2N6071A/B Series. Silicon Bidirectional Thyristors TRIACS 4.0 A RMS, V
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1 Preferred Device Sensitive Gte Trics Silicon Bidirectionl Thyristors Designed primrily for full wve AC control pplictions, such s light dimmers, motor controls, heting controls nd power supplies; or wherever full wve silicon gte controlled solid stte devices re needed. Tric type thyristors switch from blocking to conducting stte for either polrity of pplied node voltge with positive or negtive gte triggering. Fetures Sensitive Gte Triggering Uniquely Comptible for Direct Coupling to TTL, HTL, CMOS nd Opertionl Amplifier Integrted Circuit Logic Functions Gte Triggering: 4 Mode 2N6071A, B; 2N6073A, B; 2N6075A, B Blocking Voltges to 600 V All Diffused nd Glss Pssivted Junctions for Greter Prmeter Uniformity nd Stbility Smll, Rugged, Thermopd Construction for Low Therml Resistnce, High Het Dissiption nd Durbility Device Mrking: Device Type, e.g., 2N6071A, Dte Code MT2 TRIACS A RMS, V G REAR VIEW SHOW TAB CASE 077 STYLE 5 MARKING DIAGRAM 1. Cthode 2. Anode 3. Gte YWW 2N 607xyG x = 1, 3, 5 y = A, B Y = Yer WW = Work Week G = PbFree Pckge ORDERING INFORMATION See detiled ordering nd shipping informtion in the pckge dimensions section on pge 7 of this dt sheet. Preferred devices re recommended choices for future use nd best overll vlue. *For dditionl informtion on our PbFree strtegy nd soldering detils, plese downlod the ON Semiconductor Soldering nd Mounting Techniques Reference Mnul, SOLDERRM/D. Semiconductor Components Industries, LLC, 2008 Mrch, 2008 Rev. 8 1 Publiction Order Number: 2N6071/D
2 MAXIMUM RATINGS (T J = 25 C unless otherwise noted) Rting Symbol Vlue Unit *Pek Repetitive Off Stte Voltge (Note 1) (T J = 40 to 110 C, Sine Wve, 50 to 60 Hz, Gte Open) 2N6071A,B 2N6073A,B 2N6075A,B V DRM, V RRM *On Stte RMS Current (T C = 85 C) Full Cycle Sine Wve 50 to 60 Hz I T(RMS) A *Pek Nonrepetitive Surge Current (One Full cycle, 60 Hz, T J = +110 C) I TSM 30 A Circuit Fusing Considertions (t = 8.3 ms) I 2 t 3.7 A 2 s *Pek Gte Power (Pulse Width s, T C = 85 C) P GM 10 W *Averge Gte Power (t = 8.3 ms, T C = 85 C) P G(AV) W *Pek Gte Voltge (Pulse Width s, T C = 85 C) V GM 5.0 V *Operting Junction Temperture Rnge T J 40 to +110 C *Storge Temperture Rnge T stg 40 to +150 C Mounting Torque (6 32 Screw) (Note 2) 8.0 in. lb. Stresses exceeding Mximum Rtings my dmge the device. Mximum Rtings re stress rtings only. Functionl opertion bove the Recommended Operting Conditions is not implied. Extended exposure to stresses bove the Recommended Operting Conditions my ffect device relibility. 1. V DRM nd V RRM for ll types cn be pplied on continuous bsis. Blocking voltges shll not be tested with constnt current source such tht the voltge rtings of the devices re exceeded. 2. Torque rting pplies with use of compression wsher. Mounting torque in excess of 6 in. lb. does not pprecibly lower cse to sink therml resistnce. Min terminl 2 nd hetsink contct pd re common. THERMAL CHARACTERISTICS Chrcteristic Symbol Mx Unit *Therml Resistnce, JunctiontoCse R JC 3.5 C/W Therml Resistnce, JunctiontoAmbient R JA 75 C/W Mximum Led Temperture for Soldering Purposes 1/8 from Cse for 10 Seconds T L 260 C *Indictes JEDEC Registered Dt. V 2
3 ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted; Electricls pply in both directions) Chrcteristic Symbol Min Typ Mx Unit OFF CHARACTERISTICS *Pek Repetitive Blocking Current (V D = V DRM = V RRM; Gte Open) T J = 25 C T J = 110 C I DRM, I RRM ON CHARACTERISTICS *Pek On Stte Voltge (Note 3) (I TM = 6.0 A Pek) V TM 2 V *Gte Trigger Voltge (Continuous DC), All Qudrnts (Min Terminl Voltge = 12 Vdc, R L = 100, T J = 40 C) Gte NonTrigger Voltge, All Qudrnts (Min Terminl Voltge = 12 Vdc, R L = 100, T J = 110 C) *Holding Current (Min Terminl Voltge = 12 Vdc, Gte Open, Inititing Current = 1 Adc) T J = 40 C T J = 25 C 10 2 V GT V GD 0.2 Turn On Time (I TM = 14 Adc, I GT = 100 dc) t gt 1.5 s I H QUADRANT (Mximum Vlue) A V V Gte Trigger Current (Continuous DC) (Min Terminl Voltge = 12 Vdc, R L = 100 ) DYNAMIC CHARACTERISTICS Criticl Rte of Rise of Commuttion V DRM, T J = 85 C, Gte Open, I TM = 5.7 A, Exponentil Wveform, Commutting di/dt = A/ms 3. Pulse Test: Pulse Width ms, Duty Cycle 2%. *Indictes JEDEC Registered Dt. Type I T J I 2N6071A 2N6073A 2N6075A 2N6071B 2N6073B 2N6075B II III IV +25 C C C C dv/dt(c) 5 V/ s SAMPLE APPLICATION: TTL SENSITIVE GATE 4 AMPERE TRIAC TRIGGERS IN MODES II AND III 14 0 V MC V EE 7 V EE = 5.0 V N6071A LOAD 115 VAC 60 Hz Trigger devices re recommended for gting on Trics. They provide: 1. Consistent predictble turn on points. 2. Simplified circuitry. 3. Fst turn on time for cooler, more efficient nd relible opertion. 3
4 Voltge Current Chrcteristic of Trics (Bidirectionl Device) + Current Symbol V DRM I DRM V RRM I RRM V TM I H Prmeter Pek Repetitive Forwrd Off Stte Voltge Pek Forwrd Blocking Current Pek Repetitive Reverse Off Stte Voltge Pek Reverse Blocking Current Mximum On Stte Voltge Holding Current I RRM t V RRM on stte I H I H V TM off stte Qudrnt 1 MinTerminl Voltge I DRM t V DRM Qudrnt 3 MinTerminl 2 V TM Qudrnt Definitions for Tric MT2 POSITIVE (Positive Hlf Cycle) + (+) MT2 (+) MT2 Qudrnt II () I GT GATE (+) I GT GATE Qudrnt I REF REF I GT + I GT () MT2 () MT2 Qudrnt III () I GT GATE (+) I GT GATE Qudrnt IV REF REF MT2 NEGATIVE (Negtive Hlf Cycle) All polrities re referenced to. With inphse signls (using stndrd AC lines) qudrnts I nd III re used. SENSITIVE GATE LOGIC REFERENCE Firing Qudrnt IC Logic Functions I II III IV TTL 2N6071A Series 2N6071A Series HTL 2N6071A Series 2N6071A Series CMOS (NAND) 2N6071B Series 2N6071B Series CMOS (Buffer) 2N6071B Series 2N6071B Series Opertionl Amplifier 2N6071A Series 2N6071A Series Zero Voltge Switch 2N6071A Series 2N6071A Series 4
5 T C, CASE TEMPERATURE ( C) α α = dc T C, CASE TEMPERATURE ( C) α = dc 90 α = CONDUCTION ANGLE 70 0 I T(AV), AVERAGE ON STATE CURRENT (AMP) α = CONDUCTION ANGLE 70 0 I T(RMS), RMS ON STATE CURRENT (AMP) Figure 1. Averge Current Derting Figure 2. RMS Current Derting P (AV), AVERAGE POWER (WATTS) α = CONDUCTION ANGLE α = dc P (AV), AVERAGE POWER (WATTS) α = CONDUCTION ANGLE 120 α = dc I T(AV), AVERAGE ON STATE CURRENT (AMP) Figure 3. Power Dissiption I T(RMS), RMS ON STATE CURRENT (AMP) Figure 4. Power Dissiption, GATE TRIGGER VOLTAGE (NORMALIZED) VGT OFF STATE VOLTAGE = 12 Vdc ALL MODES T J, JUNCTION TEMPERATURE ( C) 100 Figure 5. Typicl GteTrigger Voltge , GATE TRIGGER CURRENT (NORMALIZED) IGT 0.7 OFF STATE VOLTAGE = 12 Vdc ALL MODES T J, JUNCTION TEMPERATURE ( C) Figure 6. Typicl GteTrigger Current 5
6 ITM, ON STATE CURRENT (AMP) T J = 110 C T J = 25 C IH, HOLDING CURRENT (NORMALIZED) T J, JUNCTION TEMPERATURE ( C) GATE OPEN APPLIES TO EITHER DIRECTION Figure 8. Typicl Holding Current V TM, ON STATE VOLTAGE (VOLTS) PEAK SINE WAVE CURRENT (AMP) T J = 40 to +110 C f = 60 Hz NUMBER OF FULL CYCLES Figure 7. Mximum OnStte Chrcteristics Figure 9. Mximum Allowble Surge Current ZθJC(t), TRANSIENT THERMAL IMPEDANCE ( C/W) MAXIMUM TYPICAL k k 5.0 k 10 k t, TIME (ms) Figure 10. Therml Response 6
7 ORDERING INFORMATION 2N6071A 2N6071AG Device Pckge Shipping (PbFree) 500 Units / Box 2N6071AT 50 Units / Tube 2000 Units / Box 2N6071ATG 2N6071B 2N6071BG (PbFree) (PbFree) 50 Units / Tube 2000 Units / Box 500 Units / Box 2N6071BT 50 Units / Tube 2000 Units / Box 2N6071BTG 2N6073A 2N6073AG 2N6073B 2N6073BG 2N6075A 2N6075AG (PbFree) (PbFree) (PbFree) (PbFree) 50 Units / Tube 2000 Units / Box 500 Units / Box 2N6075B 2N6075BG (PbFree) For informtion on tpe nd reel specifictions, including prt orienttion nd tpe sizes, plese refer to our Tpe nd Reel Pckging Specifictions Brochure, BRD8011/D. 7
8 PACKAGE DIMENSIONS H Q F B U A K V G S D 2 PL M C J R 0.25 (0.010) M A M B M 0.25 (0.010) M A M B M CASE 7709 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH THRU 08 OBSOLETE, NEW STANDARD INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G BSC 2.39 BSC H J K M 5 TYP 5 TYP Q R S U V STYLE 5: PIN 1. MT 1 2. MT 2 3. GATE ON Semiconductor nd re registered trdemrks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to mke chnges without further notice to ny products herein. SCILLC mkes no wrrnty, representtion or gurntee regrding the suitbility of its products for ny prticulr purpose, nor does SCILLC ssume ny libility rising out of the ppliction or use of ny product or circuit, nd specificlly disclims ny nd ll libility, including without limittion specil, consequentil or incidentl dmges. Typicl prmeters which my be provided in SCILLC dt sheets nd/or specifictions cn nd do vry in different pplictions nd ctul performnce my vry over time. All operting prmeters, including Typicls must be vlidted for ech customer ppliction by customer's technicl experts. SCILLC does not convey ny license under its ptent rights nor the rights of others. SCILLC products re not designed, intended, or uthorized for use s components in systems intended for surgicl implnt into the body, or other pplictions intended to support or sustin life, or for ny other ppliction in which the filure of the SCILLC product could crete sitution where personl injury or deth my occur. Should Buyer purchse or use SCILLC products for ny such unintended or unuthorized ppliction, Buyer shll indemnify nd hold SCILLC nd its officers, employees, subsidiries, ffilites, nd distributors hrmless ginst ll clims, costs, dmges, nd expenses, nd resonble ttorney fees rising out of, directly or indirectly, ny clim of personl injury or deth ssocited with such unintended or unuthorized use, even if such clim lleges tht SCILLC ws negligent regrding the design or mnufcture of the prt. SCILLC is n Equl Opportunity/Affirmtive Action Employer. This literture is subject to ll pplicble copyright lws nd is not for resle in ny mnner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literture Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colordo USA Phone: or Toll Free USA/Cnd Fx: or Toll Free USA/Cnd Emil: orderlit@onsemi.com N. Americn Technicl Support: Toll Free USA/Cnd Europe, Middle Est nd Afric Technicl Support: Phone: Jpn Customer Focus Center Phone: ON Semiconductor Website: Order Literture: For dditionl informtion, plese contct your locl Sles Representtive 2N6071/D
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Power MOSFET V,, Single N Channel, Features Low Package Inductance Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
More informationMCR8NG. Thyristors. Surface Mount 600V - 800V > MCR8NG. Description
Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled devices are needed.
