High and Low Side Driver
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1 High and Low Side Driver Features Product Summary Floating channel designed for bootstrap operation Fully operational to V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from 12 V to 20 V Undervoltage lockout for both channels 3.3 V logic compatible Separate logic supply range from 3.3 V to 20 V Logic and power ground ±5 V offset CMOS Schmitt-triggered inputs with pull-down Cycle by cycle edge-triggered shutdown logic Matched propagation delay for both channels Outputs in phase with inputs V OFFSET (max) I O+/- V OUT t on/off (typical) Delay Matching 1200 V 1.7 A / 2 A 12 V 20 V 280 ns / 225 ns 30 ns Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 1200 V. Package Options 16 Lead SOIC 14 Lead PDIP (Wide Body) Ordering Information Base Part Number Package Type Standard Pack Form Quantity Orderable Part Number IR2213SPBF SO16WB Tube 45 IR2213SPBF IR2213SPBF SO16WB Tape and Reel 1000 IR2213STRPBF IR2213PBF PDIP14 Tube 25 IR2213PBF International Rectifier February 4, 2014
2 Typical Connection Diagram Refer to Lead Assignments for correct pin configuration. This/These diagram(s) show electrical connections only. Please refer to our Application Notes and Design Tips for proper circuit board layout International Rectifier February 4, 2014
3 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. Units V B High Side Floating Supply Voltage V S High Side Floating Supply Offset Voltage V B - 25 V B V HO High Side Floating Output Voltage V S V B V CC Low Side Fixed Supply Voltage V LO Low Side Output Voltage -0.3 V CC V V DD Logic Supply Voltage -0.3 V SS + 25 V SS Logic Supply Offset Voltage V CC - 25 V CC V IN Logic Input Voltage (HIN, LIN & SD) V SS V DD dvs/dt Allowable Offset Supply Voltage Transient (Figure 2) 50 V/ns Package Power Dissipation (14 Lead PIDP) 1.6 P T A +25 C W (16 Lead SOIC) Thermal T +25 C Resistance, Junction to (14 Lead PDIP) 75 R THJA C/W Ambient (16 Lead SOIC) 100 T J Junction Temperature 125 T S Storage Temperature C T L Lead Temperature (Soldering, 10 seconds) 300 Recommended Operating Conditions The Input / Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The V S and V SS offset ratings are tested with all supplies biased at 15 V differential. Symbol Definition Min. Max. Units V B High Side Floating Supply Absolute Voltage V S + 12 V S + 20 High Side Floating Supply Offset Voltage 1200 V S V HO High Side Floating Output Voltage V S V B V CC Low Side Fixed Supply Voltage V LO Low Side Output Voltage 0 V CC V DD Logic Supply Voltage V SS + 3 V SS + 20 V SS Logic Supply Offset Voltage -5 5 V IN Logic Input Voltage (HIN, LIN & SD) V SS V DD V Logic operational for V S of -5 to +1200V. Logic state held for V S of -5V to -V BS. (Please refer to the Design Tip DT97-3 for more details). When V DD<5V, the minimum V SS offset is limited to -V DD International Rectifier February 4, 2014
4 Dynamic Electrical Characteristics V BIAS (V CC, V BS, V DD ) = 15 V, C L = 1000 pf, T A = 25 C and V SS = COM unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3. Symbol Definition Min. Typ. Max. Units Test Conditions t on Turn-On Propagation Delay 280 V S = 0V t off Turn-Off Propagation Delay 225 V S = 1200V t sd Shutdown Propagation Delay 230 V S = 1200V t r Turn-On Rise Time 25 ns t f Turn-Off Fall Time 17 MT Delay Matching, HS & LS Turn- On/Off 30 Static Electrical Characteristics V BIAS (V CC, V BS, V DD ) = 15 V, T A = 25 C and V SS = COM unless otherwise specified. The V IN, V TH and I IN parameters are referenced to V SS and are applicable to all three logic input leads: HIN, LIN and SD. The V O and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Symbol