RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Product Summary. Description

Transcription

1 Features RADIATION HARDENED HIGH AND W SIDE GATE DRIER Product Summary n Total dose capability to 100 krads(si) n Floating channel designed for bootstrap operation n Fully operational to +400 n Tolerant to negative transient voltage n d/dt immune n Gate drive supply range from 10 to 20 n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20 Logic and power ground ±5 offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown logic n Matched propagation delay for both channels n Outputs in phase with inputs n Hermetically Sealed n Lightweight n E Rating: Class 1C per MIL-STD-883, Method 3015 OFFSET IO+/- OUT ton/off (typ.) Delay Matching(typ.) Description 400 max. 2A / 2A & 100 ns 5 ns Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol Parameter Min. Max. Units B High Side Floating Supply oltage -0.5 S + 20 S High Side Floating Supply Offset oltage 400 High Side Floating Output oltage S B CC Low Side Fixed Supply oltage Low Side Output oltage -0.5 CC DD Logic Supply oltage -0.5 SS + 20 SS Logic Supply Offset oltage CC - 20 CC IN Logic Input oltage (, & ) SS DD PD-94703D RIC7113A4 The RIC7113A4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts. d s /dt Allowable Offset Supply oltage Transient (Figure 2) 50 /ns P D Package Power T LEAD +25 C 0.8 W R thjc Thermal Resistance, Junction to Case 12 (Typ) 15.9 R thj-lead Thermal Resistance, Junction to Lead * 150 (Typ) C/W R thj-lid Thermal Resistance, Junction to Lid * 27 (Typ) T J Junction Temperature T S Storage Temperature C T L Lead Temperature (Soldering, 10 seconds) 300 Weight 0.6(typical) g * Guaranteed by design, not tested /27/15

2 Pre-Irradiation Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. The S and SS offset ratings are tested with all supplies biased at 15 differential. Symbol Parameter Min. Max. Units B High Side Floating Supply Absolute oltage S + 10 S + 20 S High Side Floating Supply Offset oltage High Side Floating Output oltage S B CC Low Side Fixed Supply oltage Low Side Output oltage 0 CC DD Logic Supply oltage SS + 5 SS + 20 SS Logic Supply Offset oltage -5 5 IN Logic Input oltage (, & ) SS DD Dynamic Electrical Characteristics BIAS (CC, BS, DD) = 15, and SS = COM unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3. Tj = 25 C Tj = -55 to 125 C Symbol Parameter Min. Typ. Max. Min. Max. Units Test Conditions t on Turn-On Propagation Delay S = 0 t off Turn-Off Propagation Delay S = 400 ns t sd Shutdown Propagation Delay S = 400 t r Turn-On Rise Time CL = 1000pf t f Turn-Off Fall Time CL = 1000pf MT Delay Matching, HS & LS Turn-On/Off 5 20 Hton-Lton or Htoff-Ltoff Typical Connection up to DD DD B S TO AD CC SS SS COM CC 2

3 Pre-Irradiation RIC7113A4 Static Electrical Characteristics BIAS (CC, BS, DD) = 15, unless otherwise specified. The IN, TH and IIN parameters are referenced to SS and are applicable to all three logic input pins:, and. The O and IO parameters are referenced to COM or S and are applicable to the respective output pins: or. Tj = 25 C Tj = -55 to 125 C Symbol Parameter Min. Max. Min. Max. Units Test Conditions IH Logic 1 Input oltage DD = DD = DD = DD = 20 IL Logic 0 Input oltage DD = DD = DD = DD = 20 OH High Level Output oltage, BIAS - O IN = IH, I O = 0A OL Low Level Output oltage, O IN = IH, I O = 0A I LK Offset Supply Leakage Current B = S = 400 I QBS Quiescent BS Supply Current µa IN =0 or DD I QCC Quiescent CC Supply Current IN =0, or DD I QDD Quiescent DD Supply Current IN =0, or DD I IN+ Logic 1 Input Bias Current IN = DD I IN- Logic 0 Input Bias Current IN = 0 BSU+ BS Supply Undervoltage Positive BSU- BS Supply Undervoltage Negative CCU+ CC Supply Undervoltage Positive CCU- CC Supply Undervoltage Negative I O+ Output High Short Circuit Pulsed 2.0 O = 0, IN = DD Current * A PW < 10 µs I O- Output Low Short Circuit Pulsed 2.0 O = 15, IN = 0 Current * PW < 10 µs * Guaranteed by design, not tested 3

