2N6071A/B Series. Sensitive Gate Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 A RMS, V

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1 Preferred Device Sensitive Gte Trics Silicon Bidirectionl Thyristors Designed primrily for full-wve AC control pplictions, such s light dimmers, motor controls, heting controls nd power supplies; or wherever full-wve silicon gte controlled solid-stte devices re needed. Tric type thyristors switch from blocking to conducting stte for either polrity of pplied node voltge with positive or negtive gte triggering. Fetures PbFree Pckge is Avilble* Sensitive Gte Triggering Uniquely Comptible for Direct Coupling to TTL, HTL, CMOS nd Opertionl Amplifier Integrted Circuit Logic Functions Gte Triggering: 4 Mode 2N6071A, B; 2N6073A, B; 2N6075A, B Blocking Voltges to 600 V All Diffused nd Glss Pssivted Junctions for Greter Prmeter Uniformity nd Stbility Smll, Rugged, Thermopd Construction for Low Therml Resistnce, High Het Dissiption nd Durbility Device Mrking: Device Type, e.g., 2N6071A, Dte Code TRIACS A RMS, V 3 2 MT2 1 G TO225 CASE 077 STYLE 5 REAR VIEW SHOW TAB MARKING DIAGRAM MT2 3. Gte YWW 2N 60xy x = 1, 3, 5 y = A, B Y = Yer WW = Work Week ORDERING INFORMATION See detiled ordering nd shipping informtion in the pckge dimensions section on pge 2 of this dt sheet. Preferred devices re recommended choices for future use nd best overll vlue. *For dditionl informtion on our PbFree strtegy nd soldering detils, plese downlod the ON Semiconductor Soldering nd Mounting Techniques Reference Mnul, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 September, 2004 Rev. 5 1 Publiction Order Number: 2N6071/D

2 MAXIMUM RATINGS (T J = 25 C unless otherwise noted) Rting Symbol Vlue Unit *Pek Repetitive Off-Stte Voltge (Note 1) (T J = 40 to 110 C, Sine Wve, 50 to 60 Hz, Gte Open) 2N6071A,B 2N6073A,B 2N6075A,B V DRM, V RRM *On-Stte RMS Current (T C = 85 C) Full Cycle Sine Wve 50 to 60 Hz I T(RMS) A *Pek Nonrepetitive Surge Current (One Full cycle, 60 Hz, T J = +110 C) I TSM 30 A Circuit Fusing Considertions (t = 8.3 ms) I 2 t 3.7 A 2 s *Pek Gte Power (Pulse Width s, T C = 85 C) P GM 10 W *Averge Gte Power (t = 8.3 ms, T C = 85 C) P G(AV) W *Pek Gte Voltge (Pulse Width s, T C = 85 C) V GM 5.0 V *Operting Junction Temperture Rnge T J 40 to +110 C *Storge Temperture Rnge T stg 40 to +150 C Mounting Torque (6-32 Screw) (Note 2) 8.0 in. lb. Mximum rtings re those vlues beyond which device dmge cn occur. Mximum rtings pplied to the device re individul stress limit vlues (not norml operting conditions) nd re not vlid simultneously. If these limits re exceeded, device functionl opertion is not implied, dmge my occur nd relibility my be ffected. 1. V DRM nd V RRM for ll types cn be pplied on continuous bsis. Blocking voltges shll not be tested with constnt current source such tht the voltge rtings of the devices re exceeded. 2. Torque rting pplies with use of compression wsher. Mounting torque in excess of 6 in. lb. does not pprecibly lower cse-to-sink therml resistnce. Min terminl 2 nd hetsink contct pd re common. THERMAL CHARACTERISTICS Chrcteristic Symbol Mx Unit *Therml Resistnce, JunctiontoCse R JC 3.5 C/W Therml Resistnce, JunctiontoAmbient R JA 75 C/W Mximum Led Temperture for Soldering Purposes 1/8 from Cse for 10 Seconds T L 260 C *Indictes JEDEC Registered Dt. V ORDERING INFORMATION Device Pckge Shipping 2N6071A TO Units / Box 2N6071B TO Units / Box 2N6071BG TO225 (PbFree) 500 Units / Box 2N6071BT TO Units / Ril 2N6073A TO Units / Box 2N6073B TO Units / Box 2N6075A TO Units / Box 2N6075B TO Units / Box For informtion on tpe nd reel specifictions, including prt orienttion nd tpe sizes, plese refer to our Tpe nd Reel Pckging Specifictions Brochure, BRD8011/D. 2

