IPS0151/IPS0151S FULLY PROTECTED POWER MOSFET SWITCH. Load
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1 Preliminary Data Sheet No.PD 644-G IPS5/IPS5S FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS5/IPS5S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.these device combine a HEXFET POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 65 o C or when the drain current reaches 35A. These device restart once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Product Summary R ds(on) V clamp Ishutdown Tshutdown T on/ T off Available Package 5mΩ (max) 5V 35A 65 o C.5µs SMD IPS5S TO - IPS5 Typical Connection Load R in series ( if needed ) IN control D Logic signal S
2 Absolute Maximum Ratings Absolute maximum ratings indicates sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 5 o C unless otherwise specified). PCB mounting uses the standard footprint with 7 µm copper thickness. Symbol Parameter Min. Max. Units Test Conditions V ds Maximum drain to source voltage 47 V in Maximum Input voltage Iin, max Maximum IN current - + ma Isd cont. Diode max. continuous current () (rth=6 o C/W) IPS5.8 TO free air (rth=5 o C/W) IPS5 35 A TO + good cooling (rth=8 o C/W) IPS5S. SMD Std footprint Isd pulsed Diode max. pulsed current () 45 Pd Maximum power dissipation () (rth=6 o C/W) IPS5 (rth=8 o C/W) IPS5S.56 ESD Electrostatic discharge voltage (Human Body) tbd C=pF, R=5Ω, ESD Electrostatic discharge voltage (Machine Model) tbd V C=pF, R=Ω, Tj max. Max. storage & operating junction temp Tlead Lead temperature (soldering, seconds) 3 Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Rth Thermal resistance free air 55 6 Rth Thermal resistance junction to case Rth Thermal resistance with standard footprint 58 8 Rth Thermal resistance with " square footprint 35 6 Rth 3 Thermal resistance junction to case () Limited by junction temperature (pulsed current limited also by internal wiring) () Operations at higher switching frequencies is possible. See Appl. Notes. V W o C o C/W TO- D PAK (SMD) Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vds (max) Continuous drain to source voltage 35 VIH High level input voltage 4 6 V VIL Low level input voltage.5 Ids Continuous drain current Tamb=85 o C (TAmbient = 85 o C, IN = 5V, rth = 6 o C/W, Tj = 5 o C) IPS5 4.3 A (TAmbient = 85 o C, IN = 5V, rth = 8 o C/W, Tj = 5 o C) IPS5S 3.8 Rin Recommended resistor in series with IN pin. 5 kω Tr-in (max) Max recommended rise time for IN signal (see fig. ) µs Fr-Isc () Max. frequency in short circuit condition (Vcc = 4V) khz
3 Static Electrical Characteristics (Tj = 5 o C unless otherwise specified.) Symbol Parameter Min. Typ. Max. Units Test Conditions Rds(on) ON state resistance Tj = 5 o C o C Rds(on) ON state resistance Tj = 5 o C 35 o C Idss Drain to source leakage current.5 5 µa Vcc = 4V, Tj = 5 o o C V clamp Drain to source clamp voltage 47 5 Id = ma (see Fig.3 & 4) V clamp Drain to source clamp voltage 54 6 Id=Ishutdown (see Fig.3 & 4) Vsd Body diode forward voltage.85 V Id = 5A, Vin = V Vin clamp IN to source clamp voltage Iin = ma Vth IN threshold voltage.6 Id = 5mA Iin, on Input supply current (normal operation) 5 8 Vin = 5V Iin, off Input supply current (protection mode) µa Vin = 5V over-current triggered mω Vin = 5V, Ids = A Switching Electrical Characteristics Vcc = 4V, Resistive Load = 3Ω, Rinput = 5Ω, usec pulse, T j = 5 o C, (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Test Conditions Ton Turn-on delay time.4 Tr Rise time. See figure Trf Time to 3% final Rds(on) 3.8 µsec Toff Turn-off delay time. See figure Tf Fall time.3 Qin Total gate charge 3 nc Vin = 5V Protection Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Tsd Over temperature threshold 65 o C See fig. Isd Over current threshold 35 A See fig. V in,min,prot Minimum IN voltage for protection 3 V Treset Minimum time for protection reset µs Vin = V EOI_OT Short circuit energy (cf application note) 4 µj Vcc = 4V 3
4 Functional Block Diagram All values are typical DRAIN 47 V Ω kω IN S Q 7.5 V 8 µa R Q T > 65 c I sense I > Isd SOURCE Lead Assignments (D) (D) 3 In D S 3 In D S TO IPS5 Part Number D PAK (SMD) IPS5S 4
5 Case Outline - TO NOTES: X IRGB -36 Case Outline - D PAK (SMD)
6 Tape & Reel - D PAK (SMD) 6
7 Vin 5 V V Vin 9 % % Ids Isd I shutdown t < T reset t > T reset Ids Tr-in 9 % % T Tsd (65 c) T shutdown Vds Td on tr Td off tf Figure - Timing diagram Figure - IN rise time & switching time definitions T clamp Vin L V load Ids Vds Vds clamp ( Vcc ) ( see Appl. Notes to evaluate power dissipation ) Rem : V load is negative during demagnetization 5 v v Vin IN R D S Vds Ids + 4 V - Figure 3 - Active clamp waveforms Figure 4 - Active clamp test circuit 7
8 All curves are typical values with standard footprints. Operating in the shaded area is not recommended Tj = 5 o C Tj = 5 o C Figure 5 - Rds ON (mω) Vs Input Voltage (V) Figure 6 - Normalised Rds ON (%) Vs Tj ( o C) ton delay rise time 3% final rdson toff delay fall time Figure 7 - Turn-ON Delay Time, Rise Time & Time to 3% final Rds(on) Vs Input Voltage (V) Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) 8
