IRIS-G5653 INTEGRATED SWITCHER. Features. Typical Connection Diagram. Data Sheet No. PD 96944A. Package Outline. Key Specifications

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1 Data Sheet No. PD 96944A Features Oscillator is provided on the monolithic control with adopting OnChip Trimming technology. INTEGRATED SWITCHER Package Outline Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. Low startup circuit current (ua max) Builtin Active LowPass Filter for stabilizing the operation in case of light load Avalanche energy guaranteed MOSFET with high VDSS The builtin power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. No VDSS derating is required. Indirect feedback by builtin error amplifier on Vin terminal Builtin constant voltage drive circuit Builtin step drive circuit Builtin low frequency PRC mode ( 2kHz) Various kinds of protection functions Pulsebypulse Overcurrent Protection (OCP) Overvoltage Protection with latch mode (OVP) Thermal Shutdown with latch mode (TSD) Descriptions Key Specifications Type MOSFET VDSS(V) TO22 Fullpack (5 Lead) RDS(ON) MAX 65.9Ω Pout(W) AC input(v) Note 23±5% to Note : The Pout (W) represents the thermal rating at QuasiResonant Operation, and the peak power output is obtained by approximately 2 to 4% of the above listed. When the output voltage is low and ONduty is narrow, the Pout (W) shall become lower than that of above. is a hybrid IC consists from power MOSFET and a controller IC, designed for Indirect feedback Quasi Resonant (including low frequency PRC) flyback converter type SMPS (Switching Mode Power Supply) applications. This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of Pulse Ratio Control (Onwidth control with fixed OFFtime). Typical Connection Diagram IRISG56 OCP/FB Vin GND S D

2 Absolute Maximum Ratings (Ta=25ºC) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Terminals Max. Ratings Units Note IDpeak Drain Current * 2 A Single Pulse IDMAX Maximum switching current *5 2 EAS Single pulse avalanche energy *2 2 8 mj V23=.78V Ta=2~+25 Single Pulse VDD=99V, L=2mH IL peak=2.6a Vin Input voltage for control part V Vth O.C.P/F.B Pin voltage 53 6 V 26 W With infintite heatsink PD Power dissipation for MOSFET *3 2.5 W Without heatsink PD2 Power dissipation for control part (Control IC) * W Specified by Vin Iin Internal frame temperature Refer to recommended TF in operation 2 ~ +25 operating temperature Top Operating ambient temperature 2 ~ +25 Tstg Storage temperature 4 ~ +25 Tch Channel temperature 5 A * Refer to MOS FET A.S.O curve *2 MOS FET TchEAS curve *3 Refer to MOS FET TaPD curve *4 Refer to TFPD2 curve for Control IC (See page 5) *5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and Pin 3 due to patterning, the maximum switching current decreases as shown by V 23 in Fig. Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current. Fig. V 23

3 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25, Vin=8V,unless otherwise specified) Ratings Test Symbol Definition MIN TYP MAX Units Conditions Vin(ON) Operation start voltage V Vin= 7.6V Vin(OFF) Operation stop voltage 9 V Vin=7.6 9V Iin(ON) Circuit current in operation 2 ma Iin(OFF) Circuit current in nonoperation µa Vin=4V TOFF(MAX) Maximum OFF time µsec Minimum time for input of quasi Tth(2) resonant signals *6 µsec TOFF(MIN) Minimum OFF time *7 2 µsec Vth() O.C.P/F.B Pin threshold voltage V Vth(2) O.C.P/F.B Pin threshold voltage V IOCP/FB O.C.P/F.B Pin extraction current ma Vin(OVP) O.V.P operation voltage V Vin= 39.V Iin(H) Latch circuit sustaining current *8 4 µa Vin= V Vin(La.OFF) Latch circuit release voltage * V Vin= V Tj(TSD) Thermal shutdown operating temperature 4 Vin(SENSE) Detected Voltage V Vin= V Temperature coefficient of detected voltage 2.5 mv/ Vin= V Electrical Characteristics (for MOSFET) (Ta=25 ) unless otherwise specified Symbol IDSS *6 Recommended operating conditions Tth(2).μsec Time for input of quasi resonant signals For the quasi resonant signal inputted to OCP/FB Pin VO.C.P/F.B at the time of quasi resonant operation, the signal shall Vth(2) be wider than Tth(2). V *7 The minimum OFF time means TOFF width at the time when the minimum quasi resonant signal is inputted. *8 The latch circuit means a circuit operated O.V.P and T.S.D. Definition Drain leakage current Ratings MIN TYP MAX VDSS DraintoSource breakdown voltage 65 ID=3µA V32=V(short) VDS=65V V32=V(s hort) V32=V RDS(ON) Onresistance.9 Ω ID=.2A t f Switching time 25 nsec θchf Thermal resistance 3 Units V µa 2 /W Test Conditions Between channel and internal frame

4 A.S.O. temperature derating coefficient curve MOSFET A.S.O. Curve Ta=25ºC Single Pulse A.S.O. temperature derating coefficient[%] Drain Current ID [A]. Drain current limit by ON resistance ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. ms.ms Internal frame temperature TF [ ]. DraintoSource Voltage VDS [V] 2 Maximum Switching current derating curve Ta= 2~+25 Avalanche energy derating curve Maximum Switchng Current IDMAX[A] EAS temperature derating coefficient[%] V23 [V] Channel temperature Tch [ ]

5 3 MOSFET TaPD Curve.9 MIC TFPD2 Curve 25 PD=26[W].8.7 PD2=.8[W] Power dissipation PD[W] 2 5 With infinite heatsink Power dissipation PD2[W] PD=.5[W] Without heatsink Ambient temperature Ta[ ] Internal frame temperature TF[ ] Transient thermal resistance curve Transient thermal resistance θchc[ /W]... µ µ µ m m m time t [sec]

6 Block Diagram 4 Vin D START O.V.P LATCH DRIVE REG. Vth 2 S T.S.D O.C.P/F.B ERROR AMP O.S.C + Vth2 3 GND Lead Assignments IRIS Pin No. Symbol Description Function D Drain Pin MOSFET drain 2 S Source Pin MOSFET source 3 GND Ground Pin Ground 4 Vin Power supply Pin Input of power supply for control circuit 5 OCP/FB Overcurrent / Feedback Pin Input of overcurrent detection signal / constant voltage control signal D S GND Vin OCP/FB Other Functions O.V.P. Overvoltage Protection Circuit T.S.D. Thermal Shutdown Circuit STEP DRV Step drive circuit

7 Case Outline 4.2 ±.2 φ3.2 ± ±.2 4 ± ±.2 IRIS a b 6.9 ± ±..94 ± ( 4.6) 4. ±. 5 2(R) Rend 8.7 ± ±.2 4xp.7±.=(6.8) ±.6 a:type Number G5653 b:lot Number st letter:the last digit of year 2nd letter:month to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec. 3rd & 4th letter:day Arabic Numerals 5 th letter : Registration Symbol 2 3 Material of Pin : Cu Treatment of Pin : Ni plating + solder dip 4 5 Weight : Approx. 2.3g Dimensions in mm DWG.No.:TG3A28 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC FAX: (3) Visit us at for sales contact information.