João A. Martino 1, Rita Rooyackers 2 and Cor Claeys 2,3 1 LSI / PSI / USP
Sub-30 nm InAs Quantum-Well MOSFETs with Self-Aligned Metal Contacts and Sub-1 nm EOT HfO 2 Insulator
Sub-30 nm InAs Quantum-Well MOSFETs with Self-Aligned Metal Contacts and Sub-1 nm EOT HfO 2 Insulator Jianqiang Lin, Dimitri A. Antoniadis, and Jesús A. del Alamo Microsystems Technology Laboratories,
Semiconductor TCAD Tools
Device Design Consideration for Nanoscale MOSFET Using Semiconductor TCAD Tools Teoh Chin Hong and Razali Ismail Department of Microelectronics and Computer Engineering, Universiti Teknologi Malaysia,
3: MOS Transistors. Non idealities
3: MOS Transistors Non idealities Inversion Major cause of non-idealities/complexities: Who controls channel (and how)? Large Body(Substrate) Source Voltage V G V SB - - - - - - - - n+ n+ - - - - - - -
Stanford University. Virtual-Source Carbon Nanotube Field-Effect Transistors Model. Quick User Guide
Stanford University Virtual-Source Carbon Nanotube Field-Effect Transistors Model Version 1.0.1 Quick User Guide Copyright The Board Trustees of the Leland Stanford Junior University 2015 Chi-Shuen Lee
Nanoscale III-V CMOS
Nanoscale III-V CMOS J. A. del Alamo Microsystems Technology Laboratories Massachusetts Institute of Technology SEMI Advanced Semiconductor Manufacturing Conference Saratoga Springs, NY; May 16-19, 2016
8. Characteristics of Field Effect Transistor (MOSFET)
1 8. Characteristics of Field Effect Transistor (MOSFET) 8.1. Objectives The purpose of this experiment is to measure input and output characteristics of n-channel and p- channel field effect transistors
Lecture 4. MOS transistor theory
Lecture 4 MOS transistor theory 1.7 Introduction: A MOS transistor is a majority-carrier device, in which the current in a conducting channel between the source and the drain is modulated by a voltage
Performance Modeling, Parameter Extraction Technique and Statistical Modeling of Nano-scale MOSFET for VLSI Circuit Simulation
Performance Modeling, Parameter Extraction Technique and Statistical Modeling of Nano-scale MOSFET for VLSI Circuit Simulation Dr. Soumya Pandit Institute of Radio Physics and Electronics University of
CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs)
CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs) INTRODUCTION - FETs are voltage controlled devices as opposed to BJT which are current controlled. - There are two types of FETs. o Junction FET (JFET) o Metal
Alternative Channel Materials for MOSFET Scaling Below 10nm
Alternative Channel Materials for MOSFET Scaling Below 10nm Doug Barlage Electrical Requirements of Channel Mark Johnson Challenges With Material Synthesis Introduction Outline Challenges with scaling
Transport properties of graphene nanoribbon-based tunnel
Transport properties of graphene nanoribbon-based tunnel Mark Cheung School of Engineering and Applied Science, Department of Electrical and Computer Engineering Keywords: Monolithic Graphene, Low-Power,
InGaAs MOSFETs for CMOS:
InGaAs MOSFETs for CMOS: Recent Advances in Process Technology J. A. del Alamo, D. Antoniadis, A. Guo, D.-H. Kim 1, T.-W. Kim 2, J. Lin, W. Lu, A. Vardi and X. Zhao Microsystems Technology Laboratories,
THRESHOLD VOLTAGE CONTROL SCHEMES
THRESHOLD VOLTAGE CONTROL SCHEMES IN FINFETS V. Narendar 1, Ramanuj Mishra 2, Sanjeev Rai 3, Nayana R 4 and R. A. Mishra 5 Department of Electronics & Communication Engineering, MNNIT-Allahabad Allahabad-211004,
MSE 410/ECE 340: Electrical Properties of Materials Fall 2016 Micron School of Materials Science and Engineering Boise State University
MSE 410/ECE 340: Electrical Properties of Materials Fall 2016 Micron School of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures
Record Extrinsic Transconductance (2.45 ms/μm at V DS = 0.5 V) InAs/In 0.53 Ga 0.47 As Channel MOSFETs Using MOCVD Source-Drain Regrowth
Record Extrinsic Transconductance (2.45 ms/μm at = 0.5 V) InAs/In 0.53 Ga 7 As Channel MOSFETs Using MOCVD Source-Drain Regrowth Sanghoon Lee 1*, C.-Y. Huang 1, A. D. Carter 1, D. C. Elias 1, J. J. M.
