IPS0551T FULLY PROTECTED POWER MOSFET SWITCH. L oad. Product Summary

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1 Data Sheet No. PD616-C FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The is a fully protected three terminal SMART POWER MOSFET that features over-current, over-temperature, ESD protection, and drain to source active clamp. This device combines a HEXFET POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when temperature exceeds 165 o C or when the drain current reaches A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Product Summary R ds(on) 6.mΩ (max) V clamp 4V Ishutdown A T on/ T off 4µs Package SUPER TO22 Typical Connection L oad R in series ( if needed ) IN control D (Please refer to lead assignment for correct pin configuration) Logic signal S 1

2 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25 o C unless otherwise specified). PCB mounting uses the standard footprint with 7 µm copper thickness. Symbol Parameter Min. Max. Units Test Conditions V ds Maximum drain to source voltage 37 V in Maximum input voltage I+in Maximum IN current - + ma Isd cont. Diode max. continuous current (1) (rth=6 o C/W) 2.8 (rth=5 o C/W) 35 Isd pulsed Diode max. pulsed current (1) Pd Maximum power dissipation (1) (rth=6 o C/W) 2 W ESD1 Electrostatic discharge voltage (Human Body) 4 C=pF, R=15Ω, kv ESD2 Electrostatic discharge voltage (Machine Model).5 C=2pF, R=Ω, L=µH T stor. Max. storage temperature Tj max. Max. junction temperature Tlead Lead temperature (soldering, seconds) 3 V A o C Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Rth 1 Thermal resistance free air 6 Rth 2 Thermal resistance to PCB min footprint 6 Rth 3 Thermal resistance to PCB 1" sq. footprint 35 Rth 4 Thermal resistance junction to case.7 Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vds (max) Continuous drain to source voltage 18 VIH High level input voltage 4 6 V VIL Low level input voltage.5 Ids Continuous drain current Tamb=85 o C (TAmbient = 85 o C, IN = 5V, rth = 8 o C/W, Tj = 125 o C) 8 A (TAmbient = 85 o C, IN = 5V, rth = 5 o C/W, Tj = 125 o C) 35 Rin Recommended resistor in series with IN pin.1.5 kω Tr-in (max) Max recommended rise time for IN signal (see fig. 2) 1 µs Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) 1 khz (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operation at higher switching frequencies is possible. See Appl. Notes. o C/W 2

3 Static Electrical Characteristics (Tj = 25 o C and Vcc = 14V unless otherwise specified. Standard footprint 7µm of copper thickness) Symbol Parameter Min. Typ. Max. Units Test Conditions Rds(on) ON state resistance Tj = 25 o C 4.5 o C Rds(on) ON state resistance Tj = 15 o C 7.5 o C Idss Drain to source leakage current.1 25 µa Vcc = 14V, Tj = o C V clamp 1 Drain to source clamp voltage Id = 2mA (see Fig.3 & 4) V clamp 2 Drain to source clamp voltage I=35A -t<us Vsd Body diode forward voltage.85 1 Id = 35A, Vin = V V Vin clamp IN to source clamp voltage Iin = 1 ma Vth IN threshold voltage Id = 5mA, Vds = 14V Iin, on Input supply current (normal operation) Vin = 5V µa Iin, off Input supply current (protection mode) Vin = 5V over-current triggered mω Vin = 5V, Ids = A Switching Electrical Characteristics Vcc = 14V, Resistive Load =.4Ω, Rinput = 5Ω, µs pulse, T j = 25 o C, (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Test Conditions Ton Turn-on delay time Tr Rise time See figure 2 Trf Time to 13% final Rds(on) 15 µs Toff Turn-off delay time See figure 2 Tf Fall time Qin Total gate charge 2 nc Vin = 5V Protection Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Tsd Over temperature threshold 165 o C See fig. 1 Isd Over current threshold 6 15 A See fig. 1 Vreset IN protection reset threshold V Treset Time to reset protection 2 4 µs Vin = V, Tj = 25 o C EOI_OT Short circuit energy (cf application note) 4 12 µj Vcc = 14V 3

