IR2106/IR21064 IR2107/IR21074 HIGH AND LOW SIDE DRIVER
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- Drusilla Merritt
- 6 years ago
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1 Features Floating channel designed for bootstrap operation Fully operational to +00V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from 0 to 0V Undervoltage lockout for both channels chmitt triggered input logic Matched propagation delay for both channels Logic and power ground +/- V offset. Lower di/dt gate driver for better noise immunity Outputs in phase with inputs (I0/I0) Outputs out of phase with inputs (I0/I0) Description The I0/I0/I0/I0 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 00 volts. Typical Connection Preliminary Data Sheet No. PD0I HIGH AND W SIDE DIVE Product Summary V OFFSET I O +/- V OUT t on/off (typ.) Delay matching Packages Lead SOIC Lead PDIP I0/I0 I0/I0 00V max. 0 ma / 0 ma 0-0V 0 ns 0 ns Lead SOIC Lead PDIP up to 00V / / TO AD up to 00V I0/I0 I0/I0 / / TO AD S S
2 I0/I0/I0/I0 Absolute Maximum atings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. Units High side floating absolute voltage -0. High side floating supply offset voltage V High side floating output voltage Low side and logic fixed supply voltage -0. V Low side output voltage V IN Logic input voltage ( & - I0/I0) ( & - I0/I0) S S Logic ground (I0/I0 only) d /dt Allowable offset supply voltage transient 0 V/ns P D Package power T A + C ( lead PDIP).0 ( lead SOIC) 0. ( lead PDIP). W ( lead SOIC).0 th JA Thermal resistance, junction to ambient ( lead PDIP) ( lead SOIC) 00 ( lead PDIP) C/W ( lead SOIC) 0 T J Junction temperature 0 T S Storage temperature -0 0 C T L Lead temperature (soldering, 0 seconds) 00 ecommended Operating Conditions The Input/Output logic timing diagram is shown in figure. For proper operation the device should be used within the recommended conditions. The and S offset rating are tested with all supplies biased at V differential. Symbol Definition Min. Max. Units VB High side floating supply absolute voltage High side floating supply offset voltage Note 00 V High side floating output voltage Low side and logic fixed supply voltage 0 0 V Low side output voltage 0 V V IN Logic input voltage ( & - I0/I0) ( & - I0/I0) S S Logic ground (I0/I0 only) - T A Ambient temperature -0 C Note : Logic operational for of - to +00V. Logic state held for of -V to -S. V
3 Dynamic Electrical Characteristics IAS (, S ) = V, S =, C L = 000 pf, T A = C. I0/I0/I0/I0 Symbol Definition Min. Typ. Max. Units Test Conditions ton Turn-on propagation delay 0 0 = 0V toff Turn-off propagation delay 0 0 = 0V or 00V MT Delay matching, HS & LS turn-on/off 0 0 nsec tr Turn-on rise time 0 0 = 0V tf Turn-off fall time 0 0 = 0V Static Electrical Characteristics IAS (, S ) = V, S = and T A = C unless otherwise specified. The V IL, V IH and I IN parameters are referenced to S / and are applicable to the respective input leads: and (I0/I0) and and (I0/I0). The V O, I O and on parameters are referenced to and are applicable to the respective output leads: and. Symbol Definition Min. Typ. Max. Units Test Conditions V IH Logic input voltage (I0/I0) Logic 0 input voltage (I0/I0) V IL Logic 0 input voltage (I0/I0) Logic input voltage (I0/I0). 0. V = 0V to 0V = 0V to 0V V OH High level output voltage, IAS - V O 0.. I O = 0 ma V OL Low level output voltage, V O I O = 0 ma I LK Offset supply leakage current 0 = = 00V I QBS Quiescent S supply current V IN = 0V or V I QCC Quiescent supply current ma V IN = 0V or V I IN+ Logic input bias current 0 0 µa V IN = V (I0()) V IN = 0V (I0()) I IN- Logic 0 input bias current V IN = 0V (I0()).0 V IN = V (I0()) + and S supply undervoltage positive going S+ threshold - and S supply undervoltage negative going S- threshold V H Hysteresis SH I O+ Output high short circuit pulsed current 0 00 V O = 0V, PW 0 µs I O- Output low short circuit pulsed current 0 0 ma V O = V, PW 0 µs
