IPS0151/IPS0151S FULLY PROTECTED POWER MOSFET SWITCH. Load

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1 Preliminary Data Sheet No.PD 644-G IPS5/IPS5S FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS5/IPS5S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.these device combine a HEXFET POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 65 o C or when the drain current reaches 35A. These device restart once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Product Summary R ds(on) V clamp Ishutdown Tshutdown T on/ T off Available Package 5mΩ (max) 5V 35A 65 o C.5µs SMD IPS5S TO - IPS5 Typical Connection Load R in series ( if needed ) IN control D Logic signal S

2 Absolute Maximum Ratings Absolute maximum ratings indicates sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 5 o C unless otherwise specified). PCB mounting uses the standard footprint with 7 µm copper thickness. Symbol Parameter Min. Max. Units Test Conditions V ds Maximum drain to source voltage 47 V in Maximum Input voltage Iin, max Maximum IN current - + ma Isd cont. Diode max. continuous current () (rth=6 o C/W) IPS5.8 TO free air (rth=5 o C/W) IPS5 35 A TO + good cooling (rth=8 o C/W) IPS5S. SMD Std footprint Isd pulsed Diode max. pulsed current () 45 Pd Maximum power dissipation () (rth=6 o C/W) IPS5 (rth=8 o C/W) IPS5S.56 ESD Electrostatic discharge voltage (Human Body) tbd C=pF, R=5Ω, ESD Electrostatic discharge voltage (Machine Model) tbd V C=pF, R=Ω, Tj max. Max. storage & operating junction temp Tlead Lead temperature (soldering, seconds) 3 Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Rth Thermal resistance free air 55 6 Rth Thermal resistance junction to case Rth Thermal resistance with standard footprint 58 8 Rth Thermal resistance with " square footprint 35 6 Rth 3 Thermal resistance junction to case () Limited by junction temperature (pulsed current limited also by internal wiring) () Operations at higher switching frequencies is possible. See Appl. Notes. V W o C o C/W TO- D PAK (SMD) Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vds (max) Continuous drain to source voltage 35 VIH High level input voltage 4 6 V VIL Low level input voltage.5 Ids Continuous drain current Tamb=85 o C (TAmbient = 85 o C, IN = 5V, rth = 6 o C/W, Tj = 5 o C) IPS5 4.3 A (TAmbient = 85 o C, IN = 5V, rth = 8 o C/W, Tj = 5 o C) IPS5S 3.8 Rin Recommended resistor in series with IN pin. 5 kω Tr-in (max) Max recommended rise time for IN signal (see fig. ) µs Fr-Isc () Max. frequency in short circuit condition (Vcc = 4V) khz

3 Static Electrical Characteristics (Tj = 5 o C unless otherwise specified.) Symbol Parameter Min. Typ. Max. Units Test Conditions Rds(on) ON state resistance Tj = 5 o C o C Rds(on) ON state resistance Tj = 5 o C 35 o C Idss Drain to source leakage current.5 5 µa Vcc = 4V, Tj = 5 o o C V clamp Drain to source clamp voltage 47 5 Id = ma (see Fig.3 & 4) V clamp Drain to source clamp voltage 54 6 Id=Ishutdown (see Fig.3 & 4) Vsd Body diode forward voltage.85 V Id = 5A, Vin = V Vin clamp IN to source clamp voltage Iin = ma Vth IN threshold voltage.6 Id = 5mA Iin, on Input supply current (normal operation) 5 8 Vin = 5V Iin, off Input supply current (protection mode) µa Vin = 5V over-current triggered mω Vin = 5V, Ids = A Switching Electrical Characteristics Vcc = 4V, Resistive Load = 3Ω, Rinput = 5Ω, usec pulse, T j = 5 o C, (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Test Conditions Ton Turn-on delay time.4 Tr Rise time. See figure Trf Time to 3% final Rds(on) 3.8 µsec Toff Turn-off delay time. See figure Tf Fall time.3 Qin Total gate charge 3 nc Vin = 5V Protection Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Tsd Over temperature threshold 65 o C See fig. Isd Over current threshold 35 A See fig. V in,min,prot Minimum IN voltage for protection 3 V Treset Minimum time for protection reset µs Vin = V EOI_OT Short circuit energy (cf application note) 4 µj Vcc = 4V 3

