Organic RFID tags for MHz
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1 Organic RFID tags for MHz Kris Myny, Soeren Steudel, Dieter Bode, Sarah Schols, Paul Heremans N.A.J.M. van Aerle (Polymer Vision) Gerwin Gelinck (TNO)
2 Results of the R&D technology program Organic circuits an R&D program between IMEC, TNO and industrial partners Plastic Electronics Foundation 2008, 28 October
3 Passive RF communication tag Antenna Load modulation Rectifier Logic Code Plastic Electronics Foundation 2008, 28 October
4 Communication frequency Low Frequency High Frequency Ultra-High Frequency Frequency (MHz) Wavelength Plastic Electronics Foundation 2008, 28 October
![Ref[1] ) UHF-Antenna (869 MHz) manufactured by thin film technology (<10µm): printing or](/docs-images/75/72577639/images/5-2.jpg "in-line lift-off process passive RFID tag can be powered over longer distance with UHF (up to")
5 Antenna for RFID tag HF-Antenna (13.56MHz) manufactured by thick film technology (up to 100µm): etching;electro-plating, (printing Ref[1] ) UHF-Antenna (869 MHz) manufactured by thin film technology (<10µm): printing or in-line lift-off process passive RFID tag can be powered over longer distance with UHF (up to 10m) as compared to HF (~1m) Absorption of EM-field by fluids bigger problem at UHF than for HF UHF antenna is cheaper than HF antenna thanks to lower conductivity requirements Ref[1] Plastic Electronics Foundation 2008, 28 October
6 Plastic RFID tag Antenna Rectifier Load modulation Logic Code Rectifies MHz or 869 (915) MHz base carrier frequency Generates V DD of the logic Plastic Electronics Foundation 2008, 28 October
7 Organic Vertical Diode Al pentacene Au SiO 2 /Si Steudel et al, Nature Materials 4, 597 (2005) Plastic Electronics Foundation 2008, 28 October
8 From diode to rectifier V V AC V DC t Plastic Electronics Foundation 2008, 28 October
![First UHF rectification with diode on glass V DC [V] 16 14 12 10 8 On glass HF vertical diode µ~0.15cm 2 /Vs, V F ~3.5V, d=160nm transistor diode µ~0.8cm 2 /Vs, V T ~2.](/docs-images/75/72577639/images/9-1.jpg "4V L=3µm, L overlap =6µm Pentacene diode μ ~ 0.15 cm 2 /Vs V F ~3.5 V d = 160 nm V AC V 15V 10.")
9 First UHF rectification with diode on glass V DC [V] On glass HF vertical diode µ~0.15cm 2 /Vs, V F ~3.5V, d=160nm transistor diode µ~0.8cm 2 /Vs, V T ~2.4V L=3µm, L overlap =6µm Pentacene diode μ ~ 0.15 cm 2 /Vs V F ~3.5 V d = 160 nm V AC V 15V 10.5V V DC t V AC =15V R L = 50kΩ, C L =100nF UHF maximum frequency [Hz] Steudel et al., Journal of Applied Physics 99, (2006) Plastic Electronics Foundation 2008, 28 October
![First UHF integrated rectifiers on flex V DC [V] 14 12 10 8 6 4 2 0 single diode on glass integrated rectifier on PEN 13.56MHz V AC = 15V 13.](/docs-images/75/72577639/images/10-1.jpg "56MHz μ=10-1 cm 2 /Vs 10-2 cm 2 /Vs 10-3 cm 2 /Vs 433MHz 10 6 10 7 10 8 10 9 maximum frequency [Hz] µ~10-1 cm 2 /Vs µ~10-2 cm 2 /Vs µ~10-3 cm 2 /Vs 433MHz869MHz 869MHz Al Au Pentacene capacitance")
10 First UHF integrated rectifiers on flex V DC [V] single diode on glass integrated rectifier on PEN 13.56MHz V AC = 15V 13.56MHz μ=10-1 cm 2 /Vs 10-2 cm 2 /Vs 10-3 cm 2 /Vs 433MHz maximum frequency [Hz] µ~10-1 cm 2 /Vs µ~10-2 cm 2 /Vs µ~10-3 cm 2 /Vs 433MHz869MHz 869MHz Al Au Pentacene capacitance diode encapsulation contact pads Parylene PEN-foil 5 V at 433 MHz Plastic Electronics Foundation 2008, 28 October
11 Results at higher frequencies We improved the response of the rectifiers further for higher frequencies For details, see S. Steudel, K. Myny, P. Vicca, D. Cheyns, J. Genoe and P. Heremans, Ultra-High Frequency Rectification Using Organic Diodes, accepted for IEDM 2008, session 4, 3.40 pm, December 15, 2008, San Francisco Hilton Plastic Electronics Foundation 2008, 28 October
12 Double half-wave rectifier (DHWR) K. Myny et al, Appl. Phys. Lett. 93, (2008) Plastic Electronics Foundation 2008, 28 October
13 Voltage generated at MHz using DHWR Silicon diodes Pentacene diodes Is Is this this voltage sufficient to to empower the the code code logic? logic? Plastic Electronics Foundation 2008, 28 October
14 8b transponder chip 211 transistors Only inverters and NAND-gates Critical time path is data flow through MUX K. Myny et al, ISSCC 2008 Plastic Electronics Foundation 2008, 28 October
15 8b transponder chip Code generator performance when implemented in the Polymer Vision process 10 Vout [V] Data rate 589 b/s V DD 10 V K. Myny et al, ISSCC 2008 Time [ms] Plastic Electronics Foundation 2008, 28 October
16 64b transponder chip 414 transistors Only inverters and NAND-gates K. Myny et al, ISSCC 2008 Plastic Electronics Foundation 2008, 28 October
17 64b transponder chip Code generator performance when implemented in the Polymer Vision process Vout [V] K. Myny et al, ISSCC Data rate 752 b/s V DD 14 V 60 Time [ms] Plastic Electronics Foundation 2008, 28 October
18 Data rate versus power supply 1000 Data rate [b/s] Data rate [b/s] b 64b 16b 8b Vdd [V] 20 Vdd [V] K. Myny et al, ISSCC 2008 Plastic Electronics Foundation 2008, 28 October
19 Data rate versus power supply 1000 Data rate [b/s] [3] [1] [5] [2] [4] 6b-8b code generators [1] K. Myny et al., ISSCC 2008 [2] E. Cantatore et al., ISSCC b code generators [3] K. Myny et al., ISSCC 2008 [4] E. Cantatore et al., ISSCC [5] W. Fix, OEC07 Vdd [V] K. Myny et al, ISSCC 2008 Plastic Electronics Foundation 2008, 28 October
20 64b transponder chip Load modulator 5 mm K. Myny et al, ISSCC b transponder Plastic Electronics Foundation 2008, 28 October
21 6 flexible wafer Plastic Electronics Foundation 2008, 28 October
22 Signal at the reader Modulation depth h = 1.4% 64b modulation Complete tag 0.5 Reader signal [V] Data rate 787 b/s Rectified V DD 14 V K. Myny et al, ISSCC 2008 Time [ms] Plastic Electronics Foundation 2008, 28 October
23 Reader field to operate, 8b tag Required field from the reader [A/m] Reader antenna R= 7.5 cm R= 55 cm Tag distance [cm] Required tag tag field field to to operate A/m A/m Plastic Electronics Foundation 2008, 28 October
24 8b DC modulation Signal at the reader Distance to the reader varies Complete tag 0.5 Reader signal [V] Distance 10 cm Field 6.8 A/m Rectified V DD 14.3 V Distance 5 cm Field 2.15 A/m Rectified V DD 10 V Time [ms] Plastic Electronics Foundation 2008, 28 October
25 Can complexity go beyond 64 bit code generators? 96 bit and 128 bit Anti-collision protocol (ALOHA) Double data rates Manchester encoding For details, see K. Myny, M. J. Beenhakkers, N. A. J. M. van Aerle, G. H. Gelinck, J. Genoe, W. Dehaene, and P. Heremans, A 128 bit organic RFID transponder chip, including Manchester encoding and ALOHA anti-collision protocol, operating with a data rate of 1529b/s, accepted for ISSCC 2009, San Francisco Plastic Electronics Foundation 2008, 28 October
26 Reduce power and increase reading distance En route to low-voltage circuits Cfr. H. Klauk et al. Nature 445, (2007) High-k gate dielectrics Small channel lengths I DS = 1 2 W L ε d μ t d ( V V ) 2 GS T Complementary logic Plastic Electronics Foundation 2008, 28 October
![0 Vout [V] 6 5 4 3 2 V DD = 7 6 Vout_2V Vout_3V Vout_4V](/docs-images/75/72577639/images/27-2.jpg "Vout_5V 5 Vout_6V Vout_7V 4 3 2 Vout [V] 1.5 1.0 0.")