4 I0/I0/I0/I0 Functional Block Diagram 0 DELAY VCC VS VB FILTE HV E S Q GENEATO / / 0 DELAY VCC VS VB FILTE HV E S Q GENEATO / /
5 I0/I0/I0/I0 0 DELAY VCC VS VB FILTE HV E S Q GENEATO / / +V +V 0 DELAY VCC VS VB FILTE HV E S Q GENEATO / / +V +V
6 I0/I0/I0/I0 Lead Definitions Symbol Description Logic input for high side gate driver output (), in phase (I0/I0) Logic input for high side gate driver output (), out of phase (I0/I0) Logic input for low side gate driver output (), in phase (I0/I0) Logic input for low side gate driver output (), out of phase (I0/I0) Logic Ground (I0 and I0 only) High side floating supply High side gate drive output High side floating supply return Low side and logic fixed supply Low side gate drive output Low side return Lead Assignments Lead PDIP Lead SOIC I0 I0S Lead PDIP Lead SOIC I0 I0S
7 I0/I0/I0/I0 Lead PDIP Lead SOIC I0 I0S Lead PDIP Lead SOIC I0 I0S
8 I0/I0/I0/I0 Lead PDIP Lead SOIC
9 I0/I0/I0/I0 Lead PDIP Lead SOIC (narrow body)
10 I0/I0/I0/I0 0% 0% Figure. Input/Output Timing Diagram t on 0% 0% t r t off t f 90% 90% 0% 0% 0% 0% Figure. Switching Time Waveform Definitions 0% 0% 0% MT MT 90% Figure. Delay Matching Waveform Definitions WOLD HEADQUATES: Kansas St., El Segundo, California 90 Tel: (0) I GEAT BITAIN: Hurst Green, Oxted, Surrey H 9BB, UK Tel: I CANADA: Lincoln Court, Brampton, Ontario LT Z Tel: (90) -00 I GEMANY: Saalburgstrasse, 0 Bad Homburg Tel: I ITALY: Via Liguria 9, 00 Borgaro, Torino Tel: I FA EAST: K&H Bldg., F, 0- Nishi-Ikebukuro -Chome, Toshima-Ku, Tokyo, Japan Tel: 9 00 I SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, -, Singapore 99 Tel: 0 I TAIWAN: Fl. Suite D..0, Sec., Tun Haw South oad, Taipei, 0, Taiwan Tel: Data and specifications subject to change without notice. //99 0
IR2153Z PD SELF-OSCILLATING HALF-BRIDGE DRIVER. Features. Product Summary
Features Floating channel designed for bootstrap operation Fully operational to +600 Tolerant to negative transient voltage d/dt immune Undervoltage lockout Programmable oscillator frequency 1 f = 1.4
IR2105 HALF BRIDGE DRIVER. Features. Product Summary. Packages. Description. Typical Connection
Features Floating channel designed for bootstrap operation Fully operational to +6V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from to 2V Undervoltage lockout V Schmitt-triggered
HIGH AND LOW SIDE DRIVER. Product Summary VOFFSET VOUT. Description
Features n Floating channel designed for bootstrap operation Fully operational to +4V Tolerant to negative transient voltage dv/dt immune n Gate drive supply range from 1 to 2V n Undervoltage lockout for
HIGH AND LOW SIDE DRIVER
Data Sheet No. PD-O Features Floating channel designed for bootstrap operation Fully operational to +V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from to V Undervoltage
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features Floating channel designed for bootstrap operation Fully operational to +600V olerant to negative transient voltage dv/dt immune Undervoltage lockout Programmable oscillator frequency 1 f = 1.4
IR2153/IR2153D SELF-OSCILLATING HALF-BRIDGE DRIVER. Features. Product Summary. Packages. Description. Typical Connections
Features Integrated 600V halfbridge gate driver 15.6V zener clamp on Vcc True micropower start up Tighter initial deadtime control Low temperature coefficient deadtime Shutdown feature (1/6th Vcc) on C