MOSFET Parasitic Elements
MOSFET Parasitic Elements Three MITs of the ay Components of the source resistance and their influence on g m and R d Gate-induced drain leakage (GIL) and its effect on lowest possible leakage current
EE70 - Intro. Electronics
EE70 - Intro. Electronics Course website: ~/classes/ee70/fall05 Today s class agenda (November 28, 2005) review Serial/parallel resonant circuits Diode Field Effect Transistor (FET) f 0 = Qs = Qs = 1 2π
Submitted to Electronics Letters, 1 May 1991 CALCULATION OF LATERAL DISTRIBUTION OF INTERFACE TRAPS ALONG AN MIS CHANNEL
Submitted to Electronics Letters, 1 May 1991 CALCULATION OF LATERAL DISTRIBUTION OF INTERFACE TRAPS ALONG AN MIS CHANNEL Albert K. Henning and Judith A. Dimauro* Thayer School of Engineering Dartmouth
SUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION doi:10.1038/nature11293 1. Formation of (111)B polar surface on Si(111) for selective-area growth of InGaAs nanowires on Si. Conventional III-V nanowires (NWs) tend to grow in
Design & Performance Analysis of DG-MOSFET for Reduction of Short Channel Effect over Bulk MOSFET at 20nm
RESEARCH ARTICLE OPEN ACCESS Design & Performance Analysis of DG- for Reduction of Short Channel Effect over Bulk at 20nm Ankita Wagadre*, Shashank Mane** *(Research scholar, Department of Electronics
Acknowledgements. Curriculum Vitæ. List of Figures. List of Tables. 1 Introduction Si MOSFET Scaling... 2
Contents Acknowledgements Curriculum Vitæ Abstract List of Figures List of Tables v vi viii xii xviii 1 Introduction 1 1.1 Si MOSFET Scaling......................... 2 2 General MOSFET Scaling Theory 7
Fundamentos de Electrónica Lab Guide
Fundamentos de Electrónica Lab Guide Field Effect Transistor MOS-FET IST-2016/2017 2 nd Semester I-Introduction These are the objectives: a. n-type MOSFET characterization from the I(U) characteristics.
INTRODUCTION: Basic operating principle of a MOSFET:
INTRODUCTION: Along with the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available whose Gate input is electrically insulated from the main current carrying
Performance Analysis of 20 nm Pentagonal and Trapezoidal NanoWire Transistor with Si and Ge Channel
Performance Analysis of 20 nm Pentagonal and Trapezoidal NanoWire Transistor with Si and Ge Channel SANDEEP SINGH GILL 1, JAIDEV KAUSHIK 2, NAVNEET KAUR 3 Department of Electronics and Communication Engineering
Design of 45 nm Fully Depleted Double Gate SOI MOSFET
Design of 45 nm Fully Depleted Double Gate SOI MOSFET 1. Mini Bhartia, 2. Shrutika. Satyanarayana, 3. Arun Kumar Chatterjee 1,2,3. Thapar University, Patiala Abstract Advanced MOSFETS such as Fully Depleted
FET. Field Effect Transistors ELEKTRONIKA KONTROL. Eka Maulana, ST, MT, M.Eng. Universitas Brawijaya. p + S n n-channel. Gate. Basic structure.
