STR-G6651 OFF-LINE QUASI-RESONANT FLYBACK SWITCHING REGULATOR FEATURES

Transcription

1 A Data Sheet QUASI-RESONANT FLYBACK 1 DRAIN Dwg. PK-011 OSC. 2 SOURCE UVLO OVP TSD 3 GROUND LATCH OVERCURRENT & FEEDBACK ABSOLUTE MAXIMUM RATINGS at T A = 25 C Control Supply Voltage, V IN V Drain-Source Voltage, V DS V Drain Current, I D continuous A single-pulse, t w 1 ms A Avalanche Energy, E AS single-pulse mj Over-Current Protection Voltage Range, V OCP V to 6 V Insulation RMS Voltage, V WM(RMS) V Package Power Dissipation, P D control (V IN x I IN(ON) ) W total See Graph FET Channel Temperature, T J C Internal Frame Temperature, T F C Operating Temperature Range, T A C to 125 C Storage Temperature Range, T S C to 125 C VIN 4 SUPPLY FDBK OCP 5 The is specifically designed to satisfy the requirements for increased integration and reliability in off-line quasi-resonant flyback converters. This device incorporates the primary control and drive circuit with a discrete avalanche-rated power MOSFET. Cycle-by-cycle current limiting, under-voltage lockout with hysteresis, over-voltage protection, and thermal shutdown protects the power supply during the normal overload and fault conditions. Over-voltage protection and thermal shutdown are latched after a short delay. The latch may be reset by cycling the input supply. Low-current startup and a low-power standby mode selected from the secondary circuit completes a comprehensive suite of features. The device is provided in a five-pin over-molded TO-220 style package, affording dielectric isolation without compromising thermal characteristics. Two lead forms are available (with and without the suffix -LF ) to accommodate printed wiring board layout or mechanical constraints. Proven in substantial volumes, the is a robust low-risk solution for off-line power supplies particularly where management of EMI at the source is a significant element of the system design. FEATURES Quasi-Resonant Operation Output Power to 66 W Low-Loss, Pulse-Ratio-Control Standby Mode Temperature-Compensated Pulse-by-Pulse Over-Current Protection Latched Over-Voltage and Thermal Protection Under-Voltage Lockout with Hysteresis Active Low-Pass Filter for Enhanced Light-Load Stability Switched Attenuation of Leading-Edge Current-Sensing Signal Regulated Soft Gate Drive Adjustable Switching Speed for EMI Control Overmolded Five-Pin Package Always order by complete part number:.

2 FUNCTIONAL BLOCK DIAGRAM V IN 4 DRIVE REG. UVLO OVER-VOLT. PROTECT R FAULT LATCH 1 2 DRAIN SOURCE REF. S Q TSD OSC 1.35 ma 1.45 V 0.73 V 5 FEEDBACK & OVER-CURRENT PROTECTION 3 GROUND Dwg. FK ALLOWABLE PACKAGE POWER DISSIPATION MAXIMUM SAFE OPERATING AREA ALLOWABLE PACKAGE POWER DISSIPATION in WATTS W 1.5 W 0.8 W MOUNTING SURFACE TEMPERATURE FREE AIR CONTROLLER TEMPERATURE in C LIMITED BY FRAME TEMP. = 125 C MAX. 140 Dwg. GK DRAIN CURRENT in AMPERES LIMITED BY rds(on) NO HEAT SINK NATURAL COOLING TA = 25 C tw = 0.1 ms SINGLE PULSE tw = 1 ms SINGLE PULSE DRAIN-SOURCE VOLTAGE in VOLTS LIMITED BY VDS max 1000 Dwg. GK Northeast Cutoff, Box Worcester, Massachusetts (508) Copyright 1999, 2000 Allegro MicroSystems, Inc.