IR2153/IR2153D SELF-OSCILLATING HALF-BRIDGE DRIVER. Features. Product Summary. Packages. Description. Typical Connections
Features Floating channel designed for bootstrap operation Fully operational to 600V Tolerant to negative transient voltage dv/dt immune Undervoltage lockout Programmable oscillator frequency 1 f = 1.4
Packages. Crossconduction. Input logic. Part. prevention logic COM HIN/LIN no none 21814
Data Sheet No. PD014-D Features Floating channel designed for bootstrap operation Fully operational to +00V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from 10 to 20V Undervoltage
IR2304(S) & (PbF) HALF-BRIDGE DRIVER Product Summary
Data Sheet No. PD60200 revb Features Floating channel designed for bootstrap operation to +600V. Tolerant to negative transient voltage dv/dt immune Gate drive supply range from 10 to 20V Under voltage
Packages. Input logic. Part HIN/LIN yes
Data Sheet No. PD60209 revc Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from 10 to
V OFFSET. Description
Features n Floating channel designed for bootstrap operation Fully operational to +6V Tolerant to negative transient voltage dv/dt immune n Gate drive supply range from 1 to 2V n Undervoltage lockout for
Half-Bridge Driver IR25606SPBF. Features. Product Summary. Description. Package Options. Ordering Information
Half-Bridge Driver Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from 10 to 20V Undervoltage
IR2122(S) CURRENT SENSING SINGLE CHANNEL DRIVER
Preliminary Data Sheet No. PD60130-K CURRENT SENSING SINGLE CHANNEL DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dv/dt
200V HO V DD V B HIN SD HIN SD V S TO LOAD LIN V CC V SS LIN COM LO
Data Sheet No. PD6195-E Features Floating channel designed for bootstrap operation Fully operational to Tolerant to negative transient voltage, dv/dt immune Gate drive supply range from 1 to V Undervoltage
V OFFSET 600V max. I O +/- 130 ma / 270 ma V OUT. Packages
Data Sheet No. PD-S Features Floating channel designed for bootstrap operation Fully operational to +V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from to 2V Undervoltage
V OFFSET. Packages. 14-Lead PDIP
Preliminary Data Sheet No. PD63 rev.p Features Floating channel designed for bootstrap operation Fully operational to +12V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from
IR2302(S) & (PbF) HALF-BRIDGE DRIVER. Packages
Data Sheet No. PD7 Rev.A Features Floating channel designed for bootstrap operation Fully operational to +V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from to V Undervoltage
IR2112(S) HIGH AND LOW SIDE DRIVER. Features. Product Summary. Packages. Description. Typical Connection V OFFSET. 600V max. 200 ma / 420 ma 10-20V
Features Floating channel designed for bootstrap operation Fully operational to +V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from 1 to 2V Undervoltage lockout for both
IRS2103(S)PbF HALF-BRIDGE DRIVER. Features. Product Summary. Packages. Description. Typical Connection. 600 V max. 130 ma/270 ma 10 V - 20 V V OFFSET
Data Sheet No. PD6263 Features Floating channel designed for bootstrap operation Fully operational to +6 V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range from 1 V to 2 V Undervoltage
HIGH VOLTAGE HALF BRIDGE
Preliminary Data Sheet No. PD0-C IR0HDC0U-P HIGH LTAGE HALF BRIDGE Features Output Power IGBT s in half-bridge configuration 00V rated breakdown voltage High side gate drive designed for bootstrap operation
IR2110 HIGH AND LOW SIDE DRIVER. Features. Product Summary. Packages. Description. Typical Connection. 500V max. V OFFSET 10-20V VOUT.