FET Field Effect Transistors ELEKTRONIKA KONTROL Basic structure Gate G Source S n n-channel Cross section p + p + p + G Depletion region Drain D Eka Maulana, ST, MT, M.Eng. Universitas Brawijaya S Channel
Compact Modeling of Silicon Carbide Lateral FETs for High Temperature Analog and Digital Circuits
Compact Modeling of Silicon Carbide Lateral FETs for High Temperature Analog and Digital Circuits Avinash S. Kashyap Cheng-Po Chen Vinayak Tilak GE Global Research Center 12/7/2011 Overview Program Objectives:
Alternatives to standard MOSFETs. What problems are we really trying to solve?
Alternatives to standard MOSFETs A number of alternative FET schemes have been proposed, with an eye toward scaling up to the 10 nm node. Modifications to the standard MOSFET include: Silicon-in-insulator
MOS Capacitance and Introduction to MOSFETs
ECE-305: Fall 2016 MOS Capacitance and Introduction to MOSFETs Professor Peter Bermel Electrical and Computer Engineering Purdue University, West Lafayette, IN USA pbermel@purdue.edu 11/4/2016 Pierret,
Solid State Devices- Part- II. Module- IV
Solid State Devices- Part- II Module- IV MOS Capacitor Two terminal MOS device MOS = Metal- Oxide- Semiconductor MOS capacitor - the heart of the MOSFET The MOS capacitor is used to induce charge at the
Future MOSFET Devices using high-k (TiO 2 ) dielectric
Future MOSFET Devices using high-k (TiO 2 ) dielectric Prerna Guru Jambheshwar University, G.J.U.S. & T., Hisar, Haryana, India, prernaa.29@gmail.com Abstract: In this paper, an 80nm NMOS with high-k (TiO
Lecture #29. Moore s Law
Lecture #29 ANNOUNCEMENTS HW#15 will be for extra credit Quiz #6 (Thursday 5/8) will include MOSFET C-V No late Projects will be accepted after Thursday 5/8 The last Coffee Hour will be held this Thursday
Analog Circuits and Systems
Analog Circuits and Systems Prof. K Radhakrishna Rao Lecture 10: Electronic Devices for Analog Circuits 1 Multipliers Multipliers provide multiplication of two input voltages or currents Multipliers can
BJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
Scaling of InGaAs MOSFETs into deep-submicron regime (invited)
Scaling of InGaAs MOSFETs into deep-submicron regime (invited) Y.Q. Wu, J.J. Gu, and P.D. Ye * School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47906 * Tel: 765-494-7611,
EE 2274 MOSFET BASICS
Pre Lab: Include your CN with prelab. EE 2274 MOSFET BASICS 1. Simulate in LTspice a family of output characteristic curves (cutve tracer) for the 2N7000 NMOS You will need to add the 2N7000 model to LTspice
Gate-Length and Drain-Bias Dependence of Band-To-Band Tunneling (BTB) Induced Drain Leakage in Irradiated Fully Depleted SOI Devices
Gate-Length and Drain-Bias Dependence of Band-To-Band Tunneling (BTB) Induced Drain Leakage in Irradiated Fully Depleted SOI Devices F. E. Mamouni, S. K. Dixit, M. L. McLain, R. D. Schrimpf, H. J. Barnaby,
45nm Bulk CMOS Within-Die Variations. Courtesy of C. Spanos (UC Berkeley) Lecture 11. Process-induced Variability I: Random
45nm Bulk CMOS Within-Die Variations. Courtesy of C. Spanos (UC Berkeley) Lecture 11 Process-induced Variability I: Random Random Variability Sources and Characterization Comparisons of Different MOSFET
Field Effect Transistors
Field Effect Transistors LECTURE NO. - 41 Field Effect Transistors www.mycsvtunotes.in JFET MOSFET CMOS Field Effect transistors - FETs First, why are we using still another transistor? BJTs had a small
ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha
ECE520 VLSI Design Lecture 2: Basic MOS Physics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture Semiconductor
FUNDAMENTALS OF MODERN VLSI DEVICES
19-13- FUNDAMENTALS OF MODERN VLSI DEVICES YUAN TAUR TAK H. MING CAMBRIDGE UNIVERSITY PRESS Physical Constants and Unit Conversions List of Symbols Preface page xi xiii xxi 1 INTRODUCTION I 1.1 Evolution
Beyond Transistor Scaling: New Devices for Ultra Low Energy Information Processing
Beyond Transistor Scaling: New Devices for Ultra Low Energy Information Processing Prof. Tsu Jae King Liu Department of Electrical Engineering and Computer Sciences University of California, Berkeley,
EJERCICIOS DE COMPONENTES ELECTRÓNICOS. 1 er cuatrimestre
EJECICIOS DE COMPONENTES ELECTÓNICOS. 1 er cuatrimestre 2 o Ingeniería Electrónica Industrial Juan Antonio Jiménez Tejada Índice 1. Basic concepts of Electronics 1 2. Passive components 1 3. Semiconductors.
