IPS0151/IPS0151S FULLY PROTECTED POWER MOSFET SWITCH. Load
|
|
- Corey Waters
- 5 years ago
- Views:
Transcription
1 Data Sheet No.PD644H FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.these device combine a HEXFET POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 65 o C or when the drain current reaches 35A. These device restart once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Product Summary R ds(on) V clamp Ishutdown T on/ T off Available Package 5mΩ (max) 5V 35A.5µs SMD IPS5S TO- - IPS5 Typical Connection Load R in series ( if needed ) IN control D Logic signal S
2 Absolute Maximum Ratings Absolute maximum ratings indicates sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 5 o C unless otherwise specified). PCB mounting uses the standard footprint with 7 µm copper thickness. Symbol Parameter Min. Max. Units Test Conditions V ds Maximum drain to source voltage 47 V in Maximum Input voltage Iin, max Maximum IN current - + ma Isd cont. Diode max. continuous current () (rth=6 o C/W) IPS5.8 TO free air (rth=5 o C/W) IPS5 35 A TO + good cooling (rth=8 o C/W) IPS5S. SMD Std footprint Isd pulsed Diode max. pulsed current () 45 Pd Maximum power dissipation () (rth=6 o C/W) IPS5 (rth=8 o C/W) IPS5S.56 ESD Electrostatic discharge voltage (Human Body) 5 C=pF, R=5Ω, ESD Electrostatic discharge voltage (Machine Model).6 kv C=pF, R=Ω, Tj max. Max. storage & operating junction temp Tlead Lead temperature (soldering, seconds) 3 Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Rth Thermal resistance free air 55 6 Rth Thermal resistance junction to case Rth Thermal resistance with standard footprint 58 8 Rth Thermal resistance with " square footprint 35 6 Rth 3 Thermal resistance junction to case () Limited by junction temperature (pulsed current limited also by internal wiring) () Operations at higher switching frequencies is possible. See Appl. Notes. V W o C o C/W TO- D PAK (SMD) Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vds (max) Continuous drain to source voltage 35 VIH High level input voltage 4 6 V VIL Low level input voltage.5 Ids Continuous drain current Tamb=85 o C (TAmbient = 85 o C, IN = 5V, rth = 6 o C/W, Tj = 5 o C) IPS5 4.3 A (TAmbient = 85 o C, IN = 5V, rth = 8 o C/W, Tj = 5 o C) IPS5S 3.8 Rin Recommended resistor in series with IN pin. 5 kω Tr-in (max) Max recommended rise time for IN signal (see fig. ) µs Fr-Isc () Max. frequency in short circuit condition (Vcc = 4V) khz
3 Static Electrical Characteristics (Tj = 5 o C unless otherwise specified.) Symbol Parameter Min. Typ. Max. Units Test Conditions Rds(on) ON state resistance Tj = 5 o C 5 Tj = 5 o mω Vin = 5V, Ids = A C Idss Drain to source leakage current.5 5 Vcc = 4V, Tj = 5 o o C µa Idss Drain to source leakage current 5 5 Vcc = 4V, Tj = 5 o o C V clamp Drain to source clamp voltage Id = ma (see Fig.3 & 4) V clamp Drain to source clamp voltage Id=Ishutdown (see Fig.3 & 4) Vin clamp IN to source clamp voltage V Iin = ma V in th IN threshold voltage.6 Id = 5mA, V ds = 4V Iin, -on ON state IN positive current 5 9 Vin = 5V Iin, -off OFF state IN positive current µa Vin = 5V over-current triggered Switching Electrical Characteristics Vcc = 4V, Resistive Load = 3Ω, Rinput = 5Ω, usec pulse, T j = 5 o C, (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Test Conditions Ton Turn-on delay time Tr Rise time..9.5 See figure Trf Time to (final Rds(on).3%) 3.8 µsec Toff Turn-off delay time.8.5 See figure Tf Fall time.4. Qin Total gate charge 3 nc Vin = 5V Protection Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Tsd Over temperature threshold 65 o C See fig. Isd Over current threshold 35 5 A See fig. V in,min,prot Minimum IN voltage for protection V Treset Minimum time to reset protection 4 µs Vin = V EOI_OT Short circuit energy (see application note) 4 µj Vcc = 4V 3