Features n Floating channel designed for bootstrap operation Fully operational to +5V Tolerant to negative transient voltage dv/dt immune n Gate drive supply range from 1 to 2V n Undervoltage lockout for
High and Low Side Driver
High and Low Side Driver Features Product Summary Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage dv/dt immune Gate drive supply range
IRS2104(S)PbF HALF-BRIDGE DRIVER. Features. Product Summary. Packages. Description. Typical Connection V OFFSET. 600 V max. 130 ma/270 ma 10 V - 20 V
Features Floating channel designed for bootstrap operation Fully operational to + V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range from V to V Undervoltage lockout. V, V,
IRS2113MPBF HIGH- AND LOW-SIDE DRIVER
February 8, 2012 IRS2113MPBF HIGH- AND LOW-SIDE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage dv/dt immune Gate drive
IRS2181/IRS21814(S)PbF
Features Floating channel designed for bootstrap operation Fully operational to + V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range from V to V Undervoltage lockout for both
High and Low Side Driver
High and Low Side Driver Features Product Summary Floating channel designed for bootstrap operation Fully operational to +1200 V Tolerant to negative transient voltage dv/dt immune Gate drive supply range
IR2112(S) & (PbF) HIGH AND LOW SIDE DRIVER
Features Floating channel designed for bootstrap operation Fully operational to +6V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from 1 to 2V Undervoltage lockout for both
IRS2110(-1,-2,S)PbF IRS2113(-1,-2,S)PbF HIGH AND LOW SIDE DRIVER. Features. Product Summary. Packages
Features Floating channel designed for bootstrap operation Fully operational to +5 V or +6 V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range from 1 V to 2 V Undervoltage lockout
IRS2183/IRS21834(S)PbF
Data Sheet No. PD Features Floating channel designed for bootstrap operation Fully operational to + V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range from V to V Undervoltage
High and Low Side Driver
High and Low Side Driver Features Product Summary Floating channel designed for bootstrap operation Fully operational to 200V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range
IRS21844MPBF HALF-BRIDGE DRIVER
November 19, 2010 HALF-BRIDGE DRIVER Features Floating channel designed for bootstrap operation Fully operational to + 600 V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range
IRS2184/IRS21844(S)PbF
Data Sheet No. PD Features Floating channel designed for bootstrap operation Fully operational to + V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range from V to V Undervoltage
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features Floating channel designed for bootstrap operation Fully operational to +600V olerant to negative transient voltage dv/dt immune Undervoltage lockout Programmable oscillator frequency 1 f = 1.4
IPS021L FULLY PROTECTED POWER MOSFET SWITCH
Preliminary Data Sheet No.PD 65-G IPSL FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description
Not recommended for new designs. No replacement is available
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IPS022G/IPS024G DUAL/QUAD FULLY PROTECTED POWER MOSFET SWITCH
Preliminary Data Sheet No.PD 69-G IPSG/IPSG DUAL/QUAD FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection
IPS0151/IPS0151S FULLY PROTECTED POWER MOSFET SWITCH. Load
Preliminary Data Sheet No.PD 644-G IPS5/IPS5S FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection
IRF7555. HEXFET Power MOSFET V DSS = -20V. R DS(on) = 0.055Ω
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (
HIGH VOLTAGE HALF BRIDGE
Preliminary Data Sheet No. PD0-D IR0HDC0U-P HIGH LTAGE HALF BRIDGE Features Output Power IGBT s in half-bridge configuration 55V rated breakdown voltage High side gate drive designed for bootstrap operation
IPS521/IPS521S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Preliminary Data Sheet No.PD 60158-G IPS521/IPS521S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features Over temperature protection (with auto-restart) Short-circuit protection (current limit) Active
Packages. Feature Comparison. Crossconduction. Input logic. Part COM HIN/LIN no none 21064
DS No.PD6266 Rev A Features Floating channel designed for bootstrap operation Fully operational to +6 V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range from 1 V to 2 V Undervoltage
IPS031/IPS031S FULLY PROTECTED POWER MOSFET SWITCH. Product Summary R ds(on)
Preliminary Data Sheet No.PD 5-G IPS3/IPS3S FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description
IRS2117/IRS2118(S)PbF
Data Sheet No. PD227 IRS2117/IRS211(S)PbF Features Floating channel designed for bootstrap operation Fully operational to + V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range
SCHOTTKY RECTIFIER. Description/Features 2.38 (0.09) 2.19 (0.08) 1.14 (0.04) 0.89 (0.03) 0.58 (0.02) 0.46 (0.02) (0.41) 9.40 (0.