9 delay on rise time 3% rdson delay off fall time.. Figure 9 - Turn-ON Delay Time, Rise Time & Time to 3% final Rds(on) Vs IN Resistor (Ω) Figure - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor (Ω) Isd 5 C 5 Ilim 5 C Figure - Current Iim. & Ishutdown (A) Vs Vin (V) Figure - Over-current (A) Vs Temperature ( o C) 9
10 rth = 5 C/W rth = 5 C/W rth = 3 C/W T free air 6 C/W rth = 5 C/W rth = 5 C/W SMD '' footprint SMD std. footprint Figure 3a - Max.Cont. Ids (A) Vs Amb. Temperature ( o C) - IPS5 Figure 3b - Max.Cont. Ids (A) Vs Amb. Temperature ( o C) - IPS5S Current path capability should be above this single pulse Hz rth=6 C/W dt=5 C khz rth=6 C/W dt=5 C Load characteristic should be below this curve T=5 C T= C. Vbat = 4 V Tjini = T sd... Figure 4 - Ids (A) Vs Protection Resp. Time (s) IPS5 & IPS5S Figure 5 - Iclamp (A) Vs Inductive Load (mh)
11 .. rth free air TO Single pulse rth junction to case TO.. Single pulse rth std. footprint SMD rth junction to case SMD Figure 6a - Transient Thermal Imped. ( o C/W) Vs Time (s) - IPS5 Figure 6b - Transient Thermal Imped. ( o C/W) Vs Time (s) - IPS5S WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 945 Tel: (3) IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T 3Z Tel: (95) 453- IR GERMANY: Saalburgstrasse 57, 635 Bad Homburg Tel: IR ITALY: Via Liguria 49, 7 Borgaro, Torino Tel: IR FAR EAST: K&H Bldg., F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 7 Tel: IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore Tel: IR TAIWAN: 6 Fl. Suite D..7, Sec., Tun Haw South Road, Taipei, 673, Taiwan Tel: Data and specifications subject to change without notice. 9/5/98
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PD- 57A INSULATED GATE BIPOLAR TRANSISTOR GA2SA6S Standard Speed IGBT Features C Standard : Optimized for minimum saturation voltage and low operating frequencies up to khz Lowest conduction losses available
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May, 9th 2012 Automotive grade SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD - 9790 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30W-S Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve
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INSULATED GATE BIPOLAR TRANSISTOR PD - 9.585B IRG4PC40K Short Circuit Rated UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit
More informationLinear Derating Factor W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
Utra Low On-Resistance Dua P-Channe MOSFET Very Sma SOIC Package Low Profie (
More informationSINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH
Automotive Grade AUIPS1051L / AUIPS1052G SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD
More informationAUIPS1041(L)(R)/AUIPS1042G
May, 9th 2012 Automotive grade AUIPS1041(L)(R)/AUIPS1042G SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
PD -91656C INSULATED GATE BIPOLAR TRANSISTOR IRG4PC40W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve
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Benefits l Applications l l Ultra-Low Gate Impedance SMPS MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use High Frequency Buck Converters for
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PD - 90864A IRFL9110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated P-Channe Fast Switching Ease of Paraeing Description Third Generation HEXFETs
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CWQ06FN SCHOTTKY ECTIFIE Amp D-Pak (TO-5AA) Major atings and Characteristics Characteristics CWQ06FN Units I F(AV) ectangular A waveform V M 60 V I FSM @ tp = 5 µs sine 30 A V F @ 6 Apk, T = 5 C J 0.57
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PD - 90861A IRFL110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation
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HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated
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PD-20557 rev. B /99 SCHOTTKY ECTIFIE 72CPQ030 70 Amp TO-247AC Major atings and Characteristics Characteristics 72CPQ030 Units I F(AV) ectangular 70 A waveform V M 30 V I FSM @ tp = 5 µs sine 280 A V F
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l l l l l Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description
More informationParameter Maximum Units
l Co-packaged HEXFET Power MOSFET and Schottky iode l P-Channel HEXFET l Low V F Schottky Rectifier l Generation 5 Technology l Micro8 TM Footprint escription S G FETKY 2 3 TM 4 5 Top View The FETKY TM
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Automotive grade AUIR3320S LOW EMI CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced to Vcc Over temperature
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PD - 9.629 PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses
More informationAbsolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D
P-900 IRF7809AV N-Channel Application-Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications S S 1 2 8 7
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth
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December, 10th 2011 Automotive grade AUIPS6044G INTELLIGENT POWER HIGH SIDE SWITCH Features Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Reverse battery protection
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