3 ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted; Electricls pply in both directions) Chrcteristic Symbol Min Typ Mx Unit OFF CHARACTERISTICS *Pek Repetitive Blocking Current (V D = Rted V DRM, V RRM; Gte Open) T J = 25 C T J = 110 C ON CHARACTERISTICS *Pek On-Stte Voltge (Note 3) (I TM = 6.0 A Pek) V TM 2 V *Gte Trigger Voltge (Continuous DC), All Qudrnts (Min Terminl Voltge = 12 Vdc, R L = 100, T J = 40 C) Gte NonTrigger Voltge, All Qudrnts (Min Terminl Voltge = 12 Vdc, R L = 100, T J = 110 C) *Holding Current (Min Terminl Voltge = 12 Vdc, Gte Open, Inititing Current = 1 Adc) T J = 40 C T J = 25 C I DRM, I RRM 10 2 V GT V GD 0.2 Turn-On Time (I TM = 14 Adc, I GT = 100 dc) t gt 1.5 s I H QUADRANT (Mximum Vlue) A V V Gte Trigger Current (Continuous DC) (Min Terminl Voltge = 12 Vdc, R L = 100 ) DYNAMIC CHARACTERISTICS Criticl Rte of Rise of Commuttion V DRM, T J = 85 C, Gte Open, I TM = 5.7 A, Exponentil Wveform, Commutting di/dt = A/ms 3. Pulse Test: Pulse Width ms, Duty Cycle 2%. *Indictes JEDEC Registered Dt. Type I T J I II III IV 2N6071A +25 C N6073A 2N6075A 40 C N6071B +25 C N6073B 2N6075B 40 C dv/dt(c) 5 V/ s SAMPLE APPLICATION: TTL-SENSITIVE GATE 4 AMPERE TRIAC TRIGGERS IN MODES II AND III 0 V V EE 14 MC V EE = 5.0 V N6071A LOAD 115 VAC 60 Hz Trigger devices re recommended for gting on Trics. They provide: 1. Consistent predictble turn-on points. 2. Simplified circuitry. 3. Fst turn-on time for cooler, more efficient nd relible opertion. 3

4 Voltge Current Chrcteristic of Trics (Bidirectionl Device) + Current Symbol V DRM I DRM V RRM I RRM V TM I H Prmeter Pek Repetitive Forwrd Off Stte Voltge Pek Forwrd Blocking Current Pek Repetitive Reverse Off Stte Voltge Pek Reverse Blocking Current Mximum On Stte Voltge Holding Current I RRM t V RRM on stte I H I H V TM off stte Qudrnt 1 MinTerminl Voltge I DRM t V DRM Qudrnt 3 MinTerminl 2 V TM Qudrnt Definitions for Tric MT2 POSITIVE (Positive Hlf Cycle) + (+) MT2 (+) MT2 Qudrnt II () I GT GATE (+) I GT GATE Qudrnt I REF REF I GT + I GT () MT2 () MT2 Qudrnt III () I GT GATE (+) I GT GATE Qudrnt IV REF REF MT2 NEGATIVE (Negtive Hlf Cycle) All polrities re referenced to. With inphse signls (using stndrd AC lines) qudrnts I nd III re used. SENSITIVE GATE LOGIC REFERENCE Firing Qudrnt IC Logic Functions I II III IV TTL 2N6071A Series 2N6071A Series HTL 2N6071A Series 2N6071A Series CMOS (NAND) 2N6071B Series 2N6071B Series CMOS (Buffer) 2N6071B Series 2N6071B Series Opertionl Amplifier 2N6071A Series 2N6071A Series Zero Voltge Switch 2N6071A Series 2N6071A Series 4

5 T C, CASE TEMPERATURE ( C) α α = dc T C, CASE TEMPERATURE ( C) α = dc 90 α = CONDUCTION ANGLE 70 0 I T(AV), AVERAGE ON-STATE CURRENT (AMP) α = CONDUCTION ANGLE 70 0 I T(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. Averge Current Derting Figure 2. RMS Current Derting P (AV), AVERAGE POWER (WATTS) α = CONDUCTION ANGLE α = dc P (AV), AVERAGE POWER (WATTS) α = CONDUCTION ANGLE 120 α = dc I T(AV), AVERAGE ON-STATE CURRENT (AMP) Figure 3. Power Dissiption I T(RMS), RMS ON-STATE CURRENT (AMP) Figure 4. Power Dissiption, GATE TRIGGER VOLTAGE (NORMALIZED) VGT OFF-STATE VOLTAGE = 12 Vdc ALL MODES T J, JUNCTION TEMPERATURE ( C) 100 Figure 5. Typicl GteTrigger Voltge , GATE TRIGGER CURRENT (NORMALIZED) IGT 0.7 OFF-STATE VOLTAGE = 12 Vdc ALL MODES T J, JUNCTION TEMPERATURE ( C) Figure 6. Typicl GteTrigger Current 5

6 ITM, ON-STATE CURRENT (AMP) T J = 110 C T J = 25 C IH, HOLDING CURRENT (NORMALIZED) T J, JUNCTION TEMPERATURE ( C) GATE OPEN APPLIES TO EITHER DIRECTION Figure 8. Typicl Holding Current V TM, ON-STATE VOLTAGE (VOLTS) PEAK SINE WAVE CURRENT (AMP) T J = 40 to +110 C f = 60 Hz NUMBER OF FULL CYCLES Figure 7. Mximum OnStte Chrcteristics Figure 9. Mximum Allowble Surge Current ZθJC(t), TRANSIENT THERMAL IMPEDANCE ( C/W) MAXIMUM TYPICAL k k 5.0 k 10 k t, TIME (ms) Figure 10. Therml Response 6

7 PACKAGE DIMENSIONS TO225 CASE 7709 ISSUE Z H Q B U F A K V G S D 2 PL M C J R 0.25 (0.010) M A M B M 0.25 (0.010) M A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH THRU 08 OBSOLETE, NEW STANDARD INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G BSC 2.39 BSC H J K M 5 TYP 5 TYP Q R S U V STYLE 5: PIN 1. MT 1 2. MT 2 3. GATE 7

8 ON Semiconductor nd re registered trdemrks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to mke chnges without further notice to ny products herein. SCILLC mkes no wrrnty, representtion or gurntee regrding the suitbility of its products for ny prticulr purpose, nor does SCILLC ssume ny libility rising out of the ppliction or use of ny product or circuit, nd specificlly disclims ny nd ll libility, including without limittion specil, consequentil or incidentl dmges. Typicl prmeters which my be provided in SCILLC dt sheets nd/or specifictions cn nd do vry in different pplictions nd ctul performnce my vry over time. All operting prmeters, including Typicls must be vlidted for ech customer ppliction by customer s technicl experts. SCILLC does not convey ny license under its ptent rights nor the rights of others. SCILLC products re not designed, intended, or uthorized for use s components in systems intended for surgicl implnt into the body, or other pplictions intended to support or sustin life, or for ny other ppliction in which the filure of the SCILLC product could crete sitution where personl injury or deth my occur. Should Buyer purchse or use SCILLC products for ny such unintended or unuthorized ppliction, Buyer shll indemnify nd hold SCILLC nd its officers, employees, subsidiries, ffilites, nd distributors hrmless ginst ll clims, costs, dmges, nd expenses, nd resonble ttorney fees rising out of, directly or indirectly, ny clim of personl injury or deth ssocited with such unintended or unuthorized use, even if such clim lleges tht SCILLC ws negligent regrding the design or mnufcture of the prt. SCILLC is n Equl Opportunity/Affirmtive Action Employer. This literture is subject to ll pplicble copyright lws nd is not for resle in ny mnner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literture Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizon USA Phone: or Toll Free USA/Cnd Fx: or Toll Free USA/Cnd Emil: N. Americn Technicl Support: Toll Free USA/Cnd Jpn: ON Semiconductor, Jpn Customer Focus Center 291 Kmimeguro, Meguroku, Tokyo, Jpn Phone: ON Semiconductor Website: Order Literture: For dditionl informtion, plese contct your locl Sles Representtive. 2N6071/D

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