CWQ06FN SCHOTTKY ECTIFIE Amp D-Pak (TO-5AA) Major atings and Characteristics Characteristics CWQ06FN Units I F(AV) ectangular A waveform V M 60 V I FSM @ tp = 5 µs sine 30 A V F @ 6 Apk, T = 5 C J 0.57
IRF7342. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω SO-8. Thermal Resistance. 1 PD Top View
l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from
IRF9240 THRU-HOLE (TO-204AA/AE) Absolute Maximum Ratings. Features: 1 PD REPETITIVE AVALANCHE AND dv/dt RATED.
PD - 90420 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF9240 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9240-200V 0.5Ω -11A The HEXFET technology
V OFFSET V OUT. Package V B V S
Features Gate drive supply range from V to V Undervoltage lockout for V BS and V CC. V and V input logic compatible Tolerant to negative transient voltage Matched propagation delays for all channels RoHS
SCHOTTKY RECTIFIER 30 V 3.65 (0.14 4) DIA (0.139) 5.30 (0.208) 5.50 (0.217) 4.50 (0.177) (2 PL C S.) 4.30 (0.170) 3.70 (0.145) 2.20 (0.
PD-20557 rev. B /99 SCHOTTKY ECTIFIE 72CPQ030 70 Amp TO-247AC Major atings and Characteristics Characteristics 72CPQ030 Units I F(AV) ectangular 70 A waveform V M 30 V I FSM @ tp = 5 µs sine 280 A V F
IRF V, N-CHANNEL
PD - 90518 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF360 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF360 400V 0.20Ω 25A The HEXFET technology
IRS212(7, 71, 8, 81)(S)PbF
CURRENT SENSG SGLE CHANNEL DRIVER Features Floating channel designed for bootstrap operation Fully operational to + V Tolerant to negative transient voltage dv/dt immune Application-specific gate drive
SMPS MOSFET. V DSS R DS(on) max I D
PD- 9385A SMPS MOSFET IRFR8N5D IRFU8N5D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to Reduce Switching Losses
IR Series 25TTS..FP PHASE CONTROL SCR TO-220 FULLPAK V T I TSM V RRM. 800 to 1600V < 16A = 300A. Bulletin I2135 rev.
IR Series 25TTS..FP PHASE CONTROL SCR TO-220 FULLPAK Description/Features The 25TTS..FP IR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control
IRFF110 JANTXV2N V, N-CHANNEL. Absolute Maximum Ratings. Features: 1 PD C. REPETITIVE AVALANCHE AND dv/dt RATED
PD - 90423C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V.60Ω 3.5A IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556
RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Product Summary. Description
Features RADIATION HARDENED HIGH AND W SIDE GATE DRIER Product Summary n Total dose capability to 100 krads(si) n Floating channel designed for bootstrap operation n Fully operational to +400 n Tolerant
SMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 9399A IRFR9N20D IRFU9N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.38Ω 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching
SMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. SMPS MOSFET PD 984A IRFSL9N60A HEXFET Power
SMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD- 92005 HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits l Low
1 = D 2 = S 3 = S 4 = G
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
Features RADIATION HARDENED HIGH AND W SIDE GATE DRIER n Total dose capability to 100 krads(si) n Floating channel designed for bootstrap operation n Fully operational to +400 n Tolerant to negative transient
Automotive Grade AUIRS2301S HIGH AND LOW SIDE DRIVER
January 14, 2011 Automotive Grade AUIRS2301S HIGH AND LOW SIDE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dv/dt
HVIC TM. Single Low-Side Driver IC IRS44273LPBF. Product Summary
PBF HVIC TM Features CMOS Schmitt-triggered inputs Under voltage lockout 3.3V logic compatible Output in phase with input Leadfree, RoHS compliant Typical Applications General Purpose Gate Driver DC-DC
3-PHASE BRIDGE DRIVER
Data Sheet No. PD-6.33E IR2132 Features n Floating channel designed for bootstrap operation Fully operational to +6V Tolerant to negative transient voltage dv/dt immune n Gate drive supply range from 1
TF2103. Half-Bridge Gate Driver. Description. Features. Applications. Ordering Information. Typical Application. Advance Info.
