IRS2183/IRS21834(S)PbF

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1 Data Sheet No. PD Features Floating channel designed for bootstrap operation Fully operational to + V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range from V to V Undervoltage lockout for both channels. V and V input logic compatible Matched propagation delay for both channels Logic and power ground +/- V offset Lower di/dt gate driver for better noise immunity Output source/sink current capability. A/.8 A RoHS compliant Description The IRS8/IRS8 are high voltage, high speed power MOSFET and IGBT drivers with dependent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to. V logic. The output drivers feature a high pulse current buffer stage designed for minimum Typical Connection Feature Comparison Part Input logic up to V IRS8/IRS8(S)PbF Packages HALF-BRIDGE DRIVER 8-Lead SOIC IRS8S Crossconduction prevention logic 8-Lead PDIP IRS8 Deadtime (ns) Ground Pins 8 COM HIN/LIN no none 8 VSS/COM 8 Internal COM HIN/LIN yes 8 Program - VSS/COM 8 Internal COM IN/SD yes 8 Program - VSS/COM -Lead PDIP IRS8 -Lead SOIC IRS8S driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to V. ton/toff (ns) 8/ 8/ 8/7 V B HIN HIN HO LIN LIN COM V S LO TO LOAD up to V IRS8 HO IRS8 V B HIN LIN HIN LIN V S TO LOAD (Refer to Lead Assignment for correct pin V SS configuration) These diagrams show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. R DT DT V SS COM LO

2 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Units V B High-side floating absolute voltage -. (Note ) V S High-side floating supply offset voltage V B - V B +. V HO High-side floating output voltage V S -. V B +. Low-side and logic fixed supply voltage -. (Note ) V LO Low-side output voltage DT Programmable deadtime pin voltage (IR8 only) V SS V IN Logic input voltage (HIN & LIN) V SS V SS Logic ground (IR8 only) - +. dv S /dt Allowable offset supply voltage transient V/ns P D Package power T A + C Rth JA Thermal resistance, junction to ambient (8-lead PDIP). (8-lead SOIC). (-lead PDIP). (-lead SOIC). (8-lead PDIP) (8-lead SOIC) (-lead PDIP) 7 (-lead SOIC) T J Junction temperature T S Storage temperature - T L Lead temperature (soldering, seconds) Note : All supplies are fully tested at V and an internal V clamp exists for each supply. Recommended Operating Conditions The input/output logic timing diagram is shown in Fig.. For proper operation the device should be used within the recommended conditions. The V S and V SS offset rating are tested with all supplies biased at V differential. Symbol Definition Units V B High-side floating supply absolute voltage V S + V S + V S High-side floating supply offset voltage Note V W C/W C V HO High-side floating output voltage V S V B Low-side and logic fixed supply voltage V LO Low-side output voltage V V IN Logic input voltage (HIN & LIN) V SS DT Programmable deadtime pin voltage (IR8 only) V SS V SS Logic ground (IR8 only) - T A Ambient temperature - C Note : Logic operational for V S of - V to + V. Logic state held for V S of - V to -V BS. (Please refer to the Design Tip DT97- for more details).

3 Dynamic Electrical Characteristics V BIAS (, V BS ) = V, V SS = COM, C L = pf, T A = C, DT = V SS unless otherwise specified. Symbol Definition Units Test Conditions ton Turn-on propagation delay 8 7 VS = V toff Turn-off propagation delay V S = V or V MT Delay matching ton - toff tr Turn-on rise time tf Turn-off fall time DT Deadtime: LO turn-off to HO turn-on(dtlo-ho) & 8 R DT = Ω HO turn-off to LO turn-on (DTHO-LO) µs R DT = kω (IR8) MDT Deadtime matching = DTLO-HO - DTHO-LO ns R DT = Ω R DT = kω (IR8) ns V S = V Static Electrical Characteristics V BIAS (, V BS ) = V, V SS = COM, DT= V SS and T A = C unless otherwise specified. The V IL, V IH, and I IN parameters are referenced to V SS /COM and are applicable to the respective input leads: HIN and LIN. The V O, I O, and Ron parameters are referenced to COM and are applicable to the respective output leads: HO and LO. Symbol Definition Units Test Conditions V IH Logic input voltage for HIN & logic for LIN. = V to V V IL Logic input voltage for HIN & logic for LIN.8 V V OH High level output voltage, V BIAS - V O. I O = A V OL Low level output voltage, V O. I O = ma I LK Offset supply leakage current V B = V S = V µa I QBS Quiescent V BS supply current V IN = V or V I QCC Quiescent supply current... ma I IN+ Logic input bias current HIN = V, LIN = V I IN- Logic input bias current. µa HIN = V, LIN = V UV+ V BSUV+ UV- V BSUV- and V BS supply undervoltage positive going threshold and V BS supply undervoltage negative going threshold UVH Hysteresis..7 V V BSUVH I O+ Output high short circuit pulsed current..9 I O- Output low short circuit pulsed current.8. A V O = V, PW µs V O = V, PW µs

