IR4007K. Switched Mode Power Supply IC
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- Meghan Park
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1 ADANCE INFORMATION Data SheetNo. PD608 IR007K Descriptions The IR007 is a dual mode voltage and current controller combined with a MOSFET in a single Package. The IR007 is designed for use in AC/DC and DC/DC switching power supplies upto 00DC nominal input. The device can operate in either a quasi-resonant or Pulse Ratio Control (PRC) mode, and thereby variable frequency operation. Switched Mode Power Supply IC Features Primary current mode control, and secondary voltage mode control cc Over-voltage protection (latched) Over-current & over-temperature protection Quasi resonant, variable frequency operation pin TO6 package 0.Ω Rds(on) max/ 00 MOSFET Fully Characterized Avalanche Energy Typical Connection Diagram in (AC/ DC) out (DC) Drain cc IR007K FB Source Gnd *Please note that this datasheet contains advance information which could change before the product is released to production.
2 IR007 ADANCE INFORMATION Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Terminals Max. Ratings Units Note I D peak Peak drain current - 0 Single pulse I D max Maximum switching current -.0 A - = 0.78 Tc= o C E AS Single pulse avalanche energy - 00 mj dd=0,l=0mh, Tc= o C CC Power supply voltage - TH OCP/FB terminal voltage - 6 P D Power dissipation for MOSFET TBA With infinite heatsink - TBA W Without heatsink P D Power dissipation for control part (MIC) Specified by IN x I IN Rth JC Thermal resistance, junction to case.7 C/W T J Junction temperature --0 T S Storage temperature -0- T f Internal frame temperature in operation -0- C Refer to recommended operating temperature T OP Ambient operating temperature -0- T L Lead temp. (soldering, 0 seconds) 00 Recommended Operating Conditions Time for input of quasi resonant signals. For the Quasi resonant signal inputted to the DCP/FB terminal at the time of quasi resonant operation, the signal should be wider thant Tth() OCP/FB Tth().0µ s th()
3 ADANCE INFORMATION IR007 Electrical Characteristics (for Control IC) CC = 8, (T A = C) unless otherwise specified. Symbol Definition Min. Typ. Max. Units Test Conditions CCU+ CC supply undervoltage positive going threshold CCU- CC supply undervoltage negative going threshold 9 0 I QCCU ULO mode quiescent current 00 µa CC < CCU+ I QCC Quiescent operating CC supply current 0 ma T OFF/(MAX) Maximum OFF time T TH() Minimum input pulse width for quasi resonant signals.0 µsec T OFF/(MIN) Minimum OFF time. TH() OCP/FB terminal threshold voltage TH() OCP/FB terminal threshold voltage...6 I OCP/FB OCP/FB terminal sink current... ma CC(OP) CC overvoltage protection limit 0... I CC(LA) Latch circuit holding current 00 µa CC(LaOFF) Latch circuit reset voltage T J(TSD) Thermal shutdown activation temperature 0 o C Electrical Characteristics (for MOSFET) (T A = C) unless otherwise specified. Symbol Definition Min. Typ. Max. Units Test Conditions DSS Drain-to-source breakdown voltage 00 I DSS Drain leakage current 0 µa ds=60, CC =0 Tj = o C R DS(ON) On-resistance 0. Ω - =0, I D =A tr Rise time (0% to 90%) 00 ns THj-C Thermal resistance.7 o C/W Between junction and case
4 IR007 ADANCE INFORMATION Block Diagram cc START O..P LATCH D REG. DRIE T.S.D OSCILLATOR - + Comp. th() S OCP/ FB - + Comp. th() Ground Lead Assignments Pin # Symbol Description S MOSFET Source terminal Ground Ground terminal D MOSFET Drain terminal cc Control circuit supply voltage OCP/FB Overcurrent detection, and oltage mode control feedback signal Other Functions O..P. Overvoltage Protection Circuit T.S.D. Thermal Shutdown Circuit
5 ADANCE INFORMATION IR007 IR WORLD HEADQUARTERS: Kansas St., El Segundo, California 90 Tel: (0) -70 IR EUROPEAN REGIONAL CENTRE: 9/ Godstone Rd., Whyteleafe, Surrey CR 0BL, United Kingdom Tel: ++ (0) IR JAPAN: K&H Bldg., F, 0- Nishi-Ikebukuro -Chome, Toshima-Ku, Tokyo, Japan 7-00 Tel: IR HONG KONG: Unit 08, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon Hong Kong Tel: (8) Data and specifications subject to change without notice. 0/9/000
IRIS4007 INTEGRATED SWITCHER. Features. Packages
Data Sheet No. PD608-C Features Primary current mode control, and secondary voltage mode control Vcc over-voltage protection (latched) Over-current and over-temperature protection Quasi resonant, variable