27 High-k dielectric enables low-voltage RO 19 stage ring oscillator pentacene 20nm Au AlOx (100nm) Glass Au Vout [V] V DD = 7 6 Vout_2V Vout_3V Vout_4V Vout_5V 5 Vout_6V Vout_7V Vout [V] V DD =2V f=315 Hz VDD: 2V Freq ~ 315 Hz Time [ms] Time [ms] Plastic Electronics Foundation 2008, 28 October
28 Complementary logic PMOS CMOS De Vusser et al., IEEE T. Electron. Dev., 2006, 53, 601 CMOS will buy you: High gain (2 driver transistors) rail-to-rail i.e. low state and high state are 0 and VDD Improved noise margin Plastic Electronics Foundation 2008, 28 October
![Complementary organic technology V DD = 2 V Gain = 14 NM = 0.65 V Swing = 1.96 V N-type OTFT 2.0 1.5 14 12 10 P-type OTFT V out [V] 1.](/docs-images/75/72577639/images/29-1.jpg "0 8 6 Gain 0.5 4 100 μm S. De Vusser et al, ISSCC 2006 0.0 0.0 0.5 1.0 V in [V] 1.5 2 0 2.")
29 Complementary organic technology V DD = 2 V Gain = 14 NM = 0.65 V Swing = 1.96 V N-type OTFT P-type OTFT V out [V] Gain μm S. De Vusser et al, ISSCC V in [V] Plastic Electronics Foundation 2008, 28 October
30 Complementary invertor characteristics V DD =20V V DD =15V V DD =10V V trip =8.6V V DD /2 V DD =5V V trip =6.5V V DD /2 V trip =4.3V V DD /2 V trip =2.3V V DD /2 D. Bode et al, ICOE June 2008 Plastic Electronics Foundation 2008, 28 October
31 Complementary invertor characteristics D. Bode et al, ICOE June 2008 Plastic Electronics Foundation 2008, 28 October
32 Implementation challenges CMOS How to integrate n- and p-type semiconductors on one substrate? How to integrate n- and p-type processes on one substrate? Dielectric surface Contacts Stability of the n-type organic semiconductor Plastic Electronics Foundation 2008, 28 October
33 Improved n-type materials E 2 LUMO = 2.9 ev LUMO = 3.4 ev Work function of metals Ca: 2.9 ev 3 LUMO = 4 ev 4 5 HOMO = 5.1 ev HOMO = 5.4 ev Au: 5.1 ev 6 HOMO = 6.3 ev DFHCO-4T Pentacene PTCDI-C13 Yoon et al., JACS 127, 1348, 2005 Plastic Electronics Foundation 2008, 28 October
34 Improved n-type material: DFHCO-4T Au top contacts μ=2.1 cm 2 /Vs Plastic Electronics Foundation 2008, 28 October
35 Conclusions Integrated UHF rectifiers on foil deliver 5 V at 433 MHz Double half-wave rectifiers deliver double the voltage of single-diode rectifiers at MHz Plastic RFID applications will require low-voltage circuits Complementary logic is a route towards lowvoltage (5 V) Plastic Electronics Foundation 2008, 28 October
36 PRODI design workshop Bridging the gap between design and R2R technology Speakers: Prof. Eugenio Cantatore Mike Hambsch Kris Myny Dieter Bode Prof. Bill Eccleston Followed by a Panel discussion on design issues IMEC, November 24, 2008 Plastic Electronics Foundation 2008, 28 October
37 Acknowledgements European Commission for funding through the FP6 integrated project Polyapply IST No IWT for grant of Dieter Bode FWO for grant of Sarah Schols Plastic Electronics Foundation 2008, 28 October
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