Practical Information

Transcription

1 EE241 - Spring 2013 Advanced Digital Integrated Circuits MW 2-3:30pm 540A/B Cory Practical Information Instructor: Borivoje Nikolić 509 Cory Hall, , bora@eecs Office hours: M 11-12, W 3:30pm-4:30pm GSI: Brian Zimmer bmzimmer@eecs Admin: Lea Barker Just for graded work pickup Class Discussion Sign up for Piazza! Class Web page 2 1

2 Class Topics This course aims to convey a knowledge of advanced concepts of digital circuit and system design in state-ofthe-art MOS technologies. Emphasis is on the circuit and chip design and optimization for both high performance, and low power for use in applications such as microprocessors, signal and multimedia processors, communications, memory and periphery. Special attention will be devoted to the most important challenges facing digital circuit designers today and in the coming decade, being the impact of scaling, deep sub-micron effects, variability, power dissipation and timing. 3 EECS141 vs. EECS241 EECS 141: Basic transistor and circuit models Basic circuit design styles First experiences with design creating a solution given a set of specifications EECS 241: Transistor models of varying accuracy Design under constraints: power-constrained, flexible, robust, Learning more advanced techniques Study the challenges facing design in the coming years Creating new solutions to challenging design problems 4 2

3 EECS141 vs. EECS241 EECS m and 90nm CMOS Unified transistor model Basic circuit design techniques Well defined design project Cadence/Hspice Focus on principles EECS241 Mostly 32/28nm CMOS Different models Advanced circuit techniques Open design/research project Any tool that does the job Focus on principles 5 Special Focus in Spring 2013 Current technology issues Process variations Robust design SRAM Power and performance optimization Timing Clocking and power distribution 6 3

4 Class Topics Fundamentals - Technology and modeling Scaling and its limits (1.5 wks) Technology features, transistor models (1.5wks) Delays and timing (1wk) Technology variability (2 wks) Sources of variability, modeling, impact on logic SRAM in scaled technologies Timing. latches and variability-aware design (1 week) Power-performance tradeoffs in design (1 week) Low power design (3 weeks) Dynamic and leakage power reduction High-performance design (1 wk) Datapaths Clock and power distribution (1 week) Project presentations, final exam (1 week) 7 Class Organization 5 (+/-) assignments (20%) 4 quizzes (10%) 1 term-long design project (40%) Phase 1: Topic selection (Feb 20, week of ISSCC) Phase 2: Study (report by week 9, March 20) Phase 3: Design (report by final week) Presentations, May 6 Final exam (30%) (Wednesday, May 1, in-class) 8 4

5 Class Material Recommended text: J. Rabaey, Low Power Design Essentials, Springer Available at Baseline: Digital Integrated Circuits - A Design Perspective, 2 nd ed. by J. M. Rabaey, A. Chandrakasan, B. Nikolić Other reference books: Design of High-Performance Microprocessor Circuits, edited by A. Chandrakasan, W. Bowhill, F. Fox (available on-line at Wiley-IEEE) CMOS VLSI Design, 4 th ed, N.Weste, D. Harris 9 Class Material List of background material available on website Selected papers will be made available on website Linked from IEEE Xplore and other resources Need to be on campus to access, or use library proxy, library VPN (check Class-notes on website No printed handouts in class! 10 5

6 Reading Assignments Three types of readings: Assigned reading, that should be read before the class Recommended reading that covers the key points covered in lecture in greater detail Occasionally, background material will be listed as well 11 Reading Sources IEEE Journal of Solid-State Circuits (JSSC) IEEE International Solid-State Circuits Conference (ISSCC) Symposium on VLSI Circuits (VLSI) Other conferences and journals 12 6

7 Project Topics Focus this semester: Resiliency for Energy Efficiency Design components that e.g. operate in a wide range of supply voltages and are resilient to variations and different sources of disturbances: Logic, SRAM, DSP, up building blocks Supply, clock distribution Measurement circuits Project teams: 2+ members, proportional to the size of the project More details in Week 2 13 Tools 32nm predictive model HSPICE You need an instructional (or research) account Cadence, Synopsys, available on instructional servers Other predictive sub-100nm models (former BPTM) More information on the web site. 14 7

8 Webcast Webcasts from this class will available links on the web page Please do not hesitate to ask questions and ask them loud and clear! 15 EE241 - Spring 2013 Advanced Digital Integrated Circuits Lecture 1: Introduction Trends and Challenges in Digital Integrated Circuit Design 8

9 Reading (Lectures 1 & 2) Assigned Rabaey, LPDE, Ch 1 (Introduction) G.E. Moore, No exponential is forever: but "Forever" can be delayed! Proc. ISSCC 03, Feb T.-C. Chen, Where CMOS is going: trendy hype vs. real technology. Proc. ISSCC 06, Feb Recommended International Technology Roadmap ( Chandrakasan, Bowhill, Fox, Chapter 1 Impact of physical technology on architecture (J.H. Edmondson), Chandrakasan, Bowhill, Fox, Chapter 2 CMOS scaling and issues in sub-0.25 m systems (Y. Taur) S. Chou, Innovation and Integration in the Nanoelectronics Era, Proc. ISSCC 05, Feb S. Borkar, Design challenges of technology scaling, IEEE Micro, vol.19, no.4, p.23-29, July-Aug Background: Rabaey et al, DIC Chapter 3. The contributions to this lecture by a number of people (J. Rabaey, S. Borkar, etc) are greatly appreciated. 17 Semiconductor Industry Revenues M. Chang, Foundry Future: Challenges in the 21 st Century, ISSCC

10 Moore s Law In 1965, Gordon Moore noted that the number of transistors on a chip doubled every 12 months. He made a prediction that semiconductor technology will double its effectiveness every 12 months The complexity for minimum component costs has increased at a rate of roughly a factor of two per year. Certainly over the short term, this rate can be expected to continue, if not to increase. Over the longer term, the rate of increase is a bit more uncertain, although there is no reason to believe it will not remain nearly constant for at least 10 years. That means by 1975, the number of components per integrated circuit for minimum cost will be 65,000. Gordon Moore, Cramming more Components onto Integrated Circuits, (1965). 19 Transistors Per Die Moore s Law Reduced cost is one of the big attractions of integrated electronics, and the cost advantage continues to increase as the technology evolves toward the production of larger and larger circuit functions on a single semiconductor substrate. Electronics, Volume 38, Number 8, April 19, Graph from S.Chou, ISSCC Data (Moore) Source: Intel 20 10

11 Transistors Per Die Moore s Law K 4K 64K 16K 256K 1M M 1G 2G 512M 256M 128M Itanium 2 Processor 64M 16M Pentium Processor 486 Processor 386 Processor Itanium Processor Pentium 4 Processor Pentium III Processor Pentium II Processor 1965 Data (Moore) Memory Microprocessor Graph from S.Chou, ISSCC 2005 Source: Intel 21 Moore s law and cost 22 11

12 Progress in Nano-Technology Millipede Spintronic device Spintronic Storage Molecular Electronics Silicon Nanowires Nanomechanics T.C. Chen, Where Si-CMOS is going: Trendy Hype vs. Real Technology, ISSCC 06 Carbon Nanotubes 23 Technology Strategy / Roadmap Plan A: Extending Si CMOS R D Plan B: Subsytem Integration R D Plan C: Post Si CMOS Options R R&D Plan Q: Quantum Computing R T.C. Chen, Where Si-CMOS is going: Trendy Hype vs. Real Technology, ISSCC 06 D 24 12

13 Technology Evolution International Technology Roadmap for Semiconductors data Year Dram ½ pitch [nm] MPU transistors/chip 550M 1100M 2200M 4400M 8800M Wiring levels High-perf. physical gate [nm] High-perf. V DD [V] Local clock [GHz] High-perf. power [W] Cost-perf. power [W] Low-power V DD [V] Low-power power [W] Roadmap Acceleration in the Past 26 13

14 Printed vs. Physical Gate 10 Nominal feature size m Gate Length 250nm 180nm 70nm 50nm 35nm ~30nm 130nm 90nm 65nm 0.7X every 2 years 45nm 32nm 22nm 1000 nm Physical gate length > nominal feature size after 22nm? Source: Intel, IEDM presentations 27 Current Production 32nm (and 28nm): Various flavors - Intel Lg = 30/34nm Lg = 46nm Lg > 140nm C.-H. Jan, IEDM 09, P. VanDerVoorn, VLSI Tech

15 Current Production 22nm TriGate (FinFET): Intel PMOS cross-section NMOS transistor Lmin ~25nm (in presentation and reverse engineering report) C. Auth, VLSI Tech 12, D. James, CICC Some Research Devices 10nm device (Intel), circa 2003 L = 10 nm g 30 15

16 Sub-5nm FinFET Gate Silicon Fin Source BOX Gate Drain Si fin - Body! X. Huang, et al, IEDM Lee, VLSI Technology, More Recent Devices Thin-Body SOI MOSFET SOI: Silicon-on-Insulator Cheng, IEDM

17 Major Roadblocks 1. Managing complexity How to design a 10 billion (100 billion) transistor chip? And what to use all these transistors for? 2. Cost of integrated circuits is increasing It takes >>$10M to design a chip Mask costs are many $M in 28nm technology 3. Power as a limiting factor End of frequency scaling Dealing with power, leakages 4. Robustness issues Variations, SRAM, memory, soft errors, signal integrity 5. The interconnect problem 33 Next Lecture Impact of technology scaling Characteristics of sub-100nm technologies 34 17