SELF-OSCILLATING HALF BRIDGE

Transcription

1 Features Output Power MOSFETs in half-bridge configuration High side gate drive designed for bootstrap operation Bootstrap diode integrated into package (HD type) Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of.2us Internal oscillator with programmable frequency 5.6V Zener clamped Vcc for offline operation Half-bridge output is out of phase with Micropower startup Description f = 4. ( RT + 75Ω) C The IR5H(D)XXX are complete high voltage, high speed, selfoscillating half-bridge circuits. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays for the high and low side Typical Connection DC Bus Preliminary Data Sheet No. PD60083-K SELF-OSCILLATING HALF BRIDGE T Product Summary VIN (max) 250V (IR5H(D)224) 400V () 500V () Duty Cycle 50% Deadtime.2µs Rds(on).Ω (IR5H(D)224) 3.0Ω () 3.6Ω () PD (TA = 25oC) 2.0W Package IR5H(D)224 9-Lead SIP without leads 5 and 8 power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to 500 volts. VIN D IR5H(D)XXX 2 Vcc V B 6 V IN 9 External Fast recovery diode D is not required for HD type TO, LOAD

2 IR5H(D)224 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Minimum Maximum Units V IN High voltage supply V B High side floating supply Vo Vo +2.5 V V O Half-bridge output -0.3 V IN V RT voltage V cc V CT voltage V cc I cc Supply current (note ) 25 I RT output current ma dv/dt Peak diode recovery 3.5 V/ns P D Package power TA +25 C 2.00 W Rth JA Thermal resistance, junction to ambient 60 o C/W T J Junction temperature T S Storage temperature o C T L Lead temperature (soldering, 0 seconds) 300 NOTE : This IC contains a zener clamp structure between V CC and which has a nominal breakdown voltage of 5.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the V CLAMP specified in the Electrical Characteristics Section 2

3 IR5H(D)224 Recommended Operating Conditions The input/output logic timing diagram is shown in figure. For proper operation, the device should be used within the recommended conditions. Symbol Definition Minimum Maximum Units V B High side floating supply absolute voltage Vo + 0 Vo + Vclamp V IN High voltage supply V V O Half-bridge output voltage -3.0 (note 2) V IN I D Continuous drain current (TA = 25 C) A (TA = 85 C) I CC Supply current (note 3) 5 ma T A Ambient temperature C NOTE 2: Care should be taken to avoid switching conditions where the V S node flies inductively below ground by more than 5V. NOTE 3: Enough current should be supplied to the V CC lead of the IC to keep the internal 5.6V zener diode clamping the voltage at this lead. Dynamic Electrical Characteristics V BIAS (V CC, V BS ) = 2V, TA = 25 o C unless otherwise specified. Symbol Definition Min. Typ. Max. Units Test Conditions trr Reverse recovery time (MOSFET body diode) I F =.A ns I F=900mA I F=700mA di/dt Qrr Reverse recovery charge (MOSFET body diode) I F =.A = µc I F =900mA A/µs I F =700mA D duty cycle 50 % fosc = 20 khz 3

4 IR5H(D)224 Static Electrical Characteristics V BIAS (V CC, V B ) = 2V, TA = 25 o C unless otherwise specified. Symbol Definition Min. Typ. Max. Units Test Conditions V CCUV+ V CC supply undervoltage positive going 8.4 V threshold V CCUV- V CC supply undervoltage negative going 8.0 V threshold I QCC Quiescent V CC supply current 300 µa V CC > V CCUV V CLAMP V CC zener shunt clamp voltage 5.6 V I CC = 5mA I QBS Quiescent V BS supply current 30 µa l OS Offset supply leakage current 50 V B = V IN = 500V f OSC Oscillator frequency 20 = 35.7 kω = nf khz 00 = 7.04 kω = nf I CT input current µa V CTUV undervoltage lockout 00 Note 2 V RT+ high level output voltage, V CC - 20 I RT = 00µA 200 I RT = -ma mv V RT- low level output voltage 20 I RT = 00µA 200 I RT = -ma V RTUV undervoltage lockout, V CC - 00 I RT = 00µA V CT+ 2/3 V CC threshold 8.0 V CT- /3 V CC threshold 4.0 khz Rds(on) Static-drain-to-source on-resistance V SD Diode forward voltage Ω V I F =.A I F=900mA I F=700mA I F =.A I F =900mA I F =700mA di/dt =00 A/µs 4

5 IR5H(D)224 Functional Block Diagram V B VIN D 6 9 Vcc IRFCXXX H O 2 IR25 V S 7 C T 3 L O IRFCXXX 4 Fast recovery diode D is incorporated in IR5HDXXX only Lead Definitions Symbol V CC V B V IN Lead Description Logic and internal gate drive supply voltage. An internal zener clamp diode at 5.6 V norminal is included to allow the V CC to be current fed directly from VIN typically by means of a high value resistor. Oscillator timing resistor output; a resistor is connected from to. RT is out of phase with the halfbridge output (). Oscillator timing capacitor input; a capacitor is connected from to in order to program the oscillator frequency according to the following equation: f = 4. ( RT + 75Ω) CT PIN also invokes shutdown function (see note 2) where 75Ω is the effective impedence of the output stage. High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is needed to feed from V CC to V B. (HD type circuits incorporate this diode). High voltage supply Half Bridge output Logic and low side of half bridge return 5

6 IR5H(D)224 Lead Assignments Vcc 6 V B 2 RT 7 3 CT 9 V IN 4 9-Lead SIP without Leads 5 and 8 Vccuv+ V CLAMP Vcc V+ 0 Figure. Input/Output Timing Diagram 6

7 IR5H(D)224 Case outline NOTES:. Dimensioning and tolerancing per ANSI Y4.5M Controlling Dimension: INCH 3. Dimensions are shown in millimeters (inches) 9-Lead SIP w/o leads 5 and 8 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California Tel: (30) Data and specifications subject to change without notice. 5/4/