4 Functional Block Diagram All values are typical DRAIN 47 V Ω kω IN S Q 7.5 V 8 µa R Q T > 65 c I sense I > Isd SOURCE Lead Assignments (D) (D) 3 In D S 3 In D S TO- IPS5 Part Number D PAK (SMD) IPS5S 4
5 Vin 5 V V Vin 9 % % Ids Isd I shutdown t < T reset t > T reset Ids Tr-in 9 % % T Tsd (65 c) T shutdown Vds Td on tr Td off tf Figure - Timing diagram Figure - IN rise time & switching time definitions T clamp Vin L V load Ids Vds Vds clamp ( Vcc ) ( see Appl. Notes to evaluate power dissipation ) Rem : V load is negative during demagnetization 5 v v Vin IN R D S Vds Ids + 4 V - Figure 3 - Active clamp waveforms Figure 4 - Active clamp test circuit 5
6 All curves are typical values with standard footprints. Operating in the shaded area is not recommended Tj = 5 o C Tj = 5 o C % 8% 6% 4% % % 8% 6% 4% % % Figure 5 - Rds ON (mω) Vs Input Voltage (V) Figure 6 - Normalised Rds ON (%) Vs Tj ( o C) ton delay rise time 3% final rdson toff delay fall time Figure 7 - Turn-ON Delay Time, Rise Time & Time to 3% final Rds(on) Vs Input Voltage (V) Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) 6
7 delay on rise time 3% rdson delay off fall time.. Figure 9 - Turn-ON Delay Time, Rise Time & Time to 3% final Rds(on) Vs IN Resistor (Ω) Figure - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor (Ω) Isd 5 C 5 Ilim 5 C Figure - Current Iim. & Ishutdown (A) Vs Vin (V) Figure - Over-current (A) Vs Temperature ( o C) 7
8 rth = 5 C/W rth = 5 C/W rth = 3 C/W T free air 6 C/W rth = 5 C/W rth = 5 C/W SMD '' footprint SMD std. footprint Figure 3a - Max.Cont. Ids (A) Vs Amb. Temperature ( o C) - IPS5 Figure 3b - Max.Cont. Ids (A) Vs Amb. Temperature ( o C) - IPS5S Current path capability should be above this single pulse Hz rth=6 C/W dt=5 C khz rth=6 C/W dt=5 C Load characteristic should be below this curve T=5 C T= C. Vbat = 4 V Tjini = T sd... Figure 4 - Ids (A) Vs Protection Resp. Time (s) IPS5 & IPS5S Figure 5 - Iclamp (A) Vs Inductive Load (mh) 8
9 .. Single pulse rth free air TO, std footprint SMD rth junction to case =.8 C/W Iin,on Iin,off Figure 6 - Transient Thermal Imped. ( o C/W) Vs Time (s) - IPS5/IPS5S Figure 7 - Input current (µa) Vs Junction ( o C) % 5% % 5% % 95% Treset rise time fall time 9% Vds Isd 85% Vin ma 8% Figure 8 - Vin clamp and V clamp Vs Tjunction ( o C) Figure 9 - Turn-on, Turn-off, and treset Vs Tjunction ( o C) 9
10 Case Outline - TO- NOTES: X IRGB -36 Case Outline - D PAK (SMD)
11 Tape & Reel - D PAK (SMD) WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 945 Tel: (3) IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR JAPAN: K&H Bldg., F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 7- Tel: IR HONG KONG: Unit 38, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon, Hong Kong Tel: (85) Data and specifications subject to change without notice. /3/99
IPS031/IPS031S FULLY PROTECTED POWER MOSFET SWITCH. Product Summary
Data Sheet No.PD 5H FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The are fully
More informationIPS022G/IPS024G DUAL/QUAD FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 69-I DUAL/QUAD FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The
More informationIPS021S FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 648-K IPS(S) FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary
More informationIPS0151/IPS0151S FULLY PROTECTED POWER MOSFET SWITCH. Load
Preliminary Data Sheet No.PD 644-G IPS5/IPS5S FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection
More informationIPS031S FULLY PROTECTED POWER MOSFET SWITCH. Product Summary
