Microelectronic Circuits II. Ch 8 : Frequency Response
|
|
|
- Roxanne Gilbert
- 5 years ago
- Views:
Transcription
1 Micrelectrnic ircuits h 8 : Frequency esnse 8.2 Hih-Frequency Mdel f the MOSFET and the BJT 8.3 Hih-Frequency esnse f S & E Alifier NU EE 8.-
2 nternal aacitive Effects and Hih-Frequency Mdel f MOSFET - Gain fall-ff at the l-frequency end : culin & byass caacitrs - Gain fallff at hih frequency : caacitive effects internal t the transistrs - aacitive effects & device sall-nal taken these effects int accunted nternal caacitances in the MOSFET - Assutin: steady-state chares n the ate-t-channel caacitance are acquired instantaneusly : cnstant alifier ains indeendent f frequency à finite tie is required t chare & dischare the varius internal caacitances Gate caacitive effect: - arallel-late caacitr ith ate electrde (lysilicn) & the channel, - the xide layer as the caacitr dielectric à ate caacitance x Surce-bdy and drain-bdy deletin-layer caacitances: - the caacitances f the reverse-biased n junctins fred by - n surce rein (surce diffusin) and the -tye substrate, - n drain rein (drain diffusin) and the substrate. Five caacitances :, d, b, sb and db The ain f MOSFET alifiers falls ff at se hih frequency NU EE 8.-2
3 MOSFET nternal aacitances Gate caacitive effect:, d & b - x : xide caacitance (e x t x ) () When v DS << in TODE rein d Wx 2 (2) n SATUATON 2 W 3 (3) n UT-OFF v d W v x x ; 0; b d (4) Overla caacitance 0 W here v 0.05~0. W x : ate-channel caacitance x Junctin caacitances: t reverse biased n junctins sb db sb0 SB db0 0 DB 0 here 0 : junctin built-in vltae (0.6~0.8 ) SB, DB : reverse bias vltae NU EE 8.-3
4 Hih-Frequency MOSFET Mdel sall-nal del f the MOSFET includin, d, sb and db redicts hih-frequency resnse f MOSFET alifier is liited t cuter siulatin, SPE NU EE 8.-4
5 Hih-Frequency MOSFET Mdel When the surce is cnnected t the bdy d lays a nificant rle in the hih frequency resnse When db is nelected. NU EE 8.-5
6 MOSFET Unity-Gain Frequency (f T ) MOSFET Unity-ain frequency (f T ): the frequency at hich the shrt-circuit current-ain f the cn-surce cnfiuratin beces unity : transitin frequency 0 - s d» i s ( ) d i d << at the frequencies f interest s ( ) d NU EE 8.-6
7 MOSFET Unity-Gain Frequency (f T ) i s ( ) ( ) d i d fr s j The anitude f the current ain beces unity at \ T T ( ) 2 ( ) d f d Since f T is rrtinal t and inversely rrtinal t the FET internal caacitances, the hiher the value f f T, the re effective the FET beces as an alifier. f T : 00 MHz at 5 MOS rcess r any GHz at 0.3 rcess NU EE 8.-7
8 MOSFET Hih-Frequency Mdel Suary NU EE 8.-8
9 The BJT internal aacitances and Hih- Frequency del Transistr del includin caacitrs r inductrs - tie r frequency deendence - chare strae henena that liit seed f frequency resnse - add caacitances t the hybrid- del The Base-harin r Diffusin aacitance de - Q n : inrity-carrier chare stred in the base rein eratin in the active de Q n 2 W i t Fi here t F 2D n 2 W 2D - t F : frard base-transit tie : averae tie a chare carrier (electrn) sends in crssin the base (0 s ~ 00 s) - Since i ~ exnentially v BE & Q n ~ v BE à nnlinear caacitive effect - sall-nal diffusin caacitance de : n de º dq dv n BE di t F t F dvbe t F T NU EE 8.-9
10 BJT nternal aacitances Base-Eitter Junctin caacitance je - deletin-layer caacitance at the base-eitter junctin - æ ö BE je je 2 0 ç - je0 0e» è ø hen EBJ is frard biased in the active de here je0 : je at zer vltae, 0e : EBJ built-in vltae (~ 0.9), : 0.5 llectr-base Junctin caacitance - deletin caacitance hen BJ is reverse biased in active-de eratin æ ç è B ç 0 0c ö ø - here 0 : at zer vltae, 0c : BJ built-in vltae (~ 0.75), : 02~0.5 BJT internal caacitances - eitter-base caacitance de je (a fe F ~ a fe tens f F) - cllectr-base caacitance ( a fractin f F ~ a fe F) NU EE 8.-0
11 Hih-Frequency Hybrid- Mdel BJT internal caacitances - eitter-base caacitance de je (a fe F ~ a fe tens f F) - cllectr-base caacitance ( a fractin f F ~ a fe F) Added esistr r x - resistance f the silicn aterial f the base rein beteen the base terinal B and a fictitius internal base terinal B - a fe tens f hs, r x << r - dinant effect at hih frequency NU EE 8.-
12 utff Frequency h fe, E shrt-circuit current ain t deterine & b c ( - s ) b ( r ) r s h fe º c b» s - s r s ( ) ( ) r s( ) r r b 0 hen here b 0 : l-frequency value f b b ( ) r NU EE 8.-2 >> s - h fe : sinle-le (ST) resnse ith a 3-dB frequency at b
13 utff Frequency Unity-ain bandidth T - the frequency at hich h fe Since f T T h fe b 0 2 b ( ) b s b ariatin f f T ith - f T : 00MHz ~ tens f GHz - the hih-frequency hybrid- del is effective u t a frequency f abut 0.2f T NU EE 8.-3
14 BJT Hih-Frequency Mdel Suary NU EE 8.-4
15 Hih-Frequency resnse f S Alifiers Objective : dentify the echanis that liits the hih-frequency erfrance f the S alifiers - f H at hich the ain falls by 3dB bel its value at idband frequencies A M - sile arach t find f H fr discrete-circuit, caacitively culed alifiers and alifiers - At the hih-frequency band, all culin and byass caacitrs behave as erfect shrt circuits Frequency resnse f a direct-culed (dc) alifier. The ain des nt fall ff at l frequency, and the idband ain A M extends dn t zer frequency NU EE 8.-5
16 n-surce Alifier frequency indeendent analysis -, 2, S (F): shrt circuit -, d (F rane): en circuit - A M cnstant in the idband A M º - G G ( r D ) S alifier hih-frequency equivalent circuit del - Eliinatin D surces - D : a assive resistance r the utut resistance f a current-surce lad - Silified by Thevenin there at the inut and the utut à inut : &, three arallel resistance : r D - Midband ain A M by d 0 ( ) NU EE 8.-6 A M - G G
17 Hih-frequency resnse f S alifier - bridin caacitr d that cnnects the utut nde & the inut nde - lad current ( d ) : à utut current f transistr à d current sulied thruh d - At frequency in the vicinity f f H, i d << at the frequency à is arxiated by O d» -( ) - - at XX,the existence f d is knn nly thruh d à relace s d ( - ) d by an equivalent caacitance eq beteen ate & rund as ln as eq dras a sae d s s d d [ ( - (- ) )] s eq > eq s d d ( ( ) ) - d à uch larer eq (ultilicatin effect) because d is cnnected beteen ndes G and D, hse vltaes are related by a lare neative ain (- ). - Multilicatin effect à Miller effect, ( ) à Miller ultilier NU EE 8.-7
18 NU EE 8.-8 Hih-frequency resnse f S alifier ith d relaced ith eq - ST circuit f l-ass tye 2 2 ) ( ) ( in H H in H H M G G G d eq in in G G f s A s s ø ö ç ç è æ - ø ö ç ç è æ - hih-frequency resnse lt l-ass ST netrk ith a 3-dB frequency f H deterined by the tie cnstant in
19 Hih-frequency resnse f S alifier l-ass ST netrk ith a uer 3-dB frequency f H by tie cnstant in 3-dB frequency by G & in d ( ) - ~ since G >> - larer à ler f H in is dinated by eq, hich is ade larer by the ultilicatin effect f d Multilicatin factr ( ) is arxiately equal t the idband ain f the alifier Miller effect causes the S alifier t have a lare ttal inut caacitance in and hence a l f H Multilicatin effect f d because it is cnnected beteen t ndes hse vltaes are related by a larer neative ain (- ) à Miller effect & ( ) : Miller ultilier T extend the hih-frequency resnse, Miller effect ust be absent r at least reduced ST del is based n nelectin d relative t NU EE 8.-9
20 n-eitter alifier frequency indeendent analysis -, 2, E (F): shrt circuit -, (F rane): en circuit - A M cnstant in the idband A M º ( B r ) - ( r ) B ( r three frequency bands - idband : useful band f alifier - l-frequency band :, 2, E - hih-frequency band :, ) bandidth r 3-dB bandidth BW f H f ~ f H hen f << f H ain-bandidth rduct GB A M BW : trade-ff ain fr bandidth NU EE 8.-20
21 Hih-frequency resnse f E alifier E alifier equivalent circuit Thevenin there tice at the inut side: & three arallel resistance r bridin caacitr lad current Since << arund f H Silified circuit at the inut & utut NU EE 8.-2 O» -( s s s ( [ ) - ( - (- - ) ) relace by eq beteen B & rund sae dran s eq > eq s ( ( ) )] )
22 NU EE Hih-frequency resnse f E alifier ST circuit by usin eq ) ( ) ( in H in M B x B B eq in in f s A s r r r s ø ö ç ç è æ -
23 Hih-frequency resnse f E alifier l-ass ST netrk ith a uer 3-dB frequency f H by tie cnstant in 3-dB frequency f H - ~ r if B >> & r x << à ~ r if >>r à if ~ r, influences n f H in is dinated by eq, hich is ade larer by the ultilicatin effect f ultilicatin effect f because it is cnnected beteen t ndes hse vltaes are related by a larer neative ain (- ) à Miller effect & ( ) : Miller ultilier à increased in by Miller effect in E alifier à ler f H Miller effect ust be reduced fr the irved hih-frequency resnse ST del is based n nelectin relative t NU EE 8.-23
Microelectronic Circuits II. Ch 6 : Building Blocks of Integrated-Circuit Amplifier
Micrelectrnic Circuits II Ch 6 : Building Blcks f Integrated-Circuit Amplifier 6.1 IC Design Philsphy 6.A Cmparisn f the MOSFET and the BJT 6.2 The Basic Gain Cell CNU EE 6.1-1 Intrductin Basic building
EE 255 ELECTRONICS I LABORATORY EXPERIMENT 1 RESONANT CIRCUITS
EE 255 EETNIS I ABATY EXPEIMENT 1 ESNANT IUITS BJETIVES In this exeriment yu will earn hw resnant circuits can be used t make bandass and band-reject filters. Gain exerience in measuring the frequency
Chapter 4. Junction Field Effect Transistor Theory and Applications
Chapter 4 Junction Field Effect Transistor Theory and Applications 4.0 ntroduction Like bipolar junction transistor, junction field effect transistor JFET is also a three-terinal device but it is a unipolar
Output Stages. Microelectronic Circuits. Ching-Yuan Yang. National Chung-Hsing University Department of Electrical Engineering.
Micrelectrnic Circuits Output Stages Ching-Yuan Yang Natinal Chung-Hsing University Department f Electrical Engineering Outline Classificatin f Output Stages Class A Output Stage Class B Output Stage Class
L It indicates that g m is proportional to the k, W/L ratio and ( VGS Vt However, a large V GS reduces the allowable signal swing at the drain.
Field-Effect Transistors (FETs) 3.9 MOSFET as an Aplifier Sall-signal equivalent circuit odels Discussions about the MOSFET transconductance W Forula 1: g = k n ( VGS Vt ) L It indicates that g is proportional
Lecture 11. Active Devices -- BJT & MOSFET. Agenda: MOSFET Small-signal Model. Active Devices -- BJT & MOSFET. Cross-section
EEL6935 Advanced MEMS (Spring 2005) Intructr: Dr. Huikai Xie Device -- BJT & MOSFET Agenda: Lecture Amplifier Baic Device mdel Current mirrr Single-tage amplifier Operatinal amplifier cnfiguratin Cr-ectin
C H A P T E R 5. Amplifier Design
C H A P T E 5 Amplifier Design The Common-Source Amplifier v 0 = r ( g mvgs )( D 0 ) A v0 = g m r ( D 0 ) Performing the analysis directly on the circuit diagram with the MOSFET model used implicitly.
Analog Integrated Circuits. Lecture 6: Noise Analysis
Analo Interated Circuits Lecture 6: Noise Analysis ELC 60 Fall 03 Dr. Ahmed Nader Dr. Mohamed M. Aboudina anader@ieee.or maboudina@mail.com Department of Electronics and Communications Enineerin Faculty
Single Stage Amplifier
CHAPTE 3 Sle Stae Aplifier Analo IC Analysis and esin 3- Chih-Chen Hsieh Outle. Coon-Source Aplifier. Coon-Source Ap with Source eeneration 3. Coon-ra Aplifier 4. Coon-Gate Aplifier 5. Cascode Aplifier
Differential Amplifier with Active Load
EEEB73 Electronics nalysis & Desin (7) Differential plifier with ctive Loa Learnin Outcoe ble to: Describe active loas. Desin a iff-ap with an active loa to yiel a specifie ifferential-oe voltae ain. Reference:
Radio Frequency Electronics
Radio Frequency Electronics Active omonents III Samuel Morse Born in 1791 in Massachusetts Fairly accomlished ainter After witnessing various electrical exeriments, got intrigued by electricity Designed
ECE145a / 218a: Notes Set 5 device models & device characteristics:
ECE145a / 218a: Notes Set 5 device models & device characteristics: Mark odwell University of California, Santa Barbara rodwell@ece.ucsb.edu 805-893-3244, 805-893-3262 fax Content: Bipolar Transistor M
Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;
Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known
DEI 1028 Voltage Clamping Circuit
Device Engineering Incrprated 385 East Alam Drive handler, AZ 85225 Phne: (48) 33-822 Fax: (48) 33-824 E-mail: admin@deiaz.cm DEI 128 ltage lamping ircuit Features Prtectin fr pwer electrnics n 28D avinics
Lecture 36: MOSFET Common Drain (Source Follower) Amplifier.
Whites, EE 320 Lecture 36 Page 1 of 11 Lecture 36: MOSFET Coon Drain (Source Follower) Aplifier. The third, and last, discrete-for MOSFET aplifier we ll consider in this course is the coon drain aplifier.
Microwave Amplifier Design
Micrwave Amplifier Des Micrwave Amplifier Des Tw-rt wer as Fiure - (p. 537) A tw-prt netwrk with eneral surce an la impeances. wer Available a, a Transucer wer A avn avs a T,,, avs avn avs ut Tw rt wer
Microelectronics Circuit Analysis and Design. MOS Capacitor Under Bias: Electric Field and Charge. Basic Structure of MOS Capacitor 9/2/2013
Micrelectrics Circuit Aalysis ad Desig Dald A. Neae Chapter 3 The Field Effect Trasistr I this chapter, we will: Study ad uderstad the perati ad characteristics f the varius types f MOSFETs. Uderstad ad
MOS Field-Effect Transistors (MOSFETs)
6 MOS Field-Effect Transistors (MOSFETs) A three-terminal device that uses the voltages of the two terminals to control the current flowing in the third terminal. The basis for amplifier design. The basis
Single-Stage BJT Amplifiers and BJT High-Frequency Model. Single-Stage BJT Amplifier Configurations
1 Single-Stage BJT Amplifiers and BJT High-Frequency Model Asst. Prof. MONTREE SIRIPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s
Gechstudentszone.wordpress.com
UNIT 4: Small Signal Analysis of Amplifiers 4.1 Basic FET Amplifiers In the last chapter, we described the operation of the FET, in particular the MOSFET, and analyzed and designed the dc response of circuits
ECE 255, Discrete-Circuit Amplifiers
ECE 255, Discrete-Circuit Amplifiers 20 March 2018 In this lecture, we will continue with the study of transistor amplifiers with the presence of biasing circuits and coupling capacitors in place. We will
EE 435 Lecture 12. OTA circuits. Cascaded Amplifiers. -- Stability Issues. -- Two-Stage Op Amp Design
EE 435 Lecture 12 OTA circuits Cascaded Amplifiers -- Stability Issues -- Two-Stae Op Amp Desin Review from last lecture: Current Mirror Op Amp W/O CMFB DD M : 1 1 : M M meq m1 Often termed an OTA I T
BJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
Midterm 2 Exam. Max: 90 Points
Midterm 2 Exam Name: Max: 90 Points Question 1 Consider the circuit below. The duty cycle and frequency of the 555 astable is 55% and 5 khz respectively. (a) Determine a value for so that the average current
EE105 Fall 2015 Microelectronic Devices and Circuits
EE105 Fall 2015 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 11-1 Transistor Operating Mode in Amplifiers Transistors are biased in flat part of
A Basis for LDO and It s Thermal Design
A Basis fr LDO and It s Thermal Design Hawk Chen Intrductin The AIC LDO family device, a 3-terminal regulatr, can be easily used with all prtectin features that are expected in high perfrmance vltage regulatin
EE 435 Lecture 11. Current Mirror Op Amps -- Alternative perspective -- Loop phase-shift concerns. OTA circuits
EE 435 Lecture 11 Current Mirror Op Amps -- Alternative perspective -- Loop phase-shift concerns OTA circuits Review from last lecture: Current Mirror Op Amp W/O CMFB DD M : 1 1 : M M meq m1 Often termed
Lecture 34: MOSFET Common Gate Amplifier.
Whites, EE 320 Lecture 34 Page 1 of 10 Lecture 34: MOSFET Coon Gate Aplifier. We ll continue our discussion of discrete MOSFET aplifiers we began with the coon source aplifier in Lectures 31 and 32. Here
Three Terminal Devices
Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering
The fan-in of a logic gate is defined as the number of inputs that the gate is designed to handle.
8 Lgic Families Characteristics f Digital IC Threshld Vltage The threshld vltage is defined as that vltage at the input f a gate which causes a change in the state f the utput frm ne lgic level t the ther.
] (1) Problem 1. University of California, Berkeley Fall 2010 EE142, Problem Set #9 Solutions Prof. Jan Rabaey
![] (1) Problem 1. University of California, Berkeley Fall 2010 EE142, Problem Set #9 Solutions Prof. Jan Rabaey](/thumbs/81/84143587.jpg "] (1) Problem 1. University of California, Berkeley Fall 2010 EE142, Problem Set #9 Solutions Prof. Jan Rabaey")
University of California, Berkeley Fall 00 EE4, Proble Set #9 Solutions Ain Arbabian Prof. Jan Rabaey Proble Since the ixer is a down-conversion type with low side injection f LO 700 MHz and f RF f IF
Review of Electronic I. Lesson #2 Solid State Circuitry Diodes & Transistors Chapter 3. BME Electronics II J.Schesser
Review f Electrnic I Lessn #2 Slid State Circuitry Dides & Transistrs Chapter 3 ME 498008 Electrnics II 55 Dides Typical Dide VI Characteristics Frward ias Regin Reverse ias Regin Reverse reakdwn Regin
Chapter 8. Field Effect Transistor
Chapter 8. Field Effect Transistor Field Effect Transistor: The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There
97.398*, Physical Electronics, Lecture 21. MOSFET Operation
97.398*, Physical Electronics, Lecture 21 MOSFET Operation Lecture Outline Last lecture examined the MOSFET structure and required processing steps Now move on to basic MOSFET operation, some of which
EE 330 Lecture 33. High Gain Amplifiers Current Sources and Mirrors The Cascode Configuration
EE 330 Lecture 33 Hih Gain mplifiers Current Sources and Mirrors The Cascode Confiuration Review from Last Lecture Hih-ain amplifier V DD I B i B V BE π m V BE 0 V EE This ain is very lare (but realistic)!
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-8 Junction Field
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-7 High Frequency
Chapter 7. Gate Drive circuit Design
Chapter 7 Gate Drive circuit Desin CONTENTS Pae 1 IGBT drive conditions and main characteristics 7-2 2 Drive current 7-5 3 Settin dead-time 7-7 4 Concrete examples of drive circuits 7-9 5 Drive circuit
MEASUREMENT AND INSTRUMENTATION STUDY NOTES UNIT-I
MEASUREMENT AND INSTRUMENTATION STUDY NOTES The MOSFET The MOSFET Metal Oxide FET UNIT-I As well as the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available
ECE 255, MOSFET Amplifiers
ECE 255, MOSFET Amplifiers 26 October 2017 In this lecture, the basic configurations of MOSFET amplifiers will be studied similar to that of BJT. Previously, it has been shown that with the transistor
F7 Transistor Amplifiers
Lars Ohlsson 2018-09-25 F7 Transistor Amplifiers Outline Transfer characteristics Small signal operation and models Basic configurations Common source (CS) CS/CE w/ source/ emitter degeneration resistance
Physics 116A Fall 2000: Final Exam
Physics 6A Fall 2000: Final Exam 2//2000 (rev. 2/0) Closed book and notes except for three 8.5 in 2 sheets of paper. Show reasoning for full credit. There are 6 problems and 200 points. Note: complex quantities
Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi
Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Module No # 05 FETS and MOSFETS Lecture No # 06 FET/MOSFET Amplifiers and their Analysis In the previous lecture
ESE319 Introduction to Microelectronics High Frequency BJT Model & Cascode BJT Amplifier
High Frequency BJT Model & Cascode BJT Amplifier 1 Gain of 10 Amplifier Non-ideal Transistor C in R 1 V CC R 2 v s Gain starts dropping at > 1MHz. Why! Because of internal transistor capacitances that
Compound Semiconductors; GaN and SiC, Separating Fact from Fiction in both Research and Business
6/25/2013 Cmpund Semicnductrs; and, Separating Fact frm Fictin in bth Research and Business Prfessr Umesh Mishra, Ph.D. Redefining Energy Efficiency Cmpund semicnductrs separating Fact frm Fictin Why d
IENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET)
ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET) LONG QUESTIONS (10 MARKS) 1. Draw the construction diagram and explain the working of P-Channel JFET. Also draw the characteristics curve and transfer
Electronics I - Physics of Bipolar Transistors
Chapter 5 Electronics I - Physics of Bipolar Transistors B E N+ P N- C B E C Fall 2017 claudio talarico 1 source: Sedra & Smith Thin Base Types of Bipolar Transistors n+ p n- Figure - A simplified structure
Introduction to semiconductor technology
Introduction to semiconductor technology Outline 7 Field effect transistors MOS transistor current equation" MOS transistor channel mobility Substrate bias effect 7 Bipolar transistors Introduction Minority
ECE 255, MOSFET Basic Configurations
ECE 255, MOSFET Basic Configurations 8 March 2018 In this lecture, we will go back to Section 7.3, and the basic configurations of MOSFET amplifiers will be studied similar to that of BJT. Previously,
List... Package outline... Features Mechanical data... Maximum ratings... Electrical Characteristics... Rating and characteristic curves...