IRIS4015 INTEGRATED SWITCHER. Features. Packages
Data SheetNo. PD6090-C Features Primary current mode control, and secondary voltage mode control Vcc Over-voltage protection (latched) Over-current & over-temperature protection Quasi resonant, variable
HIGH VOLTAGE HALF BRIDGE
Preliminary Data Sheet No. PD0-C IR0HDC0U-P HIGH LTAGE HALF BRIDGE Features Output Power IGBT s in half-bridge configuration 00V rated breakdown voltage High side gate drive designed for bootstrap operation
FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No. PD 60068-I FULLY PROTECTED POWER MOSFET SWITCH Features Controlled slew rate reduces EMI Over temperature protection with auto-restart Linear current-limit protection Active drain-to-source
IPS5451/IPS5451S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Data Sheet No.PD6159-K FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Over current shutdown Active clamp E.S.D protection Status feedback Open load detection
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
Data Sheet 60049- IR6220 (NOTE: For new designs, we recommend IR s new products IPS521 and IPS521S) INTEIGENT IG SIDE MOSFET POWER SWITC Features PWM current limit for short circuit protection Over-temperature
IPS0151/IPS0151S FULLY PROTECTED POWER MOSFET SWITCH. Load
Data Sheet No.PD644H FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The are fully
IPS031/IPS031S FULLY PROTECTED POWER MOSFET SWITCH. Product Summary
Data Sheet No.PD 5H FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The are fully
IR2105 HALF BRIDGE DRIVER. Features. Product Summary. Packages. Description. Typical Connection
Features Floating channel designed for bootstrap operation Fully operational to +6V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from to 2V Undervoltage lockout V Schmitt-triggered
IPS022G/IPS024G DUAL/QUAD FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 69-I DUAL/QUAD FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The
IRIS-W INTEGRATED SWITCHER
Features 6pin SIP type full molded package, optimum IC for lowheight SMPS, distance between high and low voltage pins is 1.8 mm with pin elimination. Oscillator is provided on the monolithic control with
IR2153Z PD SELF-OSCILLATING HALF-BRIDGE DRIVER. Features. Product Summary
Features Floating channel designed for bootstrap operation Fully operational to +600 Tolerant to negative transient voltage d/dt immune Undervoltage lockout Programmable oscillator frequency 1 f = 1.4
IR2172 LINEAR CURRENT SENSING IC. Features. Product Summary
Features Floating channel up to +00V Monolithic integration Linear current feedback through shunt resistor Direct digital PWM output for easy interface Low IQBS allows the boot strap power supply Independent
IPS521/IPS521S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Preliminary Data Sheet No.PD 60158-G IPS521/IPS521S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features Over temperature protection (with auto-restart) Short-circuit protection (current limit) Active
SMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 9399A IRFR9N20D IRFU9N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.38Ω 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching
SMPS MOSFET. V DSS R DS(on) max I D
PD - 93935B SMPS MOSFET IRFR3708 IRFU3708 Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer
Parameter Min. Typ. Max. Units Conditions. µa DS = 200V, V GS = 0V 250 V DS = 160V, V GS = 0V, T J = 150 C
HEXFET Power MOSFET V DSS = 200V R DS(on) = 0.5Ω Description I D = 8A Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 8 I D @ T C = 0 C Continuous Drain
IRIS-G5653 INTEGRATED SWITCHER. Features. Typical Connection Diagram. Data Sheet No. PD 96944A. Package Outline. Key Specifications
Data Sheet No. PD 96944A Features Oscillator is provided on the monolithic control with adopting OnChip Trimming technology. INTEGRATED SWITCHER Package Outline Small temperature characteristics variation
NTE7224 Integrated Circuit Quasi Resonant Topology Primary Switching Regulator
NTE7224 Integrated Circuit Quasi Resonant Topology Primary Switching Regulator Description: The NTE7224 is a quasi resonant topology integrated circuit in a 7 Lead TO220 type package designed for SMPS
SMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD-93772A HEXFET Power MOSFET V DSS Rds(on) max I D 400V.0Ω 5.5A Benefits l Low Gate
SMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94114 IRFB42N20D IRFS42N20D IRFSL42N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.055Ω 42.6A Benefits l Low Gate-to-Drain Charge
IRF7555. HEXFET Power MOSFET V DSS = -20V. R DS(on) = 0.055Ω
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (
1 = D 2 = S 3 = S 4 = G
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
IPS021L FULLY PROTECTED POWER MOSFET SWITCH
Preliminary Data Sheet No.PD 65-G IPSL FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description
IPS0151/IPS0151S FULLY PROTECTED POWER MOSFET SWITCH. Load
Preliminary Data Sheet No.PD 644-G IPS5/IPS5S FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection
Type IRIS-G6351S Ω
Data Sheet No. PD 9694A Features Oscillator is provided on the monolithic control with adopting OnChip Trimming technology. INTEGRATED SWITCHER Package Outline Small temperature characteristics variation
IPS031/IPS031S FULLY PROTECTED POWER MOSFET SWITCH. Product Summary R ds(on)
Preliminary Data Sheet No.PD 5-G IPS3/IPS3S FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description
IRFDC20. HEXFET Power MOSFET PD V DSS = 600V. R DS(on) = 4.4Ω I D = 0.32A
HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements PD -9.1228 IRFDC20 V DSS = 600V R
IRF V, N-CHANNEL
PD - 90518 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF360 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF360 400V 0.20Ω 25A The HEXFET technology
HIGH AND LOW SIDE DRIVER. Product Summary VOFFSET VOUT. Description
Features n Floating channel designed for bootstrap operation Fully operational to +4V Tolerant to negative transient voltage dv/dt immune n Gate drive supply range from 1 to 2V n Undervoltage lockout for
IRF9240 THRU-HOLE (TO-204AA/AE) Absolute Maximum Ratings. Features: 1 PD REPETITIVE AVALANCHE AND dv/dt RATED.
PD - 90420 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF9240 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9240-200V 0.5Ω -11A The HEXFET technology
SELF-OSCILLATING HALF BRIDGE
Features Output Power MOSFETs in half-bridge configuration High side gate drive designed for bootstrap operation Bootstrap diode integrated into package (HD type) Accurate timing control for both Power
D-Pak I-Pak up to 1.5 watts are possible in typical surface mount
l Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Seventh Generation HEXFET Power MOSFETs from
IRF7342. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω SO-8. Thermal Resistance. 1 PD Top View
l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from
SMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD- 92005 HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits l Low
IRFF110 JANTXV2N V, N-CHANNEL. Absolute Maximum Ratings. Features: 1 PD C. REPETITIVE AVALANCHE AND dv/dt RATED
PD - 90423C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V.60Ω 3.5A IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556
IPS022G/IPS024G DUAL/QUAD FULLY PROTECTED POWER MOSFET SWITCH
Preliminary Data Sheet No.PD 69-G IPSG/IPSG DUAL/QUAD FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection
HIGH VOLTAGE HALF BRIDGE
Preliminary Data Sheet No. PD0-D IR0HDC0U-P HIGH LTAGE HALF BRIDGE Features Output Power IGBT s in half-bridge configuration 55V rated breakdown voltage High side gate drive designed for bootstrap operation
SMPS MOSFET. V DSS R DS(on) max I D
PD- 9385A SMPS MOSFET IRFR8N5D IRFU8N5D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to Reduce Switching Losses
HIGH AND LOW SIDE DRIVER
Data Sheet No. PD-O Features Floating channel designed for bootstrap operation Fully operational to +V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from to V Undervoltage
IRL3102S. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013W I D = 61A PRELIMINARY
l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically
IR3101 Series 1.6A, 500V
Half-Bridge FredFet and Integrated Driver Features Output power FredFets in half-bridge configuration High side gate drive designed for bootstrap operation Bootstrap diode integrated into package. Lower
C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
PD -91656C INSULATED GATE BIPOLAR TRANSISTOR IRG4PC40W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve
IRG4BH20K-S PD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features V CES = 1200V. V CE(on) typ. = 3.17V.
INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, t sc =µs @ V CC = 720V, T J = 25 C, Combines low conduction losses with high switching speed Latest generation
IPS511/IPS511S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Preliminary Data Sheet No.PD 60155-G IPS511/IPS511S FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Short-circuit protection (current limit ) Active clamp
C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD - 9790 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30W-S Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve
IRFZ44ES/L. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.023Ω I D = 48A PRELIMINARY
l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
IRF630N IRF630NS IRF630NL. HEXFET Power MOSFET V DSS = 200V. R DS(on) = 0.30Ω I D = 9.3A
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
IR2122(S) CURRENT SENSING SINGLE CHANNEL DRIVER
Preliminary Data Sheet No. PD60130-K CURRENT SENSING SINGLE CHANNEL DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dv/dt
FEATURES. ABSOLUTE MAXIMUM RATINGS at T A. Quasi-Resonant Operation Output Power to 120 W Low-Loss, Pulse-Ratio-Control Standby Mode = +25 C
28102.9* Data Sheet QUASI-RESONANT FLYBACK The STR-G6653 is specifically designed to satisfy the requirements for increased integration and reliability in off-line quasi-resonant flyback converters. This
IRG4PC40K Short Circuit Rated UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR PD - 9.585B IRG4PC40K Short Circuit Rated UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit
IPS1051LPbF / IPS1052GPbF
Data Sheet No. PD60298_B SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized
IRFZ48R. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.018Ω I D = 50*A. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio
Maximum Power Dissipation W C
PD- 57A INSULATED GATE BIPOLAR TRANSISTOR GA2SA6S Standard Speed IGBT Features C Standard : Optimized for minimum saturation voltage and low operating frequencies up to khz Lowest conduction losses available
IRG4PH30K PD A. Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. n-channel. Features V CES = 1200V. V CE(on) typ. = 3.
PD -9580A IRG4PH30K INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, t sc =µs, V CC = 720V, T J = 25 C, Combines low conduction losses with high switching
IPS0551T FULLY PROTECTED POWER MOSFET SWITCH. L oad. Product Summary
Data Sheet No. PD616-C FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The is a fully
SMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
IR3312(S) PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH
Data Sheet No.PD60211 rev.d IR3312(S) PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp E.S.D protection Input referenced to Vcc
SMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification
STR-G6651 OFF-LINE QUASI-RESONANT FLYBACK SWITCHING REGULATOR FEATURES
28102.9A Data Sheet QUASI-RESONANT FLYBACK 1 DRAIN Dwg. PK-011 OSC. 2 SOURCE UVLO OVP TSD 3 GROUND LATCH OVERCURRENT & FEEDBACK ABSOLUTE MAXIMUM RATINGS at T A = 25 C Control Supply Voltage, V IN.......