Simulation of N-type MOSFETs and Tunneling Field-Effect Transistors
Simulation of N-type MOSFETs and Tunneling Field-Effect Transistors by Zhixin Alice Ye Supervisor: Sorin Voinigescu April 2015 Abstract Simulation of N-type MOSFETs and Tunneling Field-Effect Transistors
InAs Quantum-Well MOSFET for logic and microwave applications
AWAD June 29 th 2012 Accelerating the next technology revolution InAs Quantum-Well MOSFET for logic and microwave applications T.-W. Kim, R. Hill, C. D. Young, D. Veksler, L. Morassi, S. Oktybrshky 1,
EFM Ec. a) Sketch the electrostatic potential inside the semiconductor as a function of position.
1.The energy band diagram for an ideal x o =.2um MOS-C operated at T=300K is shown below. Note that the applied gate voltage causes band bending in the semiconductor such that E F =E i at the Si-SiO2 interface.
CHAPTER 2 LITERATURE REVIEW
CHAPTER 2 LITERATURE REVIEW 2.1 Introduction of MOSFET The structure of the MOS field-effect transistor (MOSFET) has two regions of doping opposite that of the substrate, one at each edge of the MOS structure
Lecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and
Lecture 16: MOS Transistor models: Linear models, SPICE models Context In the last lecture, we discussed the MOS transistor, and added a correction due to the changing depletion region, called the body
ET Training. Electronics: JFET Instructor: H.Pham. The JUNCTION FIELF EFFECT TRANSISTOR (JFET) n channel JFET p channel JFET
The JUNCTION FIELF EFFECT TRANSISTOR (JFET) n channel JFET p channel JFET 1 The BIASED JFET VDD provides a drain-to-source voltage and supplies current from drain to source VGG sets the reverse-biased
Fabrication and Characterization of Pseudo-MOSFETs
Fabrication and Characterization of Pseudo-MOSFETs March 19, 2014 Contents 1 Introduction 2 2 The pseudo-mosfet 3 3 Device Fabrication 5 4 Electrical Measurement and Characterization 7 5 Writing your Report
Investigation of Feasibility of Tunneling Field Effect Transistor (TFET) as Highly Sensitive and Multi-sensing Biosensors
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.17, NO.1, FEBRUARY, 2017 ISSN(Print) 1598-1657 https://doi.org/10.5573/jsts.2017.17.1.141 ISSN(Online) 2233-4866 Investigation of Feasibility of Tunneling
Low-Frequency Noise in TFETs
Lund University Master Thesis Low-Frequency Noise in TFETs Author: Markus Hellenbrand Supervisor: Prof. Lars-Erik Wernersson A thesis submitted in partial fulfilment of the requirements for the degree
A novel GAAC FinFET transistor: device analysis, 3D TCAD simulation, and fabrication
Vol.30, No.1 Journal of Semiconductors January 2009 A novel GAAC FinFET transistor: device analysis, 3D TCAD simulation, and fabrication Xiao Deyuan( 肖德元 ) 1,2,, Wang Xi( 王曦 ) 1, Yuan Haijiang( 袁海江 ) 3,
Leakage Modeling for Devices with Steep Sub-threshold Slope Considering Random Threshold Variations
Leakage Modeling for Devices with Steep Sub-threshold Slope Considering Random Threshold Variations Ayan Paul, Chaitanya Kshirsagar, Sachin S. Sapatnekar, Steven Koester and Chris H. Kim Electrical and