4 Functional Block Diagrams 8 LIN +V UV DETECT DELAY COM LO VCC HIN DT VSS VS HO VB PULSE FILTER HV LEVEL SHIFTER R R S Q UV DETECT DEADTIME & SHOOT-THROUGH PREVENTION PULSE GENERATOR VSS/COM LEVEL SHIFT VSS/COM LEVEL SHIFT 8 LIN UV DETECT DELAY HIN DT VSS VS HO VB PULSE FILTER HV LEVEL SHIFTER R R S Q UV DETECT DEADTIME & SHOOT-THROUGH PREVENTION PULSE GENERATOR VSS/COM LEVEL SHIFT VSS/COM LEVEL SHIFT +V COM LO VCC

5 Lead Definitions Symbol Description HIN LIN DT V SS V B HO V S LO COM Logic input for high-side gate driver output (HO), in phase (referenced to COM for IRS8 and VSS for IRS8) Logic input for low-side gate driver output (LO), out of phase (referenced to COM for IRS8 and VSS for IRS8) Programmable deadtime lead, referenced to VSS (IRS8 only) Logic ground (IRS8 only) High-side floating supply High-side gate driver output High-side floating supply return Low-side and logic fixed supply Low-side gate driver output Low-side return Lead Assignments HIN V B 8 HIN V B 8 LIN HO 7 LIN HO 7 COM V S COM V S LO LO 8-Lead PDIP 8-Lead SOIC IRS8PbF IRS8SPbF HIN HIN LIN V B LIN V B VSS HO VSS HO DT V S DT V S COM COM LO 9 LO Lead PDIP -Lead SOIC IRS8PbF IRS8SPbF

6 Figure. Input/Output Timing Diagram Figure. Switching Time Waveform Definitions Figure. Deadtime Waveform Definitions

7 Turn-On Propagation Delay (ns) Turn-On Propagation Delay (ns) 8 Supply Voltage (V) Figure A. Turn-On Propagation Delay Figure B. Turn-On Propagation Delay vs. Supply Voltage Turn-Off Propagation Delay (ns) Turn-Off Propagation Delay (ns) 8 Supply Voltage (V) Figure A. Turn-Off Propagation Delay Figure B. Turn-Off Propagation Delay vs. Supply Voltage 7

8 Turn-On Rise Time (ns) 8 Turn-On Rise Time (ns) Figure A. Turn-On Rise Time 8 Supply Voltage (V) Figure B. Turn-On Rise Time vs. Supply Voltage 8 8 Turn-Off Fall Time (ns) Typ Turn-Off Fall Time (ns) Figure 7A. Turn-Off Fall Time 8 Supply Voltage (V) Figure 7B. Turn-Off Fall Time vs. Supply Voltage 8

9 9 9 Deadtime (ns) 7 Deadtime (ns) Supply Voltage (V) Figure 8A. Deadtime Figure 8B. Deadtime vs. Supply Voltage Deadtime (µs) 7 R DT (kω ) Input Voltage (V) Figure 8C. Deadtime vs. R DT Figure 9A. Logic "" Input Voltage 9

10 Input Voltage (V) 8 V BIAS Supply Voltage (V) Figure 9B. Logic "" Input Voltage vs. Supply Voltage Logic "" Input Voltage (V) Figure A. Logic "" Input Voltage Logic "" Input Voltage (V) 8 Supply Voltage (V) Figure B. Logic "" Input Voltage vs. Supply Voltage High Level Output Voltage (V) Figure A. High Level Output Voltage (I o = ma)

11 High Level Output Voltage (V).... Max.. 8 V BIAS Supply Voltage (V) Low Level Output (V) Figure B. High Level Output Voltage vs. Supply Voltage (I o = ma) Figure A. Low Level Output Low Level Output (V) Offset Supply Leakage Current ( A) Supply Voltage (V) Figure B. Low Level Output vs. Supply Voltage Figure A. Offset Supply Leakage Current

12 Offset Supply Leakage Current ( A) V B Boost Voltage (V) Figure B. Offset Supply Leakage Current vs. V B Boost Voltage V BS Supply Current ( A) Figure A. V BS Supply Current V BS Supply Current ( A) Supply Current (ma) 8 V BS Floating Supply Voltage (V) Figure B. V BS Supply Current vs. V BS Floating Supply Voltage Figure A. Supply Current

13 Supply Current (ma) 8 Logic "" Input Bias Cur rent ( A) Supply Voltage (V) Figure B. Supply Current vs. Supply Voltage Figure A. Logic "" Input Bias Current Logic "" Input Bias Current (A) 8 8 Supply Voltage (V) Figure B. Logic "" Input Bias Current vs. Supply Voltage Logic "" Input Bias Current (µa) Max Temperature ( C) Figure 7A. Logic "" Input Bias Current