IPS024G QUAD FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD6 IPSG QUAD FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPSG
SMPS MOSFET. V DSS R DS(on) max I D
Benefits l Applications l l Ultra-Low Gate Impedance SMPS MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use High Frequency Buck Converters for
IPS5751/IPS5751S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Data Sheet No.PD6197 IPS5751/IPS5751S FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Over current shutdown Active clamp E.S.D protection Status feedback
SMPS MOSFET. V DSS Rds(on) max I D
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
IR2106/IR21064 IR2107/IR21074 HIGH AND LOW SIDE DRIVER
Features Floating channel designed for bootstrap operation Fully operational to +00V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from 0 to 0V Undervoltage lockout for both
V DSS = -60V. R DS(on) = 0.50Ω I D = -1.8A SOT-223. Absolute Maximum Ratings. Thermal Resistance. HEXFET Power MOSFET
HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel l Fast Switching l Ease of Paralleling l Lead-Free Description Third Generation
SMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
PROGRAMMABLE CURRENT SENSE HIGH SIDE SWITCH
Data Sheet No. PD60283 revb PROGRAMMABLE CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced to Vcc Over temperature
IRIS-A6131 INTEGRATED SWITCHER. Features Small sized 8-pin DIP type full molded package, optimum IC for lowheight
Data Sheet No. PD 96932A Features Small sized 8pin DIP type full molded package, optimum IC for lowheight SMPS Offtimer circuit is provided on the monolithic control IC Low startup circuit current (ua
IRFB260NPbF HEXFET Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
IPS042G DUAL FULLY PROTECTED POWER MOSFET SWITCH. Product Summary
Data Sheet No.PD 653-J IPS4G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description
Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
IPS021S FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 648-K IPS(S) FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary
V DSS R DS(on) max I D
PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
IPS031G/IPS032G SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH. Product Summary
Data Sheet No.PD 5-J SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The
PRELIMINARY. C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD - 9.629 PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses
IR2112(S) HIGH AND LOW SIDE DRIVER. Features. Product Summary. Packages. Description. Typical Connection V OFFSET. 600V max. 200 ma / 420 ma 10-20V
Features Floating channel designed for bootstrap operation Fully operational to +V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from 1 to 2V Undervoltage lockout for both
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
HVIC TM. Single Low-Side Driver IC IRS44273LPBF. Product Summary
PBF HVIC TM Features CMOS Schmitt-triggered inputs Under voltage lockout 3.3V logic compatible Output in phase with input Leadfree, RoHS compliant Typical Applications General Purpose Gate Driver DC-DC
IPS1031(S)(R)PbF INTELLIGENT POWER LOW SIDE SWITCH. Product Summary
Data Sheet No. PD60237 revd IPS1031(S)(R)PbF INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized
SMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
Base part number Package Type Standard Pack Orderable Part Number. IRFP7530PbF TO-247 Tube 25 IRFP7530PbF I D, T J = 25 C 50
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
A I DM Pulsed Drain Current 10 P C = 25 C Power Dissipation 2.0
l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs
V OFFSET. Description
Features n Floating channel designed for bootstrap operation Fully operational to +6V Tolerant to negative transient voltage dv/dt immune n Gate drive supply range from 1 to 2V n Undervoltage lockout for
SMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. SMPS MOSFET PD 984A IRFSL9N60A HEXFET Power
IPS1051LPbF / IPS1052GPbF
Data Sheet No. PD60298_B IPS1051LPbF / IPS1052GPbF SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level
Approved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
IPS031S FULLY PROTECTED POWER MOSFET SWITCH. Product Summary
Data Sheet No.PD 65-J FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS3/IPS3S
SMPS MOSFET. V DSS R DS(on) max I D
Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
SMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
HIGH SPEED, 100V, SELF OSCILLATING 50% DUTY CYCLE, HALF-BRIDGE DRIVER
Data Sheet No. 60206 HIGH SPEED, 100V, SELF OSCILLATING 50% DUTY CYCLE, HALF-BRIDGE DRIVER Features Simple primary side control solution to enable half-bridge DC-Bus Converters for 48V distributed systems
StrongIRFET IRFB7546PbF
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
Application Note AN-1018
Application Note AN-1018 Using The IRIS40xx Series Integrated Switchers By Jonathan Adams Table of Contents Page Part Selection Table...1 Introduction...1 Features...2 Block Diagrams...3 Startup Circuit
SMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD- 93805B IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.082Ω 31A Benefits l Low Gate-to-Drain Charge to
V DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
TO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
V DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
SMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
IRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
StrongIRFET IRL40B215
I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier