V OFFSET V OUT. Package V B V S
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- Buck Peter Ross
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1 Features Gate drive supply range from V to V Undervoltage lockout for V BS and V CC. V and V input logic compatible Tolerant to negative transient voltage Matched propagation delays for all channels RoHS compliant Description The IRS8 is a high voltage, high speed power MOSFET and IGBT single high-side driver with propagation delay matched output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The floating logic input is compatible with standard CMOS or LSTTL output, down to. V logic and can be operated up to V above the ground. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration, which operates up to V. ical Connection Data Sheet PD No. reva Not recommended for new design: please use IRS8 SINGLE HIGH SIDE DRIVER IC Product Summary Package V OFFSET I O +/- V OUT t on/off (typ.) IRS8SPbF V max. A / A V - V ns & ns 8-Lead SOIC IRS8 up to V V CC IN V CC IN V B HO COM V S TO LOAD (Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
2 Absolute imum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min.. Units V CC Low-side supply voltage -. (Note ) V IN Logic input voltage (HIN) COM -. V CC +. V B High-side floating well supply voltage -. (Note ) V S High-side floating well supply return voltage V B - V B +. V HO Floating gate drive output voltage V S -. V B +. dv s /dt Allowable V S offset supply transient relative to COM V/ns P D Package power T A + C. W Rth JA Thermal resistance, junction to ambient C/W T J Junction temperature - T S Storage temperature - T L Lead temperature (soldering, seconds) Note : All supplies are fully tested at V. An internal V clamp exists for each supply. V C Recommended Operating Conditions For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to COM. The offset rating are tested with supplies of (V CC -COM)=(V B -V S )= V. Symbol Definition Min.. Units V CC Low-side supply voltage V IN HIN input voltage COM V CC V B High-side floating well supply voltage V S + V S + V S High-side floating well supply offset voltage Note V V HO Floating gate drive output voltage V S V B T A Ambient temperature - C Note : Logic operational for V S of - V to V. Logic state held for V S of - V to -V BS. (Please refer to the Design Tip DT97- for more details).
3 Dynamic Electrical Characteristics (V CC -COM)=(V B -V S )= V, T A = o C. C L = pf unless otherwise specified. All parameters are referenced to COM. Symbol Definition Min... Units Test Conditions t on Turn-on propagation delay (V S -COM) = V t off Turn-off propagation delay (V S -COM) = V ns t r Turn-on rise time t f Turn-off fall time Static Electrical Characteristics (V CC -COM)=(V B -V S )= V. The V IN, V TH, and I IN parameters are referenced to COM. The V O and I O parameters are referenced respective V S and are applicale to the respective output leads HO. The V CC parameters are referenced to COM. The V BSUV parameters are referenced to V S. Symbol Definition Min... Units Test Conditions V CCUV+ V CC supply undervoltage positive going threshold V CCUV- V CC supply undervoltage negative going threshold V BSUV+ V BS supply undervoltage positive going threshold V BSUV- V BS supply undervoltage negative going threshold I LK High-side floating well offset supply leakage current V B = V S = V I QBS Quiescent V BS supply current 8 I QCC Quiescent V CC supply current V IH Logic input voltage. V IL Logic input voltage.8 V OH, HO HO high level output voltage, V BIAS - V O V OL, HO HO low level output voltage, V O I IN+ Logic input bias current V HIN = V µa I IN- Logic input bias current V HIN = V I O+, HO Output high short circuit pulsed current HO I O-, HO Output low short circuit pulsed current HO V µa V mv A HIN = V or V I O = ma V O = V, V IN = V PW µs V O = V, V IN = V PW µs
4 Functional Block Diagram VCC COM V VREG VCCUV DETECT HIGHSIDE CHANNLE VB HIN PULSE GEN LEVEL SHIFT UP FILTER, LATCH UV DETECT DRIVER HO VS Lead Definitions Symbol V CC COM V B HO V S HIN Description Low-side supply voltage Ground High-side drive floating supply High-side driver outputs High voltage floating supply return Logic inputs for high-side gate driver output (in phase) Lead Assignments VCC VB 8 HIN IRS8S HO 7 VS COM 8-Lead SOIC
5 IRS8PbF IN % % t on t r t off tf OUT % 9% 9% % Figure. Switching Time Waveforms HIN HO Figure. Input/Output Timing Diagram