Data Sheet No.PD 65-J FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS3/IPS3S
More informationIPS031/IPS031S FULLY PROTECTED POWER MOSFET SWITCH. Product Summary R ds(on)
Preliminary Data Sheet No.PD 5-G IPS3/IPS3S FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description
More informationIPS021L FULLY PROTECTED POWER MOSFET SWITCH
Preliminary Data Sheet No.PD 65-G IPSL FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description
More informationIPS024G QUAD FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD6 IPSG QUAD FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPSG
More informationIPS031G/IPS032G SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH. Product Summary
Data Sheet No.PD 5-J SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The
More informationIPS042G DUAL FULLY PROTECTED POWER MOSFET SWITCH. Product Summary
Data Sheet No.PD 653-J IPS4G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description
More informationIPS0551T FULLY PROTECTED POWER MOSFET SWITCH. L oad. Product Summary
Data Sheet No. PD616-C FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The is a fully
More informationIPS022G/IPS024G DUAL/QUAD FULLY PROTECTED POWER MOSFET SWITCH
Preliminary Data Sheet No.PD 69-G IPSG/IPSG DUAL/QUAD FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection
More informationIPS5451/IPS5451S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Data Sheet No.PD6159-K FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Over current shutdown Active clamp E.S.D protection Status feedback Open load detection
More informationIPS1031(S)(R)PbF INTELLIGENT POWER LOW SIDE SWITCH. Product Summary
Data Sheet No. PD60237 revd IPS1031(S)(R)PbF INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized
More informationIPS521/IPS521S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Preliminary Data Sheet No.PD 60158-G IPS521/IPS521S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features Over temperature protection (with auto-restart) Short-circuit protection (current limit) Active
More informationIPS2041(R)(L)PbF INTELLIGENT POWER LOW SIDE SWITCH. Product Summary
Data Sheet No. PD60297 IPS2041(R)(L)PbF INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized
More informationIPS5751/IPS5751S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Data Sheet No.PD6197 IPS5751/IPS5751S FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Over current shutdown Active clamp E.S.D protection Status feedback
More informationIPS511/IPS511S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Preliminary Data Sheet No.PD 60155-G IPS511/IPS511S FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Short-circuit protection (current limit ) Active clamp
More informationIPS1051LPbF / IPS1052GPbF
Data Sheet No. PD60298_B IPS1051LPbF / IPS1052GPbF SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level
More informationIPS1051LPbF / IPS1052GPbF
Data Sheet No. PD60298_B SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized
More informationIR3312(S) PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH
Data Sheet No.PD60211 rev.d IR3312(S) PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp E.S.D protection Input referenced to Vcc
More informationIPS6021(S)(R)PbF INTELLIGENT POWER HIGH SIDE SWITCH
Data sheet No. PD60280 IPS6021(S)(R)PbF INTELLIGENT POWER HIGH SIDE SWITCH Features Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Reverse battery protection (turns
More informationIPS6041(G)(R)(S)PbF INTELLIGENT POWER HIGH SIDE SWITCH
Data sheet No. PD60282 INTELLIGENT POWER HIGH SIDE SWITCH Features Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Reverse battery protection (turns On the MOSFET)
More informationFULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No. PD 60068-I FULLY PROTECTED POWER MOSFET SWITCH Features Controlled slew rate reduces EMI Over temperature protection with auto-restart Linear current-limit protection Active drain-to-source
More informationPROGRAMMABLE CURRENT SENSE HIGH SIDE SWITCH
Data Sheet No. PD60283 revb PROGRAMMABLE CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced to Vcc Over temperature
More informationIR3316(S)PbF LOW EMI CURRENT SENSE HIGH SIDE SWITCH
Data Sheet No. PD60286_C IR3316(S)PbF LOW EMI CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced to Vcc Over temperature
More informationIR3315(S)PbF LOW EMI CURRENT SENSE HIGH SIDE SWITCH. Product Summary Rds(on) 20 mω max. Vcc op. 6 to 32V Current Ratio 2800 Prog. Ishutdown 3 to 30A
Data Sheet No. PD60285 IR3315(S)PbF LOW EMI CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced to Vcc Over temperature
More informationAutomotive IPS. Low side AUIPS1025R INTELLIGENT POWER LOW SIDE SWITCH. Automotive grade
Automotive grade Automotive IPS Low side INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Up to 50kHz Logic level input ESD protection Description
More informationIPS7091(G)(S)PbF INTELLIGENT POWER HIGH SIDE SWITCH
Data sheet N 60291_C IPS7091(G)(S)PbF INTELLIGENT POWER HIGH SIDE SWITCH Features Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Active clamp Open load detection
More informationAUIPS2031R INTELLIGENT POWER LOW SIDE SWITCH
December, 9 th 2010 Automotive grade INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn
More informationINTELLIGENT HIGH SIDE MOSFET POWER SWITCH
Data Sheet 60049- IR6220 (NOTE: For new designs, we recommend IR s new products IPS521 and IPS521S) INTEIGENT IG SIDE MOSFET POWER SWITC Features PWM current limit for short circuit protection Over-temperature
More informationAUIPS2051L/AUIPS2052G
May 9 th, 2012 Automotive grade AUIPS2051L/AUIPS2052G INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection
More informationAUIPS2031R INTELLIGENT POWER LOW SIDE SWITCH. Automotive grade. Product Summary
Automotive grade AUIPS2031R INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off
More informationAUIPS1021(S)(R) INTELLIGENT POWER LOW SIDE SWITCH. Product Summary
February, 28th 2011 Automotive grade AUIPS1021(S)(R) INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection
More informationINTELLIGENT POWER LOW SIDE SWITCH
May 9 th 2012 Automotive grade AUIPS2041(R)(L) INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized
More informationAUIPS7121R CURRENT SENSE HIGH SIDE SWITCH
August, 27th 2009 Automotive grade AUIPS7121R CURRENT SENSE HIGH SIDE SWITCH Features Suitable for 24V systems Over current shutdown Over temperature shutdown Current sensing Active clamp Optimized Turn
More informationAUIPS1011(S)(R) INTELLIGENT POWER LOW SIDE SWITCH
Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI Diagnostic on the input current Description The is a three
More informationAUIPS1051L / AUIPS1052G
May, 9th 2012 Automotive grade SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection
More informationSINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH
Automotive Grade AUIPS1051L / AUIPS1052G SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD
More informationAUIPS1041(L)(R)/AUIPS1042G
May, 9th 2012 Automotive grade AUIPS1041(L)(R)/AUIPS1042G SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic
More informationIR2105 HALF BRIDGE DRIVER. Features. Product Summary. Packages. Description. Typical Connection
Features Floating channel designed for bootstrap operation Fully operational to +6V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from to 2V Undervoltage lockout V Schmitt-triggered
More informationIR4007K. Switched Mode Power Supply IC
ADANCE INFORMATION Data SheetNo. PD608 IR007K Descriptions The IR007 is a dual mode voltage and current controller combined with a MOSFET in a single Package. The IR007 is designed for use in AC/DC and
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD- 9385A SMPS MOSFET IRFR8N5D IRFU8N5D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to Reduce Switching Losses
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD- 92005 HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits l Low
More informationLOW EMI CURRENT SENSE HIGH SIDE SWITCH
Automotive grade AUIR3320S LOW EMI CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced to Vcc Over temperature
More informationIRFDC20. HEXFET Power MOSFET PD V DSS = 600V. R DS(on) = 4.4Ω I D = 0.32A
HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements PD -9.1228 IRFDC20 V DSS = 600V R
More informationIRF7342. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω SO-8. Thermal Resistance. 1 PD Top View
l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from
More informationIRL3102S. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013W I D = 61A PRELIMINARY
l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically
More informationAUIPS6044G INTELLIGENT POWER HIGH SIDE SWITCH. Product Summary
December, 10th 2011 Automotive grade AUIPS6044G INTELLIGENT POWER HIGH SIDE SWITCH Features Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Reverse battery protection
More informationIRFZ44ES/L. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.023Ω I D = 48A PRELIMINARY
l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
More informationIRF7555. HEXFET Power MOSFET V DSS = -20V. R DS(on) = 0.055Ω
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 93935B SMPS MOSFET IRFR3708 IRFU3708 Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 9399A IRFR9N20D IRFU9N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.38Ω 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching
More informationHIGH VOLTAGE HALF BRIDGE
Preliminary Data Sheet No. PD0-C IR0HDC0U-P HIGH LTAGE HALF BRIDGE Features Output Power IGBT s in half-bridge configuration 00V rated breakdown voltage High side gate drive designed for bootstrap operation
More informationA I DM Pulsed Drain Current 10 P C = 25 C Power Dissipation 2.0
l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs
More informationAUIPS6021(S)(R) INTELLIGENT POWER HIGH SIDE SWITCH. Features. Product Summary. Rds(on) 30m max. Vclamp 39V I Limit 32A Open load 3V / 1.1A.
Nk you Features September, 12th 2011 Automotive grade AUIPS6021(S)(R) INTELLIGENT POWER HIGH SIDE SWITCH Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Reverse battery
More informationAUIPS6021(S)(R) INTELLIGENT POWER HIGH SIDE SWITCH. Automotive grade
Automotive grade AUIPS6021(S)(R) INTELLIGENT POWER HIGH SIDE SWITCH Features Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Reverse battery protection (turns On
More informationIRF V, N-CHANNEL
PD - 90518 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF360 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF360 400V 0.20Ω 25A The HEXFET technology
More informationV DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationPROGRAMMABLE CURRENT SENSE HIGH SIDE SWITCH
December, 10th 2010 Automotive grade AUIR3313(S) PROGRAMMABLE CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. SMPS MOSFET PD 984A IRFSL9N60A HEXFET Power
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD-93772A HEXFET Power MOSFET V DSS Rds(on) max I D 400V.0Ω 5.5A Benefits l Low Gate
More informationIRF9240 THRU-HOLE (TO-204AA/AE) Absolute Maximum Ratings. Features: 1 PD REPETITIVE AVALANCHE AND dv/dt RATED.