4 Functional Block Diagram All values are typical DRAIN 47 V Ω kω IN S Q 7.5 V 8 µa R Q T > 65 c I sense I > Isd SOURCE Lead Assignments (D) (D) 3 In D S 3 In D S TO IPS5 Part Number D PAK (SMD) IPS5S 4

5 Case Outline - TO NOTES: X IRGB -36 Case Outline - D PAK (SMD)

6 Tape & Reel - D PAK (SMD) 6

7 Vin 5 V V Vin 9 % % Ids Isd I shutdown t < T reset t > T reset Ids Tr-in 9 % % T Tsd (65 c) T shutdown Vds Td on tr Td off tf Figure - Timing diagram Figure - IN rise time & switching time definitions T clamp Vin L V load Ids Vds Vds clamp ( Vcc ) ( see Appl. Notes to evaluate power dissipation ) Rem : V load is negative during demagnetization 5 v v Vin IN R D S Vds Ids + 4 V - Figure 3 - Active clamp waveforms Figure 4 - Active clamp test circuit 7

8 All curves are typical values with standard footprints. Operating in the shaded area is not recommended Tj = 5 o C Tj = 5 o C Figure 5 - Rds ON (mω) Vs Input Voltage (V) Figure 6 - Normalised Rds ON (%) Vs Tj ( o C) ton delay rise time 3% final rdson toff delay fall time Figure 7 - Turn-ON Delay Time, Rise Time & Time to 3% final Rds(on) Vs Input Voltage (V) Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) 8

9 delay on rise time 3% rdson delay off fall time.. Figure 9 - Turn-ON Delay Time, Rise Time & Time to 3% final Rds(on) Vs IN Resistor (Ω) Figure - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor (Ω) Isd 5 C 5 Ilim 5 C Figure - Current Iim. & Ishutdown (A) Vs Vin (V) Figure - Over-current (A) Vs Temperature ( o C) 9

10 rth = 5 C/W rth = 5 C/W rth = 3 C/W T free air 6 C/W rth = 5 C/W rth = 5 C/W SMD '' footprint SMD std. footprint Figure 3a - Max.Cont. Ids (A) Vs Amb. Temperature ( o C) - IPS5 Figure 3b - Max.Cont. Ids (A) Vs Amb. Temperature ( o C) - IPS5S Current path capability should be above this single pulse Hz rth=6 C/W dt=5 C khz rth=6 C/W dt=5 C Load characteristic should be below this curve T=5 C T= C. Vbat = 4 V Tjini = T sd... Figure 4 - Ids (A) Vs Protection Resp. Time (s) IPS5 & IPS5S Figure 5 - Iclamp (A) Vs Inductive Load (mh)

11 .. rth free air TO Single pulse rth junction to case TO.. Single pulse rth std. footprint SMD rth junction to case SMD Figure 6a - Transient Thermal Imped. ( o C/W) Vs Time (s) - IPS5 Figure 6b - Transient Thermal Imped. ( o C/W) Vs Time (s) - IPS5S WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 945 Tel: (3) IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T 3Z Tel: (95) 453- IR GERMANY: Saalburgstrasse 57, 635 Bad Homburg Tel: IR ITALY: Via Liguria 49, 7 Borgaro, Torino Tel: IR FAR EAST: K&H Bldg., F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 7 Tel: IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore Tel: IR TAIWAN: 6 Fl. Suite D..7, Sec., Tun Haw South Road, Taipei, 673, Taiwan Tel: Data and specifications subject to change without notice. 9/5/98

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