Definition Min. Typ. Max. Units Test Conditions V IH Logic 1 Input Voltage 9.5 V IL Logic 0 Input Voltage 6.0 V OH High Level Output Voltage, V BIAS - V O 1.2 V I O = 0A V OL Low Level Output Voltage, V O 0.1 I O = 0A I LK Offset Supply Leakage Current 50 V B = V S = 1200V I QBS Quiescent V BS Supply Current V IN = 0V or V DD I QCC Quiescent V CC Supply Current V µa IN = 0V or V DD I QDD Quiescent V DD Supply Current V IN = 0V or V DD I IN+ Logic 1 Input Bias Current V IN = V DD I IN- Logic 0 Input Bias Current 1.0 V IN = 0V V BS Supply Undervoltage Positive Going Threshold V BS Supply Undervoltage Negative Going Threshold V V CC Supply Undervoltage Positive Going Threshold V CC Supply Undervoltage Negative Going Threshold V BSUV+ V BSUV- V CCUV+ V CCUV- I O+ I O- Output High Short Circuit Pulsed Current Output Low Short Circuit Pulsed Current A V O = 0V, V IN = V DD PW 10 µs V O = 15V, V IN = 0V PW 10 µs International Rectifier February 4, 2014
5 Functional Block Diagram International Rectifier February 4, 2014
6 Lead Definitions Symbol Description V DD HIN SD LIN V SS V B HO V S V CC LO COM Logic Supply Logic Input for High Side Gate Driver Output (HO), In Phase Logic Input for Shutdown Logic Input for Low Side Gate Driver Output (LO), In Phase Logic Ground High Side Floating Supply High Side Gate Drive Output High Side Floating Supply Return Low Side Supply Low Side Gate Drive Output Low Side Return Lead Assignments 8 HO 7 9 HO 8 9 V DD V B 6 10 V B 7 10 HIN V S 5 V DD 11 V S 6 11 SD 4 12 HIN 5 12 LIN V CC 3 13 SD 4 13 V SS COM 2 14 LIN V CC 3 14 LO 1 15 V SS COM 2 16 LO 1 14-Lead PDIP 16-Lead SOIC (Wide Body) International Rectifier February 4, 2014
7 Application Information and Additional Information V CC = 15V HV = 10 to 1200V 10µF 0.1µF 10KF6 0.1µF 200µH 10KF µF V DD V CC V B HIN V S SD LIN V SS COM HO LO OUTPUT MONITOR HO 10KF6 IRF820 dv S dt <50 V/ns Figure 1. Input / Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit V CC = 15V 10µF 0.1µF V DD HIN HIN SD SD LIN LIN V CC V B V S HO LO 0.1µF C L C L HO LO 10µF 10µF + V B 15V - V S (0 to 1200V) V SS COM Figure 3. Switching Time Test Circuit Figure 4. Switching Time Waveform Definition Figure 5. Shutdown Waveform Definitions Figure 6. Delay Matching Waveform Definitions International Rectifier February 4, 2014
8 Figure 7A. Turn-On Rise Time vs. Temperature Figure 7B. Turn-On Rise Time vs. Voltage Figure 8A. Turn-Off Fall Time vs. Temperature Figure 8B. Turn-Off Fall Time vs. Voltage Figure 9A. Logic 1 Input Threshold vs. Temperature Figure 9B. Logic 1 Input Threshold vs. Voltage International Rectifier February 4, 2014
9 Figure 10A. Logic 0 Input Threshold vs. Temperature Figure 10B. Logic 0 Input Threshold vs. Voltage Figure 11A. High Level Output vs. Temperature Figure 11B. High Level Outputs vs. Voltage Figure 12A. Low Level Output vs. Temperature Figure 12B. Low Level Output vs. Voltage International Rectifier February 4, 2014
10 Figure 13A. Offset Supply Current vs. Temperature Figure 13B. Offset Supply Current vs. Voltage Figure 14A. V BS Supply Current vs. Temperature Figure 14B. V BS Supply Current vs. Voltage Figure 15A. V CC Supply Current vs. Temperature Figure 15B. V CC Supply Current vs. Voltage International Rectifier February 4, 2014
11 Figure 16A. V DD Supply Current vs. Temperature Figure 16B. V DD Supply Current vs. V DD Voltage Figure 17A. Logic 1 Input Current vs. Temperature Figure 17B. Logic 1 Input Current vs. V DD Voltage Figure 18A. Logic 0 Input Current vs. Temperature Figure 18B. Logic 0 Input Current vs. V DD Voltage International Rectifier February 4, 2014