PD - 90420 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF9240 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9240-200V 0.5Ω -11A The HEXFET technology
More informationAUIR3317(S) LOW EMI CURRENT SENSE HIGH SIDE SWITCH
August, 25th 2011 Automotive grade LOW EMI CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Over current shutdown Active clamp ESD protection Input referenced to Vcc Over temperature shutdown
More informationAUIPS6041(G)(R)(S) INTELLIGENT POWER HIGH SIDE SWITCH. Product Summary
March, 12th 2012 Automotive grade AUIPS6041(G)(R)(S) INTELLIGENT POWER HIGH SIDE SWITCH Features Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Reverse battery protection
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationPROTECTED HIGH SIDE SWITCH FOR AUTOMOTIVE DC MOTOR DRIVE
PROTECTED HIGH SIDE SWITCH FOR AUTOMOTIVE DC MOTOR DRIVE August 28 Automotive Grade AUIR3341S Features Up to 2Khz PWM switching capability Charge pump for DC operation Active Dv/Dt control Load current
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationAUIR3316(S) LOW EMI CURRENT SENSE HIGH SIDE SWITCH
November, 14th 2010 Automotive grade AUIR3316(S) LOW EMI CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced to
More informationIRFF110 JANTXV2N V, N-CHANNEL. Absolute Maximum Ratings. Features: 1 PD C. REPETITIVE AVALANCHE AND dv/dt RATED
PD - 90423C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V.60Ω 3.5A IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556
More informationParameter Min. Typ. Max. Units Conditions. µa DS = 200V, V GS = 0V 250 V DS = 160V, V GS = 0V, T J = 150 C
HEXFET Power MOSFET V DSS = 200V R DS(on) = 0.5Ω Description I D = 8A Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 8 I D @ T C = 0 C Continuous Drain
More informationD-Pak I-Pak up to 1.5 watts are possible in typical surface mount
l Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Seventh Generation HEXFET Power MOSFETs from
More informationSMPS MOSFET. V DSS R DS(on) max (mω) I D
SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
More informationHEXFET MOSFET TECHNOLOGY
PD-91551D POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) ID IRFN350 0.315 Ω 14A IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY
More informationHIGH AND LOW SIDE DRIVER. Product Summary VOFFSET VOUT. Description
Features n Floating channel designed for bootstrap operation Fully operational to +4V Tolerant to negative transient voltage dv/dt immune n Gate drive supply range from 1 to 2V n Undervoltage lockout for
More informationT J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 24 V V (BR)DSS / T J
PD 97263B HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G
More informationIRFE230 JANTXV2N6798U SURFACE MOUNT (LCC-18) 200V, N-CHANNEL REF:MIL-PRF-19500/557. Absolute Maximum Ratings PD-91715C.
PD-975C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-8) Product Summary Part Number BVDSS RDS(on) ID IRFE230 200V 0.40Ω 5.5A IRFE230 JANTX2N6798U JANTXV2N6798U REF:MIL-PRF-9500/557
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationIRFR24N15D IRFU24N15D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationAUIPS7081(R)(S) INTELLIGENT POWER HIGH SIDE SWITCH. July, 17th, 2014 Automotive grade
July, 17th, 2014 Automotive grade AUIPS7081(R)(S) INTELLIGENT POWER HIGH SIDE SWITCH Features Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Active clamp Open load
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationPOWER MOSFET SURFACE MOUNT (SMD-1) 200V, N-CHANNEL. Absolute Maximum Ratings PD-94236C
PD-94236C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-) IRHN5725SE 2V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHN5725SE K Rads (Si).6Ω 3A SMD- International
More informationSMPS MOSFET. V DSS R DS (on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching SMPS MOSFET PD 987A IRFS9N60A HEXFET Power MOSFET V DSS R DS (on) max I D 600V 0.75Ω 9.2A Benefits
More informationIRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/ V, N-CHANNEL
PD - 93986A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)
More informationVNP35N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP35N07 70 V 0.028 Ω 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD - 9790 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30W-S Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationIRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
More information1 = D 2 = S 3 = S 4 = G
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRF9230 JANTXV2N6806
PD-90548D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE -TO-204AE (TO-3) Product Summary Part Number BVDSS RDS(on) ID IRF9230-200V 0.80 Ω -6.5A IRF9230 JANTX2N6806 JANTXV2N6806 REF:MIL-PRF-19500/562
More informationV DSS R DS(on) max Qg. 560 P C = 25 C Maximum Power Dissipation g 140 P C = 100 C Maximum Power Dissipation g Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIRFR3806PbF IRFU3806PbF
PD - 9733 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationn Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight
PD - 9472 HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International
More information