Type IRIS-G6351S Ω

Transcription

1 Data Sheet No. PD 9694A Features Oscillator is provided on the monolithic control with adopting OnChip Trimming technology. INTEGRATED SWITCHER Package Outline Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. Low startup circuit current (0uA max) Builtin Active LowPass Filter for stabilizing the operation in case of light load Avalanche energy guaranteed MOSFET with high VDSS The builtin power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. No VDSS derating is required. Builtin constant voltage drive circuit Various kinds of protection functions Pulsebypulse Overcurrent Protection (OCP) Overvoltage Protection with latch mode (OVP) Thermal Shutdown with latch mode (TSD) Descriptions Key Specifications Type MOSFET VDSS(V) TO220 Fullpack ( Lead) RDS(ON) MAX Ω Pout(W) AC input(v) Note 230±% 6 8 to Note : The Pout (W) represents the thermal rating at PRC Operation, and the peak power output is obtained by approximately 20 to 40% of the above listed. When the output voltage is low and ONduty is narrow, the Pout (W) shall become lower than that of above. is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC flyback converter type SMPS (Switching Mode Power Supply) applications. This IC realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of Pulse Ratio Control (Onwidth control with fixed OFFtime). Typical Connection Diagram IRISG6300 GND S D

2 Absolute Maximum Ratings (Ta=2ºC) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Terminals Max. Ratings Units Note IDpeak Drain Current * A Single Pulse IDMAX Maximum switching current * EAS Single pulse avalanche energy * mj V23=0.82V Ta=20~2 Single Pulse VDD=99V, L=20mH IL peak=2.7a Input voltage for control part 43 3 V Vth O.C.P/F.B Pin voltage 3 6 V 24 W With infintite heatsink PD Power dissipation for MOSFET *3 2. W Without heatsink PD2 Power dissipation for control part (Control IC) *4 Internal frame temperature W Specified by Iin Refer to recommended TF in operation 20 ~ 2 operating temperature Top Operating ambient temperature 20 ~ 2 Tstg Storage temperature 40 ~ 2 Tch Channel temperature 0 A * Refer to MOS FET A.S.O curve *2 MOS FET TchEAS curve *3 Refer to MOS FET TaPD curve *4 Refer to TFPD2 curve for Control IC (See page ) * Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and Pin 3 due to patterning, the maximum switching current decreases as shown by V 23 in Fig. Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current. Fig. V 23

3 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=2, =20V,unless otherwise specified) Ratings Symbol Definition MIN TYP MAX Units Test Conditions (ON) Operation start voltage V =0 9.4V (OFF) Operation stop voltage * V =9.4 9.V Iin(ON) Circuit current in operation ma Iin(OFF) Circuit current in nonoperation 0 µa =V TOFF(MAX) Maximum OFF time 2 8 µsec Vth O.C.P/F.B Pin threshold voltage V I O.C.P/F.B Pin extraction current ma (OVP) O.V.P operation voltage V =0 27.8V Iin(H) Latch circuit sustaining current *7 70 µa =27.8 ((OFF)0.3)V (La.OFF) Latch circuit release voltage *6, V = V Tj(TSD) Thermal shutdown operating temperature 3 *6 The relation of VIN(OFF) >VIN(La.OFF) is applied for each product *7 The latch circuit means a circuit operated O.V.P and T.S.D. Electrical Characteristics (for MOSFET) (Ta=2 ) unless otherwise specified Ratings Symbol Definition MIN TYP MAX Units Test Conditions VDSS DraintoSource breakdown voltage 60 V IDSS Drain leakage current 300 µa ID=300µA V32=0V(short) VDS=60V V32=0V(s hort) V32=0V ID=0.6A RDS(ON) Onresistance 3.9 Ω tf Switching time 20 nsec θchf Thermal resistance 2.4 /W Between channel and internal frame

4 00 A.S.O. temperature derating coefficient curve 00 MOSFET A.S.O. Curve Ta=2ºC Single Pulse A.S.O. temperature derating coefficient[%] Drain Current ID [A] 0 0. Drain current limit by ON resistance ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. ms 0.ms Internal frame temperature TF [ ] DraintoSource Voltage VDS [V] 3.0 Maximum Switching current derating curve Ta= 20~2 00 Avalanche energy derating curve Maximum Switchng Current I DMAX [A] EAS temperature derating coefficient[%] V23 [V] Channel temperature Tch [ ]

5 30 MOSFET TaPD Curve 0.6 MIC TFPD2 Curve 2 PD=24[W] 0.4 PD2=0.4[W] 0.2 Power dissipation PD[W] 20 0 With infinite heatsink Power dissipation PD2[W] PD=.[W] Without heatsink Ambient temperature Ta[ ] Internal frame temperature TF[ ] 0 Transient thermal resistance curve Transient thermal resistance θchc[ /W] µ 0µ 00µ m 0m 00m time t [sec]

6 Block Diagram 4 UVLO REG Internal Bias Latch Delay OVP TSD REG D OSC PWM Latch S Q Drive R 2 S OCP Comp. Icont 3 GND Lead Assignments IRIS Pin No. Symbol Description Function D Drain Pin MOSFET drain 2 S Source Pin MOSFET source 3 GND Ground Pin Ground 4 Power supply Pin Overcurrent / Feedback Pin Input of power supply for control circuit Input of overcurrent detection signal / constant voltage control signal D S GND Other Functions O.V.P. Overvoltage Protection Circuit T.S.D. Thermal Shutdown Circuit

7 Case Outline 4.2 ±0.2 φ3.2 ± ±0.2 4 ± ±0.2 IRIS a b 6.9 ± ± ± ( 4.6) 4. ±0. 2(R) Rend 8.7 ± ±0.2 3 Material of Pin : Cu Treatment of Pin : Ni plating solder dip 4 4xp.7±0.=(6.8) ±0.6 a:type Number G63S b:lot Number st letter:the last digit of year 2nd letter:month to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec. 3rd & 4th letter:day Arabic Numerals th letter : Registration Symbol Weight : Approx. 2.3g Dimensions in mm DWG.No.:TG3A28 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9024, USA Tel: (30) 2270 TAC FAX: (30) Visit us at for sales contact information.