12 Figure 19. Maximum V S Negative Offset vs. V BS Supply Voltage Figure 20. Maximum V SS Positive Offset vs. V CC Supply Voltage Figure 21. IR2213S vs. Frequency (IRFBC20) R gate=33ω, V CC=15V Figure 22. IR2213S vs. Frequency (IRFBC30) R gate=22ω, V CC=15V International Rectifier February 4, 2014
13 Figure 23. IR2213S vs. Frequency (IRFBC40) R gate=15ω, V CC=15V Figure 24. IR2213S vs. Frequency (IRFBC50) R gate=10ω, V CC=15V Figure 25. IR2213 vs. Frequency (IRFBC20) R gate=33ω, V CC=15V Figure 26. IR2213 vs. Frequency (IRFBC30) R gate=22ω, V CC=15V International Rectifier February 4, 2014
14 Figure 27. IR2213 vs. Frequency (IRFBC40) R gate=15ω, V CC=15V Figure 28. IR2213 vs. Frequency (IRFBC50) R gate=10ω, V CC=15V International Rectifier February 4, 2014
15 Package Details 16-Lead SOIC (wide body) International Rectifier February 4, 2014
16 Tape and Reel Details, SO16WB International Rectifier February 4, 2014
17 Part Marking Information Part number IR2213 Date code YWW? IR logo Pin 1 Identifier? P MARKING CODE Lead Free Released Non-Lead Free Released? XXXX Lot Code (Prod mode 4 digit SPN code) Assembly site code Per SCOP Lead PDIP Part number IR2213S Date code YWW? IR logo Pin 1 Identifier? P MARKING CODE Lead Free Released Non-Lead Free Released? XXXX Lot Code (Prod mode 4 digit SPN code) Assembly site code Per SCOP Lead SOIC (wide body) International Rectifier February 4, 2014
18 Qualification Information Qualification Level Moisture Sensitivity Level RoHS Compliant Industrial (per JEDEC JESD 47) Comments: This family of ICs has passed JEDEC s Industrial qualification. IR s Consumer qualification level is granted by extension of the higher Industrial level. MSL3 SOIC16WB (per IPC/JEDEC J-STD 020) Not applicable PDIP14 (non-surface mount package style) Yes Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information. Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information. The information provided in this document is believed to be accurate and reliable. However, International Rectifier assumes no responsibility for the consequences of the use of this information. International Rectifier assumes no responsibility for any infringement of patents or of other rights of third parties which may result from the use of this information. No license is granted by implication or otherwise under any patent or patent rights of International Rectifier. The specifications mentioned in this document are subject to change without notice. This document supersedes and replaces all information previously supplied. For technical support, please contact IR s Technical Assistance Center WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California Tel: (310) International Rectifier February 4, 2014
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Half -Bridge Driver Features Floating high-side driver in bootstrap operation to 600V Drives two N-channel MOSFETs or IGBTs in a half bridge configuration Outputs tolerant to negative transients Programmable
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FAN7391 High-Current, High & Low-Side, Gate-Drive IC Features Floating Channels for Bootstrap Operation to +6 V Typically 4.5 A / 4.5 A Sourcing / Sinking Current Driving Capability Common-Mode dv/dt Noise-Canceling
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Features Floating channel designed for bootstrap operation. Fully operational to +6 V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range from 1 V to 2 V (IRS2136D/ IRS21368D),11.5
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Features Output Power MOSFETs in half-bridge configuration High side gate drive designed for bootstrap operation Bootstrap diode integrated into package (HD type) Accurate timing control for both Power
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