IRIS-A6131 INTEGRATED SWITCHER. Features Small sized 8-pin DIP type full molded package, optimum IC for lowheight

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1 Data Sheet No. PD 96932A Features Small sized 8pin DIP type full molded package, optimum IC for lowheight SMPS Offtimer circuit is provided on the monolithic control IC Low startup circuit current (ua typ) Low circuit current at operation (.5mA typ) Avalanche energy guaranteed MOSFET with high VDSS The builtin power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. No VDSS derating is required. Builtin Startup circuit (the power loss in the startup circuit is reduced by cutting off the startup circuit after the IC starts its operation.) Auto Burst Standby (realizing input power<.w at no load) Auto Bias Function (stable burst operation without the interference on transformer) Two operational modes by auto switching functions For normal operation: PRC mode For standby operation (at light load): Burst mode Builtin Leading Edge Blanking Function Builtin constant voltage drive circuit Various kinds of protection functions Pulsebypulse Overcurrent Protection (OCP) Overload Protection with auto recovery (OLP) Type Overvoltage Protection with latch mode (OVP) Thermal Shutdown with latch mode (TSD) IRISA63 INTEGRATED SWITCHER Package Outline 8 Lead PDIP Descriptions IRISA63 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for PRC flyback converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply system reducing external component count and simplifying the circuit design. Note: PRC is abbreviation for Pulse Ratio Control (Onwidth control with fixed OFFtime). Typical Connection Diagram Key Specifications MOSFET VDSS(V) RDS(ON) MAX Pout(W) Note ACinput(V) IRISA Ω /2±5% D OCP D Vcc NC Startup IRISA63 FB Note : The pout (W) represents the thermal rating at PRC Operation. The peak power output is obtained by approximating 2 to 4% of the above listed value. When the output voltage is low and ONduty is narrow, the Pout (W) shall become lower than that of above value.

2 IRISA63 Absolute Maximum Ratings (Ta=25ºC) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Terminals Max. Ratings Units Note IDpeak Drain Current * A Single Pulse IDMAX Maximum switching current A V3=.86V Ta=2~25ºC Single Pulse VDD=99V,L=2mH IL=2.A EAS Single pulse avalanche energy * mj V OCP O.C.P. pin Voltage 3.5~6 V V CC Input voltage for control part V V FB/OLP F.B/O.L.P pin voltage 43.5~ V V startup Startup pin voltage 53.3~6 V PD Power dissipation for MOSFET * W *5 PD2 Power dissipation for control part (Control IC) *4 Internal frame temperature 23.4 W Specified by Vcc I CC Refer to recommended TF in operation 2 ~ 25 ºC operating temperature Top Operating ambient temperature 2 ~ 25 ºC Tstg Storage temperature 4 ~ 25 ºC Tch Channel temperature 5 ºC * Refer to MOSFET A.S.O curve *2 Refer to MOSFET TchEAS curve *3 Refer to MOSFET TaPD curve *4 Refer to TFPD2 curve for Control IC *5 When embedding this hybrid IC onto the printed circuit board (board size 5mm x 5mm) 2

3 IRISA63 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25ºC, Vin=2V,unless otherwise specified) Ratings Test Symbol Definition MIN TYP MAX Units Conditions V CC(ON) Operation start voltage V VCC= 9.2V V CC(OFF) Operation stop voltage 9 V VCC=9.2 9.V I CC(ON) Circuit current in operation 4 ma I CC(OFF) Circuit current in nonoperation 5 µa VCC=4V V CC(bias) Auto bias threshold voltage V VCC=2 9.6V Vcc(bias) Vcc(OFF).2 V TOFF(MAX) Maximum OFF time µsec V OCP O.C.P. threshold voltage V Tbw Leading edge blanking time nsec Vburst Burst threshold voltage V V OLP O.L.P. threshold voltage V IOLP Outflow current at O.L.P operation µa I FB(MAX) Maximum F.B. current µa I ST ART UP Startup current µa VCC=5V I START(leak) Startup circuit leakage current 3 µa V CC(OVP) O.V.P operation voltage V VCC= 34.V I CC(H) Latch circuit sustaining current *6 2 µa VCC= V V CC(La.OFF) Latch circuit release voltage * V VCC= V Tj(TSD) Thermal shutdown operating temperature 35 ºC *6 The latch circuit means a circuit operated O.V.P and T.S.D. Electrical Characteristics (for MOSFET) (Ta=25ºC) unless otherwise specified Symbol Definition Ratings MIN TYP MAX VDSS DraintoSource breakdown voltage 5 IDSS Drain leakage current Units Test Conditions ID=3µA V3=V(short) VDS=5V V3=V(short) RDS(ON) Onresistance 3.95 Ω ID=.4A tf Switching time 25 nsec θchf Thermal resistance *7 *7 Internal frame temperature (TF) is measured at the root of the Pin 3. 3 V µa 52 ºC/W Between channel and internal frame 3

4 IRISA63 IRISA63 A.S.O. temperature derating coefficient curve IRISA63 MOSFET A.S.O. Curve Ta=25ºC Single Pulse A.S.O. temperature derating coefficient[%] Drain Current ID[A]. Drain current limit by ON resistance ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. ms.ms Internal frame temperature TF [ºC]. DraintoSource Voltage VDS[V] IRISA63 Avalanche energy derating curve EAS temperature derating coefficient [%] Channel temperature Tch [ºC] 4

5 IRISA63 IRISA63 MOSFET TaPD Curve IRISA63 MIC TFPD2 Curve.6.4 PD=.35[W].6.4 PD2=.5[W].2.2 Power dissipation PD[W] Power dissipation PD2[W] Ambient temperature Ta[ºC] Internal frame temperature TF[ºC] IRISA63 Transient thermal resistance curve Transient thermal resistance θcha[ /W].. µ µ µ m m m time t [sec] 5

6 IRISA63 Block Diagram Vcc 2 Startup 5 UVLO Internal Bias Latch Delay OVP TSD OFF Timer Drive Power MOS FET 8 D 7 D PWM Latch S Q R Bias OLP Burst Blanking FB Discharge OCP Source/OCP Buffer 3 4 FB/OLP Lead Assignments S/OCP VCC FB/OLP Pin Assignment (Top View) Drain Drain N.C. Startup Pin No. Symbol Description Function S/OCP Source Pin/OCP MOSFET source / Over current protect 2 V CC Power supply Pin Input of power supply for control circuit 3 4 FB/OLP Ground Pin Feedback/OLP pin Ground Input of constant voltage control signal/over load protection signal 5 Startup Startup pin Input of Startup current 6 N.C. Not Connected 7 Drain Drain Pin MOSFET drain 8 Drain Drain Pin MOSFET drain Other Functions O.V.P. Overvoltage Protection Circuit T.S.D. Thermal Shutdown Circuit 6

7 IRISA63 Case Outline A63 IRIR a b c a. Type Number b. Lot Number st letter:the last digit of year 2 nd letter:month ( to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec.) 3 rd letter:week ~3 : Arabic numerals c. Registration Number Material of Pin : Cu Treatment of Pin : Solder plating Weight: Approx..5g Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC FAX: (3) Visit us at for sales contact information. 7