14 Logic "" Input Bias C urrent (µa) Max 8 Supply Voltage (V) Figure 7B. Logic "" Input Bias Current vs. Voltage and V BS UV Threshold (+) (V) Figure 8. and V BS Undervoltage Threshold (+) and V BS UV Threshold (-) (V) Output Source Current (A) Figure 9. and V BS Undervoltage Threshold (-) Figure A. Output Source Current

15 Output Source Current (A) 8 Supply Voltage (V) Figure B. Output Source Current vs. Supply Voltage Output Sink Current (A) Figure A. Output Sink Current Output Sink Current (A) Temprature ( o C) 8 V 7 V V 8 Supply Voltage (V) Figure B. Output Sink Current vs. Supply Voltage Figure. IRS8 vs. Frequency (IRFBC), = Ω,

16 8 V 7 V V 8 V 7 V V Figure. IRS8 vs. Frequency (IRFBC), = Ω, Figure. IRS8 vs. Frequency (IRFBC), = Ω, V 7 V V 8 8 V 7 V V Figure. IRS8 vs. Frequency (IRFPE), = Ω, Figure. IRS8 vs. Frequency (IRFBC), = Ω,

17 8 V 7 V V 8 V 7 V V Figure 7. IRS8 vs. Frequency (IRFBC), = Ω, Figure 8. IRS8 vs. Frequency (IRFBC), = Ω, V 8 7 V V 8 V 7 V V Figure 9. IRS8 vs. Frequency (IRFPE), = Ω, Figure. IRS8S vs. Frequency (IRFBC), = Ω, 7

18 V 7 V 8 V 7 v V Figure. IRS8S vs. Frequency (IRFBC), = Ω, 8 V Figure. IRS8S vs. Frequency (IRFBC), = Ω, V 7 V V Tempreture ( o C) 8 Figure. IRS8S vs. Frequency (IRFPE), = Ω, 8 V 7 V V Figure. IRS8S vs. Frequency (IRFBC), = Ω, 8

19 8 V 7 V V Figure. IRS8S vs. Frequency (IRFBC), = Ω, 8 V 7 V V Figure. IRS8S vs. Frequency (IRFBC), = Ω, 8 V 7 V V Figure 7. IRS8S vs. Frequency (IRFPE), = Ω, 9

20 Case outlines 8-Lead PDIP - - (MS-AB) A E X D 8 7 e B H. [.] A. [.] X.7 [.] FOOTPRINT 8X.7 [.8] 8X.78 [.7] DIM INC HES MILLIMETERS MIN MAX MIN MAX A A b.... c D E e. BASIC.7 BASIC e. BASIC. BASIC H K L y e A C y K x 8X b A. [.] C A B. [.] 8X L 7 8X c NOTES:. DIMENSIONING & TOLERANCING PER ASME Y.M-99.. CONTROLLING DIMENSION: MILLIMETER. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].. OUTLINE CONFORMS TO JEDEC OUTLINE MS-AA. 8-Lead SOIC DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED. [.]. DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED. [.]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE (MS-AA)

21 -Lead PDIP - - (MS-AC) -Lead SOIC (narrow body) -9 - (MS-AB)

22 Tape & Reel 8-lead SOIC LOADED TA PE FEED DIRECTION B A H D F C N OTE : CONTROLLING D IMENSION IN MM E G CARRIER TAPE DIMENSION FOR 8SOICN M etr ic Im p erial Code Min Max Min Max A B.9... C D E F G. n/a.9 n/a H F D E C B A G H REEL DIMENSIONS FOR 8SOICN M etr ic Im p erial Code Min Max Min Max A B C D E F n/a 8. n/a.7 G H

23 Tape & Reel -lead SOIC LOADED TA PE FEED DIRECTION B A H D F C N OTE : CONTROLLING D IMENSION IN MM E G CARRIER TAPE DIMENSION FOR SOICN M etr ic Im p erial Code Min Max Min Max A B.9... C D E.... F G. n/a.9 n/a H F D E C B A G H REEL DIMENSIONS FOR SO IC N M etr ic Im p erial Code Min Max Min Max A B C D E F n/a. n/a.88 G H

24 LEADFREE PART MARKING INFORMATION Part number Date code IRxxxxxx S YWW? IR logo Pin Identifier? MARKING CODE P Lead Free Released Non-Lead Free Released?XXXX Lot Code (Prod mode - digit SPN code) Assembly site code Per SCOP - ORDER INFORMATION 8-Lead PDIP IRS8PbF 8-Lead SOIC IRS8SPbF 8-Lead SOIC Tape & Reel IRS8STRPbF -Lead PDIP IRS8PbF -Lead SOIC IRS8SPbF -Lead SOIC Tape & Reel IRS8STRPbF The SOIC-8 is MSL qualified. The SOIC- is MSL qualified. This product has been designed and qualified for the industrial level. Qualification standards can be found at IR WORLD HEADQUARTERS: Kansas St., El Segundo, California 9 Tel: () -7 Data and specifications subject to change without notice. /7/

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