Features Floating high-side driver in bootstrap operation to 600V Drives two N-channel MOSFETs or IGBTs in a half bridge configuration 290mA source/600ma sink output current capability Outputs tolerant
PRELIMINARY Features Benefits SUPER Absolute Maximum Ratings Parameter Max. Units
PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins High abort circuit
IR4426/IR4427/IR4428(S) & (PbF) DUAL LOW SIDE DRIVER
Data Sheet No. PD60177 Rev. F Features Gate drive supply range from 6 to 20V CMOS Schmitt-triggered inputs Matched propagation delay for both channels Outputs out of phase with inputs (IR4426) Outputs
Linear Derating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to C
P- 93768A Si4435Y HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S S S 2 3 8 7 6 A V SS = -30V G 4 5 R S(on) = 0.020Ω escription These P-channel
ADVANCE INFO TF Half -Bridge Driver. Features. Description. Applications. Ordering Information. Typical Application ADVANCE INFO.
Half -Bridge Driver Features Floating high-side driver in bootstrap operation to 600V Drives two N-channel MOSFETs or IGBTs in a half bridge configuration Outputs tolerant to negative transients Programmable
Automotive Grade AUIRS211(0,3)S HIGH- AND LOW-SIDE DRIVER
Dec. 13, 2009 Automotive Grade AUIRS211(0,3)S HIGH- AND LOW-SIDE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +500 V or +600 V Tolerant to negative transient voltage
IPS511/IPS511S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Preliminary Data Sheet No.PD 60155-G IPS511/IPS511S FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Short-circuit protection (current limit ) Active clamp
VCC 5 OUT 4. Orderable Part Number Form Quantity IR44272LPBF SOT23-5 Tape and Reel 3000 IR44272LTRPBF
HVIC TM Features Wide VCC range (5V to 20V) CMOS Schmitt-triggered inputs Under voltage lockout 3.3V logic compatible Enable input Output in phase with inputs Leadfree, RoHS compliant SOT-23 Gate Driver
SMPS MOSFET. V DSS R DS(on) max I D
PD - 93935B SMPS MOSFET IRFR3708 IRFU3708 Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer
Parameter Min. Typ. Max. Units Conditions. µa DS = 200V, V GS = 0V 250 V DS = 160V, V GS = 0V, T J = 150 C
HEXFET Power MOSFET V DSS = 200V R DS(on) = 0.5Ω Description I D = 8A Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 8 I D @ T C = 0 C Continuous Drain
D-Pak I-Pak up to 1.5 watts are possible in typical surface mount
l Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Seventh Generation HEXFET Power MOSFETs from
SMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD-93772A HEXFET Power MOSFET V DSS Rds(on) max I D 400V.0Ω 5.5A Benefits l Low Gate
SELF-OSCILLATING HALF-BRIDGE DRIVER V OFFSET. Packages
Preliminary Data Sheet No. PD60131L SELFOSCILLATING HALFBIDGE DIVE Features Integrated 600V halfbridge gate driver 15.6V zener clamp on Vcc True micropower start up Tighter initial deadtime control Low
IRG4PC40K Short Circuit Rated UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR PD - 9.585B IRG4PC40K Short Circuit Rated UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit
40HF(R) SERIES 40 A STANDARD RECOVERY DIODES. Stud Version. Features. Typical Applications. Major Ratings and Characteristics
HF(R) SERIES STANDARD RECOVERY DIODES Stud Version Features High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version available A Types
Standard Pack Form Quantity
Dual Low Side Driver Features Product Summary Gate drive supply range from 6V to 20V CMOS Schmitt-triggered inputs Matched propagation delay for both channels Outputs in phase with inputs I O+/- 1.5A /
Maximum Power Dissipation W C
PD- 57A INSULATED GATE BIPOLAR TRANSISTOR GA2SA6S Standard Speed IGBT Features C Standard : Optimized for minimum saturation voltage and low operating frequencies up to khz Lowest conduction losses available
SMPS MOSFET. V DSS R DS (on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching SMPS MOSFET PD 987A IRFS9N60A HEXFET Power MOSFET V DSS R DS (on) max I D 600V 0.75Ω 9.2A Benefits
Automotive Grade AUIRS212(71,81) June 12 th, Over Current Protected Single Channel Driver. Product Summary