4 Radiation characteristics Radiation Performance International Rectifier Radiation Hardened gate drivers are tested to verify their hardness capability. The hardness assurance program at International rectifier uses a Cobalt-60 ( 60 Co) source and heavy ion irradiation. Every wafer shall be tested per MIL-STD-883, Method 1019, test condition A Ionizing Radiation (Total Dose) Test Procedure. Both pre- and post- irradiation performances are tested and specified using the same drive circuitry and test conditions to provide a direct comparison. For Static Irradiation Test Conditions refer to figure 7. Static Electrical Characteristics Tj = 25 C Symbol Parameter 100K Rads (Si) Units Test Conditions Min Max IH Logic 1 Input oltage 3.1 DD = DD = DD = DD = 20 IL Logic 0 Input oltage 1.6 DD = DD = DD = DD = 20 OH High Level Output oltage, BIAS - O 1.2 IN = IH, I O = 0A OL Low Level Output oltage, O 0.1 IN = IH, I O = 0A I LK Offset Supply Leakage Current 50 B =S = 400 I QBS Quiescent BS Supply Current 230 IN =0 or DD I QCC Quiescent CC Supply Current 340 µa IN =0 or DD I QDD Quiescent DD Supply Current 30 IN =0 or DD I IN+ Logic 1 Input Bias Current 40 IN =DD I IN- Logic 0 Input Bias Current 1.0 IN =0 BSU+ BS Supply Undervoltage Positive BSU- BS Supply Undervoltage Negative CCU+ CC Supply Undervoltage Positive CCU- CC Supply Undervoltage Negative I O+ Output High Short Circuit Pulsed 2.0 O =0, IN =DD Current * PW < 10 µs A I O- Output Low Short Circuit Pulsed 2.0 O =15, IN =0 Current * PW < 10 µs * Guaranteed by design, not tested 4

5 Radiation characteristics RIC7113A4 International Rectifier radiation hardened Gate Drivers have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization data is illustrated below. For Static Bias Test Conditions refer to figure 8. Single Event Effect Safe Operating Area Ion LET Energy Angle S () Me/(mg/cm 2 )) (Me) BS = BS = BS = 17.5 Br I Au I Au Note: CC/DD = 20, except for LET=100, then CC/DD = 17.5 STATIC BIAS S () B () Br, 0 angle I, 0 angle Au, 0 angle I, 45 angle Au, 35 angle Single Event Effect, Safe Operating Area 5

6 H = 10 to 400 RIC7113 IRF820A Figure 1. Input/Output Logic Timing Diagram Figure 2. Floating Supply oltage Transient Test Circuit (0 to 400) 50% 50% RIC7113 t on t r t off t f 90% 90% 10% 10% Figure 3. Switching Time Test Circuit Figure 4. Switching Time Waveform Definition 50% 50% 50% t sd 90% MT 10% 90% MT Figure 5. Shutdown Waveform Definitions Figure 6. Delay Matching Waveform Definitions 6

7 4K DD RIC7113 B 4K 1 nf Logic S CC 2.4K 50 1 nf 400 SS COM 4K Figure 7. Static Bias Conditions for Total Ionizing DoseTest RIC7113L4 SCHEMATIC 2 Figure 8. Static Bias Conditions for Single Event Effect Test 7

8 Functional Block Diagram DD R S Q DD / CC LEEL SHIFT PULSE GEN H LEEL SHIFT U DETECT PULSE FILTER R Q R S B S CC U DETECT DD / CC LEE L SHIFT R S Q DELAY SS COM Lead Definitions Symbol DD SS B S CC COM Description Logic supply Logic input for high side gate driver output (), in phase Logic input for shutdown Logic input for low side gate driver output (), in phase Logic ground High side floating supply High side gate drive output High side floating supply return Low side supply Low side gate drive output Low side return 8

9 Case Outline and Dimensions 14 Lead FlatPack IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) TAC Fax: (310) isit us at for sales contact information. Data and specifications subject to change without notice. 10/