SMD NPN Transistr / Frmsa MS List List... Package utline... 2 Features... 2 Mechanical data... Maximum ratings... Electrical haracteristics... Rating and characteristic curves... 2 2 3~4 5~6 Pinning infrmatin...
VLBA Electronics Memo No. 737
VLBA Electrnics Mem N. 737 U S I N G PULSECAL A M P L I T U D E S TO D E T E R M I N E SYSTEM T E M P E R A T U R E D.S.Bagri 1993Mar05 INTRODUCTION System temperature is nrmally measured using mdulated
IRG4BC20FPbF Fast Speed IGBT
PD - 95742 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20FPbF Fast Speed IGBT Features C Fast: Optimized fr medium perating frequencies ( -5 khz in hard switching, >20 khz in resnant mde). Generatin 4 IGBT
LAB IX. LOW FREQUENCY CHARACTERISTICS OF JFETS
LAB X. LOW FREQUENCY CHARACTERSTCS OF JFETS 1. OBJECTVE n this lab, you will study the -V characteristics and small-signal model of Junction Field Effect Transistors (JFET).. OVERVEW n this lab, we will
EE 462: Laboratory Assignment 6 Biasing of Transistors: N- channel MOSFET
EE 46: Laboratory Assignment 6 Biasing of Transistors: N channel MOFET by r. A.V. adun and r... onohue (10//03 eartment of Elecical and Comuter Engineering University of entucky Lexington, Y 40506 Laboratory
Design Of The Miller Opamp
Miller Opamp Desin Of The Miller Opamp The Miller opamp is made up of Input differential stae Simple MOS OTA A second ain stae ommon Source Amplifier The desin of a Miller opamp is beneficial as a learnin
Summary of Lecture Notes on Metal-Oxide-Semiconductor, Field-Effect Transistors (MOSFETs)
Mani Vaidyanathan 1 Summary of Lecture Notes on Metal-Oxide-Semiconductor, Field-Effect Transistors (MOSFETs) Introduction 1. We began by asking, Why study MOSFETs? The answer is, Because MOSFETs are the
KOREA UNIVERSITY. Photonics Laboratory. Ch 15. Field effect Introduction-The J-FET and MESFET
Ch 15. Field effect Introduction-The J-FET and MESFET : (a) The device worked on the principle that a voltage applied to the metallic plate modulated the conductance of the underlying semiconductor, which
EIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices
EIE209 Basic Electronics Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage
EE380: Exp. 2. Measurement of Op-Amp Parameters and Design/ Verification of an Integrator
EE380: Exp. 2 Measurement Op-Amp Parameters and Design/ Veriicatin an Integratr Intrductin: An Opamp is a basic building blck a wide range analg circuits. T carry ut design circuits cnsisting ne r mre
Prof. Paolo Colantonio a.a
Prof. Paolo Colantonio a.a. 20 2 Field effect transistors (FETs) are probably the simplest form of transistor, widely used in both analogue and digital applications They are characterised by a very high
Digital Electronics. By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology
K. N. Toosi University of Technology Chapter 7. Field-Effect Transistors By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology http://wp.kntu.ac.ir/faradji/digitalelectronics.htm
TO-92 SOT-23 Mark: ZC. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
N MMBT N / MMBT B E TO-9 SOT-3 Mark: Z B E This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz as an amplifier. Abslute Maximum
Operational Amplifiers High Speed Operational Amplifiers
F Electrnics: Operatinal Amplifiers Page 11.1 Operatinal Amplifiers High Speed Operatinal Amplifiers Operatinal amplifiers with 3 db bandwidths f up t 1.5 GHz are nw available, such peratinal amplifiers
List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics Rating and characteristic curves...
N-hannel SM MOSFET Frmsa MS List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... 2 2 Electrical characteristics... 3 Rating and characteristic curves... 4 Pinning infrmatin...
FIELD EFFECT TRANSISTORS
FIELD EFFECT TRANSISTORS Module 5 Introduction Symbol Features: 1. Voltage is applied across gate and source terminals. This voltage controls the drain current. Hence FET is a voltage controlled device.