4 Functional Block Diagram All values are typical DRAIN 37 V 2 Ω k Ω IN S Q 8V 8 µ A R Q T > 165 c I sense I > Isd SOURCE Lead Assignments In D S SUPER TO22 4

5 Vin 5 V V Vin 9 % % Ids Isd I shutdown t < T reset t > T reset Ids Tr-in 9 % % T Tsd (165 c) T shutdown Vds Td on tr Td off tf Figure 1 - Timing diagram Figure 2 - IN rise time & switching time definitions T clamp Vin L V load Ids Vds Vds clamp ( Vcc ) ( see Appl. Notes to evaluate power dissipation ) Rem : V load is negative during demagnetization 5 v v Vin IN R D S Vds Ids + 14 V - Figure 3 - Active clamp waveforms Figure 4 - Active clamp test circuit 5

6 All curves are typical values with standard footprint. Operating in the shaded area is not recommended Tj = 15 o C Tj = 25 o C % 18% 16% 14% 12% % 8% 6% 4% 2% % Figure 5 - Rds(on) (mω) Vs Input Voltage (V) Figure 6 - Normalised Rds(on) (%) Vs Tj ( o C) ton delay 13% rdson rise time Figure 7 - Turn-ON Delay Time, Rise Time & Time to 13% final Rds(on) (us) Vs Input Voltage (V) toff delay fall time Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) 6

7 delay on rise time 13% rdson delay off fall time 1 1 Figure 9 - Turn-ON Delay Time, Rise Time & Time to 13% final Rds(on) (us) Vs IN Resistor (Ω) Figure - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor (Ω) Isd 25 C Ilim 25 C Figure 11 - Current Iim. & Ishutdown (A) Vs Vin (V) Figure 12 - Over-current (A) Vs Temperature ( o C) 7

8 r th = 1 C/W (cas e t o ambient ) 9 8 rth = 5 C/W rth = 15 C/W rth = 3 C/W: 1'' footprint r th= 6 C/W: s t d. f oot pr int Load characteristic should be below this curve T=25 C free air/ std. footprint T= C free air/ std. footprint Current path capability should be above this curve Figure 13 - Max.Cont. Ids (A) Vs Amb. Temperature ( o C) Figure 14 - Ids (A) Vs Protection Resp. Time (s) single pulse Hz rth=6 C/W dt=25 C Hz rth=6 C/W dt=25 C 1.E+2 1.E+1 1.E E-1 1.E-2 Single pulse rth free air / std. fooprint rth 1 inch² footprint rth infinite heatsink Figure 15 - Iclamp (A) Vs Inductive Load (mh) Figure 16 - Transient Thermal Imped. ( o C/W) Vs Time (s) 8

9 Iin,on Iin,off Treset rise time fall time Figure 17 - Inputcurrent (µa) Vs Junction ( o C) Figure 18 - Turn-on, Turn-off and Treset (µs) Vs Tj ( o C) 12% 115% 1% 5% % 95% 9% Vds Isd 85% Vin ma 8% Figure 19 - Vin clamp1 & Vin clamp2 (%) Vs Tj ( o C) 9

10 Case outline Super TO22 A 11. [.433]. [.394] 5. [.196] 4. [.158] B 9. [.354] 8. [.315].25 [.] B A 1.5 [.59].5 [.2] 15. [.59] 14. [.552] [.531] 12.5 [.493] [.157] 3.5 [.138] 14.5 [.57] 13. [.512] LEAD ASSIGNMENTS MOS F ET 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN IGBT 1 - GATE 2 - COLLECTOR 3 - EMIT TER 4 - COLLECTOR 2.55 [.] 2X 1.3 [.51] 3X.9 [.36].25 [.] B A 1. [.39] 4X.7 [.28] 3. [.118] 2.5 [.99] O S 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M CONT ROL LING DIMENS ION: MILLIMET ER. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE TO-273AA IR WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 9245 Tel: (3) Data and specifications subject to change without notice. 6/21/22