3 ELECTRICAL CHARACTERISTICS at T A = 25 C, V IN = 18 V, V DD = 10 V, V S = 0, voltage measurements are referenced to ground terminal (unless otherwise specified). Limits Characteristic Symbol Test Conditions Min. Typ. Max. Units On-State Voltage V INT Turn-on, increasing V IN V Under-Voltage Lockout V INQ Turn-off, decreasing V IN V Over-Voltage Threshold V OVP(th) Turn-off, increasing V IN V Drain-Source Breakdown Voltage V (BR)DSS I D = 300 µa 650 V Drain Leakage Current I DSS V DS = 650 V 300 µa On-State Resistance r DS(on) V S = 10 V, I D = 0.9 A, T J = 25 C 3.95 Ω Maximum OFF Time t off Drain waveform high µs Minimum Pulse Duration for Input of Quasi-Resonant Signals t w(th) Drain waveform high µs Minimum OFF Time t off Drain waveform high µs Feedback Threshold Voltage V FDBK Drain waveform low to high V Oscillation synchronized V Over-Current Protection/Feedback Sink Current I OCP/FB V OCP/FB = 1.0 V ma Latch Holding Current I IN(OVP) V IN reduced from 24.5 V to 8.5 V 400 ma Latch Release Voltage V IN I IN 20 µa, V IN reduced from 24.5 V V Switching Time t f V DD = 200 V, I D = 0.9 A 250 ns Supply Current I IN(ON) Operating 3 30 ma I IN(OFF) Increasing V IN prior to oscillation 100 µa Insulation RMS Voltage V WM(RMS) All terminals simultaneous refer V ence metal plate against backside Thermal Shutdown T J 140 C Thermal Resistance R θjm Output junction-to-mounting frame 1.63 C/W Notes: Typical Data is for design information only. 1. Feedback is square wave, V IM = 2.2 V, t h = 1 µs, t l = 35 µs 2. For quasi-resonant operation, the input signal must be longer than t w(th) and greater than V FDBK 3. Feedback is square wave, V IM = 2.2 V, t h = 4 µs, t l = 1 µs

4 ALLOWABLE AVALANCHE ENERGY 200 ALLOWABLE AVALANCHE ENERGY in mj SINGLE PULSE DRAIN CURRENT = 1.8 A STARTING CHANNEL TEMPERATURE in C Dwg. GK STR-G6600 Series Drain-Source Drain-Source Output Breakdown Voltage ON Resistance at I D = 300 µa at I D = 0.9 A Part Number V (BR)DS, Minimum r DS(on), Maximum Output Power For 100/120 V AC Input STR-G V 2.18 Ω 44 W 60 W STR-G V 0.92 Ω 98 W 130 W For 110/120 V AC Input STR-G V 2.62 Ω 36 W 50 W For 200/220 V AC Input 650 V 3.95 Ω 66 W STR-G V 2.80 Ω 86 W STR-G V 1.95 Ω 120 W 115 Northeast Cutoff, Box Worcester, Massachusetts (508)

5 TYPICAL CONVERSION USING WARNING: lethal potentials are present. See text. OUTPUT 4 DRIVE REG. UVLO R 1 AC INPUT FULL-BRIDGE RECTIFIER REF. TSD OVER-VOLT. PROTECT S FAULT LATCH Q OSC 2 VOLTAGE SENSE OUTPUT 1.35 ma 1.45 V V 3 Dwg. EK-003-4A WARNING These devices are designed to be operated at lethal voltages and energy levels. Circuit designs that embody these components must conform with applicable safety requirements. Precautions must be taken to prevent accidental contact with power-line potentials. Do not connect grounded test equipment. The use of an isolation transformer is recommended during circuit development and breadboarding. Recommended mounting hardware torque: lbf ft (6 8 kg cm or Nm). Recommended silicone grease: Dow Corning SC102, Toshiba YG6260, Shin-Etsu G746., or equivalent

6 (LF1129) ø Dimensions in Inches (for reference only) ± ± ± ± ± REF ±0.024 AT TIPS Dwg. MK in ø 2.8 Dimensions in Millimeters (controlling dimensions) 16.9 ± ± ± ± ± REF ±0.6 AT TIPS Dwg. MK mm 115 Northeast Cutoff, Box Worcester, Massachusetts (508)

7 -LF (LF1128) ø Dimensions in Inches (for reference only) ± ± ± REF ± REF ± REF ±0.020 Dwg. MK in ø 2.8 Dimensions in Millimeters (controlling dimensions) 16.9 ± ± ± REF 5.5 ± REF ± REF 2.0 ±0.5 Dwg. MK mm

8 The products described here are manufactured in Japan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc. Sanken Electric Co., Ltd. and Allegro MicroSystems, Inc. reserve the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of their products. Therefore, the user is cautioned to verify that the information in this publication is current before placing any order. These products are not authorized for use as critical components in life-support appliances, devices, or systems without express written approval. The information included herein is believed to be accurate and reliable. However, Sanken Electric Co., Ltd. and Allegro MicroSystems, Inc. assume no responsibility for its use; nor for any infringements of patents or other rights of third parties which may result from its use. 115 Northeast Cutoff, Box Worcester, Massachusetts (508)