PHYS225 Lecture 6. Electronic Circuits
PHYS225 Lecture 6 Electronic Circuits Transistors History Basic physics of operation Ebers-Moll model Small signal equivalent Last lecture Introduction to Transistors A transistor is a device with three
Field Effect Transistors (npn)
Field Effect Transistors (npn) gate drain source FET 3 terminal device channel e - current from source to drain controlled by the electric field generated by the gate base collector emitter BJT 3 terminal
(a) Current-controlled and (b) voltage-controlled amplifiers.
Fig. 6.1 (a) Current-controlled and (b) voltage-controlled amplifiers. Fig. 6.2 Drs. Ian Munro Ross (front) and G. C. Dacey jointly developed an experimental procedure for measuring the characteristics
Solid State Device Fundamentals
Solid State Device Fundamentals 4.4. Field Effect Transistor (MOSFET) ENS 463 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 4N101b 1 Field-effect transistor (FET)
Prof. Anyes Taffard. Physics 120/220. Diode Transistor
Prof. Anyes Taffard Physics 120/220 Diode Transistor Diode One can think of a diode as a device which allows current to flow in only one direction. Anode I F Cathode stripe Diode conducts current in this
Phy 335, Unit 4 Transistors and transistor circuits (part one)
Mini-lecture topics (multiple lectures): Phy 335, Unit 4 Transistors and transistor circuits (part one) p-n junctions re-visited How does a bipolar transistor works; analogy with a valve Basic circuit
55:041 Electronic Circuits The University of Iowa Fall Exam 1 Solution
Exam 1 Name: Score /60 Question 1 Short takes. For True/False questions, write T, or F in the right-hand column as appropriate. For other questions, provide answers in the space provided. 1. Tue of false:
Lecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and
Lecture 16: MOS Transistor models: Linear models, SPICE models Context In the last lecture, we discussed the MOS transistor, and added a correction due to the changing depletion region, called the body
INTRODUCTION: Basic operating principle of a MOSFET:
INTRODUCTION: Along with the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available whose Gate input is electrically insulated from the main current carrying
参考資料 E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N44 MMBT44 2N44 / MMBT44 E B E TO-92 SOT-23 Mark: 2X B NPN General Pupse Amplifier This device is designed fr use as a medium pwer amplifier and switch requiring cllectr currents up t 5 ma. Abslute Maximum
UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s.
UNIT-I FIELD EFFECT TRANSISTOR 1. Explain about the Field Effect Transistor and also mention types of FET s. The Field Effect Transistor, or simply FET however, uses the voltage that is applied to their
Differential Amplifier
CHAPTE 4 ifferential Aplifier Analo IC Analysis and esin 4- Chih-Chen Hsieh Outline. Sinle-Ended and ifferential Operation. Basic ifferential Pair 3. Coon-Mode esponse 4. ifferential Pair with MOS Loads
ECEN474/704: (Analog) VLSI Circuit Design Spring 2018
EEN474/704: (Analo) SI ircuit esin Sprin 018 ecture 3: MOS ransistor Modelin Sam Palermo Analo & Mixed-Sinal enter exas A&M Uniersity Aenda MOS ransistor Modelin are-sinal Model Small-Sinal A Model MOS
COMPARISON OF THE MOSFET AND THE BJT:
COMPARISON OF THE MOSFET AND THE BJT: In this section we present a comparison of the characteristics of the two major electronic devices: the MOSFET and the BJT. To facilitate this comparison, typical
EE70 - Intro. Electronics
EE70 - Intro. Electronics Course website: ~/classes/ee70/fall05 Today s class agenda (November 28, 2005) review Serial/parallel resonant circuits Diode Field Effect Transistor (FET) f 0 = Qs = Qs = 1 2π
LECTURE 19 DIFFERENTIAL AMPLIFIER
Lecture 19 Differential Amplifier (6/4/14) Page 191 LECTURE 19 DIFFERENTIAL AMPLIFIER LECTURE ORGANIZATION Outline Characterization of a differential amplifier Differential amplifier with a current mirror
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
INSULATED GATE BIPOLAR TRANSISTOR PD - 9587 IRG4PH40UPbF Ultra Fast Speed IGBT Features UltraFast: Optimized fr high perating frequencies up t 40 khz in hard switching, >200 khz in resnant mde New IGBT
UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press
UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth
Lecture-45. MOS Field-Effect-Transistors Threshold voltage
Lecture-45 MOS Field-Effect-Transistors 7.4. Threshold voltage In this section we summarize the calculation of the threshold voltage and discuss the dependence of the threshold voltage on the bias applied
MOS Field Effect Transistors
MOS Field Effect Transistors A gate contact gate interconnect n polysilicon gate source contacts W active area (thin oxide area) polysilicon gate contact metal interconnect drain contacts A bulk contact
Filter Design. Filter Design by INSERTION LOSS METHOD controls Γ(ω) to control passband and stopband of filter. sabarina/ppkkp 1
Filter Desin Filter Desin by INSERTION LOSS METHOD cntrls Γ(ω) t cntrl passband and stpband f filter. sabarina/ppkkp 1 Filter parameters Passband -- frequencies that are passed by filter. Stpband -- frequencies
THE DDL~c A~T\J\JO~KS
PATTERN NUMBER 14.WRST se the skirt center back sea. Finish sea edge. 15.Se three snaps n bdice back. 16.Hand stitch the ribbn rse garland n the bdice lace beteen the t rs f stitching. Add t light pink
(in Hz) at this bias condition. (in Hz) if the bias current is doubled. C in. 50k
Proble bipolar transistor is biased so that I 05, and at this bias and pf 2 F 75 0 a) Fd the frequency The transistor s low-frequency alue of is 00 It is also gien that ( Hz) at this bias condition 5pF
Design Guideline on 150W Power Supply for LED Street Lighting Design Using FL7930B and FAN7621S. Figure 1. Typical Application Circuit
www.fairchildsemi.cm A-978 Design Guideline n 5W Pwer Suly fr LED Street Lighting Design Using FL79B and FA76S ntrductin This alicatin nte describes a 5W rating design guideline fr LED street lighting.
DIGITALLY CONTROLLED QUADRATURE OSCILLATOR EMPLOYING TWO ZC-CG-CDBAs
DIGITALLY ONTOLLED QUADATUE OSILLATO EMPLOYING TWO Z-G-DBAs Josef Bajer, Dalibor Biolek UD/BUT, Det. of EE/Microelectronics Kounicova 65/Udolni 53, Brno, zech eublic dalibor.biolek@unob.cz ABSTAT: A simle
PreLab5 Temperature-Controlled Fan (Due Oct 16)
PreLab5 Temperature-Cntrlled Fan (Due Oct 16) GOAL The gal f Lab 5 is t demnstrate a temperature-cntrlled fan. INTRODUCTION The electrnic measurement f temperature has many applicatins. A temperature-cntrlled
EEE118: Electronic Devices and Circuits
EEE118: Electronic Devices and Circuits Lecture XI James E Green Department of Electronic Engineering University of Sheffield j.e.green@sheffield.ac.uk Review Review Introduced the idea of a dynamic resistance
MOSFET Common Source Amplifier
Microelectronic Circuits MOSFET Common Source Amplifier Slide 1 Small nal Model The definition of Transconductance g m i D S S S k n W L O The definition of output resistance r o DS I The definition of
Generating String Inputs Using Constrained Symbolic Execution
Generating String Inuts Using Cnstrained Symblic Executin Pieter Himeijer University f Virginia 1 The Prblem: SQL Injectin Mtivatin Mntage www.xkcd.cm 3 Mitre Cr. data rerted n htt://www.attritin.rg/ Mtivatin
FIELD EFFECT TRANSISTOR (FET) 1. JUNCTION FIELD EFFECT TRANSISTOR (JFET)
FIELD EFFECT TRANSISTOR (FET) The field-effect transistor (FET) is a three-terminal device used for a variety of applications that match, to a large extent, those of the BJT transistor. Although there
EDC UNIT IV- Transistor and FET Characteristics EDC Lesson 9- ", Raj Kamal, 1
EDC UNIT IV- Transistor and FET Characteristics Lesson-9: JFET and Construction of JFET 2008 EDC Lesson 9- ", Raj Kamal, 1 1. Transistor 2008 EDC Lesson 9- ", Raj Kamal, 2 Transistor Definition The transferred-resistance
Homework Assignment 06
Homework Assignment 06 Question 1 (Short Takes) One point each unless otherwise indicated. 1. Consider the current mirror below, and neglect base currents. What is? Answer: 2. In the current mirrors below,
Today s subject MOSFET and IGBT
Today s subject MOSFET and IGBT 2018-05-22 MOSFET metal oxide semiconductor field effect transistor Drain Gate n-channel Source p-channel The MOSFET - Source Gate G D n + p p n + S body body n - drift
Lecture 17. Small AC Signal Model of FET. Wednesday 6/12/2017 FET Small AC Signal Model 1-1
Lecture 17 Sall AC Signal Model of FET Wednesday 6/12/2017 FET Sall AC Signal Model 1-1 Outline Sall AC Signal Equivalent Circuits for FETs Aplifier Circuits Exaples Introduction to Power Electronics Power
FET(Field Effect Transistor)
Field Effect Transistor: Construction and Characteristic of JFETs. Transfer Characteristic. CS,CD,CG amplifier and analysis of CS amplifier MOSFET (Depletion and Enhancement) Type, Transfer Characteristic,