6 T u r n - O n P r o p a g a t i o n D e l a y ( n s ) Figure A. Turn-On Propagation Delay vs. T u r n - O n P r o p a g a t i o n D e l a y ( n s ) 8 Figure B. Turn-On Propagation Delay vs. Supply Voltage Turn- Off Propagation Delay (ns) Figure A. Turn-Off Propagation Delay vs. T u r n - O f f P r o p a g a t i o n D e l a y ( n s ) 8 Figure B. Turn-Off Propagation Delay vs. Supply Voltage
7 T u r n - O n R i s e T i m e ( n s ) T u r n - O n R i s e T i m e ( n s ) Figure A. Turn-On Rise Time vs. Figure B. Turn-On Rise Time vs. Supply Voltage Turn- Off Fall Time ( ns) Figure A. Turn-Off Fall Time vs. Turn- Off Fall Time ( ns) 8 Figure B. Turn-Off Fall Time vs. Supply Voltage 7
8 Logic "" Input Voltag e (V)... Logic "" Input Voltage (V) Figure 7A. Logic "" Input Voltage vs. 8 Figure 7B. Logic "" Input Voltage vs. Supply Voltage.9.9 Logic "" Input Voltage (V) Min Logic "" Input Voltage (V) Min Figure 8A. Logic "" Input Voltage vs. Figure 8B. Logic "" Input Voltage vs. Supply Voltage 8
9 High Level Output (mv) Figure 9A. High Level Output vs. (Io = ma) H i g h L e v e l O u t p u t ( m V ) 7 8 Figure 9B. High Level Output vs. Supply Voltage (Io = ma) Low L evel Output (m V) Low Level Output (mv) Figure A. Low Level Output vs. (Io= ma) 8 Figure B. Low Level Output vs. Supply Voltage (Io= ma) 9
10 Offset Supply Leakage Current (µa) O f f s e t S u p p l y L e a k a g e C u r r e n t ( µ A ) 8 Figure A. Offset Supply Leakage Current vs. Figure B. Offset Supply Leakage Current vs. Supply Voltage 8 V B S Supp ly Current (µa) 8 V BS Supply Current (µa) Figure A. V BS Supply Current vs. Figure B. V BS Supply Current vs. Supply Voltage
11 V CC Supp ly Current (µa ) V CC Supply Current (µa ) Figure A. V CC Supply Current vs. Figure B. V CC Supply Current vs. Supply Voltage Logic "" Input Bias C urrent (µa) L o g i c " " I n p u t B i a s C u r r e n t ( µ A ) 8 Figure A. Logic "" Input Bias Current vs. Figure B. Logic "" Input Bias Current vs. Supply Voltage
12 Logic "" Input Bias Current (µa) Figure A. Logic "" Input Bias Current vs. Logic "" Input Bias Current (µa) 8 Figure B. Logic "" Input Bias Current vs. Voltage V CC UVL O Threshold (+) (V) Min V CC UVLO Threshold (-) (V) Min Figure. V CC Undervoltage Threshold (+) vs. Figure 7. V CC Undervoltage Threshold (-) vs.
13 V B S UVL O Threshold (+) (V) 9 8 Min V B S UVLO Threshold (-) (V) Min Figure 8. V BS Undervoltage Threshold (+) vs. Figure 9. V BS Undervoltage Threshold (-) vs. Outp ut Source Current (A) Figure A. Output Source Current vs. O u t p u t S o u r c e C u r r e n t ( A ) 8 Figure B. Output Source Current vs. Supply Voltage
14 Output Sink Current (A) Figure A. Output Sink Current vs. O utp ut Sink Cur r ent ( A) 8 Figure B. Output Sink Current vs. Supply Voltage Case outline A E X D 8 7 e B H. [.] A. [.] X.7 [.] FOOTPRINT 8X.7 [.8] 8X.78 [.7] DIM INCHES MILLIMETERS MIN MAX MIN MAX A A b.... c D E e. BASIC.7 BASIC e. BASIC. BASIC H K L y e A C y K x 8X b. [.] C A B NOTES: A. DIMENSIONING & TOLERANCING PER ASME Y.M-99.. CONTROLLING DIMENSION: MILLIMETER. [.]. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].. OUTLINE CONFORMS TO JEDEC OUTLINE MS-AA. 8-Lead SOIC 8X L 7 8X c. OUTLINE CONFORMS TO JEDEC OUTLINE MS-AA. DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED. [.]. DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED. [.]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. -7
15 Tape & Reel 8-lead SOIC LOADED TAPE FEED DIRECTION B A H D F C NOTE : CONTROLLING DIMENSION IN MM E G CARRIER TAPE DIM ENSION FOR 8SOICN Metric Im perial Code Min Min A B.9... C D....8 E...8. F....8 G. n/a.9 n/a H...9. F D E C B A G H REEL DIM ENSIONS FOR 8SOIC N Metric Im perial Code Min Min A B C D E F n/a 8. n/a.7 G H
16 LEADFREE PART MARKING INFORMATION Part number Date code IRxxxxxx S YWW? IR logo Pin Identifier? MARKING CODE P Lead Free Released Non-Lead Free Released?XXXX Lot Code (Prod mode - digit SPN code) Assembly site code Per SCOP - ORDER INFORMATION 8-Lead SOIC order IRS8SPbF 8-Lead SOIC Tape & Reel IRS8STRPbF Rev. Date Page # Description of Change A //8 Not Recommended for new design: Please use IRS8D ton/toff values should read ns not 7ns The SOIC-8 is MSL qualified. This product has been designed and qualified for the industrial level. Qualification standards can be found at IR WORLD HEADQUARTERS: Kansas St., El Segundo, California 9 Tel: () -7 Data and specifications subject to change without notice. //8
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Data Sheet No. PD60259 ADVANCE INFOMATION IS2453D(S)PbF SELF-OSCILLATING FULL-BIDGE DIVE IC Features Integrated 600V Full-Bridge Gate Driver CT, T programmable oscillator 15.6V Zener Clamp on Micropower
More informationFeatures. Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel DGD2103MS8-13 DGD2103M ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description The is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2304S8-13 DGD ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description Features The is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing
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FAN1 High-Current High-Side Gate Drive IC Features! Floating Channel for Bootstrap Operation to +V! A/A Sourcing/Sinking Current Driving Capability! Common-Mode dv/dt Noise Canceling Circuit!.V and V Input
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Features Floating channel designed for bootstrap operation. Fully operational to +6 V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range from 1 V to 2 V (IRS2136D/ IRS21368D),11.5
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FAN7191-F85 High-Current, High and Low Side Gate Drive IC Features! Floating Channel for Bootstrap Operation to +6V! 4.5A Sourcing and 4.5A Sinking Current Driving Capability! Common-Mode dv/dt Noise Cancelling
More informationTF2103. Half-Bridge Gate Driver. Description. Features. Applications. Ordering Information. Typical Application. Advance Info.
Features Floating high-side driver in bootstrap operation to 600V Drives two N-channel MOSFETs or IGBTs in a half bridge configuration 290mA source/600ma sink output current capability Outputs tolerant
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Half -Bridge Driver Features Floating high-side driver in bootstrap operation to 600V Drives two N-channel MOSFETs or IGBTs in a half bridge configuration Outputs tolerant to negative transients Programmable
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FAN73932 Half-Bridge Gate Drive IC Features Floating Channel for Bootstrap Operation to +600V Typically 2.5A/2.5A Sourcing/Sinking Current Driving Capability Extended Allowable Negative V S Swing to -9.8V
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HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The is a mid-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques
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Features Floating channel designed for bootstrap operation Fully operational to 600V Tolerant to negative transient voltage dv/dt immune Undervoltage lockout Programmable oscillator frequency 1 f = 1.4
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Features Floating channel designed for bootstrap operation Fully operational to +600 Tolerant to negative transient voltage d/dt immune Undervoltage lockout Programmable oscillator frequency 1 f = 1.4
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HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage
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HALF- BRIDGE GATE DRIVER IN SO-14 Description The is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques
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Application Note AN- IRS and IR Comparison By Jason Nguyen, Min Fang, David New Table of Contents Page Introduction... Block Diagrams... Electrical Characteristic Differences... Figures... Summary...9
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查询 IR2086S 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 Data Sheet PD No.60226 IR2086S HIGH SPEED, 100V, SELF OSCILLATING 50% DUTY CYCLE, FULL-BRIDGE DRIVER Features Simple primary side control solution to enable full-bridge
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IX High and Low Side Gate Driver Driver Characteristics Parameter Rating Units OFFSET I O +/- (Source/Sink) / A OUT - t on /t off / ns Features Floating Channel for Bootstrap Operation to + Outputs Capable
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Not recommended for new design Data Sheet No. PD60293 IRS254(0,1)(S)PbF LED BUCK REGULATOR CONTROL IC Description The IRS254(0,1) are high voltage, high frequency buck control ICs for constant LED current
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HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME IN W-DFN3030-10 (Type TH) Description The is a high-frequency half-bridge gate driver capable of driving N-channel MOSFETs in a half-bridge
More informationTypical Application Circuit V CC HIN,, LIN,, FAULT EN GND Pin Description V CC HIN,, LIN,, FAULT EN RCIN ITRIP V SS PIN NO. PIN NAME PIN FUNCTION V B,
SOIC8 -Phase Bridge Driver General Description The is a high voltage, high speed power MOSFET and IGBT drivers with a three independent high and low side referenced output channels for -phase applications.
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