More informationMBR2045EMFST3G NRVB2045EMFST3G. Switch-mode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 45 VOLTS
MBR045EMFS, NRVB045EMFS Switch-mode Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides Capability of Inspection
More information2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
More informationMBR2045CT, MBRF2045CT. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS
SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175 C Operating Junction Temperature 2 A Total ( A Per Diode Leg) PbFree Package
More informationMBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS
MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*
More informationMJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS
MJD (NPN) MJD (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features
More informationNB100LVEP V / 3.3V ECL DUAL Differential 2:1 Multiplexer
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More information2N6400. Thyristors. Surface Mount V > 2N6400. Description
2N6400 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
More informationMAC210A8, MAC210A10. Thyristors. Surface Mount 400V - 800V > MAC210A8, MAC210A10. Description
MAC210A8, MAC210A10 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full wave silicon gate
More informationMBR3045. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS
MBR5 SWITCHMODE Power Rectifier Features and Benefits Dual Diode Construction Terminals 1 and May Be Connected for Parallel Operation at Full Rating 5 Blocking oltage Total (15 Per Diode Leg) Low Forward
More information2N6344. Thyristors. Surface Mount V > 2N6344. Description
2N6344 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled
More informationMJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
More informationMAC12HCDG, MAC12HCMG, MAC12HCNG
MAC2HCDG, MAC2HCMG, MAC2HCNG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full wave, silicon gate controlled
More informationMJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
More informationMARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
More informationBTA16-600CW3G, BTA16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTA6-600CW3G, BTA6-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance fullwave ac control applications where high noise immunity and high commutating di/dt are required. Features
More informationNJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS
NJD287TG, NJVNJD287TG Power Transistors NPN Silicon For Surface Mount pplications Designed for highgain audio amplifier applications. Features High DC Current Gain Low CollectorEmitter Saturation Voltage
More informationReverse Blocking Thyristors
Preferred Device Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Glass Passivated Junctions
More informationMAC4DCM, MAC4DCN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
More informationMAC8DG, MAC8MG, MAC8NG
MAC8DG, MAC8MG, MAC8NG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
More informationT2322B. Thyristors Surface Mount 200V > T2322B TO 225AA CASE 77 STYLE 2. Description
T2322B Pb Description Designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances
More informationBYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
More informationMJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications
MJD34, NJMJD34T4G (NPN), MJD3, NJMJD3T4G (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching
More information2N6394. Thyristors. Surface Mount V > 2N6394. Description
2N6394 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features Glass Passivated Junctions for Greater Parameter Uniformity
More informationMCR72-3, MCR72-6, MCR72-8. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS 100 thru 600 VOLTS
MCR72-3, MCR72-6, MCR72-8 Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process
More informationMAC08BT1, MAC08MT1. Thyristors. Surface Mount 200V - 600V > MAC08BT1, MAC08MT1. Description
MAC08BT1, MAC08 Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Sensitive
More informationC122F1G. Thyristors. Surface Mount 50V > C122F1G. Description
Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
More informationMBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
More informationMAC4DSM, MAC4DSN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
More informationMC4DCM, MAC4DCN. Thyristors. Surface Mount 600V - 800V > MC4DCM, MAC4DCN. Description
MCDCM, MACDCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Surface
More information2N6504 Series. Thyristors. Surface Mount V > 2N6504 Series. Description
2N6504 Series Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Glass Passivated Junctions for
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MAC6DG, MAC6MG, MAC6NG Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800
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Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
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Preferred Devices Product Preview Thyristor Surge Protectors High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning,
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More informationMARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
More informationBTB08-600BW3G, BTB08-800BW3G
BTB08-600BW3G, BTB08-800BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
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MJ293 - PNP MJ294 - NPN Silicon Power Transistors The MJ293 (PNP) and MJ294 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
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MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
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Thyristor High Voltage, Phase Control SCR, 40 TO-247C 2 () (K) (G) 3 PRIMRY CHRCTERISTICS I T(V) 35 V DRM /V RRM 800 V, 200 V V TM.45 V I GT 50 m T J -40 C to +25 C Package TO-247C Circuit configuration
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MURA5T3G, MURAT3G, SURA8T3G Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
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BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
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MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
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Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features High DC Current Gain h FE =
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MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
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