June 12 th, 2012 Automotive Grade AUIRS212(7,71,8,81)S Over Current Protected Single Channel Driver Features Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative
C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
PD -91656C INSULATED GATE BIPOLAR TRANSISTOR IRG4PC40W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve
IRFZ48R. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.018Ω I D = 50*A. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio
IRFDC20. HEXFET Power MOSFET PD V DSS = 600V. R DS(on) = 4.4Ω I D = 0.32A
HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements PD -9.1228 IRFDC20 V DSS = 600V R
IR20153S & (PbF) HIGH SIDE DRIVER WITH RECHARGE
Preliminary Data Sheet PD60214 Rev B Features Floating channel designed for bootstrap operation Fully operational up to 150V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range
100V VCC VB 6 IRS10752 HO 5 VS 4. To Load. IRS10752LPBF SOT-23-6L Tape and Reel 3000 IRS10752LTRPBF
HVIC TM Features SOT-23 High-Side Gate Driver IC Description Floating gate driver designed for bootstrap operation Fully operational to +100 V Excellent dv/dt immunity Excellent negative V S transient
IRG4PH30K PD A. Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. n-channel. Features V CES = 1200V. V CE(on) typ. = 3.
PD -9580A IRG4PH30K INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, t sc =µs, V CC = 720V, T J = 25 C, Combines low conduction losses with high switching
A I DM Pulsed Drain Current 10 P C = 25 C Power Dissipation 2.0
l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs
Automotive Grade AUIRS2112S HIGH- AND LOW-SIDE DRIVER
August 29 th, 211 Automotive Grade AUIRS2112S HIGH- AND LOW-SIDE DRIVER Features Drives IGBT/MOSFET power devices Floating channel designed for bootstrap operation Fully operational to +6 V Tolerant to
IX2113BTR. 600V High and Low Side Gate Driver INTEGRATED CIRCUITS DIVISION. Description. Driver Characteristics. Features. Ordering Information
V High and Low Side Gate Driver Driver Characteristics Parameter Rating Units V OFFSET V I O +/- (Source/Sink) / A V OUT - V t on /t off / ns Delay Matching (Max) ns Features Floating Channel for Bootstrap
IRG4BH20K-S PD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features V CES = 1200V. V CE(on) typ. = 3.17V.
INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, t sc =µs @ V CC = 720V, T J = 25 C, Combines low conduction losses with high switching speed Latest generation
IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. UltraFast Co-Pack IGBT V CES = 600V. Features. V CE(on) typ. = 2.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating up to 80 khz in hard switching, > 200 khz in resonant mode Generation 4 IGBT design
IRS21867S HIGH AND LOW SIDE DRIVER
31 May, 2011 IRS21867S HIGH AND LOW SIDE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dv/dt immune Low VCC operation
Linear Derating Factor W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
Utra Low On-Resistance Dua P-Channe MOSFET Very Sma SOIC Package Low Profie (
IRG4PC50KD PD B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. Short Circuit Rated UltraFast IGBT.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5. khz, and Short Circuit Rated to µs @25 C, V GE
IRL3102S. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013W I D = 61A PRELIMINARY
l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically
IRS2136/IRS21362/IRS21363/IRS21365/ IRS21366/IRS21367/IRS21368 (J&S) PbF 3-PHASE BRIDGE DRIVER
Data Sheet No. PD6272 IRS2136/IRS21362/IRS21363/IRS21365/ IRS21366/IRS21367/IRS21368 (J&S) PbF 3-PHASE BRIDGE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +6 V
IRS211(7,71,8)(S) SINGLE CHANNEL DRIVER
February 18, 29 SINGLE CHANNEL DRIVER IC Features Floating channel designed for bootstrap operation Fully operational to +6V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range
SMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94114 IRFB42N20D IRFS42N20D IRFSL42N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.055Ω 42.6A Benefits l Low Gate-to-Drain Charge
Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs